# Power MOSFET, N Channel, 650 V, 24 A, 0.088 ohm, VSON, Surface Mount

![Product image](https://novapart.co/image/farnell:3886363/)

**URL**: https://novapart.co/products/IPL65R115CFD7AUMA1/power-mosfet-n-channel-650-v-24-a-0088-ohm-vson
**SKU**: IPL65R115CFD7AUMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.6500
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 2A - 4 weeks |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS CFD7 SJ Series |
| Qualification | - |
| Power Dissipation | 144W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | VSON |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 24A |
| Drain Source On State Resistance | 0.088ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3886363/)

**IPL65R115CFD7** 

## **MOSFET** 

## **Features** 

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**----- Start of picture text -----**<br>
* 650V break down DS(on)  voltage<br>**----- End of picture text -----**<br>


DS(on) switching DS(on) 

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**----- Start of picture text -----**<br>
Drain<br>Pin 5 a<br>Gate f it i *1<br>Pin 1<br>_  A *2 it<br>eo J.<br>Driver<br>~ as 7 Source<br>Source<br>*1: Internal body diode*2: Integrated ESD diode Pin 3,4 Pin 2<br>**----- End of picture text -----**<br>


## **Benefits** 

|**Parameter**|**Value**|**Unit**|||
|---|---|---|---|---|
|VDS @Tj,max|700|V|||
|RDS(on),max|115|mΩ|||
|Qg,typ|41|nC|||
|ID,pulse|82|A|||
|Eoss @400V|5.8|µJ|||
|Bodydiode diF/dt|1300|A/µs|||
||||||
|||**Package**|**Marking**||
|IPL65R115CFD7||PG-VSON-4|65R115F7|see Appendix A|



Final Data Sheet 

1 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPL65R115CFD7** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 

Final Data Sheet 

2 

Rev.�2.0,��2021-07-28 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPL65R115CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|24<br>15|A|TC=25°C<br>TC=100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|82|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|97|mJ|ID=4.7A; VDD=50V; see table 10|
|Avalanche energy, repetitive|_E_AR|-|-|0.48|mJ|ID=4.7A; VDD=50V; see table 10|
|Avalanche current, single pulse|_I_AS|-|-|4.7|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|120|V/ns|_V_DS=0...400V|
|Gate source voltage(static)|_V_GS|-20|-|20|V|static;|
|Gate source voltage(dynamic)|_V_GS|-30|-|30|V|AC(f>1 Hz)|
|Power dissipation|_P_tot|-|-|144|W|_T_C=25°C|
|Storage temperature|_T_stg|-40|-|150|°C|-|
|Operating junction temperature|_T_j|-40|-|150|°C|-|
|Mountingtorque|-|-|-|-|Ncm|-|
|Continuous diode forward current1)|_I_S|-|-|24|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|82|A|_T_C=25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|70|V/ns|_V_DS=0...400V,_I_SD<=9.7A,_T_j=25°C<br>see table 8|
|Maximum diode commutation speed|diF/dt|-|-|1300|A/µs|_V_DS=0...400V,_I_SD<=9.7A,_T_j=25°C<br>see table 8|
|Insulation withstand voltage|_V_ISO|-|-|n.a.|V|_V_rms,_T_C=25°C,_t_=1min|



> 1) Limited by Tj max. 

> 2) Pulse width tp limited by Tj,max 

3) Identical low side and high side switch with identical RG 

Final Data Sheet 

3 

Rev.�2.0,��2021-07-28 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPL65R115CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction  - case|_R_thJC|-|-|0.87|°C/W|-|
|Thermal resistance,junction  - ambient|_R_thJA|-|-|62|°C/W|device on PCB, minimal footprint|
|Thermal resistance, junction  - ambient<br>for SMD version|_R_thJA|-|35|45|°C/W|Device on 40mm*40mm*1.5mm<br>epoxy PCB FR4 with 6cm² (one<br>layer, 70µm thickness) copper area<br>for drain connection and cooling.<br>PCB is vertical without air stream<br>cooling.|
|Soldering temperature, wave- & reflow<br>soldering allowed|_T_sold|-|-|260|°C|reflow MSL2A|



