# Power MOSFET, N Channel, 600 V, 10.6 A, 0.342 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2420497/)

**URL**: https://novapart.co/products/IPD60R380P6BTMA1/power-mosfet-n-channel-600-v-106-a-0342-ohm-to-252
**SKU**: IPD60R380P6BTMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7330
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.342ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 83W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10.6A |
| Drain Source On State Resistance | 0.342ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2420497/)

## MOSFET 

IPx60R380P6 

Final 

IPD60R380P6 

## **Features** 

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**----- Start of picture text -----**<br>
D²PAK TO-220<br>tab y tab<br>ky 2 &<br>1 a: 3 19, "24<br>DPAK<br>. tab<br>1 2<br>3<br>Drain<br>Pin 2, Tab ,<br>van<br>Gate (<br>Pin 1<br>caat<br>Source<br>Pin 3<br>**----- End of picture text -----**<br>


## **Applications** 

|**Parameter**||**Value**|**Value**||**Unit**||||
|---|---|---|---|---|---|---|---|---|
|VDS @Tj,max||650|||V||||
|RDS(on),max||380|||mΩ||||
|Qg.typ||19|||nC||||
|ID,pulse||29|||A||||
|Eoss@400V||2.7|||µJ||||
|Bodydiode di/dt||500|||A/µs||||
|IPB60R380P6<br>~~Type/OrderingCode ~~||**Package**<br>PG-TO 263<br> ~~**|**~~||||**Marking**||Related Links|
|IPP60R380P6|||PG-TO 220||||||
|IPA60R380P6|||PG-TO 220 FullPAK|PG-TO 220 FullPAK||6R380P6||see Appendix A|
|IPD60R380P6|||PG-TO 252||||||



Final Data Sheet 

2 

600V�CoolMOS™�P6�Power�Transistor IPB60R380P6,�IPP60R380P6,�IPA60R380P6, IPD60R380P6 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 

Final Data Sheet 

3 

Rev.�2.2,��2015-07-10 

600V�CoolMOS™�P6�Power�Transistor IPB60R380P6,�IPP60R380P6,�IPA60R380P6, IPD60R380P6 

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**2�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|10.6<br>6.7|A|TC=25°C<br>TC=100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|29|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|210|mJ|ID=1.8A; VDD=50V; see table 12|
|Avalanche energy, repetitive|_E_AR|-|-|0.32|mJ|ID=1.8A; VDD=50V; see table 12|
|Avalanche current, repetitive|_I_AR|-|-|1.8|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|100|V/ns|_V_DS=0...400V|
|Gate source voltage(static)|_V_GS|-20|-|20|V|static;|
|Gate source voltage(dynamic)|_V_GS|-30|-|30|V|AC(f>1 Hz)|
|Power dissipation (Non FullPAK)<br>TO-220, TO-252, TO-263|_P_tot|-|-|83|W|_T_C=25°C|
|Power dissipation (FullPAK)<br>TO-220FP|_P_tot|-|-|31|W|_T_C=25°C|
|Storage temperature|_T_stg|-55|-|150|°C|-|
|Operating junction temperature|_T_j|-55|-|150|°C|-|
|Mounting torque (Non FullPAK)<br>TO-220|-|-|-|60|Ncm|M3 and M3.5 screws|
|Mounting torque (FullPAK)<br>TO-220FP|-|-|-|50|Ncm|M2.5 screws|
|Continuous diode forward current|_I_S|-|-|9.2|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|29|A|TC=25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|15|V/ns|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C<br>see table 10|
|Maximum diode commutation speed|dif/dt|-|-|500|A/µs|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C<br>see table 10|
|Insulation withstand voltage for<br>TO-220FP|_V_ISO|-|-|2500|V|_V_rms,_T_C=25°C,_t_=1min|



> 1) Limited by Tj max. Maximum duty cycle D=0.75 

> 2) Pulse width tp limited by Tj,max 

> 3)�Identical�low�side�and�high�side�switch�with�identical� _R_ G 

Final Data Sheet 

Rev.�2.2,��2015-07-10 

4 

600V�CoolMOS™�P6�Power�Transistor IPB60R380P6,�IPP60R380P6,�IPA60R380P6, IPD60R380P6 

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## **3�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics�(Non�FullPAK)�TO-220** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|1.5|°C/W|-|
|Thermal resistance,junction - ambient|_R_thJA|-|-|62|°C/W|leaded|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6mm (0.063 in.) from case for 10s|



