# Power MOSFET, N Channel, 600 V, 7 A, 0.295 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:3373688/)

**URL**: https://novapart.co/products/IPP60R360CFD7XKSA1/power-mosfet-n-channel-600-v-7-a-0295-ohm-to-220
**SKU**: IPP60R360CFD7XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6940
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS CFD7 |
| Qualification | - |
| Power Dissipation | 43W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7A |
| Drain Source On State Resistance | 0.295ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3373688/)

**IPP60R360CFD7** 

## **MOSFET** 

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tab<br>**----- End of picture text -----**<br>


(ZVS) and LLC. Resulting from reduced gate charge (Q g ), best-in-class reverse recovery charge (Q rr ) and improved turn off behavior CooIMOS™ 

## **Features** 

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Drain<br>Pin 2, Tab :<br>OTN<br>Gate<br>Pin 1<br>Source<br>Pin 3<br>**----- End of picture text -----**<br>


* Best-in-class reverse recovery charge (Q rr) ¢ Improved MOSFET reverse diode dv/dt and di F /dt ruggedness DS(on)*Qg DS(on)*Eoss ** Best-in-class Lowest FOM R R DS(on) in SMDand R and THD packages 

## **Benefits** 

|**Parameter**|**Value**|**Value**|**Unit**||||
|---|---|---|---|---|---|---|
|VDS @Tj,max|650||V||||
|RDS(on),max|360||mΩ||||
|Qg,typ|14||nC||||
|ID,pulse|24||A||||
|Eoss @400V|1.6||µJ||||
|Bodydiode diF/dt|1300||A/µs||||
||||||||
|||**Package**||**Marking**|||
|IPP60R360CFD7||PG-TO 220-3||60R360F7||see Appendix A|



Final Data Sheet 

1 

**600V�CoolMOSª�CFD7�Power�Transistor IPP60R360CFD7** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 

Final Data Sheet 

2 

Rev.�2.0,��2019-06-11 

**600V�CoolMOSª�CFD7�Power�Transistor IPP60R360CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|7<br>5|A|TC=25°C<br>TC=100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|24|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|29|mJ|ID=2.0A; VDD=50V; see table 10|
|Avalanche energy, repetitive|_E_AR|-|-|0.14|mJ|ID=2.0A; VDD=50V; see table 10|
|Avalanche current, single pulse|_I_AS|-|-|2.0|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|120|V/ns|_V_DS=0...400V|
|Gate source voltage(static)|_V_GS|-20|-|20|V|static;|
|Gate source voltage(dynamic)|_V_GS|-30|-|30|V|AC(f>1 Hz)|
|Power dissipation|_P_tot|-|-|43|W|_T_C=25°C|
|Storage temperature|_T_stg|-55|-|150|°C|-|
|Operating junction temperature|_T_j|-55|-|150|°C|-|
|Mountingtorque|-|-|-|60|Ncm|M3 and M3.5 screws|
|Continuous diode forward current|_I_S|-|-|7|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|24|A|_T_C=25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|70|V/ns|_V_DS=0...400V,_I_SD<=7A,_T_j=25°C<br>see table 8|
|Maximum diode commutation speed|diF/dt|-|-|1300|A/µs|_V_DS=0...400V,_I_SD<=7A,_T_j=25°C<br>see table 8|
|Insulation withstand voltage|_V_ISO|-|-|n.a.|V|_V_rms,_T_C=25°C,_t_=1min|



> 1) Limited by Tj,max. 

