# Power MOSFET, N Channel, 80 V, 80 A, 4900 µohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1775626/)

**URL**: https://novapart.co/products/IPP057N08N3GXKSA1/power-mosfet-n-channel-80-v-a-4900-ohm-to-220
**SKU**: IPP057N08N3GXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9660
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 150W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 4900µohm |
| Gate Source Threshold Voltage Max | 2.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1775626/)

## **IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G** 

## "%&$!"# **[™] 3 Power-Transistor** 

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|---|---|---|---|---|---|
|Features|
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|« Very|low on-resistance|
|*|175|°C|operating|temperature|
|*|Pb-free|lead|plating;|Ro|S|
|)#|

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## **Product Summary** 

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|sample|codes:|
|?EE(.8C(0C|

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||||||||||
|---|---|---|---|---|---|---|---|---|
|Type|
|P||IPP057|08|3G|IPIO57|08|3G|IPB054|08|
|—|
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|3|23|1|‘|
|Package|E=%ID**(%+|E=%ID*.*%+|E=%ID*.+%+|
|Marking|(-/C(0C|(-/C(0C|(-,C(0C|

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||||||||||
|---|---|---|---|---|---|---|---|---|
|Maximum ratings,|at|V|=25|°C,|unless|otherwise|specified|
|Parameter|Symbol|Conditions|Value|Unit|
|I|9|T|8|*#|0(|6|
|T|8|0(|
|I|9$\aX_Q|T|8|+*(|
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|V|=H|q*(|J|
|P|`[`|T|8|)-(|K|
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|Operating and storage temperature|Pf|-55|...|175|°C|

**----- End of picture text -----**<br>


**IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G** 

|**IPP057N08N3 G**<br>**IPI057N08N3 G**<br>**IPB054N08N3 G**<br><n<br>Cinfineon|**IPP057N08N3 G**<br>**IPI057N08N3 G**<br>**IPB054N08N3 G**<br><n<br>Cinfineon|**IPP057N08N3 G**<br>**IPI057N08N3 G**<br>**IPB054N08N3 G**<br><n<br>Cinfineon|**IPP057N08N3 G**<br>**IPI057N08N3 G**<br>**IPB054N08N3 G**<br><n<br>Cinfineon|**IPP057N08N3 G**<br>**IPI057N08N3 G**<br>**IPB054N08N3 G**<br><n<br>Cinfineon|**IPP057N08N3 G**<br>**IPI057N08N3 G**<br>**IPB054N08N3 G**<br><n<br>Cinfineon|**IPP057N08N3 G**<br>**IPI057N08N3 G**<br>**IPB054N08N3 G**<br><n<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Thermal characteristics**|||||||
|Thermalresistance,|_R_T@8|~~minimalfootprint~~|%<br>~~ff]~~|%<br>~~ff]~~|)<br>~~ff]2|~~|A'K|
|Thermal resistance,|_R_T@6|~~minimalfootprint~~|<br>~~ff]~~|<br>~~ff]~~|~~ff]2|~~||
|||*<br>+#<br>~~minimal footprint~~|%<br>~~ff]~~|%<br>~~ff]~~|,(<br>~~ff] 2 |~~||
|**Electrical characteristics,**<br>V<br>at<br>=25 °C, unless otherwise specified|||||||
|**Static characteristics**<br>~~Drain-sourcebreakdownvoltage~~<br>~~P|~~<br>~~=0V,=1mAPf~~|||||||
|~~Drain-sourcebreakdownvoltage~~|_V_"7G#9HH <br>~~P|~~|_V_=H<br>_I_9<br>~~P|~~<br>~~=0V,=1mA~~|0(<br>~~Pf~~|%<br>~~Pf~~|%|J|
|~~Drain-source breakdown voltage~~|_V_=H"T#<br>~~P|~~|_V_9H4_V_=H _I_9<br>~~P|~~<br>~~=0V, =1mA ~~|*<br> ~~Pf~~|*&0<br>~~Pf~~|+&-||
|Zero<br>gate<br>voltage<br>drai<br>t<br>ero gate voltage<br>drain curren<br>~~Gate-sourceleakagecurrent~~<br>~~po~~|_I_9HH<br>~~po~~|_V_9H<br>_V_=H<br>_T_V<br>“80V,<br>ON,<br>=25 °C|%|(&)|)|r6|
|||_V_9H<br>_V_=H<br>_T_V<br>=80 V,<br>=0 V,<br>=125 °C<br>~~=20V,~~<br>~~=0V Pf~~|%<br>~~Pf~~|)(<br>~~Pf~~|)((<br>~~Pf~~||
|~~Gate-sourceleakagecurrent~~<br>~~po~~|_I_=HH<br>~~po~~|_V_=H<br>_V_9H<br>~~=20V,~~<br>~~=0V Pf~~|%<br>~~Pf~~|)<br>~~Pf~~|)((<br>~~Pf~~|Z6|
|~~Gate-source leakage current~~<br>~~po~~<br>Drain-source on-state resistance|_R_9H"[Z#<br>~~po~~|_V_=H<br>_I_9<br>~~=20 V,~~<br>~~=0V Pf~~<br>=10V,<br>=80A|%<br>~~Pf~~<br> ~~Pf]~~|,&1<br>~~Pf~~<br>~~Pf]~~|-&/<br>~~Pf~~<br>~~Pf]~~|Y"|
|||_V_=H<br>_I_9|%|.&+|1&1||
|.<br>.<br>Drain-source on-state resistance|_R_9H"[Z#|_V_=H<br>_I_9<br>"HB9#<br>=10V,<br>=80A,|%|,&.|-&,||
|||_V_=H<br>_I_9<br>"HB9#|%|.&(|1&.||
||_R_=||%|*&*|%|"|
|I^MZ_O[ZPaOMZOQ|_g_R_|g_V_9Hg5*g_I_9g_R_9H"[Z#YMd<br>_I_9|-*|)(+|%|H|
|)#<br>+#<br>*#<br>J-STD20 and JESD22<br>See figure 3<br>Device on 40 mm x40 mm x 1.5 mm epoxy PCB FR4 with6c_<br>(one layer, 70<br>m thick) copper area for drain<br>connection. PCB is vertical in still air.|||||||



