# Power MOSFET, N Channel, 600 V, 39 A, 0.073 ohm, VSON, Surface Mount

![Product image](https://novapart.co/image/farnell:2841637/)

**URL**: https://novapart.co/products/IPL60R085P7AUMA1/power-mosfet-n-channel-600-v-39-a-0073-ohm-vson
**SKU**: IPL60R085P7AUMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.8000
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS P7 |
| Qualification | - |
| Power Dissipation | 154W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | VSON |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 39A |
| Drain Source On State Resistance | 0.073ohm |
| Gate Source Threshold Voltage Max | 3.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2841637/)

**IPL60R085P7** 

## **MOSFET** 

cooler. 

## **Features** 

** ExcellentSignificant ESDreduction robustnessof switching >2kV (HBM)and conduction for all products ¢ Better R DS(on) /package products compared to competition low R DS(on) *A (below 10hm*mm?) 

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**----- Start of picture text -----**<br>
Drain<br>Pin 5 i.<br>ay<br>Gate __ 4<br>Pin 1<br>Driver<br>Source < A a<br>Power<br>Pin 2<br>Source<br>Pin 3,4<br>**----- End of picture text -----**<br>


## **Benefits** 

|**Parameter**<br>~~Table 1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|VDS @Tj,max|650|V|
|RDS(on),max|85|mΩ|
|Qg,typ|51|nC|
|ID,pulse|110|A|
|Eoss @400V|5.5|µJ|
|Bodydiode diF/dt|800|A/µs|



||**Package**|**Marking**||
|---|---|---|---|
|IPL60R085P7|PG-VSON-4|60R085P7|see Appendix A|



Final Data Sheet 

1 

**600V�CoolMOSª�P7�Power�Transistor IPL60R085P7** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 

Final Data Sheet 

2 

Rev.�2.0,��2017-09-19 

**600V�CoolMOSª�P7�Power�Transistor IPL60R085P7** 

**==> picture [120 x 53] intentionally omitted <==**

## **1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|39<br>24|A|TC=25°C<br>TC=100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|110|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|118|mJ|ID=5.5A; VDD=50V; see table 10|
|Avalanche energy, repetitive|_E_AR|-|-|0.58|mJ|ID=5.5A; VDD=50V; see table 10|
|Avalanche current, single pulse|_I_AS|-|-|5.5|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|80|V/ns|_V_DS=0...400V|
|Gate source voltage(static)|_V_GS|-20|-|20|V|static;|
|Gate source voltage(dynamic)|_V_GS|-30|-|30|V|AC(f>1 Hz)|
|Power dissipation|_P_tot|-|-|154|W|_T_C=25°C|
|Storage temperature|_T_stg|-40|-|150|°C|-|
|Operating junction temperature|_T_j|-40|-|150|°C|-|
|Mountingtorque|-|-|-|-|Ncm|-|
|Continuous diode forward current|_I_S|-|-|39|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|110|A|_T_C=25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|50|V/ns|_V_DS=0...400V,_I_SD<=39A,_T_j=25°C<br>see table 8|
|Maximum diode commutation speed|diF/dt|-|-|800|A/µs|_V_DS=0...400V,_I_SD<=39A,_T_j=25°C<br>see table 8|
|Insulation withstand voltage|_V_ISO|-|-|n.a.|V|_V_rms,_T_C=25°C,_t_=1min|



> 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 

> 2) Pulse width tp limited by Tj,max 

3) Identical low side and high side switch with identical RG 

Final Data Sheet 

3 

Rev.�2.0,��2017-09-19 

**600V�CoolMOSª�P7�Power�Transistor IPL60R085P7** 

**==> picture [120 x 53] intentionally omitted <==**

## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction  - case|_R_thJC|-|-|0.82|°C/W|-|
|Thermal resistance,junction  - ambient|_R_thJA|-|-|62|°C/W|device on PCB, minimal footprint|
|Thermal resistance, junction  - ambient<br>for SMD version|_R_thJA|-|35|45|°C/W|Device on 40mm*40mm*1.5mm<br>epoxy PCB FR4 with 6cm² (one<br>layer, 70µm thickness) copper area<br>for drain connection and cooling.<br>PCB is vertical without air stream<br>cooling.|
|Soldering temperature, wave- & reflow<br>soldering allowed|_T_sold|-|-|260|°C|reflow MSL2a|