Final Data Sheet 

Rev.�2.0,��2021-07-28 

4 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPL65R115CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|650|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|3.5|4|4.5|V|_V_DS=_V_GS,_I_D=0.48mA|
|Zero gate voltage drain current1)|_I_DSS|-<br>-|-<br>8|1<br>37|µA|_V_DS=650V,_V_GS=0V,_T_j=25°C<br>_V_DS=650V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|-|1000|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.088<br>0.195|0.115<br>-|Ω|_V_GS=10V,_I_D=9.7A,_T_j=25°C<br>_V_GS=10V,_I_D=9.7A,_T_j=150°C|
|Gate resistance|_R_G|-|6|-|Ω|_f_=1MHz,opendrain|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|1942|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Output capacitance|_C_oss|-|32|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Effective output capacitance, energy<br>related2)|_C_o(er)|-|73|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance, time<br>related3)|_C_o(tr)|-|751|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|16|-|ns|_V_DD=400V,_V_GS=13V,_I_D=9.7A,<br>_R_G=1.8Ω;seetable9|
|Rise time|_t_r|-|6.5|-|ns|_V_DD=400V,_V_GS=13V,_I_D=9.7A,<br>_R_G=1.8Ω;seetable9|
|Turn-off delay time|_t_d(off)|-|70|-|ns|_V_DD=400V,_V_GS=13V,_I_D=9.7A,<br>_R_G=1.8Ω;seetable9|
|Fall time|_t_f|-|3|-|ns|_V_DD=400V,_V_GS=13V,_I_D=9.7A,<br>_R_G=1.8Ω;seetable9|



## **Table�6�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|11|-|nC|_V_DD=400V,_I_D=9.7A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|13|-|nC|_V_DD=400V,_I_D=9.7A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|41|-|nC|_V_DD=400V,_I_D=9.7A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.7|-|V|_V_DD=400V,_I_D=9.7A,_V_GS=0to10V|



> 1) Maximum specification is defined by calculated six sigma upper confidence bound 

> 2) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 3) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

Rev.�2.0,��2021-07-28 

5 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPL65R115CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|1.0|-|V|_V_GS=0V,_I_F=9.7A,_T_j=25°C|
|Reverse recovery time|_t_rr|-|110|165|ns|_V_R=400V,_I_F=9.7A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Reverse recovery charge|_Q_rr|-|0.56|1.12|µC|_V_R=400V,_I_F=9.7A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Peak reverse recovery current|_I_rrm|-|8.7|-|A|_V_R=400V,_I_F=9.7A,d_i_F/d_t_=100A/µs;<br>see table 8|



Final Data Sheet 

6 

Rev.�2.0,��2021-07-28 

**IPL65R115CFD7** 

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**----- Start of picture text -----**<br>
150 10 [3]<br>a Ca =ee<br>————o|{t —rdSeses—iti‘“ TS SS ES ES A ES A A AOS<br>125 PN 10 [2] _———_ _----——— __ —_---- $ = ===<br>1 µs<br>10 [1]<br>[- '< — |r KNRT<br>100 10 µs<br>SS Ne 2 |<br>a es Oe a I OO NN NN |<br>a 10 [0] Ne<br>100 µs<br>6 75<br>Eee]SS SSS | 10 [-1] ETONNN N<br>1 ms<br>50<br>Ne NONE 10 ms<br>10 [-2]<br>DC<br>a SS<br>25<br>a a 10 [-3] a ee<br>eea | Fe SSSR ESS SSISSSE<br>0 rT | a|. | |, _N 10 [-4] Seaee eeellal<br>0 25 50 75 100 125 150 10 [0] 10 [1] 10 [2] 10 [3]<br>T C [°C] V DS [V]<br>P tot=f( T C) I D=f( V DS T C D t p<br>P tot I D<br>**----- End of picture text -----**<br>


