# Power MOSFET, N Channel, 60 V, 90 A, 4000 µohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1775619/)

**URL**: https://novapart.co/products/IPP040N06N3GXKSA1/power-mosfet-n-channel-60-v-90-a-4000-ohm-to-220
**SKU**: IPP040N06N3GXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6310
**Stock**: 200+
**Lead Time**: 134 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 188W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 90A |
| Drain Source On State Resistance | 4000µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1775619/)

## Id\Q ~~Cin~~ fir 

## **IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G** 

## "%&$!"# **[™] 3 Power-Transistor Features** 

|Id\Q<br>**IPB037N06N3 G**<br>**IPI040N06N3 G**<br>**IPP040N06N3 G**<br>~~Cin~~fir|Id\Q<br>**IPB037N06N3 G**<br>**IPI040N06N3 G**<br>**IPP040N06N3 G**<br>~~Cin~~fir|Id\Q<br>**IPB037N06N3 G**<br>**IPI040N06N3 G**<br>**IPP040N06N3 G**<br>~~Cin~~fir|Id\Q<br>**IPB037N06N3 G**<br>**IPI040N06N3 G**<br>**IPP040N06N3 G**<br>~~Cin~~fir|Id\Q<br>**IPB037N06N3 G**<br>**IPI040N06N3 G**<br>**IPP040N06N3 G**<br>~~Cin~~fir|
|---|---|---|---|---|
|"%&$!"#!"#**[™]3 Power-Transistor**<br>**Features**<br>),<br>_R_9H"[Z#<br>_R_9H"[Z#<br>)#<br>**Maximum ratings,**<br>V<br>_V_9H<br>.(<br>J<br>_R_<br>+&/<br>Y"<br>_I_9<br>1(<br>6<br>**Product Summary**<br>**Type**<br>**Package**<br>E=%ID*.+%+<br>E=%ID*.*%+<br>E=%ID**(%+<br>**Marking**<br>(+/C(.C<br>(,(C(.C<br>(,(C(.C<br>?EE(,cC(.C<br>?E?(,cC(.C<br>?E7(,cC(.C<br>*forsync. rectification, drivesanddc/dcS<br>| somes =|<br>« Very low on-resistance<br>previous engineering<br>sample codes:<br>¢<br>-channel, normal level<br>« Avalanche rated<br>RoHS<br>*QualifiedaccordingtoJEDEC fortargetapplications<br>S/<br>* Pb-free plating; Ro S compliant<br>—<br>(%s,<br>Halogen-Free<br>* alogen-freeaccording toIEC61249-2-21<br>@<br>~~p~~ IPB037 06 3G<br>IPI040 06 3G<br>IPP040 06 3G<br>drain<br>pin 2<br>a<br>1<br>3<br>3<br>25<br>pin |<br>~~a~~<br>ee<br>at<br>=25 °C, unless otherwise specified|||||
|**Parameter**|**Symbol **|**Conditions**|**Unit**<br>**Value**|**Unit**|
||_I_9|_T_8<br>*#|1(<br>6<br>1(<br>+.(<br>~~Po~~|6|
|||_T_8|||
|~~Avalancheenergy,singlepulse~~|_I_9$\X^Q<br>~~a~~|_T_8<br>~~=90A,~~<br>~~=25Po~~|||
|~~Avalancheenergy,singlepulse~~|_E_6H<br>~~a~~|_I_9<br>_R_=H<br>"<br>~~=90A,~~<br>~~=25Po~~|).-<br>Y@<br>~~Po~~|Y@|
|~~Avalanche energy, single pulse ~~|_V_=H<br> ~~a ~~|~~=90 A,~~<br>~~=25 Po~~|p*(<br>J<br>~~Po~~|J|
||_P__[_|_T_8|)00<br>K|K|
|Operatingandstoragetemperature~~Pf~~|_T_V _T_^_S<br>~~Pf~~|~~Pf~~|-55 ... 175<br>°C|°C|
|IEC climaticcategory; DI<br>IEC68-1~~Pf~~|~~Pf~~|~~Pf~~|55/175/56||
|*#<br>_T@8<br>/<br>+#<br>,#<br>)#<br>J-STD20 and JESD22<br>Current is limited by bondwire; with an<br>=0.8<br>the chip is able to carry 162 A.<br>See fi<br>ure 3<br>Device on 40 mm x40 mm x 1.5 mm epoxy PCB FR4 with6c_<br>(one layer, 70<br>m thick) copper area for drain<br>connection. PCB is vertical in still air.|||||



