# Power MOSFET, N Channel, 600 V, 13.8 A, 0.252 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2420499/)

**URL**: https://novapart.co/products/IPP60R280P6XKSA1/power-mosfet-n-channel-600-v-138-a-0252-ohm-to-220
**SKU**: IPP60R280P6XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8160
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:13.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.252ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 104W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 13.8A |
| Drain Source On State Resistance | 0.252ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2420499/)

## MOSFET 

IPx60R280P6 

Final 

## IPA60R280P6 

## **Features** 

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**----- Start of picture text -----**<br>
TO-247 D²PAK TO-220<br>tab<br>tab<br>& y<br>ky 2 &<br>1 a 3 tL<br>FP<br>Drain<br>Pin 2, Tab ,<br>van<br>Gate (<br>Pin 1<br>caat/<br>Source<br>Pin 3<br>**----- End of picture text -----**<br>


## **Applications** 

|**Parameter**<br>~~Table~~<br>~~1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|VDS @Tj,max|650|V|
|RDS(on),max|280|mΩ|
|Qg.typ|26|nC|
|ID,pulse|39|A|
|Eoss@400V|3.5|µJ|
|Bodydiode di/dt|500|A/µs|



|~~Type/OrderingCode~~~~**|**~~|**Package**<br>~~**|**~~|**Marking**|Related Links|
|---|---|---|---|
|IPW60R280P6<br>~~Type/OrderingCode ~~~~**|**~~|PG-TO 247<br>~~**|**~~|6R280P6|see Appendix A|
|IPB60R280P6|PG-TO 263|||
|IPP60R280P6|PG-TO 220|||
|IPA60R280P6|PG-TO 220 FullPAK|||



Final Data Sheet 

2 

600V�CoolMOS™�P6�Power�Transistor IPW60R280P6,�IPB60R280P6,�IPP60R280P6, IPA60R280P6 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 

Final Data Sheet 

3 

Rev.�2.2,��2015-07-10 

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## 600V�CoolMOS™�P6�Power�Transistor IPW60R280P6,�IPB60R280P6,�IPP60R280P6, IPA60R280P6 

**2�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|13.8<br>8.8|A|TC=25°C<br>TC=100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|39|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|285|mJ|ID=2.4A; VDD=50V; see table 12|
|Avalanche energy, repetitive|_E_AR|-|-|0.43|mJ|ID=2.4A; VDD=50V; see table 12|
|Avalanche current, repetitive|_I_AR|-|-|2.4|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|100|V/ns|_V_DS=0...400V|
|Gate source voltage(static)|_V_GS|-20|-|20|V|static;|
|Gate source voltage(dynamic)|_V_GS|-30|-|30|V|AC(f>1 Hz)|
|Power dissipation (Non FullPAK)<br>TO-220, TO-263, TO-247|_P_tot|-|-|104|W|_T_C=25°C|
|Power dissipation (FullPAK)<br>TO-220FP|_P_tot|-|-|32|W|_T_C=25°C|
|Storage temperature|_T_stg|-55|-|150|°C|-|
|Operating junction temperature|_T_j|-55|-|150|°C|-|
|Mounting torque (Non FullPAK)<br>TO-220, TO-247|-|-|-|60|Ncm|M3 and M3.5 screws|
|Mounting torque (FullPAK)<br>TO-220FP|-|-|-|50|Ncm|M2.5 screws|
|Continuous diode forward current|_I_S|-|-|12.0|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|39|A|TC=25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|15|V/ns|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C<br>see table 10|
|Maximum diode commutation speed|dif/dt|-|-|500|A/µs|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C<br>see table 10|
|Insulation withstand voltage for<br>TO-220FP|_V_ISO|-|-|2500|V|_V_rms,_T_C=25°C,_t_=1min|



> 1) Limited by Tj max. Maximum duty cycle D=0.75 

> 2) Pulse width tp limited by Tj,max 

> 3)�Identical�low�side�and�high�side�switch�with�identical� _R_ G 

Final Data Sheet 

Rev.�2.2,��2015-07-10 

4 

600V�CoolMOS™�P6�Power�Transistor IPW60R280P6,�IPB60R280P6,�IPP60R280P6, IPA60R280P6 

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## **3�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics�(Non�FullPAK)�TO-220,�TO-247** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|1.2|°C/W|-|
|Thermal resistance,junction - ambient|_R_thJA|-|-|62|°C/W|leaded|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6mm (0.063 in.) from case for 10s|



