# Power MOSFET, N Channel, 80 V, 70 A, 8400 µohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2480852/)

**URL**: https://novapart.co/products/IPP100N08N3GXKSA1/power-mosfet-n-channel-80-v-70-a-8400-ohm-to-220
**SKU**: IPP100N08N3GXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3700
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0084ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 100W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 70A |
| Drain Source On State Resistance | 8400µohm |
| Gate Source Threshold Voltage Max | 2.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2480852/)

## **IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G** 

## "%&$!"# **[™] 3 Power-Transistor** 

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## **Features** 

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|Type|#))   '|#)#   '|
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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Maximum ratings,|at|V|=25|°C,|unless|otherwise|specified|
|Parameter|Symbol|Conditions|Value|Unit|
|I|9|T|8|*#|/(|6|
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|Operating and storage temperature|Pf|-55|...|175|°C|

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+# 

**IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G** 

|**Parameter**||||**Symbol **||**Conditions**|||**Values**|||**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||**min.**|**typ.**||**max.**||
|**Thermal characteristics**|||||||||||||
|||||_R_T@8||||%|%||)&-|A'K|
|Thermal resistance,||||_R_T@6||*<br>~~minimal footprint~~|,#|<br> <br>%<br>%<br>~~ff] ~~|||,(<br> ~~2 |~~||
|**Electrical characteristics,**|at|V|=25 °C, unless||otherwise specified||||||||



|**Static characteristics**|||||||||
|---|---|---|---|---|---|---|---|---|
|~~Drain-source breakdown voltage~~|||_V_"7G#9HH _V_=H<br>_I_9<br>_V_=H"T#<br>_V_9H4_V_=H _I_9<br>~~P|~~<br>~~=0V, =1mA ~~||0(<br>%<br>*<br>*&0<br> ~~Pf~~||%<br>+&-|J|
|Zero<br>gate<br>voltage<br>drai<br>ero gate voltage<br>drain curren|t||_I_9HH|_V_9H<br>_V_=H<br>_T_V<br>“80V,<br>ON,<br>=25 °C|%|(&)|)|r6|
|||||_V_9H<br>_V_=H<br>_T_V<br>=80 V,<br>=0 V,<br>=125 °C|%|)(|)((||
|~~Gate-source leakage current~~<br>Drain-source on-state resistance||_I_=HH<br>_R_9H"[Z#<br>~~po~~||_V_=H<br>_V_9H<br>_V_=H<br>_I_9<br>~~=20 V,~~<br>~~=0V Pf~~<br>=10V,<br>=46A|%<br>)<br>)((<br>%<br>0&,<br>)(<br>~~Pf~~<br> ~~Pf]~~|||Z6<br>Y"|
|||||_V_=H<br>_I_9|%|))&(|)0&*||
|.<br>.<br>Drain-source on-state resistance|||_R_9H"[Z#|_V_=H<br>_I_9<br>"HB9#<br>=10V,<br>=46A,|%|0&)|1&/||
|||||_V_=H<br>_I_9<br>"HB9#|%|)(&/|)/&1||
||||_R_=||%|)&.|%|"|
|I^MZ_O[ZPaOMZOQ|||_g_R_|g_V_9Hg5*g_I_9g_R_9H"[Z#YMd<br>_I_9|+(|-1|%|H|



