# Power MOSFET, N Channel, 60 V, 80 A, 5700 µohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1775624/)

**URL**: https://novapart.co/products/IPP057N06N3GXKSA1/power-mosfet-n-channel-60-v-80-a-5700-ohm-to-220
**SKU**: IPP057N06N3GXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.1800
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0047oh; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS |
| Qualification | - |
| Power Dissipation | 115W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 5700µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1775624/)

## Ie\Q ~~Cin~~ fir 

## **IPB054N06N3 G IPP057N06N3 G** 

## "%&$!"# **[™] 3 Power-Transistor** 

## **Features** 

for DC/DC converters x _R_ 9H"[Z# product (FO 

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|**Maximum ratings,**|**Maximum ratings,**|at|V|=25 °C, unless|unless otherwise|otherwise|otherwise|otherwise specified|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Parameter**|||||**Symbol **|||**Conditions**|||**Value**|**Unit**|
||||||_I_9|||_T_8<br>*#|||0(|6|
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+# ,# 

## **IPB054N06N3 G IPP057N06N3 G** 

|**IPB054N06N3 G IPP057N06N3 G**<br>om re<br>Cinfineon|**IPB054N06N3 G IPP057N06N3 G**<br>om re<br>Cinfineon|**IPB054N06N3 G IPP057N06N3 G**<br>om re<br>Cinfineon|**IPB054N06N3 G IPP057N06N3 G**<br>om re<br>Cinfineon|**IPB054N06N3 G IPP057N06N3 G**<br>om re<br>Cinfineon|**IPB054N06N3 G IPP057N06N3 G**<br>om re<br>Cinfineon|**IPB054N06N3 G IPP057N06N3 G**<br>om re<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Thermal characteristics**|||||||
|Thermalresistance,|_R_T@8|~~minimalfootprint~~|%<br>~~ff]~~|%<br>~~ff]~~|)&+<br>~~ff]2|~~|A'K|
|Thermal resistance,|_R_T@6|~~minimalfootprint~~|<br>~~ff]~~|<br>~~ff]~~|~~ff]2|~~||
|||-#<br>~~minimal footprint~~|%<br>~~ff]~~|%<br>~~ff]~~|,(<br>~~ff] 2 |~~||
|**Electrical characteristics,**<br>V<br>at<br>=25 °C, unless otherwise specified|||||||
|**Static characteristics**<br>~~Drain-sourcebreakdownvoltage~~<br>~~P|~~<br>~~=0V,=1mAPf~~|||||||
|~~Drain-sourcebreakdownvoltage~~|_V_"7G#9HH <br>~~P|~~|_V_=H<br>_I_9<br>~~P|~~<br>~~=0V,=1mA~~|.(<br>~~Pf~~|%<br>~~Pf~~|%|J|
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|Zero<br>gate<br>voltage<br>drai<br>t<br>ero gate voltage<br>drain curren<br>~~Gate-sourceleakagecurrent~~<br>~~po~~|_I_9HH<br>~~po~~|_V_9H<br>_V_=H<br>_T_V<br>ov,<br>=ON<br>=25 °C|%|(&)|)|s6|
|||_V_9H<br>_V_=H<br>_T_V<br>=60 V,<br>=0V,<br>=125 °C<br>~~=20V,~~<br>~~=0V Pf~~|%<br>~~Pf~~|)(<br>~~Pf~~|)((<br>~~Pf~~||
|~~Gate-sourceleakagecurrent~~<br>~~po~~|_I_=HH<br>~~po~~|_V_=H<br>_V_9H<br>~~=20V,~~<br>~~=0V Pf~~|%<br>~~Pf~~|)<br>~~Pf~~|)((<br>~~Pf~~|Z6|
|~~Gate-source leakage current~~<br>~~po~~<br>Drain-source on-state resistance|_R_9H"[Z#<br>~~po~~|_V_=H<br>_I_9<br>~~=20 V,~~<br>~~=0V Pf~~<br>=10V,<br>=80A|%<br>~~Pf~~<br> ~~Pf]~~|,&/<br>~~Pf~~<br>~~Pf]~~|-&/<br>~~Pf~~<br>~~Pf]~~|Y"|
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|-#<br>Device on 40 mm x40 mm x 1.5 mm epoxy PCB FR4 with6c<br>(one layer, 70 um thick) copper area for drain<br>connection. PCB is vertical in still air.|||||||



