# Power MOSFET, N Channel, 30 V, 50 A, 5500 µohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1775623/)

**URL**: https://novapart.co/products/IPP055N03LGXKSA1/power-mosfet-n-channel-30-v-50-a-5500-ohm-to-220
**SKU**: IPP055N03LGXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9830
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0046oh; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 3 |
| Qualification | - |
| Power Dissipation | 68W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 50A |
| Drain Source On State Resistance | 5500µohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1775623/)

**IPP055N03L G IPB055N03L G** 

## o. Type ~~Ci~~ nfineon 

## !"#$%!& **[™] 3 Power-Transistor** 

## **Features** 

- Fast switching MOSFET for SMPS 

- Optimized technology for DC/DC converters 

## **Product Summary** 

|**Product Summary**|**Product Summary**|**Product Summary**|
|---|---|---|
||||
|_V_DS|30|V|
||||
|_R_DS(on),max|5.5|mW|
||||
|_I_D|50|A|



- Qualified according to JEDEC[1)] for target applications 

- N-channel, logic level 

- Excellent gate charge x _R_ DS(on) product (FOM) 

- Very low on-resistance _R_ DS(on) 

- Avalanche rated 

- Pb-free plating; RoHS compliant 

• Halogen-free according to IEC61249-2-21 

**==> picture [227 x 106] intentionally omitted <==**

**----- Start of picture text -----**<br>
Type IPP055N03L G IPB055N03L G<br>: °<br>S&S 7<br>Package PG-TO220-3-1 PG-TO263-3<br>Marking 055N03L 055N03L<br>**----- End of picture text -----**<br>


**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified 

|**Parameter**|**Symbol **|**Conditions**|**Value**|**Unit**|
|---|---|---|---|---|
|Continuous drain current|_I_D|_V_GS=10 V,_T_C=25 °C|50|A|
|||_V_GS=10 V,_T_C=100 °C|50||
|||_V_GS=4.5 V,_T_C=25 °C|50||
|||_V_GS=4.5 V,<br>_T_C=100 °C|50||
|Pulsed drain current2)|_I_D,pulse|_T_C=25 °C|350||
|Avalanche current, single pulse3)|_I_AS|_T_C=25 °C|50||
|Avalanche energy, single pulse|_E_AS|_I_D=35 A,_R_GS=25W|60|mJ|
|||_I_D=50 A,_V_DS=24 V,|||
|Reverse diode d_v_/d_t_|d_v_/d_t_|d_i_/d_t_=200 A/µs,|6|kV/µs|
|||_T_j,max=175 °C|||
|Gate source voltage|_V_GS||±20|V|



1) J-STD20 and JESD22 

Rev. 1.03 

page 1 

2009-09-22 

**IPP055N03L G IPB055N03L G** 

**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified 

||**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|---|
||Power dissipation|_P_tot|_T_C=25 °C||68||W|
||Operating and storage temperature|_T_j,_T_stg||-55 ... 175|||°C|
||IEC climatic category; DIN IEC 68-1|||55/175/56||||
|**Parameter**<br>~~ee~~||**Symbol Conditions**<br>~~ee~~||**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~||||



**Thermal characteristics** 

Thermal resistance, junction - case _R_ thJC - - 2.2 K/W SMD version, device on PCB _R_ thJA minimal footprint - - 62 6 cm² cooling area[4)] - - 40 ~~oe~~ 

## **Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified 

## **Static characteristics** 

|Drain-source breakdown voltage|_V_(BR)DSS|_V_GS=0 V,_I_D=1 mA|30|-|-|V|
|---|---|---|---|---|---|---|
|Gate threshold voltage|_V_GS(th)|_V_DS=_V_GS,_I_D=250 µA|1|-|2.2||
|Zero gate voltage drain current|_I_DSS|_V_DS=30 V,_V_GS=0 V,<br>_T_j=25 °C|-|0.1|1|µA|
|||_V_DS=30 V,_V_GS=0 V,<br>_T_j=125 °C|-|10|100||
|Gate-source leakage current|_I_GSS|_V_GS=20 V,_V_DS=0 V|-|10|100|nA|
|Drain-source on-state resistance5)|_R_DS(on)|_V_GS=4.5 V,_I_D=30 A|-|6.2|7.8|mW|
|||_V_GS=10 V,_I_D=30 A|-|4.6|5.5||
|Gate resistance|_R_G||-|1.5|-|W|
|Transconductance|_g_fs||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=30 A|38|75|-|S|



