# Power MOSFET, N Channel, 600 V, 7.3 A, 0.54 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2781182/)

**URL**: https://novapart.co/products/IPP60R600P6XKSA1/power-mosfet-n-channel-600-v-73-a-054-ohm-to-220
**SKU**: IPP60R600P6XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9570
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS P6 |
| Power Dissipation | 63W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 63W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.54ohm |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7.3A |
| Drain Source On State Resistance | 0.54ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781182/)

## MOSFET 

IPx60R600P6 

Final 

IPD60R600P6 

## **Features** 

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D²PAK TO-220<br>tab y tab<br>ky 2 &<br>1 a: 3 19, "24<br>DPAK<br>. tab<br>1 2<br>3<br>Drain<br>Pin 2, Tab ,<br>van<br>Gate (<br>Pin 1<br>caat<br>Source<br>Pin 3<br>**----- End of picture text -----**<br>


## **Applications** 

|**Parameter**<br>~~Table~~<br>~~1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|VDS @Tj,max|650|V|
|RDS(on),max|600|mΩ|
|Qg.typ|12|nC|
|ID,pulse|18|A|
|Eoss@400V|1.8|µJ|
|Bodydiode di/dt|500|A/µs|



|~~Type/OrderingCode~~~~**|**~~|**Package**<br>~~**|**~~|**Marking**|Related Links|
|---|---|---|---|
|IPB60R600P6<br>~~Type/OrderingCode ~~~~**|**~~|PG-TO 263<br>~~**|**~~|6R600P6|see Appendix A|
|IPP60R600P6|PG-TO 220|||
|IPA60R600P6|PG-TO 220 FullPAK|||
|IPD60R600P6|PG-TO 252|||



Final Data Sheet 

2 

600V�CoolMOS™�P6�Power�Transistor IPB60R600P6,�IPP60R600P6,�IPA60R600P6, IPD60R600P6 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 

Final Data Sheet 

3 

Rev.�2.2,��2015-07-10 

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## 600V�CoolMOS™�P6�Power�Transistor IPB60R600P6,�IPP60R600P6,�IPA60R600P6, IPD60R600P6 

**2�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|7.3<br>4.6|A|TC=25°C<br>TC=100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|18|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|133|mJ|ID=1.3A; VDD=50V; see table 12|
|Avalanche energy, repetitive|_E_AR|-|-|0.20|mJ|ID=1.3A; VDD=50V; see table 12|
|Avalanche current, repetitive|_I_AR|-|-|1.3|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|100|V/ns|_V_DS=0...400V|
|Gate source voltage(static)|_V_GS|-20|-|20|V|static;|
|Gate source voltage(dynamic)|_V_GS|-30|-|30|V|AC(f>1 Hz)|
|Power dissipation (Non FullPAK)<br>TO-220, TO-252, TO-263|_P_tot|-|-|63|W|_T_C=25°C|
|Power dissipation (FullPAK)<br>TO-220FP|_P_tot|-|-|28|W|_T_C=25°C|
|Storage temperature|_T_stg|-55|-|150|°C|-|
|Operating junction temperature|_T_j|-55|-|150|°C|-|
|Mounting torque (Non FullPAK)<br>TO-220|-|-|-|60|Ncm|M3 and M3.5 screws|
|Mounting torque (FullPAK)<br>TO-220FP|-|-|-|50|Ncm|M2.5 screws|
|Continuous diode forward current|_I_S|-|-|6.3|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|18|A|TC=25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|15|V/ns|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C<br>see table 10|
|Maximum diode commutation speed|dif/dt|-|-|500|A/µs|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C<br>see table 10|
|Insulation withstand voltage for<br>TO-220FP|_V_ISO|-|-|2500|V|_V_rms,_T_C=25°C,_t_=1min|



> 1) Limited by Tj max. Maximum duty cycle D=0.75 

> 2) Pulse width tp limited by Tj,max 

> 3)�Identical�low�side�and�high�side�switch�with�identical� _R_ G 

Final Data Sheet 

Rev.�2.2,��2015-07-10 

4 

600V�CoolMOS™�P6�Power�Transistor IPB60R600P6,�IPP60R600P6,�IPA60R600P6, IPD60R600P6 