-# 

## **IPB054N06N3 G IPP057N06N3 G** 

|**IPB054N06N3 G IPP057N06N3 G**<br>om re<br>Cinfineon|**IPB054N06N3 G IPP057N06N3 G**<br>om re<br>Cinfineon|**IPB054N06N3 G IPP057N06N3 G**<br>om re<br>Cinfineon|**IPB054N06N3 G IPP057N06N3 G**<br>om re<br>Cinfineon|**IPB054N06N3 G IPP057N06N3 G**<br>om re<br>Cinfineon|**IPB054N06N3 G IPP057N06N3 G**<br>om re<br>Cinfineon|**IPB054N06N3 G IPP057N06N3 G**<br>om re<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics**|||||||
||_C_U__|_V_=H<br>_V_9H<br>_f_<br>" J<br>=0V,<br>=30 V,<br>~~P|~~|%|-(((|..((|\<|
|j<br>~~Reversetransfercapacitance~~|_C_[__<br>~~P|~~||%<br>~~Pf]~~|))((<br>~~Pf]~~|)-((<br>~~Pf]~~||
|~~Reversetransfercapacitance~~|_C_^__<br>~~P|~~||%<br>~~Pf]~~|+0<br>~~Pf]~~|%<br>~~Pf]~~||
|~~Reverse transfer capacitance~~|_t_P"[Z#<br>~~P|~~|_V_99<br>_V_=H<br>_I_9<br>_R_=<br>"<br>~~P|~~|%<br>~~Pf]~~|*,<br>~~Pf]~~|%<br>~~Pf]~~|Z_|
||_t_^||%|.0|%||
||_t_P"[RR#||%|+*|%||
||_t_R||%|1|%||
|#<br>Gate Char e Characteristics|||||||
||_Q_S_|_V_99<br>_I_9<br>_V_=H<br>=0 to 10V|%|*0|%|Z8|
||_Q_SP||%|.|%||
|witching charge|_Q__c||%|)1|%||
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||_V_\XMQMa||%|-&.|%|J|
||_Q_[__|_V_99<br>_V_=H|%|-(|..|Z8|
|**Reverse Diode**<br>~~Diodecontinousforwardcurrent~~<br>~~P|~~<br>~~Pf]~~|||||||
|~~Diodecontinousforwardcurrent~~|_I_H<br>~~P|~~|_T_8<br>~~P|~~<br>=25 °C|%<br>~~Pf]~~|%<br>~~Pf]~~|0(<br>~~Pf]~~|6|
|~~Diode continous forward current~~|_I_H$\aX_Q<br>~~P|~~||%<br>~~Pf]~~|%<br>~~Pf]~~|+*(<br>~~Pf]~~||
|Diode forward<br>volt<br>iode forward<br>voltage|_V_H9|_V_=H<br>_I_<<br>_T_V<br>HOM<br>=80A,<br>=25 °C|%|)&(|)&*|J|
||_t_^^|_V_G<br>P_i_<'P_t_|%|-*|%|Z_|
||_Q_^^||%|-1|%|Z8|
|.#<br>See figure 16 for gate charge parameter definition|||||||



.# 

**IPB054N06N3 G IPP057N06N3 G** 

## **1 Power dissipation** 

_P_ `[`4R" _T_ 8# 

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**----- Start of picture text -----**<br>
120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 50 100 150 200<br>T  C [°C]<br>3 Safe operating area<br>4R" V  9H yy T  8 -=25 °C; D  4(<br>parameter: t  \<br>10 [3]<br>limited by on-state<br>^Q_U_`MZOQ 1 us<br>10 us<br>10 [2]<br>100 us<br>1ms<br>10 ms<br>10 [1]<br>98<br>10 [0]<br>10 [-1]<br>10 [-1] 10 [0] 10 [1] 10 [2]<br>V  DS [V]<br> [W]<br> tot<br>P<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