- 2) See figure 3 for more detailed information 

- 3) See figure 13 for more detailed information 

- 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

- 5) Measured from drain tab to source pin 

Rev. 1.03 

page 2 

2009-09-22 

|**IPP055N03L G**<br>**IPB055N03L G**<br>~~Cnfineon~~|**IPP055N03L G**<br>**IPB055N03L G**<br>~~Cnfineon~~|**IPP055N03L G**<br>**IPB055N03L G**<br>~~Cnfineon~~|**IPP055N03L G**<br>**IPB055N03L G**<br>~~Cnfineon~~|**IPP055N03L G**<br>**IPB055N03L G**<br>~~Cnfineon~~|**IPP055N03L G**<br>**IPB055N03L G**<br>~~Cnfineon~~|**IPP055N03L G**<br>**IPB055N03L G**<br>~~Cnfineon~~|
|---|---|---|---|---|---|---|
|~~Cnfineonee~~<br>~~ee eee~~|||||||
|**Parameter**<br>~~ee~~|**Symbol **<br>~~ee~~|**Conditions**<br>~~ee~~<br>~~ee eee~~|**Values**<br>~~ee~~<br>~~eee~~|||**Unit**<br>~~ee~~<br>~~eee~~|
||||**min.**<br>~~ee~~<br>~~eee~~|**typ.**<br>~~ee~~<br>~~eee~~|**max.**<br>~~ee~~<br>~~eee~~||
|**Dynamic characteristics**<br>~~ee~~<br>~~ee eee~~|||||||
|Input capacitance|_C_iss|_V_GS=0 V,_V_DS=15 V,<br>_f_=1 MHz|-|2400|3200|pF|
|Output capacitance|_C_oss||-|920|1200||
|Reverse transfer capacitance|Crss||-|49|-||
|Turn-on delay time|_t_d(on)|_V_DD=15 V,_V_GS=10 V,<br>_I_D=30 A,_R_G=1.6W|-|6.7|-|ns|
|Rise time|_t_r||-|5.2|-||
|Turn-off delay time|_t_d(off)||-|25|-||
|Fall time|_t_f||-|4.0|-||
|Gate Charge Characteristics5)|||||||
|Gate to source charge|_Q_gs<br>~~—~~<br>~~ste~~|_V_DD=15 V,_I_D=30 A,<br>_V_GS=0 to 4.5 V<br>~~ste~~<br>~~ef~~<br>~~ft~~|-<br>~~ft~~<br>~~ste~~|7.5<br>~~ft~~<br>~~ste~~|-<br>~~ft~~<br>~~ste~~|nC|
|Gate charge at threshold|_Q_g(th)<br>~~—~~<br>~~ste~~||-<br>~~ft~~<br>~~ste~~|3.8<br>~~ft~~<br>~~ste~~|-<br>~~ft~~<br>~~ste~~||
|Gate to drain charge|_Q_gd<br>~~ste~~||-<br>~~ste~~|3.5<br>~~ste~~|-<br>~~ste~~||
|Switching charge|_Q_sw<br>~~ste~~||-<br>~~ste~~|7.1<br>~~ste~~|-<br>~~ste~~||
|Gate charge total|_Q_g<br>~~ste~~<br>~~=~~||-<br>~~ste~~<br>~~Tt~~|15<br>~~ste~~<br>~~Tt~~|-<br>~~ste~~<br>~~Tt~~||
|Gate plateau voltage|_V_plateau<br>~~ste~~<br>~~=~~<br>~~ef~~||-<br>~~ste~~<br>~~Tt~~<br>~~ft~~|3.1<br>~~ste~~<br>~~Tt~~<br>~~ft~~|-<br>~~ste~~<br>~~Tt~~|V|
|Gate charge total|_Q_g<br>~~ef~~<br>~~ff~~|_V_DD=15 V,_I_D=30 A,<br>_V_GS=0 to 10 V<br>~~ef~~<br>~~ft~~<br>~~ff~~|-<br>~~ft~~<br>~~fftf~~|31<br>~~ft~~<br>~~tf~~|-<br>~~tf~~||
|Gate charge total, sync. FET|_Q_g(sync)<br>~~ef~~<br>~~ff~~|_V_DS=0.1 V,<br>_V_GS=0 to 4.5 V<br>~~ef~~<br>~~ft~~<br>~~ff~~|-<br>~~ft~~<br>~~fftf~~|13<br>~~ft~~<br>~~tf~~|-<br>~~tf~~|nC|
|Output charge|_Q_oss<br>~~ff~~<br>~~ee~~|_V_DD=15 V,_V_GS=0 V<br>~~ff~~<br>~~ee~~|-<br>~~ff tf~~<br>~~ee~~|24<br>~~tf~~<br>~~ee~~|-<br>~~tf~~<br>~~ee~~||
|**Reverse Diode**|||||||
|Diode continuous forward current|_I_S|_T_C=25 °C|-|-|50|A|
|Diode pulse current|_I_S,pulse||-|-|350||
|Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=30 A,<br>_T_j=25 °C|-|0.88|1.1|V|
|Reverse recovery charge|_Q_rr|_V_R=15 V,_I_F=_I_S,<br>d_i_F/d_t_=400 A/µs|-|-|20|nC|
|6)See figure 16 for gate charge parameter definition|||||||



