# Power MOSFET, N Channel, 40 V, 80 A, 4100 µohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1775620/)

**URL**: https://novapart.co/products/IPP041N04NGXKSA1/power-mosfet-n-channel-40-v-80-a-4100-ohm-to-220
**SKU**: IPP041N04NGXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3760
**Stock**: 200+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 94W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 4100µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1775620/)

**IPP041N04N G IPB041N04N G** 

## o. Type ~~Ci~~ nfineon 

> **[™]** 

## !"#$%!& **3 Power-Transistor** 

## **Features** 

- Fast switching MOSFET for SMPS 

- Optimized technology for DC/DC converters 

## **Product Summary** 

|**Product Summary**|**Product Summary**|**Product Summary**|
|---|---|---|
||||
|_V_DS|40|V|
||||
|_R_DS(on),max|4.1|mW|
||||
|_I_D|80|A|



- Qualified according to JEDEC[1)] for target applications 

- N-channel, normal level 

- Excellent gate charge x _R_ DS(on) product (FOM) 

- Very low on-resistance _R_ DS(on) 

- 100% Avalanche tested 

- Pb-free plating; RoHS compliant 

- Halogen-free according to IEC61249-2-21 

**==> picture [253 x 110] intentionally omitted <==**

**----- Start of picture text -----**<br>
Type IPB041N04N G IPP041N04N G<br>? 2 (tab) iF<br>°<br>| ee<br>Package PG-TO263-3 PG-TO220-3<br>ee ee ee<br>Marking 041N04N 041N04N<br>**----- End of picture text -----**<br>


**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified 

|**Parameter**|**Symbol **|**Conditions**|**Value**|**Unit**|
|---|---|---|---|---|
|Continuous drain current|_I_D|_V_GS=10 V,_T_C=25 °C|80|A|
|||_V_GS=10 V,_T_C=100 °C|80||
|Pulsed drain current2)|_I_D,pulse|_T_C=25 °C|400||
|Avalanche current, single pulse3)|_I_AS|_T_C=25 °C|80||
|Avalanche energy, single pulse|_E_AS|_I_D=80 A,_R_GS=25W|60|mJ|
|Gate source voltage|_V_GS||±20|V|



1) J-STD20 and JESD22 

Rev. 1.2 

page 1 

2009-12-17 

**IPP041N04N G IPB041N04N G** 

**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified 

**Parameter Symbol Conditions Value Unit** Power dissipation _P_ tot _T_ C=25 °C 94 W Operating and storage temperature _T_ j, _T_ stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 **Parameter Symbol Conditions Values Unit min. typ. max.** ~~eeee~~ **Thermal characteristics** Thermal resistance, junction - case _R_ thJC - - 1.6 K/W SMD version, device on PCB _R_ thJA minimal footprint - - 62 6 cm² cooling area[4)] - - 40 ~~oe~~ 

**Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified 

## **Static characteristics** 

|Drain-source breakdown voltage|_V_(BR)DSS|_V_GS=0 V,_I_D=1 mA|40|-|-|V|
|---|---|---|---|---|---|---|
|Gate threshold voltage|_V_GS(th)|_V_DS=_V_GS,_I_D=45 µA|2|-|4||
|Zero gate voltage drain current|_I_DSS|_V_DS=40 V,_V_GS=0 V,<br>_T_j=25 °C|-|0.1|1|µA|
|||_V_DS=40 V,_V_GS=0 V,<br>_T_j=125 °C|-|10|100||
|Gate-source leakage current|_I_GSS|_V_GS=20 V,_V_DS=0 V|-|10|100|nA|
|Drain-source on-state resistance5)|_R_DS(on)|_V_GS=10 V,_I_D=80 A|-|3.3|4.1|mW|
|Gate resistance|_R_G||-|1.6|-|W|
|Transconductance|_g_fs||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=80 A|50|100|-|S|



