# Power MOSFET, N Channel, 600 V, 9 A, 0.305 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2784034/)

**URL**: https://novapart.co/products/IPP60R360P7XKSA1/power-mosfet-n-channel-600-v-9-a-0305-ohm-to-220
**SKU**: IPP60R360P7XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4630
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.305ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS P7 |
| Qualification | - |
| Power Dissipation | 41W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9A |
| Drain Source On State Resistance | 0.305ohm |
| Gate Source Threshold Voltage Max | 3.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2784034/)

**IPP60R360P7** 

## **MOSFET** 

cooler. switching applications even more efficient, more compact and much 

## **Features** 

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**----- Start of picture text -----**<br>
_— tab<br>Drain<br>Pin 2, Tab L<br>StS<br>Pin 1Gate a ET)<br>NI<br>SourcePin 3 :<br>**----- End of picture text -----**<br>


**Benefits** and JESD22) * Ease of use and fast design-in through low ringing tendency and across PFC and PWM stages losses * Simplified thermal management due to low switching and conduction * Increased power density solutions enabled by using products with smaller footprint and higher manufacturing quality due to >2 kV ESD protection 

## **Applications** 

|**Parameter**||**Value**|**Value**|**Unit**||||
|---|---|---|---|---|---|---|---|
|VDS @Tj,max||650||V||||
|RDS(on),max||360||mΩ||||
|Qg.typ||13||nC||||
|ID,pulse||26||A||||
|Eoss@400V||1.4||µJ||||
|Bodydiode di/dt||900||A/µs||||
|||||||||
|Type/OrderingCode|||**Package**<br>**Marking**<br> ~~|__|~~Reatted||||Reatted Links|
|IPP60R360P7|||PG-TO 220-3||60R360P7||see Appendix A|



Final Data Sheet 

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**600V�CoolMOSª�P7�Power�Transistor IPP60R360P7** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 

Final Data Sheet 

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Rev.�2.2,��2017-03-02 

**600V�CoolMOSª�P7�Power�Transistor IPP60R360P7** 

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## **1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

��www.infineon.com/tools 

|**Table2Maximumratings**<br>www.infineon.com/tools|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|9<br>6|A|TC=25°C<br>TC=100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|26|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|27|mJ|ID=2.5A; VDD=50V; see table 10|
|Avalanche energy, repetitive|_E_AR|-|-|0.14|mJ|ID=2.5A; VDD=50V; see table 10|
|Avalanche current, single pulse|_I_AS|-|-|2.5|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|80|V/ns|_V_DS=0...400V|
|Gate source voltage(static)|_V_GS|-20|-|20|V|static;|
|Gate source voltage(dynamic)|_V_GS|-30|-|30|V|AC(f>1 Hz)|
|Power dissipation|_P_tot|-|-|41|W|_T_C=25°C|
|Storage temperature|_T_stg|-55|-|150|°C|-|
|Operating junction temperature|_T_j|-55|-|150|°C|-|
|Mountingtorque|-|-|-|60|Ncm|M3 and M3.5 screws|
|Continuous diode forward current|_I_S|-|-|9|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|26|A|_T_C=25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|50|V/ns|_V_DS=0...400V,_I_SD<=9A,_T_j=25°C<br>see table 8|
|Maximum diode commutation speed|dif/dt|-|-|900|A/µs|_V_DS=0...400V,_I_SD<=9A,_T_j=25°C<br>see table 8|
|Insulation withstand voltage|_V_ISO|-|-|-|V|_V_rms,_T_C=25°C,_t_=1min|



> 1) Limited by Tj max. Maximum Duty Cycle D = 0.50 

> 2) Pulse width tp limited by Tj,max 

3) Identical low side and high side switch with identical Rg 

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**600V�CoolMOSª�P7�Power�Transistor IPP60R360P7** 

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## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction  - case|_R_thJC|-|-|3.04|°C/W|-|
|Thermal resistance,junction  - ambient|_R_thJA|-|-|62|°C/W|leaded|
|Thermal resistance, junction  - ambient<br>for SMD version|_R_thJA|-|-|-|°C/W|-|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6mm (0.063 in.) from case for 10s|