6) See figure 16 for gate charge parameter definition 

Rev. 1.03 

page 3 

2009-09-22 

**IPP055N03L G IPB055N03L G** 

**==> picture [428 x 613] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 Power dissipation 2 Drain current<br>P  tot=f( T  C) I  D=f( T  C);  V  GS ! 10 V<br>80 60<br>50<br>60<br>40<br>40 30<br>20<br>20<br>10<br>0 A 0<br>0 50 100 150 200 0 50 100 150 200<br>T  C [°C] T  C [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>I  D=f( V  DS);  T  C=25 °C; D  =0 Z  thJC=f( t  p)<br>parameter:  t  p parameter:  D  = t  p/ T<br>10 [3] 10<br>limited by on-state<br>resistance<br>1  µs<br>10 µs<br>10 [2]<br>100 µs 1 0.5<br>DC<br>0.2<br>10 [1]<br>0.1<br>1 ms<br>0.05<br>10 ms<br>0.1 0.02<br>10 [0] 0.01<br>single pulsegle pulsele pulsepulseulse<br>10 [-1] 0.01 0 0 0 0 0 0 1<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [[-6]] 10 [[-5]] 10 [[-4]] 10 [[-3]] 10 [[-2]] 10 [[-1]] 10<br>V  DS [V] t  [s]<br> [W]  [A]<br>P  tot I  D<br> [A]  [K/W]<br>I  D<br> thJC<br>Z<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10<br>0.5<br>1<br>0.2<br>0.1<br>0.05<br>0.1 0.02<br>0.01<br>single pulsegle pulsele pulsepulseulse<br>0.01 0 0 0 0 0 0 1<br>10 [[-6]] 10 [[-5]] 10 [[-4]] 10 [[-3]] 10 [[-2]] 10 [[-1]] 10 [0]<br>t  p [s]<br> [K/W]<br> thJC<br>Z<br>**----- End of picture text -----**<br>


Rev. 1.03 

page 4 

2009-09-22 

**IPP055N03L G IPB055N03L G** 

## **5 Typ. output characteristics** 

## **6 Typ. drain-source on resistance** 

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**----- Start of picture text -----**<br>
I  D=f( V  DS);  T  j=25 °C R  DS(on)=f( I  D);  T  j=25 °C<br>parameter:  V  GS parameter:  V  GS<br>160 20<br>5 V<br>10 V 3 V<br>3.2 V<br>4.5 V<br>16<br>3.5 V<br>120<br>4 V<br>12<br>80 4 V<br>8<br>3.5 V<br>4.5 V<br>5 V<br>40 10 V<br>3.2 V 4 11.5 V<br>3 V<br>2.8 V<br>0 [= 0<br>0 1 2 3 0 20 40 60 80 100<br>V  DS [V] I  D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>I  D=f( V  GS); | V  DS|>2| I  D| R  DS(on)max g  fs=f( I  D);  T  j=25 °C<br>parameter:  T  j<br>160 160<br>120 120<br>80 80<br>40 40<br>175 °C<br>25 °C<br>0 0<br>0 1 2 3 4 5 0 20 40 60 80 100<br>V  GS [V] I  D [A]<br>]<br>W<br>[m<br> [A]<br>I  D<br> DS(on)<br>R<br> [A]  [S]<br>I  D g  fs<br>**----- End of picture text -----**<br>