)# 

*# 

+# 

|**IPP057N08N3 G**<br>**IPI057N08N3 G**<br>**IPB054N08N3 G**<br>om re<br>Cinfineon|**IPP057N08N3 G**<br>**IPI057N08N3 G**<br>**IPB054N08N3 G**<br>om re<br>Cinfineon|**IPP057N08N3 G**<br>**IPI057N08N3 G**<br>**IPB054N08N3 G**<br>om re<br>Cinfineon|**IPP057N08N3 G**<br>**IPI057N08N3 G**<br>**IPB054N08N3 G**<br>om re<br>Cinfineon|**IPP057N08N3 G**<br>**IPI057N08N3 G**<br>**IPB054N08N3 G**<br>om re<br>Cinfineon|**IPP057N08N3 G**<br>**IPI057N08N3 G**<br>**IPB054N08N3 G**<br>om re<br>Cinfineon|**IPP057N08N3 G**<br>**IPI057N08N3 G**<br>**IPB054N08N3 G**<br>om re<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics**|||||||
||_C_U__|_V_=H<br>_V_9H<br>_f_<br>" J<br>=0V,<br>=40V,<br>=1<br>~~P|~~|%|+-/(|,/-(|\<|
|;<br>Output capacitance<br>~~Reversetransfercapacitance~~|_C_[__<br>~~P|~~||%<br>~~Pf]~~|1.+<br>~~Pf]~~|)*0(<br>~~Pf]~~||
|~~Reversetransfercapacitance~~|_C_^__<br>~~P|~~||%<br>~~Pf]~~|+.<br>~~Pf]~~|-,<br>~~Pf]~~||
|~~Reverse transfer capacitance~~|_t_P"[Z#<br>~~P|~~|_V_99<br>_V_=H<br>_I_9<br>_R_=<br>"<br>~~P|~~|%<br>~~Pf]~~|)0<br>~~Pf]~~|%<br>~~Pf]~~|Z_|
||_t_^||%|..|%||
||_t_P"[RR#||%|+0|%||
||_t_R||%|)(|%||
|#<br>Gate Char e Characteristics|||||||
||_Q_S_|_V_99<br>_I_9<br>_V_=H<br>=40V,<br>=80A,|%|)1|*-|Z8|
|ao:|_Q_SP||%|))|).||
|ao:|_Q__c||%|)1|*/||
||_Q_S||%|-*|.1||
||_V_\XMQMa||%|-&*|%|J|
||_Q_[__|_V_99<br>_V_=H|%|/(|1+|Z8|
|**Reverse Diode**<br>~~Diodecontinousforwardcurrent~~<br>~~P|~~<br>~~Pf]~~|||||||
|~~Diodecontinousforwardcurrent~~|_I_H<br>~~P|~~|_T_8<br>~~P|~~<br>=25 °C|%<br>~~Pf]~~|%<br>~~Pf]~~|0(<br>~~Pf]~~|6|
|~~Diode continous forward current~~|_I_H$\aX_Q<br>~~P|~~||%<br>~~Pf]~~|%<br>~~Pf]~~|+*(<br>~~Pf]~~||
|Diode forward<br>volt<br>iode forward<br>voltage|_V_H9|_V_=H<br>_I_<<br>_T_V<br>HOM<br>=80A,<br>=25 °C|%|)&(|)&*|J|
||_t_^^|_V_G<br>_I_<4_I_H<br>P_i_<'P_t_<br>C|%|/*|%|Z_|
||_Q_^^||%|)+(|%|Z8|
|,#<br>See figure 16 for gate charge parameter definition|||||||