Final Data Sheet 

Rev.�2.0,��2017-09-19 

4 

**600V�CoolMOSª�P7�Power�Transistor IPL60R085P7** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|600|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|3|3.5|4|V|_V_DS=_V_GS,_I_D=0.59mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|1<br>-|µA|_V_DS=600V,_V_GS=0V,_T_j=25°C<br>_V_DS=600V,_V_GS=0V,_T_j=150°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.073<br>0.17|0.085<br>-|Ω|_V_GS=10V,_I_D=11.8A,_T_j=25°C<br>_V_GS=10V,_I_D=11.8A,_T_j=150°C|
|Gate resistance|_R_G|-|4.8|-|Ω|_f_=1MHz,opendrain|
|**Table5Dynamiccharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|2180|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Output capacitance|_C_oss|-|37|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Effective output capacitance, energy<br>related1)|_C_o(er)|-|69|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance, time<br>related2)|_C_o(tr)|-|713|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|15|-|ns|_V_DD=400V,_V_GS=13V,_I_D=11.8A,<br>_R_G=3.3Ω;seetable9|
|Rise time|_t_r|-|7|-|ns|_V_DD=400V,_V_GS=13V,_I_D=11.8A,<br>_R_G=3.3Ω;seetable9|
|Turn-off delay time|_t_d(off)|-|70|-|ns|_V_DD=400V,_V_GS=13V,_I_D=11.8A,<br>_R_G=3.3Ω;seetable9|
|Fall time|_t_f|-|7|-|ns|_V_DD=400V,_V_GS=13V,_I_D=11.8A,<br>_R_G=3.3Ω;seetable9|



## **Table�6�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|12|-|nC|_V_DD=400V,_I_D=11.8A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|15|-|nC|_V_DD=400V,_I_D=11.8A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|51|-|nC|_V_DD=400V,_I_D=11.8A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.2|-|V|_V_DD=400V,_I_D=11.8A,_V_GS=0to10V|



> 1) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 2) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

Rev.�2.0,��2017-09-19 

5 

**600V�CoolMOSª�P7�Power�Transistor IPL60R085P7** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0V,_I_F=11.8A,_T_j=25°C|
|Reverse recovery time|_t_rr|-|263|-|ns|_V_R=400V,_I_F=6A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Reverse recovery charge|_Q_rr|-|2.9|-|µC|_V_R=400V,_I_F=6A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Peak reverse recovery current|_I_rrm|-|22|-|A|_V_R=400V,_I_F=6A,d_i_F/d_t_=100A/µs;<br>see table 8|



Final Data Sheet 

6 

Rev.�2.0,��2017-09-19 

**IPL60R085P7** 

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Final Data Sheet 

7 

**IPL60R085P7** 

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Final Data Sheet 

8 

**IPL60R085P7** 

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**----- Start of picture text -----**<br>
140 12<br>25 °C<br>Pt tt | PPP See<br>120 PPP<br>10<br>Pt rr Perr} PPP<br>| tt | | 7 tL TPT TTL ATI<br>100 120 V 400 V<br>CEE EEE | ECE yr<br>a 8<br>80 150 °C  anneen) 4cee<br>| ee, eo A<br>6<br>a<br>60<br>COATT |} eee 4<br>40<br>Pt | | | if/pe tt yt TAF PPP PPP eye 4<br>20 FLEEFLEE AAALLLELEELL 2 Soott7<br>CECAALLELE Fete<br>0 PT LLYA TE ELE 0 fi itt t tey tf<br>0 2 4 6 8 10 12 0 10 20 30 40 50 60<br>V GS [Vv] Q gate [nC]<br>I D=f( V GS V DS T j V GS=f( Q gate I D V DD<br>I D V GS<br>**----- End of picture text -----**<br>


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Final Data Sheet 

9 

**IPL60R085P7** 

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Final Data Sheet 

10 

**IPL60R085P7** 

**==> picture [474 x 547] intentionally omitted <==**

**----- Start of picture text -----**<br>
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Final Data Sheet 

11 

**IPL60R085P7** 

Final Data Sheet 

12 

**IPL60R085P7** 

- 

- 

- 

- 

Final Data Sheet 

13 

**IPL60R085P7** 

## IPL60R085P7 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2017-09-19|Release of final version|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

14 



## Links

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