- 2) See figure 3 for more detailed information 

- 3) See figure 13 for more detailed information 

- 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

- 5) Measured from drain tab to source pin 

Rev. 1.2 

page 2 

2009-12-17 

|**IPP041N04N G**<br>**IPB041N04N G**<br>~~Cnfinen~~|**IPP041N04N G**<br>**IPB041N04N G**<br>~~Cnfinen~~|**IPP041N04N G**<br>**IPB041N04N G**<br>~~Cnfinen~~|**IPP041N04N G**<br>**IPB041N04N G**<br>~~Cnfinen~~|**IPP041N04N G**<br>**IPB041N04N G**<br>~~Cnfinen~~|**IPP041N04N G**<br>**IPB041N04N G**<br>~~Cnfinen~~|**IPP041N04N G**<br>**IPB041N04N G**<br>~~Cnfinen~~|
|---|---|---|---|---|---|---|
|~~Cnfinenee~~<br>~~ee ee~~|||||||
|**Parameter**<br>~~ee~~|**Symbol **<br>~~ee~~|**Conditions**<br>~~ee~~<br>~~ee ee~~|**Values**<br>~~ee~~<br>~~ee~~|||**Unit**<br>~~ee~~<br>~~ee~~|
||||**min.**<br>~~ee~~<br>~~ee~~|**typ.**<br>~~ee~~<br>~~ee~~|**max.**<br>~~ee~~<br>~~ee~~||
|**Dynamic characteristics**<br>~~ee~~<br>~~ee ee~~|||||||
|Input capacitance|_C_iss|_V_GS=0 V,_V_DS=20 V,<br>_f_=1 MHz|-|3400|4500|pF|
|Output capacitance|_C_oss||-|980|1300||
|Reverse transfer capacitance|Crss||-|36|-||
|Turn-on delay time|_t_d(on)|_V_DD=20 V,_V_GS=10 V,<br>_I_D=30 A,_R_G=1.6W|-|16|-|ns|
|Rise time|_t_r||-|3.8|-||
|Turn-off delay time|_t_d(off)||-|23|-||
|Fall time|_t_f||-|4.8|-||
|Gate Charge Characteristics6)|||||||
|Gate to source charge|_Q_gs<br>~~iat~~|_V_DD=20 V,_I_D=30 A,<br>_V_GS=0 to 10 V<br>~~iat~~<br>~~ff~~|-<br>~~iat~~|18<br>~~iat~~|-<br>~~iat~~|nC|
|Gate charge at threshold|_Q_g(th)<br>~~iat~~||-<br>~~iat~~|10.3<br>~~iat~~|-<br>~~iat~~||
|Gate to drain charge|_Q_gd<br>~~iat~~<br>~~=~~||-<br>~~iat~~<br>~~Tt~~|5.3<br>~~iat~~<br>~~Tt~~|-<br>~~iat~~<br>~~Tt~~||
|Switching charge|_Q_sw<br>~~iat~~<br>~~=~~||-<br>~~iat~~<br>~~Tt~~|12.5<br>~~iat~~<br>~~Tt~~|-<br>~~iat~~<br>~~Tt~~||
|Gate charge total|_Q_g<br>~~iat~~<br>~~—~~||-<br>~~iat~~<br>~~ft~~|42<br>~~iat~~<br>~~ft~~|56<br>~~iat~~<br>~~ft~~||
|Gate plateau voltage|_V_plateau<br>~~iat~~<br>~~—~~<br>~~ff~~||-<br>~~iat~~<br>~~ft~~<br>~~fftf~~|5.1<br>~~iat~~<br>~~ft~~<br>~~tf~~|-<br>~~iat~~<br>~~ft~~<br>~~tf~~|V|
|Gate charge total, sync. FET|_Q_g(sync)<br>~~ff~~|_V_DS=0.1 V,<br>_V_GS=0 to 10 V<br>~~ff~~|-<br>~~fftf~~|40<br>~~tf~~|-<br>~~tf~~|nC|
|Output charge|_Q_oss<br>~~ff~~<br>~~re~~|_V_DD=20 V,_V_GS=0 V<br>~~ff~~<br>~~re~~|-<br>~~ff tf~~<br>~~re~~|41<br>~~tf~~<br>~~re~~|-<br>~~tf~~<br>~~re~~||
|**Reverse Diode**|||||||
|Diode continuous forward current|_I_S|_T_C=25 °C|-|-|78|A|
|Diode pulse current|_I_S,pulse||-|-|400||
|Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=80 A,<br>_T_j=25 °C|-|0.96|1.2|V|
|Reverse recovery charge|_Q_rr|_V_R=20 V,_I_F=_I_S,<br>d_i_F/d_t_=400 A/µs|-|46|-|nC|
|6)See figure 16 for gate charge parameter definition|||||||