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10 [3] _——_—_—_ ee 10 [0] a<br>esa ee ee eee SESS art t<br>a a 2<br>10 [2] _—E—————|| TTa EE——  ] ————ETes | [CAIeae.C A<br>1 µs 0.5<br>eae SSS 10 µs Ne J<br>10 [1]<br>=e ee 0.2 roe CH CTTI<br>10 [0] Aer EN NEESER 100 µs NAF L LeLY| ff<br>0.1<br>— NN NENT 5 10 [-1] if<br>1 ms<br>\ Tilyym tT TTT TTT<br>10 [-1] ee Ga A NNCUNGn NS Ill a a 0.05<br>10 ms<br>0.02<br>SE DC 0.01 * ACe<br>10 [-2]<br>Tene eee ee J single pulse nT ea 0<br>Sssiiesesiinesen:<br>10 [-3] eeI(Aieann<br>10 [-4] rE TLETTT) 10 [-2]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]<br>V DS [V] t p [s]<br>I D=f( V DS ); T C =80°C; D =0; parameter: t p Z thJC =f(_); t P parameter: D=t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPL65R115CFD7** 

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**----- Start of picture text -----**<br>
150 TTTTTTIITTItTTttTyTtyri 100 TLLLLLELLELLLLLELLELLLLL<br>—————————_|_______, 20 V 3% LT it ttt ttt tt eet tT |<br>20 V<br>125 H+} ++ + + + +} + 10 V 4-4 a<br>80<br>10 V<br>FP E EREEEEEEaeREELS 8 V | EEEEEEREEEEEEFOOT Ao<br>8 V<br>100 PF}a Ett. te be (Ae ef FEE EEE EECA oa an e<br>a a 7 fr, 7 V — —<br>60<br>Z| Lf |<br>- FERREAAAEERE |Oe COEa S<br>75<br>BO<br>a 27 |<br>40<br>SESE) 7 V Ore<br>50 Pt yA{ f /. :SLs tra eeeseee| rr greaa MB S aneo e ey” ZWA/Cee e eeneennee<br>e /a ooooo<br>6 V<br>7ee) 7 Se fo C=<br>20<br>25<br>BAEEEEEEEEEEEEEEEE 6 V | CE OAREEEEEEEEEE 5.5 V<br>oY 4222222 Sees fe<br>5.5 V 5 V<br>a p 42S<br>0 a 4.5 V 5 V 0 Fa 4.5 V<br>0 5 10 15 20 0 5 10 15 20<br>V DS [V] V DS [V]<br>I D=f( V DS T j V GS I D=f( V DS T j V GS<br>I D I D<br>**----- End of picture text -----**<br>


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0.350 2.5<br>aee  ee ee<br>ee eeeeee ee eeeee ee<br>0.300 | 2.0 eeee eeeeeeee ee ee<br>ee ee ee 4<br>ee ee ee ee ee ee<br>— 0.250 5.5 V 6 V 6.5 V 7 V 1.5 ee ee ee eeAe<br>} | / 10 V J ee eeee 2 ee<br>20 V<br>VIVA<br>0.200 Lf wos 1.0 ee ee ee a ee ee<br>/ We | RA<br>LE =<br>0.150 0.5<br>0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150<br>I D [A] T j [°C]<br>R DS(on)=f( I D T j V GS R DS(on)=f( T j I D V GS<br>] Ω<br>DS(on)  [normalized]<br>R DS(on)<br>R<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPL65R115CFD7** 