## **IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G** 

|**Parameter**||||**Symbol **||**Conditions**|||**Values**|||**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||**min.**|**typ.**||**max.**||
|**Thermal characteristics**|||||||||||||
|||||_R__T@8||||%|%||(&0|A'K|
|Thermal resistance,||||_R__T@6||~~minimal footprint~~|,#|<br> <br>%<br>%<br>~~ff] ~~|||,(<br> ~~2 |~~||
|**Electrical characteristics,**|at|V|=25 °C, unless||otherwise specified||||||||



## **Static characteristics** 

|**Static characteristics**|**Static characteristics**||||||
|---|---|---|---|---|---|---|
|~~Drain-source breakdown voltage~~|||_V_"7G#9HH _V_=H<br>_I_9<br>_V_=H"_T#<br>_V_9H4_V_=H _I_9<br>~~P|~~<br>~~=0V, =1mA ~~||.(<br>%<br>%<br>*<br>+<br>,<br> ~~Pf]~~|J|
|Zero<br>gate<br>voltage<br>drai<br>ero gate voltage<br>drain curren|t||_I_9HH|_V_9H<br>_V_=H<br>_T_V<br>“60V,<br>=v,<br>=95 °C|%<br>(&)<br>)|r6|
|||||_V_9H<br>_V_=H<br>_T_V<br>=60 V,<br>=0 V,<br>=125 °C|%<br>)(<br>)((||
|~~Gate-source leakage current~~<br>Drain-source on-state resistance||_I_=HH<br>_R_9H"[Z#<br>~~po~~||_V_=H<br>_V_9H<br>_V_=H<br>_I_9<br>~~=20 V,~~<br>~~=0V Pf~~<br>=10V,<br>=90A|%<br>)<br>)((<br>%<br>+&+<br>,<br>~~Pf~~<br> ~~Pf]~~|Z6<br>Y"|
|||||_V_=H<br>_I_9<br>"HB9#|%<br>+&(<br>+&/||
||||_R_=||%<br>)&+<br>%|"|
|I]MZ^O[ZPO_MZOQ|||_g_R^|f_V_9Hf5*f_I_9f_R_9H"[Z#YMc<br>_I_9|.)<br>)*)<br>%|H|



## **IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G** 

|**IPB037N06N3 G**<br>**IPI040N06N3 G**<br>**IPP040N06N3 G**<br>om re<br>Cinfineon|**IPB037N06N3 G**<br>**IPI040N06N3 G**<br>**IPP040N06N3 G**<br>om re<br>Cinfineon|**IPB037N06N3 G**<br>**IPI040N06N3 G**<br>**IPP040N06N3 G**<br>om re<br>Cinfineon|**IPB037N06N3 G**<br>**IPI040N06N3 G**<br>**IPP040N06N3 G**<br>om re<br>Cinfineon|**IPB037N06N3 G**<br>**IPI040N06N3 G**<br>**IPP040N06N3 G**<br>om re<br>Cinfineon|**IPB037N06N3 G**<br>**IPI040N06N3 G**<br>**IPP040N06N3 G**<br>om re<br>Cinfineon|**IPB037N06N3 G**<br>**IPI040N06N3 G**<br>**IPP040N06N3 G**<br>om re<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics**|||||||
||_C_U^^|_V_=H<br>_V_9H<br>_f_<br>" I<br>=0V,<br>=30 V,|%|0(((|))(((|\<|
|;|_C_[^^||%|)/((|*+((||
|Reversetransfercapacitance|_C_]^^<br>~~a~~||%<br>~~Pf~~|-0<br>~~Pf~~|0/<br>~~Pf~~||
||_t_P"[Z#|_V_99<br>_V_=H<br>_I_9<br>_R_=<br>"|%|+(|%|Z^|
||_t_]||%|/(|%||
||_t_P"[RR#||%|,(|%||
||_t_R||%|-|%||
|#<br>Gate Char e Characteristics|||||||
||_Q_S^|_V_99<br>_I_9<br>_V_=H<br>=0 to 10V|%|,*|%|Z8|
||_Q_SP||%|1|%||
|witching charge|_Q_^b||%|*/|%||
||_Q_S||%|10|%||
||_V_\XM_QM||%|-&+|%|J|
||_Q_[^^|_V_99<br>_V_=H|%|/1|%|Z8|
|**Reverse Diode**<br>~~Diodecontinousforwardcurrent~~<br>~~||~~<br>~~Pf]~~|||||||
|~~Diodecontinousforwardcurrent~~<br>~~|~~|_I_H<br>~~||~~|_T_8<br>=25 °C|%<br>~~Pf]~~|%<br>~~Pf]~~|1(<br>~~Pf]~~|6|
|~~Diode continous forward current~~<br>~~|~~|_I_H$\X^Q<br>~~| |~~||%<br>~~Pf]~~|%<br>~~Pf]~~|+.(<br>~~Pf]~~||
|Diode<br>forward<br>volt<br>iode forward<br>voltage|_V_H9|_V_=H<br>_I_<<br>_T_V<br>OM,<br>804,<br>=25 °C|%|(&1/|)&*|J|
||_t_]]|_V_G<br>P_i_<'P_t_<br>B|%|)*-|%|Z^|
||_Q_]]||%|))(|%|Z8|
|-#<br>See figure 16 for gate charge parameter definition|||||||