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## **3�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics�(Non�FullPAK)�TO-220** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|2|°C/W|-|
|Thermal resistance,junction - ambient|_R_thJA|-|-|62|°C/W|leaded|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6mm (0.063 in.) from case for 10s|



## **Table�4�����Thermal�characteristics�(FullPAK)�TO-220FP** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|4.5|°C/W|-|
|Thermal resistance,junction - ambient|_R_thJA|-|-|80|°C/W|leaded|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6mm (0.063 in.) from case for 10s|



## **Table�5�����Thermal�characteristics�TO-252,�TO-263** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|2|°C/W|-|
|Thermal resistance,junction - ambient|_R_thJA|-|-|62|°C/W|device on PCB, minimal footprint|
|Thermal resistance, junction - ambient<br>for SMD version|_R_thJA|-|35|45|°C/W|Device on 40mm*40mm*1.5mm<br>epoxy PCB FR4 with 6cm² (one<br>layer, 70µm thickness) copper area<br>for drain connection and cooling.<br>PCB is vertical without air stream<br>cooling.|
|Soldering temperature, wave & reflow<br>soldering allowed|_T_sold|-|-|260|°C|reflow MSL1|



Final Data Sheet 

Rev.�2.2,��2015-07-10 

5 

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## 600V�CoolMOS™�P6�Power�Transistor IPB60R600P6,�IPP60R600P6,�IPA60R600P6, IPD60R600P6 

## **4�����Electrical�characteristics** 

at� _T_ j=25°C,�unless�otherwise�specified 

## **Table�6�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|600|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|3.5|4.0|4.5|V|_V_DS=_V_GS,_I_D=0.2mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|1<br>-|µA|_V_DS=600,_V_GS=0V,_T_j=25°C<br>_V_DS=600,_V_GS=0V,_T_j=150°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.540<br>1.404|0.600<br>-|Ω|_V_GS=10V,_I_D=2.4A,_T_j=25°C<br>_V_GS=10V,_I_D=2.4A,_T_j=150°C|
|Gate resistance|_R_G|-|11|-|Ω|_f_=1MHz,opendrain|



## **Table�7�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|557|-|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Output capacitance|_C_oss|-|28|-|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Effective output capacitance,<br>energy related1)|_C_o(er)|-|23|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance,<br>time related2)|_C_o(tr)|-|88|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|11|-|ns|_V_DD=400V,_V_GS=13V,_I_D=3A,<br>_R_G=6.8Ω;seetable11|
|Rise time|_t_r|-|7|-|ns|_V_DD=400V,_V_GS=13V,_I_D=3A,<br>_R_G=6.8Ω;seetable11|
|Turn-off delay time|_t_d(off)|-|33|-|ns|_V_DD=400V,_V_GS=13V,_I_D=3A,<br>_R_G=6.8Ω;seetable11|
|Fall time|_t_f|-|14|-|ns|_V_DD=400V,_V_GS=13V,_I_D=3A,<br>_R_G=6.8Ω;seetable11|



## **Table�8�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|3|-|nC|_V_DD=400V,_I_D=3A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|5|-|nC|_V_DD=400V,_I_D=3A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|12|-|nC|_V_DD=400V,_I_D=3A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|6.1|-|V|_V_DD=400V,_I_D=3A,_V_GS=0to10V|



> 1) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 2) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

6 

Rev.�2.2,��2015-07-10 

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## 600V�CoolMOS™�P6�Power�Transistor IPB60R600P6,�IPP60R600P6,�IPA60R600P6, IPD60R600P6 

## **Table�9�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0V,_I_F=3A,_T_j=25°C|
|Reverse recovery time|_t_rr|-|196|-|ns|_V_R=400V,_I_F=3A,d_i_F/d_t_=100A/µs;<br>see table 10|
|Reverse recovery charge|_Q_rr|-|1.7|-|µC|_V_R=400V,_I_F=3A,d_i_F/d_t_=100A/µs;<br>see table 10|
|Peak reverse recovery current|_I_rrm|-|17|-|A|_V_R=400V,_I_F=3A,d_i_F/d_t_=100A/µs;<br>see table 10|