## **Table�4�����Thermal�characteristics�(FullPAK)�TO-220FP** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|3.9|°C/W|-|
|Thermal resistance,junction - ambient|_R_thJA|-|-|80|°C/W|leaded|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6mm (0.063 in.) from case for 10s|



## **Table�5�����Thermal�characteristics�TO-263** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|1.2|°C/W|-|
|Thermal resistance,junction - ambient|_R_thJA|-|-|62|°C/W|device on PCB, minimal footprint|
|Thermal resistance, junction - ambient<br>for SMD version|_R_thJA|-|35|45|°C/W|Device on 40mm*40mm*1.5mm<br>epoxy PCB FR4 with 6cm² (one<br>layer, 70µm thickness) copper area<br>for drain connection and cooling.<br>PCB is vertical without air stream<br>cooling.|
|Soldering temperature, wave & reflow<br>soldering allowed|_T_sold|-|-|260|°C|reflow MSL1|



Final Data Sheet 

Rev.�2.2,��2015-07-10 

5 

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## 600V�CoolMOS™�P6�Power�Transistor IPW60R280P6,�IPB60R280P6,�IPP60R280P6, IPA60R280P6 

## **4�����Electrical�characteristics** 

at� _T_ j=25°C,�unless�otherwise�specified 

## **Table�6�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|600|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|3.5|4.0|4.5|V|_V_DS=_V_GS,_I_D=0.43mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|1<br>-|µA|_V_DS=600,_V_GS=0V,_T_j=25°C<br>_V_DS=600,_V_GS=0V,_T_j=150°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.252<br>0.655|0.280<br>-|Ω|_V_GS=10V,_I_D=5.2A,_T_j=25°C<br>_V_GS=10V,_I_D=5.2A,_T_j=150°C|
|Gate resistance|_R_G|-|5.5|-|Ω|_f_=1MHz,opendrain|
|**Table7Dynamiccharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|1190|-|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Output capacitance|_C_oss|-|54|-|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Effective output capacitance,<br>energy related1)|_C_o(er)|-|44|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance,<br>time related2)|_C_o(tr)|-|182|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|12|-|ns|_V_DD=400V,_V_GS=13V,_I_D=6.5A,<br>_R_G=3.4Ω;seetable11|
|Rise time|_t_r|-|6|-|ns|_V_DD=400V,_V_GS=13V,_I_D=6.5A,<br>_R_G=3.4Ω;seetable11|
|Turn-off delay time|_t_d(off)|-|36|-|ns|_V_DD=400V,_V_GS=13V,_I_D=6.5A,<br>_R_G=3.4Ω;seetable11|
|Fall time|_t_f|-|6|-|ns|_V_DD=400V,_V_GS=13V,_I_D=6.5A,<br>_R_G=3.4Ω;seetable11|



## **Table�8�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|7|-|nC|_V_DD=400V,_I_D=6.5A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|9.5|-|nC|_V_DD=400V,_I_D=6.5A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|25.5|-|nC|_V_DD=400V,_I_D=6.5A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|6.1|-|V|_V_DD=400V,_I_D=6.5A,_V_GS=0to10V|



> 1) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 2) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

6 

Rev.�2.2,��2015-07-10 

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## 600V�CoolMOS™�P6�Power�Transistor IPW60R280P6,�IPB60R280P6,�IPP60R280P6, IPA60R280P6 

## **Table�9�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0V,_I_F=6.5A,_T_j=25°C|
|Reverse recovery time|_t_rr|-|263|-|ns|_V_R=400V,_I_F=6.5A,d_i_F/d_t_=100A/µs;<br>see table 10|
|Reverse recovery charge|_Q_rr|-|2.8|-|µC|_V_R=400V,_I_F=6.5A,d_i_F/d_t_=100A/µs;<br>see table 10|
|Peak reverse recovery current|_I_rrm|-|22|-|A|_V_R=400V,_I_F=6.5A,d_i_F/d_t_=100A/µs;<br>see table 10|



Final Data Sheet 

Rev.�2.2,��2015-07-10 

7 

IPA60R280P6 

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**----- Start of picture text -----**<br>
110 es es es 35 a GC<br>100 rra N | _4f t<br>30<br>90<br>80 25<br>70 Se a -<br>a es ee ee ONE<br>20<br>60<br>~ Sn ———<br>50 SN ee<br>40 aee 15 Eeeeeeel ee<br>a ee es -_ON5)<br>30 10<br>20<br>a ee 5 Ee ee<br>10 poofa aPN otee<br>a ee a a<br>0 0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>T C [°C] T C [°C]<br>P tot=f( T C) P tot=f( T C)<br>a GR<br>tot tot<br>P P<br>**----- End of picture text -----**<br>


