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IPG20N06S2L65AATMA1
Dual MOSFET, N Channel, 55 V, 55 V, 20 A, 20 A, 0.053 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS Series
- Qualification: AEC-Q101
- Transistor Case Style: TDSON
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 43W
- Power Dissipation P Channel: 43W
- Drain Source Voltage Vds N Channel: 55V
- Drain Source Voltage Vds P Channel: 55V
- Continuous Drain Current Id N Channel: 20A
- Continuous Drain Current Id P Channel: 20A
- Drain Source On State Resistance N Channel: 0.053ohm
- Drain Source On State Resistance P Channel: 0.053ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.38 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**IPG20N06S2L-65A**
## **OptiMOS[®] Power-Transistor**
## Qualified om al **Features**
**==> picture [206 x 84] intentionally omitted <==**
**----- Start of picture text -----**<br>
Product Summary<br>V DS 55 V<br>R DS(on),max3) 65 mΩ<br>I D 20 A<br>rr<br>**----- End of picture text -----**<br>
- Dual N-channel Logic Level - Enhancement mode
## PG-TDSON-8-10
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS compliant)
- 100% Avalanche tested
- Feasible for automatic optical inspection (AOI)
**==> picture [258 x 32] intentionally omitted <==**
**----- Start of picture text -----**<br>
||||
|---|---|---|
|Type|Package|Marking|
|IPG20N06S2L-65A|PG-TDSON-8-10|2N06L65|
**----- End of picture text -----**<br>
## **Maximum ratings,** at _T_ j=25 °C, unless otherwise specified
**==> picture [463 x 292] intentionally omitted <==**
**----- Start of picture text -----**<br>
|||||||||
|---|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Value|Unit|
|Continuous drain current|
|I|D|T|C=25 °C,|V|GS=10 V|20|A|
|one channel active|[1)]|
|T|C=100 °C,|V|GS=10 V|14|
|Pulsed drain current|[1)]|I|D,pulse|-|80|
|one channel active|
|Avalanche energy, single pulse|[1, 3)]|E|AS|I|D=10A|40|mJ|
|ee|
|Avalanche current, single pulse|[3)]|I AS|-|15|A|
|ee|
|Gate source voltage|V|GS|-|±20|V|
|Power dissipation|
|one channel active|P|tot|T|C=25 °C|43|W|
|ef|
|Operating and storage temperature|T|j,|T|stg|-|-55 ... +175|°C|
|ee|
|IEC climatic category; DIN IEC 68-1|-|-|55/175/56|
|a|
**----- End of picture text -----**<br>
Rev. 1.0
page 1
2013-02-28
|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics1)**<br>**Values**<br>~~es~~<br>~~ee ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics1)**<br>**Values**<br>~~es~~<br>~~ee ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics1)**<br>**Values**<br>~~es~~<br>~~ee ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics1)**<br>**Values**<br>~~es~~<br>~~ee ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics1)**<br>**Values**<br>~~es~~<br>~~ee ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics1)**<br>**Values**<br>~~es~~<br>~~ee ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics1)**<br>**Values**<br>~~es~~<br>~~ee ee~~|
|---|---|---|---|---|---|---|
|Thermal resistance, junction - case<br>_R_thJC<br>-<br>-<br>-<br>3.5<br>K/W<br>SMD version, device on PCB<br>_R_thJA<br>minimal footprint<br>-<br>100<br>-<br>6 cm2cooling area2)<br>-<br>60<br>-<br>~~oe~~|||||||
|**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|=25 °C, unless otherwise specified||||||
|**Static characteristics**|||||||
|Drain-source breakdown voltage||_V_(BR)DSS _V_GS=0 V,_I_D= 1 mA|55|-|-|V|