Rev. 1.03 

2009-09-22 

page 5 

**IPP055N03L G IPB055N03L G** 

## **9 Drain-source on-state resistance** 

_R_ DS(on)=f( _T_ j); _I_ D=30 A; _V_ GS=10 V 

## **10 Typ. gate threshold voltage** 

_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=250 µA 

**==> picture [421 x 585] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 2.5<br>8 2<br>6 98 % 1.5<br>typ<br>4 1<br>2 0.5<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T  j [°C] T  j [°C] [°C]<br>11 Typ. capacitances 12 Forward characteristics of reverse diode<br> =f( V  DS););  V  GS=0 V;=0 V;  f  =1 MHz I  F=f( V  SD)<br>parameter:  T  j<br>10 [4] 10000 1000<br>25 °C<br>Ciss 25 °C, 98%<br>Coss<br>10 [3] 1000 2 100 ee<br>175 °C, 98%<br>175 °C<br>10 [2] 100 10<br>Crss<br>10 [1] 10 Ml 1 lf<br>0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0<br>V  DS [V] V  SD [V]<br>page 6<br>] W<br>[m  [V]<br>R  DS(on) V  GS(th)<br>[pF]  [A]<br>C I  F<br>**----- End of picture text -----**<br>


**==> picture [204 x 244] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C] [°C]<br> [V]<br> GS(th)<br>V<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

_C_ =f( _V_ DS);); _V_ GS=0 V;=0 V; _f_ =1 MHz 

Rev. 1.03 

2009-09-22 

**IPP055N03L G IPB055N03L G** 

## **13 Avalanche characteristics** 

## **14 Typ. gate charge** 

_V_ GS=f(=f( _Q_ gate);); _I_ D=30 A pulsed=30 A pulsed parameter: _V_ DD 

**==> picture [489 x 647] intentionally omitted <==**

**----- Start of picture text -----**<br>
I  AS=f( t  AV);  R  GS=25 W V  GS=f(=f( Q  gate););  I  D=30 A pulsed=30 A pulsed<br>parameter:  T  j(start) parameter:  V  DD<br>100 12<br>15 V<br>6 V<br>10<br>24 V<br>25 °C<br>8<br>100 °C<br>150 °C<br>10 6<br>4<br>2<br>1 NZ 0<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40<br>t  AV [µs] Q  gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V  BR(DSS)=f( T  j);  I  D=1 mA<br>34<br>V GS<br>32 Q g<br>30<br>28<br>26<br>V gs(th)<br>24<br>22 Q g(th) Q sw Q gate<br>20 Q  gs Q  g d<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br>Rev. 1.03 page 7 2009-09-22<br>ii at<br> [A]  [V]<br>I  AV V  GS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


**IPP055N03L G IPB055N03L G** 

**==> picture [242 x 338] intentionally omitted <==**

**----- Start of picture text -----**<br>
Package Outline PG-TO220-3-1<br>L10 355m BlA@<br>, --L- -<br>1<br>f . NS<br>I /\ oO<br>= ; |<br>| | |<br>= | |<br>=) | | |<br>| |<br>TT |<br>— <3<br>|<br>!<br>!<br>E<br>a = i b Cc in<br>Footprint: Packaging:<br>**----- End of picture text -----**<br>


Rev. 1.03 

page 8 

2009-09-22 

**IPP055N03L G IPB055N03L G** 

**Package Outline PG-TO263-3** 

Rev. 1.03 

page 9 

2009-09-22 

**IPP055N03L G IPB055N03L G** 

## Information 

**5JCKNI>PFKJ** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). $' 

Due **=>NJFJDO** to technical requirements, components may contain dangerous substances. For information on 

Rev. 1.03 

page 10 

2009-09-22 



## Links

- [View this product on Novapart](https://novapart.co/products/IPP055N03LGXKSA1/power-mosfet-n-channel-30-v-50-a-5500-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipp055n03lgxksa1/mosfet-n-ch-50a-30v-pg-to220-3/dp/1775623)
---

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