-# 

**IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G** 

**==> picture [86 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 Power dissipation<br>**----- End of picture text -----**<br>


_P_ _[_4R" _T_ 8# 

## **2 Drain current** 

_I_ 94R" _T_ 8 ); _V_ =H" 

**==> picture [422 x 559] intentionally omitted <==**

**----- Start of picture text -----**<br>
200 100<br>160 80<br>120 60<br>80 40<br>40 20<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>T  C [°C] T  C [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>4R" V  9H yy T  8 -=25 °C; D  4( Z  _T@84R" t  \#<br>parameter: t  \ parameter: D  4 t  \' T<br>10 [3] 10 [0]<br>limited by on-state 1 B<br>]Q^U^_MZOQ<br>B (&-<br>10 [2] \ 10<br>100 B<br>10 ms (&*<br>1ms<br>98 (&)<br>10 [1] 10 [-1]<br>(&(-<br>yA<br>(&(*<br>(&()<br>single pulse<br>10 [0]<br>10 [-1] 10 [-2]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V  DS [V] t  p [s]<br> [W]  [A]<br>P  tot I  D<br> [A]  [K/W]<br>I  D<br> thJC<br>Z<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

_I_ 94R" _V_ 9H yy _T_ 8 -=25 °C; _D_ 4( 

**IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G** 

## **5 Typ. output characteristics** 

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**----- Start of picture text -----**<br>
I  94R" V  9H ); T  V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
parameter: V  =H<br>320<br>8V<br>Tv esv<br>240<br>6V<br>160<br>I!<br>5.5V<br>/<br>80<br>i 5V<br>45V<br>0<br>0 1 2 3 4 5<br>V  DS [V]<br>7 Typ. transfer characteristics<br>4R" V  =H ys | 9H [[f5*f]] [[I]] 9 [[f]] [[R]] 9H"[Z#YMc<br>parameter: T  V<br>320<br>240<br>160<br>80<br>0<br>0 2 4 6<br>V  GS [V]<br> [A]<br>I  D<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **7 Typ. transfer characteristics** 

**==> picture [127 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
I  94R" V  =H ys | 9H [[f5*f]] [[I]] 9 [[f]] [[R]] 9H"[Z#YMc<br>**----- End of picture text -----**<br>


## **6 Typ. drain-source on resistance** 

**==> picture [211 x 281] intentionally omitted <==**

**----- Start of picture text -----**<br>
R  9H"[Z#4R" I  9 ); T  V =25 °C<br>parameter: V  =H<br>15<br>5V 5.5V<br>45V<br>12<br>Gq 9<br>6 6V<br>6.5V<br>7V<br>BV<br>3 10V<br>0<br>0 50 100 150<br>I  D [A]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


## **8 Typ. forward transconductance** 

_g_ R^4R" _I_ 9 yy _T_ V 

**==> picture [205 x 242] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>160<br>120<br>80<br>40<br>0<br>0 50 100 150<br>I  D [A]<br> [S]<br> fs<br>g<br>**----- End of picture text -----**<br>


**IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G** 

## **9 Drain-source on-state resistance** 

_R_ 9H"[Z#4R" _T_ V ); _I_ 9 =90A; _V_ =H 

## **10 Typ. gate threshold voltage** 

_V_ =H"_T#4R" _T_ V ); _V_ =H4 _V_ 9H 

**==> picture [9 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
I  9<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
8 4<br>7 3.5<br>6 3 900 A<br>5 2.5 90 A<br>ci 10!<br>4 2<br>)(J<br>3 1.5<br>2 1<br>1 0.5<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T  j [°C] T  j [°C]<br>]<br>[m  [V]<br>R  DS(on) V  GS(th)<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