**==> picture [107 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
I  94R" V  9H yy T  8 -=25 °C; D  4(<br>**----- End of picture text -----**<br>


## **2 Drain current** 

_I_ 94R" _T_ 8 ); _V_ =H" 

**==> picture [202 x 244] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>80<br>60<br>40<br>20<br>0<br>0 50 100 150 200<br>T  C [°C]<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **4 Max. transient thermal impedance** 

_Z_ `T@84R" _t_ \# 

**==> picture [29 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
D  4 t  \' T<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [1]<br>10 [0]<br>(&-<br>(&*<br>(&)<br>(&(-<br>10 [-1] (&(*<br>7.<br>(&()<br>7<br>single pulse<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t  p [s]<br> [K/W]<br> thJC<br>Z<br>**----- End of picture text -----**<br>


**IPB054N06N3 G IPP057N06N3 G** 

## **5 Typ. output characteristics** 

_I_ 94R" _V_ 9H ); _T_ V 

**==> picture [18 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
V  =H<br>**----- End of picture text -----**<br>


## **6 Typ. drain-source on resistance** 

**==> picture [64 x 26] intentionally omitted <==**

**----- Start of picture text -----**<br>
R  9H"[Z#4R" I  9 ); T  V<br>parameter: V  =H<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
320 15<br>10V_8V 14<br>280 13 5V 55V 6V 6.5V 7V<br>7V 12<br>240<br>11<br>10<br>200<br>6.5V G 9<br>8<br>160<br>7<br>6V 6 8V<br>120<br>5 10V<br>80 ! 4<br>5.5 V<br>3<br>40 5V 2<br>1<br>45V<br>0 0<br>0 1 2 3 4 5 0 80 160 240 320<br>V  DS [V] I  D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>4R" V  =H ys | 9H [[g5*g]] [[I]] 9 [[g]] [[R]] 9H"[Z#YMd g  R_4R" I  9 yy T  V =25°C<br>parameter: T  V<br>200 140<br>180<br>120<br>160<br>140 100<br>120<br>80<br>100<br>60<br>80<br>60 40<br>40<br>20<br>20<br>0 0 eae<br>0 2 4 6 8 0 50 100 150<br>V  GS [V] I  D [A]<br>]<br>[m<br> [A]<br>I  D<br> DS(on)<br>R<br> [A]  [S]<br>I  D g  fs<br>**----- End of picture text -----**<br>


## **7 Typ. transfer characteristics** 

_I_ 94R" _V_ =H ys | 9H[[g5*g]] _[[I]]_ 9[[g]] _[[R]]_ 9H"[Z#YMd 

**IPB054N06N3 G IPP057N06N3 G** 

## **9 Drain-source on-state resistance** 

_R_ 9H"[Z#4R" _T_ V ); _I_ 9 =80A; _V_ =H 

## **10 Typ. gate threshold voltage** 

_V_ =H"`T#4R" _T_ V ); _V_ =H4 _V_ 9H 

**==> picture [9 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
I  9<br>**----- End of picture text -----**<br>


**==> picture [421 x 246] intentionally omitted <==**

**----- Start of picture text -----**<br>
12 5<br>10<br>4<br>8<br>a 3 580 LA<br>YMd<br>6 58 yA<br>`e\<br>2<br>4<br>1<br>2<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T  j [°C] T  j [°C]<br>]<br>[m  [V]<br> DS(on) V  GS(th)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

_C_ 4R" _V_ 9H ): _V_ =H =0V; _f_ =1 " J 

## **12 Forward characteristics of reverse diode** 

_I_ <4R" _V_ H9# 

**==> picture [9 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br> V<br>**----- End of picture text -----**<br>


**==> picture [419 x 245] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [4] 10 [3]<br>8U__<br>8[__<br>10 [3]<br>10 [2] MO25 °C 175 °C, max<br>175°C<br>10 [2] 25 °C, max<br>8^__<br>10 [1]<br>10 [1]<br>10 [0]<br>0 20 40 60 0 0.5 1 1.5 2<br>V  DS [V] V  SD [V]<br>[pF]  [A]<br>C I  F<br>**----- End of picture text -----**<br>


