# Power MOSFET, N Channel, 650 V, 9 A, 0.35 ohm, VSON, Surface Mount

![Product image](https://novapart.co/image/farnell:2443442RL/)

**URL**: https://novapart.co/products/IPL60R385CPAUMA1/power-mosfet-n-channel-650-v-9-a-035-ohm-vson
**SKU**: IPL60R385CPAUMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 83W |
| Drain Source On State Resistance | 0.35ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2443442RL/)

**IPL60R385CP** 

## **MOSFET** 

> **ThinPAK** ThinPAK is a a new leadless SMD package for HV MOSFETs. The new 

## **Features** 

**==> picture [57 x 74] intentionally omitted <==**

**----- Start of picture text -----**<br>
Drain<br>Pin 5<br>Pin 1Gate U t<br>Driver S ET<br>Source<br>Power<br>Pin 2<br>Source<br>Pin 3,4<br>**----- End of picture text -----**<br>


|**Parameter**<br>~~Table 1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|Vds @Tjmax|650|V|
|RDS(on),max|0.385|Ω|
|Qg,typ|17|nC|
|ID,pulse|27|A|
|Eoss @400V|3.2|µJ|
|Bodydiode diF/dt|400|A/µs|



||**Package**|**Marking**||
|---|---|---|---|
|IPL60R385CP|PG-VSON-4|6R385P|see Appendix A|



Final Data Sheet 

1 

**600V�CoolMOSª�CP�Power�Transistor IPL60R385CP** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 

Final Data Sheet 

2 

Rev.�2.2,��2017-09-06 

**600V�CoolMOSª�CP�Power�Transistor IPL60R385CP** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|9<br>5.7|A|TC= 25°C<br>TC= 100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|27|A|TC=25 °C|
|Avalanche energy, single pulse|_E_AS|-|-|227|mJ|ID=3.4 A; VDD= 50 V|
|Avalanche energy, repetitive3)|_E_AR|-|-|0.34|mJ|ID=3.4 A; VDD= 50 V|
|Avalanche current, repetitive3)|_I_AR|-|-|3.4|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|50|V/ns|_V_DS=0...480V|
|Gate source voltage|_V_GS|-20<br>-30|-<br>-|20<br>30|V|static;<br>AC (f>1 Hz)|
|Power dissipation|_P_tot|-|-|83|W|_T_C=25°C|
|OperatingTemperature|_T_j|-40|-|150|°C|-|
|Storage Temperature|_T_stg|-40|-|125|°C|-|
|Continuous diode forward current|_I_S|-|-|9.0|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|27|A|TC= 25°C|
|Reverse diode dv/dt4)|dv/dt|-|-|15|V/ns|_V_DS=0...400V,_I_SD<=_I_D,_T_j=25°C<br>see table 8|
|Maximum diode commutation speed|diF/dt|-|-|400|A/µs|_V_DS=0...400V,_I_SD<=_I_D,_T_j=25°C<br>see table 8|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction  - case|_R_thJC|-|-|1.5|°C/W|-|
|Thermal resistance, junction  - ambient5|)_R_thJA|-|-|45|°C/W|SMD version, device on PCB, 6cm²<br>cooling area|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|reflow MSL2a|



> 1) Limited by Tj max. Maximum duty cycle 

> 2) Pulse width tp  limited by Tj,max 

> 3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f; Pulse width tp  limited by Tj,max 

> 4)�Identical�low�side�and�high�side�switch�with�identical� _R_ G 

> 5) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70?m) for drain connection. PCB is vertical without air stream cooling. 