_C_ 4R" _V_ 9H ): _V_ =H =0V; _f_ =1 " I 

**12 Forward characteristics of reverse diode** 

_I_ <4R" _V_ H9# 

**==> picture [9 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
T  V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [4] 10 [3]<br>8U^^<br>8[^^<br>175 °C, 98%<br>10 [3] 10 [2]<br>10 [2] 8]^^ 10 [1]<br>10 [1] 10 [0]<br>0 20 40 60 0 0.5 1 1.5 2<br>V  DS [V] V  SD [V]<br>[pF]  [A]<br>C I  F<br>**----- End of picture text -----**<br>


**IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G** 

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**----- Start of picture text -----**<br>
13 Avalanche characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I  6H4R" t  6J ); R  =H =25 "<br>parameter: T  V"^_M]_#<br>100<br>100 °C<br>150 °C<br>10<br>1<br>1 10 100 1000<br>t  AV [µs]<br>15 Drain-source breakdown voltage<br>V  7G"9HH#4R" T  V ); I  9 =1mA<br>70<br>65<br>60<br>55<br>50<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [A]<br>I  AS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
14 Typ. gate charge<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V  =H4R" Q  SM_Q ); I  9<br>parameter: V  99<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
12<br>30V<br>10 12V VA<br>48V<br>8<br>6<br>4<br>2<br>0<br>0 20 40 60 80 100<br>Q  gate [nC]<br> [V]<br> GS<br>V<br>**----- End of picture text -----**<br>


**16 Gate charge waveforms** 

**==> picture [187 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
V =H<br>Q g<br>V S ^"_T#<br>Q S"_T# Q  ^b Q gate<br>Q  S^ Q  SP<br>**----- End of picture text -----**<br>


**IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G** 

**PG-TO220-3** 

**IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G** 

**PG-TO262-3 (I²-Pak)** 

**IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G** 

**PG-TO263 (D²-Pak)** 

**IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G** 

**Published by Infineon Technologies AG 81726 Munich, Germany** 

**© 2008 Infineon Technologies AG All Rights Reserved.** 

> **Legal** Legal **Disclaimer** Disclaimer 

> The The information information given given in this in this document document shall in shall no event in no be event regarded be regarded as a guarantee as a of guarantee of conditions or 

> conditions characteristics. or characteristics. With respect With to respect any examples to any examples or hints or hints given given herein, herein, any any typical typical values stated herein 

> values and/or stated any information herein and/or regarding any information the application regarding the of the application device, of Infineon the device, Technologies hereby disclaims Infineon any and Technologies all warranties hereby and disclaims liabilities any and of all any warranties kind, including and liabilities without of any limitation, kind, warranties of nonincluding infringement without of limitation, intellectual warranties property of rights non-infringement of any third of party. intellectual property rights 

of any third party. Information For further information on technology, delivery terms and conditions and **Information** nearest Infineon Technologies Office (www. infineon.com). For further information on technology, delivery terms and conditions and prices, please 

> contact Warnings the nearest Infineon Technologies Office (www.infineon.com). 

**Warnings** the types in question, please contact the nearest Infineon Technologies Office. The Infineon Due Technologies to technical component requirements, described components in may this contain Data Sheet dangerous may substances. be used in For life-support information devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written on the types in question, please contact the nearest Infineon Technologies Office. approval of Infineon Technologies, if a failure of such components can reasonably be expected to Infineon cause the Technologies failure of components that life-support, may be automotive, used in life-support aviation devices and aerospace or systems only device with or system or to affect the the express safety or written effectiveness approval of of Infineon that device Technologies, or system. if a failure Life support of such devices components or systems can are intended to be reasonably implanted be in expected the human to cause body the or failure to support of that and/or life-support maintain device and or system sustain or to and/or affect protect human life. If the they safety fail, or it is effectiveness reasonable of to that assume device that or system. the health Life support of the user devices or or other systems persons are may be endangered. 

intended to be implanted in the human body or to support and/or maintain and sustain 

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 



## Links

- [View this product on Novapart](https://novapart.co/products/IPP040N06N3GXKSA1/power-mosfet-n-channel-60-v-90-a-4000-ohm-to-220)
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- [Supplier page](https://es.farnell.com/infineon/ipp040n06n3gxksa1/mosfet-n-ch-90a-60v-pg-to220-3/dp/1775619)
---

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