,# 

**IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G** 

## **1 Power dissipation** 

_P_ `[`4R" _T_ 8# 

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**----- Start of picture text -----**<br>
180<br>150<br>120<br>90<br>60<br>30<br>0<br>0 50 100 150 200<br>T  C [°C]<br>3 Safe operating area<br>4R" V  9H yy T  8 -=25 °C; D  4(<br>parameter: t  \<br>10 [3]<br>limited by on-state<br>^Q_U_`MZOQ<br>1 C<br>10 C<br>10 [2] 100 C<br>1ms<br>10 ms<br>10 [1]<br>98<br>10 [0]<br>10 [-1] 10 [0] 10 [1] 10 [2]<br>V  DS [V]<br> [W]<br> tot<br>P<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

_I_ 94R" _V_ 9H yy _T_ 8 -=25 °C; _D_ 4( 

## **2 Drain current** 

_I_ 94R" _T_ 8 ); _V_ =H" 

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**----- Start of picture text -----**<br>
100<br>80<br>60<br>40<br>20<br>0<br>0 50 100 150 200<br>T  C [°C]<br>4 Max. transient thermal impedance<br> `T@84R"4R" t  \##<br>parameter: D  4 t  \' T<br>10 [1]<br>10 [0] i<br>(&-<br>(&*<br>(&)<br>10 [-1]<br>(&(-<br>(&(*<br>a<br>(&()<br>single pulse<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t  p [s]<br> [A]<br>I  D<br> [K/W]<br> thJC<br>Z<br>**----- End of picture text -----**<br>


**4 Max. transient thermal impedance** _Z_ `T@84R"4R" _t_ \## 

**IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G** 

## **5 Typ. output characteristics** 

_I_ 94R" _V_ 9H ); _T_ V 

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**----- Start of picture text -----**<br>
parameter: V  =H<br>320<br>8V<br>280 7V<br>6.5V<br>240<br>200<br>6V<br>160<br>120 /<br>5.5V<br>/<br>80<br>y 5V<br>40<br>45V<br>0<br>0 1 2 3 4 5<br>V  DS [V]<br>7 Typ. transfer characteristics<br>4R" V  =H ys | 9H [[g5*g]] [[I]] 9 [[g]] [[R]] 9H"[Z#YMd<br>parameter: T  V<br>180<br>150<br>120<br>90<br>60<br>30<br>0<br>0 2 4 6 8<br>V  GS [V]<br> [A]<br>I  D<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


**7 Typ. transfer characteristics** 

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**----- Start of picture text -----**<br>
I  94R" V  =H ys | 9H [[g5*g]] [[I]] 9 [[g]] [[R]] 9H"[Z#YMd<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
6 Typ. drain-source on resistance<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
R  9H"[Z#4R" I  9 ); T  V<br>parameter: V  =H<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
20<br>16<br>45V 5V 55V<br>Gq 12<br>8 6V<br>6.5V<br>7V<br>8V<br>4 10V<br>0<br>0 40 80 120 160<br>I  D [A]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


**8 Typ. forward transconductance** _g_ R_4R" _I_ 9 ); _T_ V =25°C 

**==> picture [204 x 243] intentionally omitted <==**

**----- Start of picture text -----**<br>
160<br>120<br>80<br>40<br>0<br>0 40 80 120 160<br>I  D [A]<br> [S]<br> fs<br>g<br>**----- End of picture text -----**<br>


**IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G** 

## **9 Drain-source on-state resistance** 

_R_ 9H"[Z#4R" _T_ V ); _I_ 9 =80A; _V_ =H 

## **10 Typ. gate threshold voltage** 

_V_ =H"`T#4R" _T_ V ); _V_ =H4 _V_ 9H 

**==> picture [9 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
I  9<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
12<br>10<br>8<br>a 98%<br>6<br>`e\<br>4<br>2<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

