# Power MOSFET, N Channel, 650 V, 31.2 A, 0.11 ohm, TO-220, Through Hole ![Product image](https://novapart.co/image/farnell:2726071/) **URL**: https://novapart.co/products/IPP65R110CFDXKSA1/power-mosfet-n-channel-650-v-312-a-011-ohm-to-220 **SKU**: IPP65R110CFDXKSA1 **Manufacturer**: INFINEON **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €2.7900 **Stock**: 10+ ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09; Available until stocks are exhausted Alternative available ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (17-Jan-2023) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | CoolMOS CF2 | | Qualification | - | | Power Dissipation | 277.8W | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-220 | | Drain Source Voltage Vds | 650V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 31.2A | | Drain Source On State Resistance | 0.11ohm | | Gate Source Threshold Voltage Max | 4V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2726071/) ## MOSFET Metal Oxide Semiconductor Field Effect Transistor ## CoolMOS™ CFD2 650V 650V CoolMOS™ CFD2 Power Transistor IPx65R110CFD ## Data Sheet Rev. 2.6 Final 650V CoolMOS™ CFD2 Power Transistor ## IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD ## 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler ## Features - Ultra-fast body diode - Very high commutation ruggedness - Extremely low losses due to very low FOM Rdson*Qg and Eoss - Easy to use/drive - Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22) **==> picture [152 x 236] intentionally omitted <==** **----- Start of picture text -----**
TO-247 D²PAK TO-220
ams
TO-220 FP I²PAK
Dal a
drain
pin 2
gate
pin 1
source
pin 3
**----- End of picture text -----**
- Pb-free plating, Halogen free mold compound ## Applications 650V CoolMOS™ CFD2 is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server,Telecom and Solar. Table 1 Key Performance Parameters |**Parameter**|**Value**|**Unit**| |---|---|---| |V‡» @ TÎ ÑÈà|700|V| |RDS(on),max|0.11|Â| |Qg,typ|118|nC| |ID,pulse|99.6|A| |Eoss @ 400V|9.2|µJ| |Body diode di/dt|900|A/µs| |Qrr|0.8|µC| |trr|150|ns| |Irrm|8.3|A| |**Type / Ordering Code**|**Package**|**Marking**|**Related Links**| |---|---|---|---| |IPW65R110CFD|PG-TO 247|65F6110|see Appendix A| |IPB65R110CFD|PG-TO 263||| |IPP65R110CFD|PG-TO 220||| |IPA65R110CFD|PG-TO 220 FullPAK||| |IPI65R110CFD|PG-TO 262||| Final Data Sheet Rev. 2.6, 2011-09-26 2 650V CoolMOS™ CFD2 Power Transistor **==> picture [147 x 65] intentionally omitted <==** ## IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD ## Table of Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Final Data Sheet Rev. 2.6, 2011-09-26 3 650V CoolMOS™ CFD2 Power Transistor **==> picture [147 x 65] intentionally omitted <==** ## IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD ## 2 Maximum ratings at TÎ = 25°C, unless otherwise specified ## Table 2 Maximum ratings |Table 2 Maximum ratings||||||| |---|---|---|---|---|---|---| |Parameter|Symbol||Values||Unit|Note / Test Condition| |||Min.|Typ.|Max.||| |Continuous drain current1)|I ‡|||31.2|A|T† = 25°C| |||||19.7||T† = 100°C| |Pulsed drain current2)|I ‡‚ÔÛÐÙþ|||99.6|A|T† = 25°C| |Avalanche energy, single pulse|Eƒ»|||845|mJ|I‡ = 6.2A, V‡‡ = 50V| |Avalanche energy, repetitive|Eƒ¸|||1.30|mJ|I‡ = 6.2A, V‡‡ = 50V| |Avalanche current, repetitive|I ƒ¸|||6.2|A|| |MOSFET dv/dt ruggedness|dv/dt|||50|V/ns|V‡» = 0 ... 400V| |Gate source voltage|V•»|-20||20|V|static| |||-30||30||AC (f > 1 Hz)| |Power dissipation (non FullPAK)