## **IPB054N06N3 G IPP057N06N3 G** 

## **13 Avalanche characteristics** 

**==> picture [212 x 598] intentionally omitted <==**

**----- Start of picture text -----**<br>
I  6H4R" t  6J ); R  =H =25 "<br>parameter: T  V"_`M^`#<br>100<br>150°C 100°C) | | 25°C<br>10<br>1<br>0.1 1 10 100 1000<br>t  AV [µs]<br>15 Drain-source breakdown voltage<br>V  7G"9HH#4R" T  V ); I  9 =1mA<br>70<br>65<br>60<br>55<br>50<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [A]<br>I  AS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


## **14 Typ. gate charge** 

**==> picture [208 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
V  =H4R" Q  SM`Q ); I  9 =80A pulsed<br>parameter: V  99<br>12<br>30V<br>10<br>48V<br>8<br>6<br>4<br>2<br>0<br>0 20 40 60 80<br>Q  gate [nC]<br> [V]<br> GS<br>V<br>**----- End of picture text -----**<br>


**16 Gate charge waveforms** 

**==> picture [187 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
V =H<br>Q g<br>V S _"`T#<br>Q S"`T# Q  _c Q gate<br>Q  S_ Q  SP<br>**----- End of picture text -----**<br>


**IPB054N06N3 G IPP057N06N3 G** 

**PG-TO220-3** 

**IPB054N06N3 G IPP057N06N3 G** 

**PG-TO263 (D²-Pak)** 

**IPB054N06N3 G IPP057N06N3 G** 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** Legal Disclaimer 

The The information information given given in this in this document document shall in shall no event in no be event regarded be regarded as a guarantee as a of guarantee of conditions or characteristics. conditions or characteristics. With respect With to respect any examples to any examples or hints or hints given given herein, herein, any any typical typical values stated herein and/or values stated any information herein and/or regarding any information the application regarding the of the application device, of Infineon the device, Technologies hereby disclaims any Infineon and Technologies all warranties hereby and disclaims liabilities any and of any all warranties kind, including and liabilities without of any limitation, kind, warranties of noninfringement including without of intellectual limitation, warranties property of rights non-infringement of any third of party. intellectual property rights of any third party. 

For **Information** further information on technology, delivery terms and conditions and prices, please contact the nearest For further Infineon information Technologies on technology, Office delivery (www.infineon.com). terms and conditions and prices, please 

contact the nearest Infineon Technologies Office (www.infineon.com). 

Due **Warnings** to technical requirements, components may contain dangerous substances. For information on the Due to types technical in question, requirements, please components contact may the contain nearest dangerous Infineon substances. Technologies For information Office. The Infineon Technologies on the types in question, component please described contact the in this nearest Data Infineon Sheet Technologies may be used Office. in life-support devices or systems and/or Infineon automotive, Technologies components aviation and may aerospace be used in life-support applications devices or systems or systems only only with with the express written approval the express of written Infineon approval Technologies, of Infineon Technologies, if a failure of if a such failure components of such components can reasonably can be expected to cause reasonably the be failure expected of that to cause life-support, the failure automotive, of that life-support aviation device and aerospace or system or device to affect or system or to affect the the safety safety or or effectiveness effectiveness of that of that device device or system. or system. Life support Life support devices devices or systems or systems are are intended to be implanted intended to in be the implanted human in body the human or to body support or to and/or support maintain and/or maintain and sustain and sustain and/or protect human life. If they and/or fail, protect it is reasonable human life. If to they assume fail, it that is reasonable the health to assume of the user that or the other health persons of the user may be endangered. 

or other persons may be endangered. 



## Links

- [View this product on Novapart](https://novapart.co/products/IPP057N06N3GXKSA1/power-mosfet-n-channel-60-v-80-a-5700-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipp057n06n3gxksa1/mosfet-n-ch-80a-60v-pg-to220-3/dp/1775624)
---

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