6) See figure 16 for gate charge parameter definition 

Rev. 1.2 

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2009-12-17 

**IPP041N04N G IPB041N04N G** 

**==> picture [86 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 Power dissipation<br>**----- End of picture text -----**<br>


_P_ tot=f( _T_ C) 

## **2 Drain current** 

_I_ D=f( _T_ C); _V_ GS ! 10 V 

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**----- Start of picture text -----**<br>
100 100<br>80 80<br>60 60<br>40 40<br>20 20<br>0 AEA 0<br>0 50 100 150 200 0 50 100 150 200<br>T  C [°C] T  C [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>=f( V  DS););  T  C=25 °C;=25 °C; D  =0 Z  thJC=f( t  p)<br>parameter:  t  p parameter:  D  = t  p/ T<br>10 [3] 10 [1]<br>limited by on-state<br>resistance<br>1 µs<br>10 µs<br>10 [2]<br>100 µs<br>10 [0]<br>0.5<br>DC<br>1 ms<br>10 [1] 0.2<br>10 ms 0.1<br>10 [-1] 0.05<br>10 [0] 0.02<br>0.01<br>single pulse<br>10 [-1] 10 [-2]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V  DS [V] t  p [s]<br> [W]  [A]<br>P  tot I  D<br> [A]  [K/W]<br>I  D<br> thJC<br>Z<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

_I_ D=f( _V_ DS);); _T_ C=25 °C;=25 °C; _D_ =0 parameter: _t_ p 

Rev. 1.2 

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2009-12-17 

**IPP041N04N G IPB041N04N G** 

## **5 Typ. output characteristics** 

_I_ D=f( _V_ DS); _T_ j=25 °C parameter: _V_ GS 

## **6 Typ. drain-source on resistance** 

_R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS 

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**----- Start of picture text -----**<br>
300 8<br>10 V<br>| 7 fp 5.5 V<br>250 6 V<br>7 V 6.5 V<br>6<br>200<br>5<br>7 V<br>6.5 V<br>150 4<br>3 10 V<br>100 6 V<br>2<br>50 5.5 V<br>1<br>5 V<br>0 po— 0<br>0 1 2 3 0 40 80 120 160 200<br>V  DS [V] I  D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>=f( V  GS); |); | V  DS|>2||>2| I  D|| R  DS(on)max g  fs=f( I  D);  T  j=25 °C<br>parameter:  T  j<br>300 120<br>250 100<br>200 80<br>150 | 60<br>100 40<br>50 175 °C 20<br>25 °C<br>W<br>0 | / a 0<br>0 2 4 6 8 0 20 40 60 80 100<br>V  GS [V] I  D [A]<br>2009-12-17<br>]<br>W<br>[m<br> [A]<br>I  D<br> DS(on)<br>R<br> [A]  [S]<br>I  D g  fs<br>**----- End of picture text -----**<br>