|Gate threshold voltage||_V_GS(th)<br>_V_DS=_V_GS,_I_D=14 µA|1.2|1.6|2.0||
|Zero gate voltage drain current3)||_I_DSS<br>_V_DS=55 V,_V_GS=0 V,<br>_T_j=25 °C|-|0.01|1|µA|
|||_V_DS=55 V,_V_GS=0 V,<br>_T_j=125 °C2)|-|1|100||
|Gate-source leakage current3)||_I_GSS<br>_V_GS=20 V,_V_DS=0 V|-|1|100|nA|
|Drain-source on-state resistance3)||_R_DS(on)<br>_V_GS=4.5 V,_I_D=7.5A|-|67|79|mΩ|
|||_V_GS=10 V,_I_D=15A|-|53|65||
Rev. 1.0
page 2
2013-02-28
|Cafineon|Cafineon|||**IPG20N06S2L-65A**|**IPG20N06S2L-65A**|**IPG20N06S2L-65A**|**IPG20N06S2L-65A**|
|---|---|---|---|---|---|---|---|
|**Parameter**<br>**Dynamic characteristics1)**<br>~~ee ee~~||**Symbol**<br>**Conditions**<br>~~ee ~~||**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br> ~~ee~~||||
||Input capacitance3)|_C_iss||-|315|410|pF|
||Output capacitance3)|_C_oss|_V_GS=0 V,_V_DS=25 V,<br>_f_=1 MHz|-|90|120||
||Reverse transfer capacitance3)|Crss||-|35|50||
||Turn-on delay time|_t_d(on)||-|2|-|ns|
||Rise time|_t_r|_V_DD=27.5 V,|-|3|-||
||||_V_GS=10 V,_I_D=20 A,|||||
||Turn-off delay time|_t_d(off)|_R_G=11Ω|-|10|-||
||Fall time|_t_f||-|7|-||
||**Gate Charge Characteristics1, 3)**|||||||
||Gate to source charge|_Q_gs||-|1.2|1.6|nC|
||Gate to drain charge|_Q_gd|_V_DD=44 V,_I_D=20 A,|-|3.5|5.3||
||Gate charge total|_Q_g|_V_GS=0 to 10 V|-|9.4|12||
||Gate plateau voltage|_V_plateau||-|3.9|-|V|
||**Reverse Diode**|||||||
||Diode continous forward current1)<br>one channel active|_I_S||-|-|20|A|
||||_T_C=25 °C|||||
||Diode pulse current1)<br>one channel active|_I_S,pulse||-|-|80||
||Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=15 A,<br>_T_j=25 °C|-|1.0|1.3|V|
||Reverse recovery time1)|_t_rr|_V_R=27.5 V,_I_F=_I_S,<br>d_i_F/d_t_=100 A/µs|-|30|-|ns|
||Reverse recovery charge1, 3)|_Q_rr||-|28|-|nC|
1) Specified by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
3) Per channel
Rev. 1.0
page 3
2013-02-28
**IPG20N06S2L-65A**
## **1 Power dissipation**
_P_ tot = f( _T_ C); _V_ GS ≥ 6 V; one channel active
## **2 Drain current**
_I_ D = f( _T_ C); _V_ GS ≥ 6 V; one channel active
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45 25<br>40<br>20<br>35<br>30<br>15<br>25<br>20<br>10<br>15<br>10<br>5<br>5<br>0 A 0<br>0 50 100 150 200 0 50 100 150 200<br>T C [°C] T C [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>=f( V DS); ); T C=25°C; =25°C; D =0; one channel active Z thJC = f( t p)<br>parameter: t p parameter: D = t p/ T<br>100 10 [1]<br>1 µs<br>0.5<br>10 µs<br>10 [0]<br>0.1<br>10<br>100 µs<br>0.05<br>10 [-1] 0.01<br>1 ms<br>single pulse<br>1 Nfl 10 [-2]<br>1 10 100 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>2013-02-28<br> [W]<br> [A]<br>P tot I D<br> [A] [K/W]<br>I D<br>thJC<br>Z<br>**----- End of picture text -----**<br>
## **3 Safe operating area**
_I_ D=f( _V_ DS); ); _T_ C=25°C; =25°C; _D_ =0; one channel active parameter: _t_ p
Rev. 1.0
page 4
**IPG20N06S2L-65A**
## **5 Typ. output characteristics[3)]**
_I_ D = f( _V_ DS); _T_ j = 25 °C
parameter: _V_ GS
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**----- Start of picture text -----**<br>
80<br>10 V<br>60<br>5 V<br>40<br>4.5 V<br>20 4 V<br>3.5 V<br>3 V<br>0<br>0 1 2 3 4 5<br>V DS [V]<br> [A]<br>I D<br>**----- End of picture text -----**<br>
## **7 Typ. transfer characteristics[3)]**
_I_ D = f( _V_ GS); _V_ DS = 6V parameter: _T_ j
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**----- Start of picture text -----**<br>