Final Data Sheet 

Rev.�2.2,��2017-03-02 

4 

**600V�CoolMOSª�P7�Power�Transistor IPP60R360P7** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|600|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|3|3.5|4|V|_V_DS=_V_GS,_I_D=0.14mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|1<br>-|µA|_V_DS=600,_V_GS=0V,_T_j=25°C<br>_V_DS=600,_V_GS=0V,_T_j=150°C|
|Gate-source leakage current|_I_GSS|-|-|1000|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.305<br>0.714|0.360<br>-|Ω|_V_GS=10V,_I_D=2.7A,_T_j=25°C<br>_V_GS=10V,_I_D=2.7A,_T_j=150°C|
|Gate resistance|_R_G|-|6.2|-|Ω|_f_=1MHz,opendrain|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|555|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Output capacitance|_C_oss|-|10|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Effective output capacitance, energy<br>related1)|_C_o(er)|-|18|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance, time<br>related2)|_C_o(tr)|-|164|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|8|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.7A,<br>_R_G=10Ω;seetable9|
|Rise time|_t_r|-|7|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.7A,<br>_R_G=10Ω;seetable9|
|Turn-off delay time|_t_d(off)|-|42|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.7A,<br>_R_G=10Ω;seetable9|
|Fall time|_t_f|-|10|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.7A,<br>_R_G=10Ω;seetable9|



## **Table�6�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|3|-|nC|_V_DD=400V,_I_D=2.7A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|4|-|nC|_V_DD=400V,_I_D=2.7A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|13|-|nC|_V_DD=400V,_I_D=2.7A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.2|-|V|_V_DD=400V,_I_D=2.7A,_V_GS=0to10V|



> 1) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 2) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

Rev.�2.2,��2017-03-02 

5 

**600V�CoolMOSª�P7�Power�Transistor IPP60R360P7** 

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## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0V,_I_F=2.7A,_T_j=25°C|
|Reverse recovery time|_t_rr|-|145|-|ns|_V_R=400V,_I_F=1A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Reverse recovery charge|_Q_rr|-|0.74|-|µC|_V_R=400V,_I_F=1A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Peak reverse recovery current|_I_rrm|-|11|-|A|_V_R=400V,_I_F=1A,d_i_F/d_t_=100A/µs;<br>see table 8|



Final Data Sheet 

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Rev.�2.2,��2017-03-02 

**IPP60R360P7** 

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**----- Start of picture text -----**<br>
50 10 [2]<br>Wt ATS SHH<br>10 [1]<br>40 R ET SS S 1 µs<br>10 ms 10 µs<br>I w Sa<br>10 [0] 1 ms<br>30 TT KX TF Tf TIN WINNIE<br>_ Ne _ eeSL 100 µs<br>= 2 10 [-1] Li| INI<br>20<br>10 [-2] SEE<br>NO)IN PotSS  TTPEEST T IN NIA SeSS T T ee<br>Ne SSSESSSARS HE<br>10<br>10 [-3]<br>TTT oF TOK] ptttNNEE DC<br>\ |} te<br>0 aN 10 [-4] aelOe<br>0 25 50 75 100 125 150 10 [0] 10 [1] 10 [2] 10 [3]<br>T C [°C] V DS [V]<br>f P tot=f( T C) e I D=f( V DS T C D t p<br>paremeies SC~—CS<br>P tot I D<br>**----- End of picture text -----**<br>


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10 [2] 10 [1]<br>J} a<br>S S H A<br>10 [1] P| <P a<br>e e e IE TE eer TTT ETM<br>SSS 1 µs 0.5 im. Pa<br>10 [0] SSSHTH== === 10 ms NHS= === =< SeCNT 10 [0] ~aoo”C A il<br>10 µs 0.2<br>1 ms<br>= 0.1<br>£ 10 [-1] ETLoNEE IN = = To TT Th<br>0.05<br>SSSSSNeeSaas NIKaEN TTT 100 µs 0.02 oe’7 A AA<br>0.01<br>single pulse<br>EHS AEE<br>10 [-2] ee NG 10 [-1] a ll<br>J} ON EE Ce Ce<br>TTT O_o<br>10 [-3]<br>ff I ITT<br>DC<br>SE NT ACE<br>AH SF TIENEN<br>10 [-4] eel 10 [-2] LENT TT<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC t P D=t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPP60R360P7** 