## **Table�4�����Thermal�characteristics�(FullPAK)�TO-220FP** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|4|°C/W|-|
|Thermal resistance,junction - ambient|_R_thJA|-|-|80|°C/W|leaded|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6mm (0.063 in.) from case for 10s|



## **Table�5�����Thermal�characteristics�TO-252,�TO-263** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|1.5|°C/W|-|
|Thermal resistance,junction - ambient|_R_thJA|-|-|62|°C/W|device on PCB, minimal footprint|
|Thermal resistance, junction - ambient<br>for SMD version|_R_thJA|-|35|45|°C/W|Device on 40mm*40mm*1.5mm<br>epoxy PCB FR4 with 6cm² (one<br>layer, 70µm thickness) copper area<br>for drain connection and cooling.<br>PCB is vertical without air stream<br>cooling.|
|Soldering temperature, wave & reflow<br>soldering allowed|_T_sold|-|-|260|°C|reflow MSL1|



Final Data Sheet 

Rev.�2.2,��2015-07-10 

5 

**==> picture [146 x 65] intentionally omitted <==**

## 600V�CoolMOS™�P6�Power�Transistor IPB60R380P6,�IPP60R380P6,�IPA60R380P6, IPD60R380P6 

## **4�����Electrical�characteristics** 

at� _T_ j=25°C,�unless�otherwise�specified 

## **Table�6�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|600|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|3.5|4.0|4.5|V|_V_DS=_V_GS,_I_D=0.32mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|1<br>-|µA|_V_DS=600,_V_GS=0V,_T_j=25°C<br>_V_DS=600,_V_GS=0V,_T_j=150°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.342<br>0.889|0.380<br>-|Ω|_V_GS=10V,_I_D=3.8A,_T_j=25°C<br>_V_GS=10V,_I_D=3.8A,_T_j=150°C|
|Gate resistance|_R_G|-|7.8|-|Ω|_f_=1MHz,opendrain|
|**Table7Dynamiccharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|877|-|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Output capacitance|_C_oss|-|42|-|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Effective output capacitance,<br>energy related1)|_C_o(er)|-|33|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance,<br>time related2)|_C_o(tr)|-|135|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|12|-|ns|_V_DD=400V,_V_GS=13V,_I_D=4.8A,<br>_R_G=3.4Ω;seetable11|
|Rise time|_t_r|-|6|-|ns|_V_DD=400V,_V_GS=13V,_I_D=4.8A,<br>_R_G=3.4Ω;seetable11|
|Turn-off delay time|_t_d(off)|-|33|-|ns|_V_DD=400V,_V_GS=13V,_I_D=4.8A,<br>_R_G=3.4Ω;seetable11|
|Fall time|_t_f|-|7|-|ns|_V_DD=400V,_V_GS=13V,_I_D=4.8A,<br>_R_G=3.4Ω;seetable11|



## **Table�8�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|5.4|-|nC|_V_DD=400V,_I_D=4.8A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|7|-|nC|_V_DD=400V,_I_D=4.8A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|19|-|nC|_V_DD=400V,_I_D=4.8A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|6.1|-|V|_V_DD=400V,_I_D=4.8A,_V_GS=0to10V|



> 1) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 2) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

6 

Rev.�2.2,��2015-07-10 

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## 600V�CoolMOS™�P6�Power�Transistor IPB60R380P6,�IPP60R380P6,�IPA60R380P6, IPD60R380P6 

## **Table�9�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0V,_I_F=4.8A,_T_j=25°C|
|Reverse recovery time|_t_rr|-|232|-|ns|_V_R=400V,_I_F=4.8A,d_i_F/d_t_=100A/µs;<br>see table 10|
|Reverse recovery charge|_Q_rr|-|2.1|-|µC|_V_R=400V,_I_F=4.8A,d_i_F/d_t_=100A/µs;<br>see table 10|
|Peak reverse recovery current|_I_rrm|-|17|-|A|_V_R=400V,_I_F=4.8A,d_i_F/d_t_=100A/µs;<br>see table 10|