,# 

**IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G** 

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|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics**|||||||
||_C_U__|_V_=H<br>_V_9H<br>_f_<br>" J<br>=0V,<br>=40V,<br>=1<br>~~P|~~|%|)0)(|*,)(|\<|
|;<br>Output capacitance<br>~~Reversetransfercapacitance~~|_C_[__<br>~~P|~~||%<br>~~Pf]~~|,1(<br>~~Pf]~~|.-*<br>~~Pf]~~||
|~~Reversetransfercapacitance~~|_C_^__<br>~~P|~~||%<br>~~Pf]~~|*(<br>~~Pf]~~|%<br>~~Pf]~~||
|~~Reverse transfer capacitance~~|_t_P"[Z#<br>~~P|~~|_V_99<br>_V_=H<br>_I_9<br>_R_=<br>"<br>~~P|~~|%<br>~~Pf]~~|),<br>~~Pf]~~|%<br>~~Pf]~~|Z_|
||_t_^||%|,.|%||
||_t_P"[RR#||%|**|%||
||_t_R||%|-|%||
|#<br>Gate Char e Characteristics|||||||
||_Q_S_|_V_99<br>_I_9<br>_V_=H<br>=40V,<br>=46A,|%|1|%|Z8|
|_|_Q_SP||%|-|%||
|_|_Q__c||%|)(|%||
||_Q_S||%|*.|+-||
||_V_\XMQMa||%|-&*|%|J|
||_Q_[__|_V_99<br>_V_=H|%|+-|,/|Z8|
|**Reverse Diode**<br>~~Diodecontinousforwardcurrent~~<br>~~P|~~<br>~~Pf]~~|||||||
|~~Diodecontinousforwardcurrent~~|_I_H<br>~~P|~~|_T_8<br>~~P|~~<br>=25 °C|%<br>~~Pf]~~|%<br>~~Pf]~~|/(<br>~~Pf]~~|6|
|~~Diode continous forward current~~|_I_H$\aX_Q<br>~~P|~~||%<br>~~Pf]~~|%<br>~~Pf]~~|*0(<br>~~Pf]~~||
|Diode forward<br>volt<br>iode forward<br>voltage|_V_H9|_V_=H<br>_I_<<br>_T_V<br>HOM<br>46A,<br>=25 °C|%|)&(|)&*|J|
||_t_^^|_V_G<br>_I_<<br>P_i_<'P_t_<br>C|%|-/|%|Z_|
||_Q_^^||%|)(*|%|Z8|
|-#<br>See figure 16 for gate charge parameter definition|||||||



-# 

**IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G** 

## **1 Power dissipation** 

_P_ `[`4R" _T_ 8# 

## **2 Drain current** 

_I_ 94R" _T_ 8 ); _V_ =H" 

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**----- Start of picture text -----**<br>
120 80<br>60<br>80<br>40<br>40<br>20<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>T  C [°C] T  C [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>I  94R" V  9H ); T  8 25 °C; D  4( Z  `T@84R" t  \#<br>parameter: t  \ parameter: D  4 t  \' T<br>10 [3] 10 [1]<br>limited by on-state<br>^Q_U_`MZOQ<br>1 C<br>10 C<br>10 [2] 10 [0]<br>(&-<br>100 C J<br>1ms (&*<br>(&)<br>10 ms (&(- Y<br>(&(*<br>10 [1] 98 10 [-1]<br>(&()<br>single pulse<br>10 [0] 10 [-2]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V  DS [V] t  p [s]<br> [W]  [A]<br>P  tot I  D<br> [A]  [K/W]<br>I  D<br> thJC<br>Z<br>**----- End of picture text -----**<br>


**IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G** 

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**----- Start of picture text -----**<br>
5 Typ. output characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I  94R" V  9H ); T  V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
parameter: V  =H<br>280<br>10V 8V<br>240<br>200 7V<br>160<br>6.5V<br>120<br>6V<br>80<br>5.5V<br>40<br>5vV<br>45 V<br>0<br>0 1 2 3 4 5<br>V  DS [V]<br>7 Typ. transfer characteristics<br>4R" V  =H ys | 9H [[g5*g]] [[I]] 9 [[g]] [[R]] 9H"[Z#YMd<br>parameter: T  V<br>180<br>150<br>120<br>90<br>60<br>30<br>0<br>0 2 4 6 8<br>V  GS [V]<br> [A]<br>I  D<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


**7 Typ. transfer characteristics** 

_I_ 94R" _V_ =H ys | 9H[[g5*g]] _[[I]]_ 9[[g]] _[[R]]_ 9H"[Z#YMd 

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**----- Start of picture text -----**<br>
6 Typ. drain-source on resistance<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
R  9H"[Z#4R" I  9 ); T  V =25 °C<br>parameter: V  =H<br>20<br>5V 5.5V 6V 6.5V 7V<br>16<br>Gq 12<br>8V<br>10V<br>8<br>4<br>0<br>0 40 80 120 160 200 240 280<br>I  D [A]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


**8 Typ. forward transconductance** _g_ R_4R" _I_ 9 yy _T_ V =25°C 

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120<br>80<br>40<br>0<br>0 40 80 120 160 200<br>I  D [A]<br> [S]<br> fs<br>g<br>**----- End of picture text -----**<br>


**IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G** 

## **9 Drain-source on-state resistance** 

_R_ 9H"[Z#4R" _T_ V ); _I_ 9 =46A; _V_ =H 

## **10 Typ. gate threshold voltage** 

_V_ =H"`T#4R" _T_ V ); _V_ =H4 _V_ 9H 

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I  9<br>**----- End of picture text -----**<br>


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20<br>15<br>a YMd<br>10<br>`e\<br>5<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