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10 [1] 10 [1]<br>ee re ee ooo SS ooo oo<br>a ee ee ee L TT TT TT TTT<br>Ct er ee Coo Co oo oro _o<br>TT TT Ty Do<br>0.5<br>PIE EET TT e M<br>10 [0] ETHIEJf} tii} EMtt | UPIerEt 10 [0] 0.2 TmCINe| UA A IL<br>0.5<br>0.1<br>> a eee ii S2 i<br>z a 0.2 z Leer Te TT<br>0.05<br>< | | eee TE < a<br>0.1<br>SA tl oA 0.02 Hb hed<br>0.05 ANN<br>10 [-1] 10 [-1]<br>0.02<br>L<Tf~_- Beetii tT TTT Peer 0.01 Co TTTTTTer<br>roa [Ct] Or A or i TTT enTTT]<br>0.01 single pulse<br>r single pulse LIT TTTy Oe CMH TT<br>10 [-2] 10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>t p [s] t p [s]<br>Z thJC t P D=t p/ T Z thJC t P D=t p/ T<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

IPA60R280P6 

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**----- Start of picture text -----**<br>
10 [2] 10 [2]<br>1 µs<br>1 µs<br>10 µs<br>10 µs<br>10 [1] 100 µs<br>10 [1] 100 µs<br>1 ms<br>1 ms<br>10 ms<br>10 [0]<br>S77 NTT tN LN<br>10 ms<br>10 [0]<br>DC<br>-Qo 0 eeeNE DC f fe 10 [-1] TNONT NUNIT<br>en SS SS S552 S SSS SESS SS SEE EEE<br>10 [-1]<br>NE 10 [-2] PIN<br>a NTTT<br>ITT S S SS 55FReeeSCE<br>10 [-2]<br>10 [-3]<br>ee ll aeeOO<br>10 [-3] 10 [-4]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [0] 10 [1] 10 [2] 10 [3]<br>V DS [V] V DS wal<br>I D=f( V DS T C D t p I D=f( V DS T C D t p<br>10 [2] 10 [2]<br>1 µs<br>1 µs<br>10 µs<br>SS S S 10 µs t 10 [1] E HS Nat<br>10 [1] 100 µs<br>100 µs<br>1 ms<br>1 ms<br>10 [0] 10 ms<br>SONS tN NU<br>10 [0] 10 ms<br>_ Fee SS AN ESS SENGEEG _ PIN<br>DC<br>LSS DC 10 [-1] ETN NET<br>Nt se NENG<br>10 [-1]<br>10 [-2]<br>ae eee ——— aoo ea<br>TT SST SSS Nt<br>10 [-2]<br>10 [-3]<br>ee ll [|a CT TTT Ur TTT TT TTTT)<br>10 [-3] 10 [-4]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [0] 10 [1] 10 [2] 10 [3]<br>V DS [V] V DS wal<br>I D=f( V DS T C D t p I D=f( V DS T C D t p<br>I D I D<br>I D I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

IPA60R280P6 

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**----- Start of picture text -----**<br>
40 25<br>a 20 V = a 20 V<br>oe  ee 10 V PEPE EEE rere 10 V Z<br>35 calcPH I HE EE eH LtSERREttt EESSSSSSeRESytt te tt tt tt 8 V [2>] wa<br>20<br>30 see7 e eee L eeY 8 V SSE SSS effYY Z|<br>EEE ee<br>p [ T fT TT tT TT TT TT WA A | TT UT oeG7 | 7 V Zee<br>25 PYyaft tT ft tT tT tT tT YA AT SSoffY/ 7 7<br>BEEREEERE 15<br>Y,<br>7i 20 a 7 a a a 7 V eeERS | CERRO02<br>I I Oy ____—_;_;_;_—NS—N— Z<br>SSE fo EE gm<br>6 V<br>10<br>15 —- FEEA e<br>Sf S f<br>|oS[| | YY | | tT tT tT tt ty tT ty iY /2<br>10<br>5.5 V<br>oe, a 6 V 5 ——_ff-—————---— - -— ——<br>5 RAFS C= aaasaS a a s e SEEE a ae e e 2)SA4 aE<br>5.5 V 5 V<br>PA E  E EE EEE SEE PAE E E  E EEEEE EE<br>4.5 V 5 V 4.5 V<br>Fo ZEEE eee<br>0 0<br>0 5 10 15 20 0 5 10 15 20<br>V DS V DS<br>[Vv] [Vv]<br>I D=f( V DS ); ; T j ==25°C ; parameter:t V GS I D=f( V DS ); ; T j = =125°C ; parameter:t V GS<br>Diagram 11: Typ. drain-source on-state resistance Diagram 12: Drain-source on-state resistance<br>1.80 0.75<br>1.70<br>1.60 0.65<br>1.50<br>1.40 0.55<br>1.30<br>1.20 0.45<br>1.10 5.5 V 6 V 6.5 V 7 V<br>98% typ<br>1.00 10 V 0.35<br>0.90<br>20 V<br>0.80 0.25<br>0.70<br>0.60 0.15<br>0.50<br>0.40 0.05<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>I D [A] T j [°C]<br>R DS(on)=f( I D ); T j =125 °C; parameter: V GS R DS(on)=f(=f( T j ); I D =5.2 A; V GS =10V<br>I D I D<br>] Ω ] Ω<br> [<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