TO-247, TO-220, I²PAK|PÚÓÚ|||277.8|W|T† = 25°C| |Power dissipation (FullPAK)
TO-220 FP|PÚÓÚ|||34.7|W|T† = 25°C| |Operating and storage temperature|T΂TÙÚÃ|-55||150|°C|| |Mounting torque (non FullPAK)
TO-247, TO-220, I²PAK||||60|Ncm|M3 and M3.5 screws| |Mounting torque (FullPAK)
TO-220 FP||||50|Ncm|M2.5 screws| |Continuous diode forward current|I »|||31.2|A|T† = 25°C| |Diode pulse current|I »‚ÔÛÐÙþ|||99.6|A|T† = 25°C| |Reverse diode dv/dt3)|dv/dt|||50|V/ns|V‡» = 0 ... 400V, I»‡ ù I‡,
TÎ = 25°C| |Maximum diode commutation speed|diË/dt|||900|A/µs|| > 1) Limited by TÎ ÑÈà. Maximum > 2) Pulse width tÔ limited by TÎ ÑÈà 3) VÔþÈÏ picture [147 x 65] intentionally omitted <==** IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD ## 3 Thermal characteristics Table 3 Thermal characteristics TO-247, TO-220, I²PAK |Parameter|Symbol||Values|Values|Unit|Note / Test Condition| |---|---|---|---|---|---|---| |||Min.|Typ.|Max.||| |Thermal resistance, junction - case|RÚÌœ†|||0.45|°C/W|| |Thermal resistance, junction - ambient|RÚÌœƒ|||62|°C/W|leaded| |Soldering temperature, wavesoldering only
allowed at leads|TÙÓÐÁ|||260|°C|1.6 mm (0.063 in.) from case for
10s| |Table 4 Thermal characteristics TO-220 FP||||||| |Parameter|Symbol||Values||Unit|Note / Test Condition| |||Min.|Typ.|Max.||| |Thermal resistance, junction - case|RÚÌœ†|||3.6|°C/W|| |Thermal resistance, junction - ambient|RÚÌœƒ|||80|°C/W|leaded| |Soldering temperature, wavesoldering only
allowed at leads|TÙÓÐÁ|||260|°C|1.6 mm (0.063 in.) from case for
10s| |Table 5 Thermal characteristics D²PAK||||||| |Parameter|Symbol||Values||Unit|Note / Test Condition| |||Min.|Typ.|Max.||| |Thermal resistance, junction - case|RÚÌœ†|||0.45|°C/W|| |Thermal resistance, junction - ambient1)|RÚÌœƒ|||62|°C/W|SMD version, device on PCB,
minimal footprint| ||||35|||SMD version, device on PCB,
6cm² cooling area| |Soldering temperature, wave- &
reflowsoldering allowed|TÙÓÐÁ|||260|°C|reflow MSL| 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Final Data Sheet Rev. 2.6, 2011-09-26 5 650V CoolMOS™ CFD2 Power Transistor **==> picture [147 x 65] intentionally omitted <==** ## IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD ## 4 Electrical characteristics at TÎ = 25°C, unless otherwise specified ## Table 6 Static characteristics |Table 6 Static characteristics||||||| |---|---|---|---|---|---|---| |Parameter|Symbol||Values||Unit|Note / Test Condition| |||Min.|Typ.|Max.||| |Drain-source breakdown voltage|Vñ…¸ò‡»»|650|||V|V•» = 0V, I‡ = 1mA| |Gate threshold voltage|V•»ñÚÌò|3.5|4|4.5|V|V‡» = V•», I‡ = 1.3mA| |Zero gate voltage drain current|I ‡»»|||1.5|µA|V‡» = 650V, V•» = 0V, TÎ = 25°C| ||||400|||V‡» = 650V, V•» = 0V,
TÎ = 150°C| |Gate-source leakage current|I •»»|||100|nA|V•» = 20V, V‡» = 0V| |Drain-source on-state resistance|R‡»ñÓÒò||0.099|0.11|Â|V•» = 10V, I‡ = 12.7A, TÎ = 25°C| ||||0.257|||V•» = 10V, I‡ = 12.7A,
TÎ = 150°C| |Gate resistance|R•||1.3||Â|f = 1MHz, open drain| |Table 7 Dynamic characteristics||||||| |Parameter|Symbol||Values||Unit|Note / Test Condition| |||Min.|Typ.|Max.||| |Input capacitance|CÍÙÙ||3240||pF|V•» = 0V, V‡» = 100V, f = 1MHz| |Output capacitance|CÓÙÙ||160||pF|| |Effective output capacitance, energy
related1)|CÓñþØò||118||pF|V•» = 0V, V‡» = 0 ... 400V| |Effective output capacitance, time related2)|CÓñÚØò||582||pF|I‡ = constant, V•» = 0V,