Final Data Sheet 

Rev.�2.2,��2015-07-10 

7 

IPD60R600P6 

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**----- Start of picture text -----**<br>
70 SS 30 LL | | | J. | 4<br>_— ,  ———— ————— a GG<br>SS eS ———— Sn<br>60 h o — G G<br>ee 25 Po NN<br>SS Oe C N<br>oo — a<br>—— a CG<br>50 a a by<br>—————=—>[—"SS==S== 20 a  OO<br>OE<br>a COCO<br>S 40 ———— N*E<br>= ee S 15 a<br>=== "===="====== = aPN DS |<br>30 ————_——_—_——a eGa a GG, SG<br>————— a GC<br>oo 10 a<br>oe Ne a GP<br>20 ee ——————————————— po<br>—_——— A<br>SS PN<br>5<br>10 =—SSS=S=S===S=SS==S=—SS=S=S==SS=oo —F—— GnQO I<br>———— CL COr| TC Cr CT C C™~COCCYTCSC™C~COCYTS C $W.TCTCOCMrYTCOCOTS$TTCTCOCdrTCOTCCCC TQ|)<br>wr po NT<br>0 | ON 0 eGGe<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>T C [°C] T C [°C]<br>G P tot=f( T C) e P tot=f( T C)<br>Diagram 3: Max. transient thermal impedance (Non FullPAK) | Diagram 4: Max. transient thermal impedance (Non FullPAK)<br>10 [1] 10 [1]<br>Le er CCC CI Ce Co<br>LrLTT| TTT oT TTT TTT TTT LTPITle TTH<br>0.5<br>SUS ce eee ance ere<br>0.5 SAUIOSS= >, e T i 0.2  a<br>zat ee || Ll<br>10 [0] 10 [0]<br>Pt 0.2 ge PS 0.1 th<br>=e LCSAC<br>= 0.1 OO | Lest 0.05 ARTE HE<br>< PSA TIT = ATT<br>pf eA I < - ait<br>0.05 0.02<br>0.02<br>10 [-1] AMMél LLIN TUiieMAlATLLINMallALI 10 [-1] HH26070 AMMALAE EMELINEHH<br>0.01 0.01<br>single pulse single pulse<br>Rea a isesietieenin!a neaCOO aCoCna<br>10 [-2] 10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>t p [s] t p [s]<br>Z thJC =f(_ t P ); parameter: D=t p/ T Z thJC =f(_); t P parameter: D=t p/ T<br>tot tot<br>P P<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

IPD60R600P6 

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**----- Start of picture text -----**<br>
10 [2] 10 [2]<br>a OO Qe GO<br>1 µs<br>1 µs<br>10 [1] 10 µs<br>10 [1] S SS 10 µs |  es<br>100 µs<br>100 µs<br>1 ms<br>10 [0]<br>aS 1 ms ENN KN 10 ms<br>10 [0] __E——aeESNT Sal!oo | SESa RS SO<br>_ Saer 10 ms NE a<br>SeTTT ENE PL 10 [-1] NTNUTT<br>DC<br>Oy TION) SS SSE EN DC NSE<br>10 [-1]<br>tI INL SSS Seas<br>10 [-2]<br>a A ee ee eeSo ir [om]<br>NH ese<br>a<br>Nl eee eee ait<br>10 [-2]<br>10 [-3]<br>10 [-3] ee 10 [-4] rT TTTTT)<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [0] 10 [1] 10 [2] 10 [3]<br>V DS [V] V DS wal<br>I D=f( V DS T C D t p I D=f( V DS T C D t p<br>10 [2] 10 [2]<br>a OO<br>a OG GO 10 [1] ee | 1 µs<br>10 [1] A|) UNCR 1 µs —_--R RSBea 10 µs<br>SS SS SS SSNS 10 µs SEB Se NSS 100 µs<br>RON RSE 100 µs NERS 1 ms<br>10 [0]<br>1 ms 10 ms<br>10 [0] xe NR NL SSS SS<br>bh Lo eee NN NT A<br>10 ms<br>_ SR<br>Qa NNNS | 10 [-1] ANNN<br>DC DC<br>HAART === ee<br>10 [-1] NN | NONE<br>10 [-2]<br>SSS Et TEINNO<br>NS eS [EH<br>NS SSS SS SSS SS SS ee ee<br>10 [-2]<br>10 [-3]<br>ee ee<br>10 [-3] 10 [-4]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [0] 10 [1] 10 [2] 10 [3]<br>V DS [V] V DS wal<br>I D=f( V DS T C D t p I D=f( V DS T C D t p<br>I D I D<br>I D I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