> 2) Pulse width tp limited by Tj,max 

3) Identical low side and high side switch with identical RG 

Final Data Sheet 

3 

Rev.�2.0,��2019-06-11 

**600V�CoolMOSª�CFD7�Power�Transistor IPP60R360CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction  - case|_R_thJC|-|-|2.89|°C/W|-|
|Thermal resistance,junction  - ambient|_R_thJA|-|-|62|°C/W|leaded|
|Thermal resistance, junction  - ambient<br>for SMD version|_R_thJA|-|-|-|°C/W|n.a.|
|Soldering temperature, wave- & reflow<br>soldering allowed|_T_sold|-|-|260|°C|1.6mm (0.063 in.) from case for 10s|



Final Data Sheet 

Rev.�2.0,��2019-06-11 

4 

**600V�CoolMOSª�CFD7�Power�Transistor IPP60R360CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|600|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|3.5|4|4.5|V|_V_DS=_V_GS,_I_D=0.14mA|
|Zero gate voltage drain current1)|_I_DSS|-<br>-|-<br>3|1<br>37|µA|_V_DS=600V,_V_GS=0V,_T_j=25°C<br>_V_DS=600V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.295<br>0.674|0.36<br>-|Ω|_V_GS=10V,_I_D=2.9A,_T_j=25°C<br>_V_GS=10V,_I_D=2.9A,_T_j=150°C|
|Gate resistance|_R_G|-|11.6|-|Ω|_f_=1MHz,opendrain|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|679|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Output capacitance|_C_oss|-|11|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Effective output capacitance, energy<br>related2)|_C_o(er)|-|20|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance, time<br>related3)|_C_o(tr)|-|198|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|15.5|-|ns|_V_DD=400V,_V_GS=10V,_I_D=4.0A,<br>_R_G=10.2Ω;seetable9|
|Rise time|_t_r|-|12|-|ns|_V_DD=400V,_V_GS=10V,_I_D=4.0A,<br>_R_G=10.2Ω;seetable9|
|Turn-off delay time|_t_d(off)|-|41.5|-|ns|_V_DD=400V,_V_GS=10V,_I_D=4.0A,<br>_R_G=10.2Ω;seetable9|
|Fall time|_t_f|-|8.5|-|ns|_V_DD=400V,_V_GS=10V,_I_D=4.0A,<br>_R_G=10.2Ω;seetable9|



## **Table�6�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|4|-|nC|_V_DD=400V,_I_D=4.0A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|5|-|nC|_V_DD=400V,_I_D=4.0A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|14|-|nC|_V_DD=400V,_I_D=4.0A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.8|-|V|_V_DD=400V,_I_D=4.0A,_V_GS=0to10V|



> 1) Maximum specification is defined by calculated six sigma upper confidence bound 

> 2) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 3) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

Rev.�2.0,��2019-06-11 

5 

**600V�CoolMOSª�CFD7�Power�Transistor IPP60R360CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|1.0|-|V|_V_GS=0V,_I_F=2.9A,_T_j=25°C|
|Reverse recovery time|_t_rr|-|81|122|ns|_V_R=400V,_I_F=4.0A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Reverse recovery charge|_Q_rr|-|0.28|0.56|µC|_V_R=400V,_I_F=4.0A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Peak reverse recovery current|_I_rrm|-|6.4|-|A|_V_R=400V,_I_F=4.0A,d_i_F/d_t_=100A/µs;<br>see table 8|



Final Data Sheet 

6 

Rev.�2.0,��2019-06-11 

**IPP60R360CFD7** 

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50 10 [2]<br>1 µs<br>. 10 [1] Se EE e e SO TTI<br>40 ee Oe Pt le EAN NTT<br>10 µs<br>oNff] NEN<br>10 [0]<br>30 Ty NTT) AEE NG RNE NS<br>100 µs<br>= PF of FN Tf 2 10 [-1] erRN<br>., 2 NNNTT<br>20 X TOTTI NTT 1 ms<br>10 [-2]<br>a TT NTT<br>10 ms<br>a ee DC CELT<br>10 Nae SEER ONE7<br>10 [-3]<br>ew Et ONT<br>0 PF of oF Tl UT UN 10 [-4] PCa a a ee ee<br>0 25 50 75 100 125 150 10 [0] 10 [1] 10 [2] 10 [3]<br>T C V DS<br>OCOCOCSCSC P tot=f( T C) S I D=f( SSCSCiCSSY V DS T C D t p<br>Po [°C] paramo [V] SSCSC~*d<br>P tot I D<br>**----- End of picture text -----**<br>