V‡» = 0 ... 400V| |Turn-on delay time|tÁñÓÒò||16||ns|V‡‡ = 400V, V•» = 13V,
I‡ = 19.1A, R• = 1.8Â| |Rise time|tØ||11||ns|| |Turn-off delay time|tÁñÓËËò||68||ns|| |Fall time|tË||6||ns|| ## Table 8 Gate charge characteristics |Parameter|Symbol||Values|Values|Unit|Note / Test Condition| |---|---|---|---|---|---|---| |||Min.|Typ.|Max.||| |Gate to source charge|QÃÙ||21||nC|V‡‡ = 480V, I‡ = 19.1A,
V•» = 0 to 10V| |Gate to drain charge|QÃÁ||64||nC|| |Gate charge total|QÃ||118||nC|| |Gate plateau voltage|VÔÐÈÚþÈÛ||6.4||V|| > 1) CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 400V > 2) CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 400V Final Data Sheet Rev. 2.6, 2011-09-26 6 650V CoolMOS™ CFD2 Power Transistor **==> picture [147 x 65] intentionally omitted <==** ## IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD ## Table 9 Reverse diode characteristics |Parameter|Symbol||Values|Values|Unit|Note / Test Condition| |---|---|---|---|---|---|---| |||Min.|Typ.|Max.||| |Diode forward voltage|V»‡||0.9||V|V•» = 0V, IŒ = 19.1A, TÎ = 25°C| |Reverse recovery time|tØØ||150||ns|V¸ = 400V, IŒ = 19.1A,
diŒ/dt = 100A/µs| |Reverse recovery charge|QØØ||0.8||µC|| |Peak reverse recovery current|I ØØÑ||8.3||A|| Final Data Sheet Rev. 2.6, 2011-09-26 7 650V CoolMOS™ CFD2 Power Transistor **==> picture [147 x 65] intentionally omitted <==** ## IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD ## 5 Electrical characteristics diagrams ## Table 10 **==> picture [512 x 289] intentionally omitted <==** **----- Start of picture text -----**
Power dissipation (Non FullPAK) Power dissipation (FullPAK)
300 90
80
250
70
200 60
50
150
40
100 30
20
50
10
0 0
0 40 80 120 160 0 40 80 120 160
TC [°C] TC [°C]
Ptot=f(TC) Ptot=f(TC)
[W] [W]
tot tot
P P
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## Table 11 **==> picture [512 x 289] intentionally omitted <==** **----- Start of picture text -----**
Max. transient thermal impedance (Non FullPAK) Max. transient thermal impedance (FullPAK)
10 [1] 10 [1]
0.5 0.5
0.2 0.2
0.1 0.1
0.05 0.05
10 [0] 0.02 10 [0] 0.02
0.01 0.01
single pulse single pulse
10 [-1] 10 [-1]
10 [-2] 10 [-2]
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]
tp [s] tp [s]
ZthJC =f(tP); parameter: D=tp/T ZthJC =f(tP); parameter: D=tp/T
[K/W] [K/W]
thJC thJC
Z Z
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Final Data Sheet Rev. 2.6, 2011-09-26 8 650V CoolMOS™ CFD2 Power Transistor **==> picture [147 x 65] intentionally omitted <==** ## IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD ## Table 12 **==> picture [512 x 289] intentionally omitted <==** **----- Start of picture text -----**
Safe operating area T†=25°C (Non FullPAK) Safe operating area T†=25°C (FullPAK)
10 [3] 10 [3]
1 µs 1 µs
10 [2] 10 [2]
10 µs 10 µs
100 µs 100 µs
10 [1] 10 [1]
1 ms 1 ms
10 ms 10 ms
10 [0] 10 [0]
DC
10 [-1] 10 [-1]
DC
10 [-2] 10 [-2]
10 [0] 10 [1] 10 [2] 10 [3] 10 [0] 10 [1] 10 [2] 10 [3]
VDS [V] VDS [V]
ID=f(VDS); TC=25 °C; D=0; parameter: t ; p Vgs>7.5V ; ID=f(VDS); TC=25 °C; D=0; parameter: tp Vgs>7.5V
[A] [A]
ID ID
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## Table 13 **==> picture [512 x 289] intentionally omitted <==** **----- Start of picture text -----**
Safe operating area T†=80°C (Non FullPAK) Safe operating area T†=80°C (FullPAK)
10 [2] 10 [2]
1 µs 1 µs