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0.75<br>0.65<br>0.55<br>0.45<br>98% typ<br>0.35<br>0.25<br>0.15<br>0.05<br>-50 -25 0 25 50 75 100 125 150<br>T j [°C]<br>R DS(on)=f(=f( T j ); I D =5.2 A; V GS =10V<br>] Ω<br> [<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


Final Data Sheet 

10 

IPA60R280P6 

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40<br>ee<br>a a 25 °C<br>35<br>| + — + —_ + |<br>ee 2<br>30 VV<br>co A<br>eV<br>25 [|a+ — + —_ ++} + — +<br>< 20 ee<br>——— a 150 °C<br>A<br>15 2 Sn<br>—— eo<br>es ee<br>10 ee————<br>pF<br>5<br>Poo fl<br>0 [_ | | > + 4 + fkf§ f+|<br>0 2 4 6 8 10 12<br>V GS<br>[Vv]<br>I D=f( V GS V DS T j<br>I D<br>**----- End of picture text -----**<br>


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10<br>PEPE EEE AA<br>9 PLETEPLETE TET EET LETLETT LEE ETT ETT EETET YYYAEE<br>8 PLETEPTTL TTT TET TTTLET LETTTTT ETT ETTAYA LEETT<br>120 V 480 V<br>7 PIT TTT TTT TTTtr<br>6 LETTEPEE TTLTIT| A ATLE A A EEE<br>EEE<br>_= 5 P LETELETT TEIALAP T E LEE TELEEETT EE TE EEE E EEE<br>PCEEEECCCCCCCCCCCee<br>4 eeeeee<br>PLETE TAT LET LE EEE EEE EEE EE<br>PTET VEE TET ET EET EE EEE EE<br>3 PLETAL ETT EL TEL TET EET EEE EEE<br>BEDAe<br>2 LITA I TTT TTT TT TE TE<br>BPAR<br>10 VELLALITTLEVILE T EET EET EEET ET TLEEE E TTP ET TT EE EEETE EE ELEEEEEEETL<br>0 5 10 15 20 25 30<br>Q gate [nC]<br>V GS=f( Q gate I D V DD<br>GS<br>V<br>**----- End of picture text -----**<br>


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10 [2] ==———————— 300 [)<br>ee a<br>250<br>TTTPEELE MLL — ——<br>10 [1] 200<br>——— Se S<br>FEE SH EE EEE EE EH —<br>125 °C 25 °C<br>-< GH Fe 150<br>PLT TEPSeE ET EE EE EL -Ft<br>iii <<<a a<br>10 [0] 100<br>———— a<br>ee A ON<br>pfPETE L APE EE ET EEE EE 50 -_FN<br>FLEE EEEELLLLLLLEEEEE a ee a<br>10 [-1] 0<br>0.0 0.5 1.0 1.5 2.0 25 50 75 100 125 150<br>V SD [V] T j [°C]<br>I F=f( V SD T j E AS=f( T j I D V DD<br>I F AS<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