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10 [2] 10 [1]<br>——$ — — L | Tit TT Ti rT Tt rT To)<br>=e =F HFS HH<br>PT SEE —— HF I CCrreCII<br>10 [1] CAT a<A 1 µs ooo | CrP CEPI CPN LCI LCI<br>-——S  OSNS 10 µs mm ~~ eee<br>SFE || UH I<br>10 [0]<br>ZING NTIS EN TTTT LMLear M TI<br>100 µs 0.5<br>RA wy<br>z 10 [-1] |a aotoNLNNNCU {8 10 [0] weeWIA4<br>SS es \ eee es ee Geer — LT Titiwi<br>==ee SS Oe 1 ms ie aSeri 0.2<br>10 [-2] rT TE NTT 0297/0<br>10 ms 0.1<br>DC<br>SSS ent 0.05 eA<br>10 [-3] ANT YAA<br>0.02<br>0.01<br>a a ee ee 4<br>TC oct on single pulse<br>10 [-4] 10 [-1]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC t P D=t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPP60R360CFD7** 

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40 25<br>FEE EEE EEE CEEECEE<br>PEEYTEEEEEEEE PTET eT TET TTT eet ye tT ee ey<br>20 V<br>20 V 20 Ltt ttt tt tt tt tt<br>30 TTTTTTTTT TTTyy 10 V JT.4 PYLiL t_tTpp TEE EEE pp ee ETT eee eT 10 V Eg<br>8 V<br>8 V<br>ZZ Rt} tk 4<br>TTT) || 1) | | aTeee =fl ce S ESSEE Se SSeSgrt 7 V an AT<br>15<br>.s 20 LALE A i FEEGEEEE CHee<br>7 V<br>Fy Ce e oo F&O ee<br>Yj g Rae Annee<br>10<br>AZ o<br>Y/ oo) |} E RR 6 V<br>Vi a P|OT Ef hee<br>10 y ,/<br>5 Suny’ [Gouseeseseeseae] 5.5 V<br>ft)AAEREEEEEE 6 V Ae |<br>Vas EEE Eee GASSES 5 V<br>5.5 V<br>0 A= 4.5 V 5 V = | 0 TATArey 4.5 V Te<br>0 5 10 15 20 0 5 10 15 20<br>V DS V DS<br>[Vv] [Vv]<br>I D=f( V DS T j V GS I D=f( V DS T j V GS<br>1.200 LEELA EEE ELEEEE 2.5 ————<br>1.100 ae ee ee feee<br>LEE 5.5 V LEAL EEE 6.5 V LEEEE 2.0 —t—_—_+++++ A<br>1.000 TE EAE LIZA ELL egee<br>OU /<br>10 V<br>EU RRR G LRRER IR AUPE —— ttt TA<br>6 V 7 V<br>0.900<br>20 V<br>_ Pe Ay ranean ee ee<br>1.5<br>HH WA a en<br>0.800<br>bed SH Af ert<br>PLL VIVAL ALLL 2<br>LL TSW<br>0.700<br>1.0<br>VDA LALALZA ZA —_}ee ee4ee_}___}—<br>MLL LE. ee 4<br>0.600 EZSererAJOL TTTOEene TTT TTT TTT] eea aaee ee ee ee ee<br>=——aae al es<br>0.500 PEE LELLEL EEE EEL ELLEEEE 0.5 fs<br>0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150<br>I D [A] T j [°C]<br>R DS(on)=f( I D T j V GS R DS(on)=f( T j I D V GS<br>I D I D<br>] Ω<br>DS(on)  [normalized]<br>R DS(on)<br>R<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPP60R360CFD7** 