10 µs 10 µs
10 [1] 10 [1]
100 µs 100 µs
1 ms 1 ms
10 [0] 10 [0]
10 ms 10 ms
DC
10 [-1] 10 [-1]
DC
10 [-2] 10 [-2]
10 [0] 10 [1] 10 [2] 10 [3] 10 [0] 10 [1] 10 [2] 10 [3]
VDS [V] VDS [V]
ID=f(VDS); TC=80 °C; D=0; parameter: tp ; Vgs>7.5V ID=f(VDS); TC=80 °C; D=0; parameter: tp ; Vgs>7.5V
[A] [A]
ID ID
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Final Data Sheet Rev. 2.6, 2011-09-26 9 650V CoolMOS™ CFD2 Power Transistor **==> picture [147 x 65] intentionally omitted <==** ## IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD ## Table 14 **==> picture [512 x 289] intentionally omitted <==** **----- Start of picture text -----**
Typ. output characteristics T†=25°C Typ. output characteristics T†=125°C
120 80
20 V 20 V
10 V 70 10 V
100
8 V 8 V
7 V 60 7 V
80 6 V 6 V
50
5.5 V 5.5 V
60 5 V 40 5 V
4.5 V 4.5 V
30
40
20
20
10
0 0
0 5 10 15 20 0 5 10 15 20
VDS [V] VDS [V]
ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS
[A] [A]
ID ID
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## Table 15 **==> picture [512 x 289] intentionally omitted <==** **----- Start of picture text -----**
Typ. drain-source on-state resistance Drain-source on-state resistance
1.00 0.35
0.90
0.30
0.80
0.25
0.70
0.60
0.20
0.50
0.15
0.40 98% typ
0.30
5 V 5.5 V 6 V 6.5 V 7 V 0.10
0.20
10 V
0.05
0.10
0.00 0.00
0 10 20 30 40 -60 -20 20 60 100 140 180
ID [A] Tj [°C]
RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=18.1 A; VGS=10 V
[Â] [Â]
DS(on) DS(on)
R R
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Final Data Sheet Rev. 2.6, 2011-09-26 10 650V CoolMOS™ CFD2 Power Transistor **==> picture [147 x 65] intentionally omitted <==** ## IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD ## Table 16 **==> picture [512 x 289] intentionally omitted <==** **----- Start of picture text -----**
Typ. transfer characteristics Typ. gate charge
120 10
25 ° C 9 120 V 480 V
100
8
7
80
6
150 °C
60 5
4
40
3
2
20
1
0 0
0 2 4 6 8 10 0 50 100 150
VGS [V] Qgate [nC]
ID=f(VGS); |VDS|=20V; VGS=f(Qgate); ID=19.2 A pulsed; parameter: VDD
[V]
[A]
ID VGS
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## Table 17 **==> picture [512 x 289] intentionally omitted <==** **----- Start of picture text -----**
Avalanche energy Drain-source breakdown voltage
900 760
740
800
720
700
700
600
680
500 660
400 640
620
300
600
200
580
100
560
0 540
0 50 100 150 200 -60 -20 20 60 100 140 180
Tj [°C] Tj [°C]
EAS=f(Tj); ID=6.2 A; VDD=50 V VBR(DSS)=f(Tj); ID=10 mA
[mJ] [V]
AS
E BR(DSS)
V
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Final Data Sheet Rev. 2.6, 2011-09-26 11 650V CoolMOS™ CFD2 Power Transistor **==> picture [147 x 65] intentionally omitted <==** ## IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD ## Table 18 **==> picture [512 x 289] intentionally omitted <==** **----- Start of picture text -----**
Typ. capacitances Typ. CÓÙÙ stored energy
10 [4] 18
Ciss 16
14
10 [3]
12
10
10 [2]
Coss
8
Crss
6
10 [1]
4
2
10 [0] 0
0 100 200 300 400 500 600 0 100 200 300 400 500 600
VDS [V] VDS [V]
C=f(VDS); VGS=0 V; f=1 MHz Eoss=f(VDS)
[µJ]
C [pF] oss
E
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## Table 19 **==> picture [257 x 289] intentionally omitted <==** **----- Start of picture text -----**
Forward characteristics of reverse diode
10 [2]
125 °C
25 °C
10 [1]
10 [0]
10 [-1]
0.0 0.5 1.0 1.5
VSD [V]
IF=f(VSD); parameter: Tj
[A]
IF