Final Data Sheet 

3 

Rev.�2.2,��2017-09-06 

**IPL60R385CP** 

|Table 4<br>Static characteristics|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**||
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|600|-|-|V|_V_GS<br>_I_D|
|Gate threshold voltage|_V_(GS)th|2.5|3|3.5|V|_V_DS=_V_GS _I_D|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|1<br>-|µA|_V_DS<br>_V_GS<br>_T_j<br>_V_DS<br>_V_GS<br>_T_j<br>=600 V,<br>=0V,<br>=25°C<br>=600 V,<br>=0V,<br>=150°C|
|Gate-source leakage curent|_I_GSS|-|-|100|nA|_V_GS<br>_V_DS|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.35<br>0.90|0.385<br>-|Ω|_V_GS<br>_I_D<br>_T_j<br>_V_GS<br>_I_D<br>_T_j<br>=10V,<br>=5.2A,<br>=25°C<br>=10V,<br>=5.2A,<br>=150°C|
|Gate resistance|_R_G|-|1.8|-|Ω|_f_|



|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**||
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|790|-|pF|_V_GS<br>_V_DS<br>_f_|
|Output capacitance|_C_oss|-|38|-|pF|_V_GS<br>_V_DS<br>_f_|
|Effective output capacitance, energy<br>related1)|_C_o(er)<br>~~oo~~|-<br>~~oo~~|36<br>~~oo~~|-<br>~~oo~~|pF<br>~~oo~~|_V_GS<br>_V_DS=0...480V|
|Effective output capacitance, time<br>related2)|_C_o(tr)<br>~~oo~~|-<br>~~oo~~|96<br>~~oo~~|-<br>~~oo~~|pF<br>~~oo~~|_I_D<br>_V_GS<br>_V_DS=0...480V|
|Turn-on delay time|_t_d(on)|-|10|-|ns|_V_DD<br>_V_GS<br>_I_D<br>_R_G=3.3Ω<br>=400 V,<br>=13 V,<br>=5.2A,<br>; see table 9|
|Rise time|_t_r|-|5|-|ns|_V_DD<br>_V_GS<br>_I_D<br>_R_G=3.3Ω<br>=400 V,<br>=13 V,<br>=5.2A,<br>; see table 9|
|Turn-off delay time|_t_d(off)|-|40|-|ns|_V_DD<br>_V_GS<br>_I_D<br>_R_G=3.3Ω<br>=400 V,<br>=13 V,<br>=5.2A,<br>; see table 9|
|Fall time|_t_f|-|5|-|ns|_V_DD<br>_V_GS<br>_I_D<br>_R_G=3.3Ω<br>=400 V,<br>=13 V,<br>=5.2A,<br>; see table 9|



1) _C_ o(er) 2) _C_ o(tr) 

_C_ oss while _V_ DS is rising from 0 to 80% V (BR)DSS _C_ oss while _V_ DS is rising from 0 to 80% V (BR)DSS 

Final Data Sheet 

4 

**600V�CoolMOSª�CP�Power�Transistor IPL60R385CP** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0V,_I_F=5.2A,_T_j=25°C|
|Reverse recovery time|_t_rr|-|260|-|ns|_V_R=400V,_I_F=5.2d_i_F/d_t_=100A/µs<br>see table 8|
|Reverse recovery charge|_Q_rr|-|3.1|-|µC|_V_R=400V,_I_F=5.2d_i_F/d_t_=100A/µs<br>see table 8|
|Peak reverse recovery current|_I_rrm|-|24|-|A|_V_R=400V,_I_F=5.2d_i_F/d_t_=100A/µs<br>see table 8|



Final Data Sheet 

Rev.�2.2,��2017-09-06 

5 

**IPL60R385CP** 

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Final Data Sheet 

6 

**IPL60R385CP** 

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Final Data Sheet 

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**IPL60R385CP** 

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Final Data Sheet 

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600V CooIMOS™ CP Power Transistor **IPL60R385CP** 

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Final Data Sheet 

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600V CoolIMOS™ CP Power Transistor 

**IPL60R385CP** 

**==> picture [383 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
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Final Data Sheet 

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**IPL60R385CP** 

Final Data Sheet 

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**IPL60R385CP** 

- 

- 

Final Data Sheet 

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**IPL60R385CP** 

## IPL60R385CP 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.2|2017-09-06|Updated MSL; style updated|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

13 



## Links

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- [Supplier page](https://es.farnell.com/en-ES/infineon/ipl60r385cpauma1/mosfet-n-ch-650v-9a-vson-5/dp/2443442RL)
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