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40 12<br>TTT) Po<br>10<br>30 TTT PTT LEE LEE LLL EE<br>25 °C a LTT 120 V A 400 V<br>8<br>ToT<br>z 20 TTT PTT TTT| 6 E ET TAeeTT<br>| lz TAA<br>150 °C<br>Coe<br>4<br>10 TTT TTA TTTa | CeceVLE AL E LELELL<br>2<br>Speer<br>SOAR ELE EEL ELE<br>0 TTT /ATT TTT 0 A LLELELLELEEL E EE E L EE EL<br>0 2 4 6 8 10 12 0 5 10 15 20<br>V GS [Vv] Q gate [nC]<br>I D=f( V GS V DS T j V GS=f( Q gate I D V DD<br>I D V GS<br>**----- End of picture text -----**<br>


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10 [2] 30<br>SEES SESS ESE EEES a<br>Se a<br>rT tTtT?_t_t_E tT T_T Ett tT tet 25 aA a<br>CEE CECE ECE a<br>10 [1] a 20 a a<br>25 °C<br>ee ee eee Vo<br>NN ee 125 °C ee 15  —<——_————<br>= RECESS<br>PALLET AAR EEL ———<br>10 [0] 10<br>SEES / | es i, GR<br>a SS SSS aQe<br>FEE ELLUILELEL ELL EL ELL 5 oN<br>CEE CoA —— ><br>PELLEEL e s|e<br>10 [-1] 0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 25 50 75 100 125 150<br>V SD [V] T j [°C]<br>I F=f( V SD T j E AS=f( T j I D V DD<br>I F AS<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPP60R360CFD7** 

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690 10 [4]<br>po fp fp ee SS5nSnsaa==S=s====se<br>660 Os [a] Z| 10 [3] A eeCE<br>Ciss<br>A ee ee ae ee:PT 222222222| fT et tee et==========Te tT eT eT eT<br>630 Py 10 [2] OURS S0S 00Seeeeee<br>2 eee}++4+ |g BESS<br>ee PORE<br>Coss<br>600 eee 10 [1] (CCERRER Ee<br>Hf 7, of td [oe eeeeeeee<br>| xy {| | | | [ ite tt tt PP | ee<br>Crss<br>570 10 [0]<br>yt ee er<br>ee ====================<br>meee rt tt? tet tee tet Te ty tT eT<br>540 Pot | | ft ft] 10 [-1] FLT L ELL ELLL EL LEE EL<br>-50 -25 0 25 50 75 100 125 150 0 100 200 300 400 500<br>T j [°C] V DS [V]<br>V BR(DSS)=f( T j I D C =f( V DS V GS f<br>C<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
3<br>2 TLLLELLLL<br>LL LLL LL<br>BaZa<br>1 eT] Ty yf.<br>PE<br>0<br>0 100 200 300 400 500<br>V DS [V]<br>Pe E oss = f (V DS )<br>oss<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

10 

**IPP60R360CFD7** 

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**----- Start of picture text -----**<br>
Test circuit for diode characteristics Diode recovery waveform<br>V,1 y<br>R 1<br>g Vg feminineee So 7 7<br>$90 % Vps<br>r<br>@™ dv/dt<br>V DS ayt<br>t<br>R 2<br>g<br>dl, / dt } 10%Vie| 5<br>Qe 10% lm<br>I F<br>R 1 = R 2<br>g g<br>**----- End of picture text -----**<br>


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Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>V DS<br>V GS 10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>**----- End of picture text -----**<br>


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Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPP60R360CFD7** 

Final Data Sheet 

12 

**IPP60R360CFD7** 

- 

- 

- 

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Final Data Sheet 

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**IPP60R360CFD7** 

## IPP60R360CFD7 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2019-06-11|Release of final version|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

14 



## Links

- [View this product on Novapart](https://novapart.co/products/IPP60R360CFD7XKSA1/power-mosfet-n-channel-600-v-7-a-0295-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipp60r360cfd7xksa1/mosfet-n-ch-600v-75a-to-220/dp/3373688)
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> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.