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**----- Start of picture text -----**<br>
40 25<br>ECE EEEEEEEEELEECES<br>PEEYTEEEEEEEE PE T eT?E tT? Tete eT eTTt yeyyt ee eTTy yeytT eeee<br>EEE EEE EEEELELCES<br>TT 20 P EP E t TT?TTTeteEET TtTTyt e e Tyet yttT e ete Tt<br>30 20 V<br>20 V 10 V<br>10 V 8 V 8 V<br>; ZB EEE EEE EEE<br>7 V<br>15<br>6 V<br>7 V<br>a SO gr<br>~ 20 Yoo ase Zaeeeeeee<br>10<br>eZVanTHVT LITE SOey 7afer<br>5.5 V<br>10 Ji 6 V SO ff<br>5<br>5 V<br>fi 5.5 V : : H H Ee<br>4.5 V<br>5 V<br>_ ee 4.5 V 57J OELLae seuneeeueeeeeeeCELE<br>0 0<br>0 5 10 15 20 0 5 10 15 20<br>V DS V DS<br>[Vv] [Vv]<br>I D=f( V DS T j V GS I D=f( V DS T j V GS<br>I D I D<br>**----- End of picture text -----**<br>


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Final Data Sheet 

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**IPP60R360P7** 

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**----- Start of picture text -----**<br>
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Final Data Sheet 

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**IPP60R360P7** 

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690 10 [4]<br>680 [oY ee<br>670 a A WEEE EEEE EEE eee]<br>660<br>650 a a A 10 [3] Se eee<br>Ciss<br>640 se a e e<br>=a B EE eee<br>> 630 a Co PY ttt tte ee PP TE TE Ty ey<br>620 a One<br>10 [2]<br>610<br>Pp SSS<br>SESS SESS<br>600<br>590 a A RN<br>Coss<br>580<br>a 7 10 [1]<br>570 LA. | || | | | | Re<br>560 [7A | | [| [| | f—_ AREEEE EE<br>a CO a——<br>550<br>a —_-—. ——<br>Crss<br>540 10 [0]<br>-50 -25 0 25 50 75 100 125 150 0 100 200 300 400 500<br>T j [°C] V DS [V]<br>V BR(DSS)=f( T j I D C =f( V DS V GS f<br>C<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2.0<br>1.6<br>1.2<br>2 Lo<br>0.8<br>0.4<br>0.0<br>0.0 100.0 200.0 300.0 400.0 500.0<br>V DS [V]<br>E oss = f (V DS )<br>oss<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**600V�CoolMOSª�P7�Power�Transistor IPP60R360P7** 

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## **5�����Test�Circuits** 

## **Table�8�����Diode�characteristics** 

**==> picture [509 x 369] intentionally omitted <==**

**----- Start of picture text -----**<br>
Test circuit for diode characteristics Diode recovery waveform<br>V ,I<br>R g 1 VDS(peak) VDS<br>VDS<br>V DS IF tF trr tS<br>R g  2 dIF / dt<br>I F t<br>QF QS 10 %Irrm<br>R g 1 = RI F g  2 Irrm dIrr / dt tQrrrr =t= QF +tF S+QS<br>Table�9�����Switching�times<br>Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>V DS<br>V GS 10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>**----- End of picture text -----**<br>


## **Table�9�����Switching�times** 

## **Table�10�����Unclamped�inductive�load** 

**==> picture [509 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

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Rev.�2.2,��2017-03-02 

**IPP60R360P7** 

Final Data Sheet 

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**IPP60R360P7** 

- 

- 

- 

- 

Final Data Sheet 

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**IPP60R360P7** 

## IPP60R360P7 

## Previous Revision 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2017-02-03|Release of final version|
|2.1|2017-02-17|Modified Safe Operating Area diagrams on page 7|
|2.2|2017-03-02|updated y-axis label diagram 8|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

14 



## Links

- [View this product on Novapart](https://novapart.co/products/IPP60R360P7XKSA1/power-mosfet-n-channel-600-v-9-a-0305-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipp60r360p7xksa1/mosfet-n-ch-600v-9a-to-220/dp/2784034)
---

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