IPD60R600P6 

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**----- Start of picture text -----**<br>
20 12<br>20 V 20 V<br>Poo 10 V | 10 V<br>SEEEEEEEEEEEEL,. pee PL EL EL ELLE ET 8 V ag<br>15 PETPt ttt tT |ET| TT |TT| Leer| ere 9 TTT AAT KELgoo<br>BERR See 8 V Vga<br>PERE er BERRRREREEEDY 7 V 240008<br>SGSGeen) 7/2 PLE] EL EL) LAR<br>10 FECA E 7 V EC 6 PTEAA<br>g f f<br>FC Uy, VA, eee ES SS S S  ES Y 6 V<br>PPP ee EE E A<br>BER? YA CORED ces ses<br>5 BED  ZG 3 TAL TTT Td<br>5.5 V<br>HA GRRE eeeeee Ve<br>6 V<br>EP tt tt || | fei<br>5.5 V 5 V<br>2) A 4SUReee WEfo<br>[AL T —-_ -_ _ _ _ ____ _ —_-<br>4.5 V 5 V 4.5 V<br>0 J AS SSS 0 ALT<br>0 5 10 15 20 0 5 10 15 20<br>V DS [V] V DS [V]<br>I D=f( V DS T j V GS I D=f( V DS T j V GS<br>5.0 1.50<br>ee ee ee ee —>=>=>=>=========<br>4.5 a ee ee |aee oc 1.40 —_—_—_ ee _ —_$_ ——__ __=_=_==—=,<br>ae 1.30<br>ee e e e |Ve eSo oe S e  Go SSee<br>4.0 ee— oe || 1.201.10 ————— eeoe ae<br>a a<br>3.5<br>a a 1.00 —————<br>3.0 5.5 V 6 V 6.5 V 7 V 0.90<br>0.80 98% typ<br>2.5<br>ee ee ee 10 V 0.70 ———<br>a es eree ee ee [Ae] EoDee<br>0.60<br>2.0<br>20 V<br>ee ee ee 0.50 SSS SSS<br>1.5 0.40<br>See A SS<br>0.30<br>——— SS[|<br>1.0<br>aa 0.20 —————<br>0.5 PEE EEESS EEECO EEECC OC EHS}CO | 0.10 a—_—$—| $ $ $ $$ > SS =====<br>0 5 10 15 -50 -25 0 25 50 75 100 125 150<br>I D [A] T j [°C]<br>R DS(on)=f( I D T j V GS R DS(on)=f( T j I D V GS<br>I D I D<br>] Ω ] Ω<br> [<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


Final Data Sheet 

10 

IPD60R600P6 

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10 [2] as 140 eS<br>COSEER SEER EEE EEEAO GG ES \—<br>ptt tpt Pt Pe 120 a<br>a<br>100<br>10 [1] =SSSSSSS-2.5======——— —\<br>ee a a<br>80<br>125 °C 25 °C<br>_ SEE AGE SS Sp Nn<br>eo ee ee<br>PET TTT TET TT TT TT TT 60 eS<br>10 [0] ft tt] tT | TE ET TT TT a<br>40<br>——————————————— a<br>ptt TA ee a a<br>20<br>PEEP | See SS<br>10 [-1] 0<br>0.0 0.5 1.0 1.5 2.0 25 50 75 100 125 150<br>V SD [V] T j [°C]<br>I F=f( V SD T j E AS=f( T j I D V DD<br>I F AS<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