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IPA60R280P6 

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700 10 [4]<br>a ee SSS SSS SSS 55555555===<br>680<br>Ciss<br>660<br>10 [3]<br>640<br>of = =<br>_= 620 pp-rprrryrree!]| ef |le 10 [2] ERAGENIIte<br>600 Coss<br>580<br>S|) Ca<br>10 [1]<br>560 | ry | | | | | | ft = =---------===-==—— Crss<br>540<br>eee 5h Ge ee<br>520 a 10 [0] PLT ET EEE ELT EY EEE ELT<br>-75 -50 -25 0 25 50 75 100 125 150 175 0 100 200 300 400 500<br>T j [°C] V DS [V]<br>V BR(DSS)=f( T j I D C =f( V DS V GS f<br>C<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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5 a ee<br>a ee<br>4 seaa eeee Peeeee ee4<br>aa eeeees A<br>a ee ee<br>— 3 aaa eeeeee De ee2Aee<br>2 a ee0<br>= a ee<br>a ee ee 2 ee<br>2 a eeee<br>a a ee ee<br>a ee ee ee ee ee<br>| | | h hTA<br>aa aesi eeee ee ee ee<br>1<br>a a ee ee ee<br>|2aA. | | J ft tfty<br>[7 | ee[| ft<br>0 Yot| | | ft ft ft ty<br>0 100 200 300 400 500<br>V DS<br>E oss = f (V DS )<br>oss<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

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## 600V�CoolMOS™�P6�Power�Transistor IPW60R280P6,�IPB60R280P6,�IPP60R280P6, IPA60R280P6 

## **6�����Test�Circuits** 

## **Table�10�����Diode�characteristics** 

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Test circuit for diode characteristics Diode recovery waveform<br>V ,I<br>R g 1 VDS(peak) VDS<br>VDS<br>V DS IF tF trr tS<br>R g  2 dIF / dt<br>I F t<br>QF QS 10 %Irrm<br>R g 1 = RI F g  2 Irrm dIrr / dt tQrrrr =t= QF +tF S+QS<br>**----- End of picture text -----**<br>


## **Table�11�����Switching�times** 

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Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>V DS<br>V GS 10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>**----- End of picture text -----**<br>


## **Table�12�����Unclamped�inductive�load** 

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Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

13 

Rev.�2.2,��2015-07-10 

IPA60R280P6 

Final Data Sheet 

14 

IPA60R280P6 

Final Data Sheet 

15 

IPA60R280P6 

Final Data Sheet 

16 

600V�CoolMOS™�P6�Power�Transistor IPW60R280P6,�IPB60R280P6,�IPP60R280P6, IPA60R280P6 

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MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX DOCUMENT NO.<br>A 4.50 4.90 0.177 0.193 Z8B00003319<br>A1 2.34 2.85 0.092 0.112<br>A2 2.42 2.86 0.095 0.113 SCALE 0<br>b 0.65 0.90 0.026 0.035<br>b1 0.95 1.38 0.037 0.054 2.5<br>b2 0.95 1.51 0.037 0.059<br>b3 0.65 1.38 0.026 0.054 0 2.5<br>b4 0.65 1.51 0.026 0.059 5mm<br>c 0.40 0.63 0.016 0.025<br>D 15.67 16.15 0.617 0.636<br>EUROPEAN PROJECTION<br>D1 8.97 9.83 0.353 0.387<br>E 10.00 10.65 0.394 0.419<br>e 2.54 (BSC) 0.100 (BSC)<br>e1 5.08 0.200<br>N 3 3<br>H 28.70 29.75 1.130 1.171 ISSUE DATE<br>L 12.78 13.75 0.503 0.541 05-05-2014<br>L1 2.83 3.45 0.111 0.136<br>�� 2.95 3.38 0.116 0.133 REVISION<br>Q 3.15 3.50 0.124 0.138 04<br>**----- End of picture text -----**<br>


## **Figure�4�����Outline�PG-TO�220�FullPAK,�dimensions�in�mm/inches** 

Final Data Sheet 

17 

Rev.�2.2,��2015-07-10 

IPA60R280P6 

- IFX CoolIMOS **TM** 

- • IFX CoolIMOS__ **TM** • **TM** 

- 

Final Data Sheet 

18 

IPA60R280P6 

## IPW60R280P6, IPB60R280P6, IPP60R280P6, IPA60R280P6 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2013-12-04|Release of final version|
|2.1|2013-12-05|Release of multi-package datasheet|
|2.2|2015-07-10|PG-TO 263 package added|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

19 



## Links

- [View this product on Novapart](https://novapart.co/products/IPP60R280P6XKSA1/power-mosfet-n-channel-600-v-138-a-0252-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipp60r280p6xksa1/mosfet-n-ch-600v-13-8a-to-220/dp/2420499)
---

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