_C_ 4R" _V_ 9H OV; _V_ =H _f_ =1 " J 

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**----- Start of picture text -----**<br>
4<br>3<br>460 A<br>46 A<br>2<br>1<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [V]<br> GS(th)<br>V<br>**----- End of picture text -----**<br>


## **12 Forward characteristics of reverse diode** 

_I_ <4R" _V_ H9# 

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**----- Start of picture text -----**<br>
T<br> V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [4]<br>8U__<br>10 [3] 8[__<br>10 [2]<br>8^__<br>10 [1]<br>0 20 40 60 80<br>V  DS [V]<br>[pF]<br>C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [3]<br>10 [2]<br>O<br>175 °C, max<br>25 °C, max<br>10 [1]<br>10 [0]<br>0 0.5 1 1.5 2<br>V  SD [V]<br> [A]<br>I  F<br>**----- End of picture text -----**<br>


**IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G** 

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**----- Start of picture text -----**<br>
13 Avalanche characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I  6H4R" t  6J ); R  =H =25 "<br>parameter: T  V"_`M^`#<br>100<br>150°C 100°C 25°C<br>10<br>1<br>0.1 1 10 100 1000<br>t  AV [µs]<br>15 Drain-source breakdown voltage<br>V  7G"9HH#4R" T  V ); I  9 =1mA<br>90<br>85<br>80<br>75<br>70<br>65<br>60<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [A]<br>I  AV<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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14 Typ. gate charge<br>**----- End of picture text -----**<br>


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V  =H4R" Q  SM`Q ); I  9<br>parameter: V  99<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
12<br>40V<br>10<br>16V 64V<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30<br>Q  gate [nC]<br> [V]<br> GS<br>V<br>**----- End of picture text -----**<br>


**16 Gate charge waveforms** 

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**----- Start of picture text -----**<br>
V =H<br>Q g<br>V S _"`T#<br>Q S"`T# Q  _c Q gate<br>Q  S_ Q  SP<br>**----- End of picture text -----**<br>


**IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G** 

**PG-TO263-3 (D²-Pak)** 

**IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G** 

**PG-TO262-3 (I²-Pak)** 

**IPP100N08N3 G IPI100N08N3 G** 

## **IPB097N08N3 G** 

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**----- Start of picture text -----**<br>
PG-TO220-3<br>**----- End of picture text -----**<br>


**IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G** 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## **Legal** Legal **Disclaimer** Disclaimer 

> The The information information given given in this in this document document shall in shall no event in no be event regarded be regarded as a guarantee as a of guarantee of conditions or 

> conditions characteristics. or characteristics. With respect With to respect any examples to any examples or hints or hints given given herein, herein, any any typical typical values stated herein 

> values and/or stated any information herein and/or regarding any information the application regarding the of the application device, of Infineon the device, Technologies hereby disclaims 

> Infineon any and Technologies all warranties hereby and disclaims liabilities any and of all any warranties kind, including and liabilities without of any limitation, kind, warranties of non- 

> including infringement without of limitation, intellectual warranties property of rights non-infringement of any third of party. intellectual property rights 

of any third party. 

Information **Information** For further information on technology, delivery terms and conditions and prices, please contact the For nearest further Infineon information Technologies on technology, Office delivery (www. terms infineon.com). and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the **Warnings** types in question, please contact the nearest Infineon Technologies Office. The Infineon Due Technologies to technical component requirements, described components in this may Data contain Sheet dangerous may be substances. used in life-support For information devices or systems on and/or the types automotive, in question, aviation please contact and aerospace the nearest applications Infineon Technologies or systems Office. only with the express written Infineon approval Technologies of Infineon components Technologies, may be if used a failure in life-support of such devices components or systems can only reasonably with be expected to the cause express the failure written of approval that life-support, of Infineon Technologies, automotive, if aviation a failure and of such aerospace components device can or system or to affect reasonably the safety be or expected effectiveness to cause of that the failure device of or that system. life-support Life support device or devices system or or to systems affect are intended to be the implanted safety or in effectiveness the human of body that device or to support or system. and/or Life support maintain devices and or sustain systems and/or are protect human life. If intended they fail, to it be is reasonable implanted in to the assume human body that or the to health support of and/or the user maintain or other and persons sustain may be endangered. 

and/or protect human life. If they fail, it is reasonable to assume that the health of the user 

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## Links

- [View this product on Novapart](https://novapart.co/products/IPP100N08N3GXKSA1/power-mosfet-n-channel-80-v-70-a-8400-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipp100n08n3gxksa1/mosfet-n-ch-80v-70a-to-220-3/dp/2480852)
---

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