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Final Data Sheet Rev. 2.6, 2011-09-26 12 650V CoolMOS™ CFD2 Power Transistor ## IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD ## 6 Test Circuits ## Table 20 Diode_characteristics **==> picture [382 x 153] intentionally omitted <==** **----- Start of picture text -----**
Test circuit for diode characteristics Diode recovery waveform
ID ‘ di-/dt
ty =tg+fy
RG1 0,=Qs+ Of
ty
VDS
EESeS
GY
RG2
RRM “=
Qe aca
RG1 = RG2 Vv
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## Table 21 Switching_times **==> picture [471 x 126] intentionally omitted <==** **----- Start of picture text -----**
Switching times test circuit for inductive load Switching times waveform
VDS
90%
VDS
VGS 10%
VGS
— td(on) tr _ td(off) tf
+> + >
+ ton >+ toff
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## Table 22 Unclamped_inductive **==> picture [422 x 118] intentionally omitted <==** **----- Start of picture text -----**
Unclamped inductive load test circuit Unclamped inductive waveform
V
(BR)DS
VD
ID VDS
VDS VDS
ID >
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Final Data Sheet Rev. 2.6, 2011-09-26 13 650V CoolMOS™ CFD2 Power Transistor IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD ## 7 Package Outlines Figure 1 Outline PG-TO 247, dimensions in mm/inches Final Data Sheet Rev. 2.6, 2011-09-26 14 650V CoolMOS™ CFD2 Power Transistor ## IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD Figure 2 Outline PG-TO 263, dimensions in mm/inches Final Data Sheet Rev. 2.6, 2011-09-26 15 650V CoolMOS™ CFD2 Power Transistor ## IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD Figure 3 Outline PG-TO 220, dimensions in mm/inches Final Data Sheet Rev. 2.6, 2011-09-26 16 650V CoolMOS™ CFD2 Power Transistor IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD Figure 4 Outline PG-TO 220 FullPAK, dimensions in mm/inches Final Data Sheet Rev. 2.6, 2011-09-26 17 650V CoolMOS™ CFD2 Power Transistor ## IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD Figure 5 Outline PG-TO 262, dimensions in mm/inches Final Data Sheet Rev. 2.6, 2011-09-26 18 650V CoolMOS™ CFD2 Power Transistor **==> picture [147 x 65] intentionally omitted <==** IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD ## 8 Appendix A ## Table 23 Related Links - [IFX Design Tools:] - http://www.infineon.com/cms/en/product/promopages/designtools/index.html - [IFX CoolMOS Webpage:] http://www.infineon.com/cms/en/product/channel.html?channel=ff80808112ab681d0112ab6a628704d8 Final Data Sheet Rev. 2.6, 2011-09-26 19 650V CoolMOS™ CFD2 Power Transistor **==> picture [147 x 65] intentionally omitted <==** ## IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD ## Revision History IPW65R110CFD, IPB65R110CFD, IPP65R110CFD, IPA65R110CFD, IPI65R110CFD ## **Revision: 2011-09-26, Rev. 2.6** |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.1|2011-06-07|Release the final datasheet| |2.2|2011-06-22|-| |2.3|2011-08-30|update to CFD2 standard| |2.4|2011-09-14|update pin naming| |2.5|2011-09-16|release of new pin naming| |2.6|2011-09-26|update the Igss test condition| ## We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2011-08-01 Published by Infineon Technologies AG 81726 München, Germany © 2011 Infineon Technologies AG All Rights Reserved. ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 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