**==> picture [528 x 633] intentionally omitted <==**

**----- Start of picture text -----**<br>
150 12<br>a 25 °C Wi<br>eea ce _ j<br>125 10 400 V<br>eeSSSR See | COC eePreryy<br>A<br>120 V<br>AI<br>100 8<br>aA y<br>a J<br>, GEESE | COCOA<br>75 150 °C 6<br>s f= 7 =<br>Se _ ——<br>Yc [|<br>Ef |<br>50 Of| 4<br>FABEESEESREEES | COCCCeerr<br>er rr Annee<br>a L<br>25 eeOFeee 2 PATE]/ | | tt<br>A)<br>a<br>Pr<br>0 ee4 ee 0 fii ttet.tt.<br>0 2 4 6 8 10 12 0 10 20 30 40 50<br>V GS [V] Q gate [nC]<br>I D=f( V GS ); V DS  =20V; parameter: T j V GS=f( Q gate ); I D =9.7 A pulsed; parameter: V DD<br>Diagram 11: Forward characteristics of reverse diode Diagram 12: Avalanche energy<br>10 [2] SeBSESSEEREREESS |  (a 100 As es<br>|__| 80 a<br>pitt ttt tt tt<br>10 [1]<br>SS SS SS SSS a<br>eeeZ2 60<br>— foo<br>< HTS 25 °C esd ee eeee<br>ee Aen a<br>tt it} 40 se<br>10 [0] 125 °C<br>jy yy | | yr<br>ry | | | | ff fT 7~ 7 JT T TT]<br>A | NN<br>20<br>es<br>CECE LE Sn<br>a ee<br>10 [-1] LEA EEE 0 ne<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150<br>V SD [V] T j [°C]<br>I F=f( V SD T j E AS=f( T j ) I D =47A; V DD  =50V<br>I D V GS<br>I F AS<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPL65R115CFD7** 

**==> picture [528 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
730 NT ee 10 [5]  =======-==========—<br>10 [4]<br>T e<br>700 |<br>Ciss<br>a 22 Lit | TT yt ee<br>10 [3]<br>670<br>10 [2]<br>PF PPT Yeee ly lf Pee<br>Coss<br>640<br>10 [1]<br>iA] LY | | | | tT en<br>Crss<br>610 TA TTT|) | |) GeeEe<br>10 [0]<br>Aee =<br>es ee ========== ===<br>580 | | | | | tld] 10 [-1] (|PCE| | |PEPE| | | | |eee[| | Th T hdT hE ht hE ht rT<br>-50 -25 0 25 50 75 100 125 150 0 100 200 300 400 500<br>T j [°C] V DS [Vv]<br>V BR(DSS)=f( T j I D C =f( V DS V GS f<br>C<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
8 Tit TTT<br>BERR<br>6 LZ<br>BREEZE<br>eee 4 aeee<br>2 MeeBaan<br>0<br>0 100 200 300 400 500<br>V DS [Vv]<br>E oss = f (V DS )<br>oss<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPL65R115CFD7** 

**==> picture [405 x 159] intentionally omitted <==**

**----- Start of picture text -----**<br>
Test circuit for diode characteristics Diode recovery waveform<br>V,1 y<br>R 1<br>g Vg feminineee So 7 7<br>$90 % Vps<br>r<br>V DS ayti dv/dt<br>t<br>R 2<br>g<br>dl, / dt } 10%Vie| 5<br>Qe 10% lm<br>I F<br>R 1 = R 2<br>g g<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br><<br>; ¢ V DS<br>V GS V GS 10%<br>t d(on) t r t d(off) t f<br>t on t off<br>© -_ L U | “ L e y L es<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>C<br>¢<br>I D V DS<br>7<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPL65R115CFD7** 

Final Data Sheet 

12 

**IPL65R115CFD7** 

- 

- 

- 

- 

Final Data Sheet 

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**IPL65R115CFD7** 

## IPL65R115CFD7 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2021-07-28|Release of final version|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **Warnings** 

Final Data Sheet 

14 



## Links

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- [Supplier page](https://es.farnell.com/infineon/ipl65r115cfd7auma1/mosfet-n-ch-650v-24a-vson-4/dp/3886363)
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