11 

IPD60R600P6 

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700 10 [4]<br>680660 SS PCREEEEERE<br>10 [3]<br>Ciss<br>640 i ——<br>~= 620 Goo~-Pprrryreree! le 10 [2] eeeLVIye<br>600<br>Coss<br>580<br>10 [1]<br>560<br>PTA RURERERRRRSREEEneS=<br>| ry | | | | | | ft =——————<br>540 Crss<br>SESS SS SSE “ACEEe<br>520 a 10 [0] PL PTT EEL EL EEE EEE<br>-75 -50 -25 0 25 50 75 100 125 150 175 0 100 200 300 400 500<br>T j [°C] V DS [V]<br>V BR(DSS)=f( T j I D C =f( V DS y__=0.V; V GS f =1 MHz<br>C<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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3.0 RS ss GO<br>ss ss<br>ssss<br>2.5 ssRS ss<br>a  Rs es es GO GO<br>a es se es<br>aa ssses es e ees eeesee<br>ss<br>2.0<br>RS es es es a<br>a es se Gd<br>5 a eesse es es 4<br>— 1.5 aRSRS ssssesesedGDes A<br>aaa essceeeQA e<br>a eeee<br>1.0<br>aaa eeeeeee e see<br>a a a ee ee ee ee<br>a eeee<br>0.5<br>Po a ce ee es<br>a, a ee es ss<br>[7] | ff<br>Apt h<br>0.0<br>0 100 200 300 400 500<br>V DS [V]<br>FT E oss = f (V DS )<br>oss<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

12 

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## 600V�CoolMOS™�P6�Power�Transistor IPB60R600P6,�IPP60R600P6,�IPA60R600P6, IPD60R600P6 

## **6�����Test�Circuits** 

## **Table�10�����Diode�characteristics** 

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Test circuit for diode characteristics Diode recovery waveform<br>V ,I<br>R g 1 VDS(peak) VDS<br>VDS<br>V DS IF tF trr tS<br>R g  2 dIF / dt<br>I F t<br>QF QS 10 %Irrm<br>R g 1 = RI F g  2 Irrm dIrr / dt tQrrrr =t= QF +tF S+QS<br>**----- End of picture text -----**<br>


## **Table�11�����Switching�times** 

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Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>V DS<br>V GS 10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>**----- End of picture text -----**<br>


## **Table�12�����Unclamped�inductive�load** 

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Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

13 

Rev.�2.2,��2015-07-10 

IPD60R600P6 

Final Data Sheet 

14 

IPD60R600P6 

Final Data Sheet 

15 

600V�CoolMOS™�P6�Power�Transistor IPB60R600P6,�IPP60R600P6,�IPA60R600P6, IPD60R600P6 

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MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX DOCUMENT NO.<br>A 4.50 4.90 0.177 0.193 Z8B00003319<br>A1 2.34 2.85 0.092 0.112<br>A2 2.42 2.86 0.095 0.113 SCALE 0<br>b 0.65 0.90 0.026 0.035<br>b1 0.95 1.38 0.037 0.054 2.5<br>b2 0.95 1.51 0.037 0.059<br>b3 0.65 1.38 0.026 0.054 0 2.5<br>b4 0.65 1.51 0.026 0.059 5mm<br>c 0.40 0.63 0.016 0.025<br>D 15.67 16.15 0.617 0.636<br>EUROPEAN PROJECTION<br>D1 8.97 9.83 0.353 0.387<br>E 10.00 10.65 0.394 0.419<br>e 2.54 (BSC) 0.100 (BSC)<br>e1 5.08 0.200<br>N 3 3<br>H 28.70 29.75 1.130 1.171 ISSUE DATE<br>L 12.78 13.75 0.503 0.541 05-05-2014<br>L1 2.83 3.45 0.111 0.136<br>�� 2.95 3.38 0.116 0.133 REVISION<br>Q 3.15 3.50 0.124 0.138 04<br>**----- End of picture text -----**<br>


## **Figure�3�����Outline�PG-TO�220�FullPAK,�dimensions�in�mm/inches** 

Final Data Sheet 

16 

Rev.�2.2,��2015-07-10 

IPD60R600P6 

Final Data Sheet 

17 

IPD60R600P6 

- IFX CoolIMOS **TM** 

- • IFX CoolIMOS__ **TM** • **TM** 

- 

Final Data Sheet 

18 

IPD60R600P6 

IPB60R600P6, IPP60R600P6, IPA60R600P6, IPD60R600P6 

Previous Revision 

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||||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2013-12-05|Release of final version|
|2.1|2013-12-05|Release of multi-package datasheet|
|2.2|2015-07-10|PG-TO 263 package added|

**----- End of picture text -----**<br>


## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

19 



## Links

- [View this product on Novapart](https://novapart.co/products/IPP60R600P6XKSA1/power-mosfet-n-channel-600-v-73-a-054-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/ipp60r600p6xksa1/mosfet-n-ch-600v-7-3a-to-220/dp/2781182)
---

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