_C_ 4R" _V_ 9H OV; _V_ =H _f_ =1 " J 

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**----- Start of picture text -----**<br>
4<br>3<br>900 A<br>90 A<br>2<br>1<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [V]<br> GS(th)<br>V<br>**----- End of picture text -----**<br>


## **12 Forward characteristics of reverse diode** 

_I_ <4R" _V_ H9# 

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**----- Start of picture text -----**<br>
T<br> V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [4]<br>8U__<br>8[__<br>10 [3]<br>10 [2] 8^__<br>‘<br>10 [1]<br>0 20 40 60 80<br>V  DS [V]<br>[pF]<br>C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [3]<br>a<br>175 °C, 98%<br>10 [2]<br>10 [1]<br>||<br>ie<br>10 [0]<br>0 0.5 1 1.5 2<br>V  SD [V]<br> [A]<br>I  F<br>**----- End of picture text -----**<br>


**IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G** 

## **13 Avalanche characteristics** 

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**----- Start of picture text -----**<br>
14 Typ. gate charge<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V  =H4R"4R" Q  SM`Q ); I  9<br>parameter: V  99<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I  6H4R" t  6J ); R  =H =25 " V  =H4R"4R" Q  SM`Q ); I  9 =80A pulsed<br>parameter: T  V"_`M^`# parameter: V  99<br>100 12<br>25 °C 40V<br>10<br>20V<br>60VV<br>100 °C<br>8<br>10 6<br>150°C<br>4<br>2<br>1 0<br>0.1 1 10 100 1000 0 20 40 60<br>t  AV [µs] Q  gate [nC] [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V  7G"9HH#4R" T  V ); I  9 =1mA<br>90<br>V =H<br>85 Q g<br>80<br>75<br>V S _"`T#<br>70<br>65<br>Q S"`T# Q  _c Q gate<br>60 Q  S_ Q  SP<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [A]  [V]<br>I  AV V  GS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
12<br>40V<br>10<br>20V<br>60VV<br>8<br>6<br>4<br>2<br>0<br>0 20 40 60<br>Q  gate [nC] [nC]<br> [V]<br> GS<br>V<br>**----- End of picture text -----**<br>


**IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G** 

**PG-TO263-3 (D²-Pak)** 

**IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G** 

**PG-TO262-3 (I²-Pak)** 

**IPP057N08N3 G IPI057N08N3 G** 

## **IPB054N08N3 G** 

**==> picture [53 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
PG-TO220-3<br>**----- End of picture text -----**<br>


**IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G** 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved.** 

## Legal **Legal Disclaimer** Disclaimer 

The The information information given given in this in document this document shall in no shall event in be no regarded event be as a regarded guarantee as of a guarantee of conditions or characteristics. conditions or characteristics. With respect With respect to any to examples any examples or or hints hints given given herein, herein, any any typical typical values stated herein and/or values stated any information herein and/or regarding any information the application regarding the of application the device, of the Infineon device, Technologies hereby disclaims any Infineon and Technologies all warranties hereby and disclaims liabilities any and of all warranties any kind, and including liabilities of without any kind, limitation, warranties of noninfringement including without of limitation, intellectual warranties property of non-infringement rights of any third of intellectual party. property rights 

of any third party. 

For **Information** further information on technology, delivery terms and conditions and prices, please contact the nearest For further Infineon information Technologies on technology, Office delivery (www.infineon.com). terms and conditions and prices, please 

contact the nearest Infineon Technologies Office (www.infineon.com). 

Due **Warnings** to technical requirements, components may contain dangerous substances. For information on the Due to types technical in requirements, question, please components contact may contain the nearest dangerous Infineon substances. Technologies For information Office. The Infineon Technologies on the types in question, component please described contact the in nearest this Data Infineon Sheet Technologies may be Office. used in life-support devices or systems and/or Infineon Technologies automotive, components aviation may and be aerospace used in life-support applications devices or or systems systems only only with with the express written approval the express of written Infineon approval Technologies, of Infineon Technologies, if a failure if a of failure such of components such components can can reasonably be expected to cause reasonably the be failure expected of that to cause life-support, the failure of automotive, that life-support aviation device and or system aerospace or to affect device or system or to affect the the safety safety or or effectiveness effectiveness of that of device that device or system. or system. Life support Life devices support or systems devices are or systems are intended to be implanted intended to be in implanted the human in the body human or body to support or to support and/or and/or maintain maintain and and sustain sustain and/or protect human life. If they and/or fail, protect it is human reasonable life. If they to assume fail, it is reasonable that the health to assume of the that user the health or other of the persons user may be endangered. 

or other persons may be endangered. 



## Links

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---

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