**7 Typ. transfer characteristics** 

_I_ D=f( _V_ GS); |); | _V_ DS|>2||>2| _I_ D|| _R_ DS(on)max parameter: _T_ j 

Rev. 1.2 

page 5 

**IPP041N04N G IPB041N04N G** 

**9 Drain-source on-state resistance** 

_R_ DS(on)=f( _T_ j); _I_ D=80 A; _V_ GS=10 V 

## **10 Typ. gate threshold voltage** 

_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=250 mA 

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8 4<br>7<br>6 3<br>5<br>98 %<br>4 2<br>typ<br>3<br>2 1<br>1<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140<br>T  j [°C] T  j [°C] [°C]<br>11 Typ. capacitances 12 Forward characteristics of reverse diode<br> =f( V  DS););  V  GS=0 V;=0 V;  f  =1 MHz I  F=f( V  SD)<br>parameter:  T  j<br>10 [4] 1000<br>25 °C, 98%<br>Ciss<br>Coss<br>10 [3] 100 175 °C, 98%<br>25 °C<br>175 °C<br>10 [2] 10<br>Crss<br>10 [1] <— 1 | if<br>0 10 20 30 40 0 0.5 1 1.5 2<br>V  DS [V] V  SD [V]<br>page 6<br>] W<br>[m  [V]<br>R  DS(on) V  GS(th)<br>[pF]  [A]<br>C I  F<br>**----- End of picture text -----**<br>


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4<br>3<br>2<br>1<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C] [°C]<br> [V]<br> GS(th)<br>V<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

_C_ =f( _V_ DS);); _V_ GS=0 V;=0 V; _f_ =1 MHz 

Rev. 1.2 

2009-12-17 

**IPP041N04N G IPB041N04N G** 

## **13 Avalanche characteristics** 

_I_ AS=f( _t_ AV); _R_ GS=25 W parameter: _T_ j(start) 

## **14 Typ. gate charge** 

_V_ GS=f( _Q_ gate); _I_ D=30 A pulsed parameter: _V_ DD 

**==> picture [426 x 558] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 12<br>20 V<br>25 °C 10 8 V<br>100 °C 32 V<br>8<br>150 °C<br>10 6<br>4<br>2<br>1 0<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50<br>t  AV [µs] Q  gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V  BR(DSS)=f( T  j);  I  D=1 mA<br>45<br>V GS<br>Q g<br>40<br>35<br>30 V gs(th)<br>25<br>Q g(th) Q sw Q gate<br>20 Q  gs Q  g d<br>-60 ld -20 20 60 100 140 180<br>T  j [°C]<br> [A]  [V]<br>I  AV V  GS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Rev. 1.2 

2009-12-17 

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**IPP041N04N G** 

**IPB041N04N G** 

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**----- Start of picture text -----**<br>
Package Outline PG-TO220-3-1<br>:<br>|<br>oP<br>ESOC)<br>SL_| 1<br>i}<br>a | | |<br>foo<br>s| il} | |<br>| | |<br>Pot<br>= == SSEA<br>b2 br<br>Footprint: Packaging:<br>|<br>**----- End of picture text -----**<br>


Rev. 1.2 

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2009-12-17 

**IPP041N04N G IPB041N04N G** 

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**----- Start of picture text -----**<br>
Package Outline PG-TO263-3<br>**----- End of picture text -----**<br>


Rev. 1.2 

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**IPP041N04N G** 

**IPB041N04N G** 

$ 

'  ( 

## Legal Disclaimer 

## Information 

+,-.<=>B%., For $ further information on technology, delivery terms and conditions and prices, please contact the 

(www.infineon.com). 

## Warnings G><,%,1& 

Due & to technical requirements, components may contain dangerous substances. For information on 

Rev. 1.2 

page 10 

2009-12-17 



## Links

- [View this product on Novapart](https://novapart.co/products/IPP041N04NGXKSA1/power-mosfet-n-channel-40-v-80-a-4100-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipp041n04ngxksa1/mosfet-n-ch-80a-40v-pg-to220-3/dp/1775620)
---

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