IPD80R1K4CEATMA1

Power MOSFET, N Channel, 800 V, 3.9 A, 1.4 ohm, TO-252 (DPAK), Surface Mount

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Manufacturer: INFINEON
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Po
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: CoolMOS CE
Qualification: -
Power Dissipation: 63W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-252 (DPAK)
Drain Source Voltage Vds: 800V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 3.9A
Drain Source On State Resistance: 1.4ohm
Gate Source Threshold Voltage Max: 3V

Delivery and price
Units per pack	5000
Price	0.303 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 10, 2026