80<br>-55 °C<br>25 °C<br>60<br>175 °C<br>40<br>20<br>0<br>1 3 5 7<br>V GS [V]<br> [A]<br>I D<br>**----- End of picture text -----**<br>
## **6 Typ. drain-source on-state resistance[3)]**
_R_ DS(on) = f( _I_ D); _T_ j = 25 °C parameter: _V_ GS
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**----- Start of picture text -----**<br>
160<br>3.5 V 4 V 4.5 V 5 V 5.5 V<br>140<br>120<br>100<br>80<br>60<br>10 V<br>40<br>0 20 40 60 80<br>I D [A]<br>8 Typ. drain-source on-state resistance [[3)]]<br> DS(on) = f(= f( T j); ); I D = 15 A; = 15 A; V GS = 10 V= 10 V<br>120<br>100<br>80<br>60<br>40<br>20<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>]Ω<br> [m<br>DS(on)<br>R<br>]<br>Ω<br> [m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
## **8 Typ. drain-source on-state resistance[[3)]]**
_R_ DS(on) = f(= f( _T_ j); ); _I_ D = 15 A; = 15 A; _V_ GS = 10 V= 10 V
Rev. 1.0
2013-02-28
page 5
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**----- Start of picture text -----**<br>
IPG20N06S2L-65A<br>9 Typ. gate threshold voltage 10 Typ. Capacitances [3)]<br>V GS(th) = f( T j); V GS = V DS C = f( V DS); V GS = 0 V; f = 1 MHz<br>parameter: I D<br>2.5 10 [4]<br>2<br>140µA 10 [3]<br>1.5<br>14µA<br>Ciss<br>1<br>10 [2] Coss<br>0.5<br>Crss<br>SE 0 10 [1]<br>-60 -20 20 60 100 140 180 0 5 10 15 20 25 30<br>T j [°C] V DS [V]<br>11 Typical forward diode characteristicis [3)] 12 Avalanche characteristics [3)]<br>IF = f(VSD) I A S= f( t AV)<br>parameter: T j parameter: Tj(start)<br>10 [2] 100<br>10<br>25 °C<br>10 [1]<br>100 °C<br>1 150 °C<br>175 °C 25 °C<br>10 [0] 0.1<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 10 100 1000<br>V SD [V] t AV [µs]<br> [pF]<br>C<br> [V]<br>GS(th)<br>V<br> [A] [A]<br>I F I AV<br>**----- End of picture text -----**<br>
Rev. 1.0
page 6
2013-02-28
**IPG20N06S2L-65A**
## **13 Avalanche energy[3)]**
_E_ AS = f( _T_ j)
## **14 Drain-source breakdown voltage**
_V_ BR(DSS) = f( _T_ j); _I_ D = 1 mA
parameter: _I_ D
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**----- Start of picture text -----**<br>
100 65<br>80 62<br>5 A<br>60 59<br>40 56<br>10 A<br>20 15 A 53<br>0 50<br>25 50 75 100 125 150 175 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>15 Typ. gate charge [[3)]] 16 Gate charge waveforms<br> GS = f(= f( Q gate); ); I D = 20 A pulsed= 20 A pulsed<br>parameter: V DD<br>12<br>V GS<br>11 V 44 V Q g<br>10<br>8<br>6<br>V<br>gs(th)<br>4 J/.<br>2 Q g(th) Q sw Q gate<br>0 pee Q gs Q gd<br>0 2 4 6 8 10<br>Q gate [nC]<br> [V]<br> [mJ]<br>AS<br>E BR(DSS)<br>V<br> [V]<br>GS<br>V<br>**----- End of picture text -----**<br>
**15 Typ. gate charge[[3)]]** _V_ GS = f(= f( _Q_ gate); ); _I_ D = 20 A pulsed= 20 A pulsed parameter: _V_ DD
Rev. 1.0
2013-02-28
page 7
## **Published by Infineon Technologies AG 81726 Munich, Germany**
## **© Infineon Technologies AG 2012 All Rights Reserved.**
## **Legal Disclaimer**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## **Information**
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## **Warnings**
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2013-02-28
**IPG20N06S2L-65A**
|Cinfineon|Cinfineon||**IPG20N06S2L-65A**|
|---|---|---|---|
|Revision History|Revision History|||
|**Version**||Date|Changes|
|Revision 1.0|Revision 1.0|20.09.2012|Final Data Sheet|
Rev. 1.0
page 9
2013-02-28
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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