Final Data Sheet 

Rev.�2.2,��2015-07-10 

7 

IPD60R380P6 

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Final Data Sheet 

8 

IPD60R380P6 

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10 [2] 10 [2]<br>1 µs<br>1 µs<br>10 µs<br>tt 10 µs 10 [1] —H SN<br>10 [1] 100 µs<br>100 µs<br>1 ms<br>1 ms 10 [0] 10 ms<br>ZA ARNT | TN IEETNE™ LNT<br>10 [0] ——S———————— 10 ms —— ee | N a<br>DC<br>SSLEEae DC NEEne (Caofe 10 [-1] ENT NENT<br>10 [-1]<br>10 [-2]<br>a NL ee ee ee ee ee<br>Nill etet SC<br>10 [-2]<br>10 [-3]<br>a a<br>ee ee ll ee<br>10 [-3] 10 [-4]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [0] 10 [1] 10 [2] 10 [3]<br>V DS [V] V DS [V]<br>I D=f( V DS T C D t p I D=f( V DS T C D t p<br>10 [2] 10 [2]<br>1 µs<br>1 µs<br>10 [1] 10 µs<br>10 [1] 10 µs 100 µs<br>100 µs<br>1 ms<br>1 ms 10 [0] 10 ms<br>SAHA Spt | ETNONIN ON<br>10 [0] 10 ms<br>_ ee ee ee ee Ce ee PNT RRR<br>DC<br>Qo SSS SSHESSENSE DC NEES J 10 [-1] LLIN NN<br>10 [-1]<br>SENET 10 [-2] NNT<br>ell ev<br>10 [-2]<br>10 [-3]<br>ee Lt [ [J Tt Tt TT TTT tT TT TT<br>10 [-3] ee ll 10 [-4] es|<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [0] 10 [1] 10 [2] 10 [3]<br>V DS [V] V DS wal<br>I D=f( V DS T C D t p I D=f( V DS T C D t p<br>I D I D<br>I D I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

IPD60R380P6 

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30 18<br>a [TT TTTTTTTITftTfttiti 20 V [TL TTTI ITLL, 20 V y<br>10 V<br>10 V<br>S|a oea Fi TT TTT ETT Tye yy 8 V ZoLE<br>25 15<br>ea PE EET TE Ey Ty wea<br>EERE EEE EEE A PLT ETT TTT tt | gee |<br>8 V<br>SERRE EERE a EEE Se ZA 7 V<br>20 12<br>PEt ye Yl"<br>EEE | Ce<br>Pr yy hy<br>15 7 V 9<br>epST /, Fe ee SS C S CO fs fJ a<br>6 V<br>P E Y- LT<br>10 6<br>SE A | E e<br>s/s CY O A<br>5.5 V<br>/ a SS a |<br>6 V<br>5 Soe | 3 A<br>| F on<br>2 5.5 V LTT LT 5 V<br>, A. 4.5 V 5 V Aare 4.5 V<br>0 Fe 0 ZL Litt PP TT Pe<br>0 5 10 15 20 0 5 10 15 20<br>V DS [V] V DS [V]<br>I D=f( V DS T j V GS I D=f( V DS T j V GS<br>I D I D<br>**----- End of picture text -----**<br>


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2.00 SSS<br>1.90<br>1.80 ee| ee | ee<br>1.70 ——SS =ee eS—————_———SS<br>1.60 SS<br>1.50 ee eeeeee<br>1.40<br>=== =================<br>5.5 V 6 V 6.5 V 7 V<br>1.30<br>10 V<br>— =<br>1.20<br>1.10 SSFeaOese e ae<br>1.00 === === = ee 20 V<br>0.90<br>ee<br>0.80 Se=a aa Se<br>0.70 ====S=====S<br>0.60 a<br>0 5 10 15 20<br>I D [A]<br>R DS(on)=f( I D T j V GS<br>] Ω<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Final Data Sheet 

10 

IPD60R380P6 

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225<br>_——<br>200<br>175<br>Ca————————————QC<br>——————<br>150<br>——————————<br>——————<br>125<br>100<br>— Nf—<br>——————<br>75<br>ee<br>—————_——————<br>50<br>25 NN<br>——————<br>SB<br>0 —————a Oe<br>25 50 75 100 125 150<br>T j<br>[°C]<br>E AS=f( T j I D V DD<br>AS<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

11 

IPD60R380P6 

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700 10 [4]<br>680<br>660 Ciss<br>SeFEFEEEECEH | 10 [3] peer<br>640<br>— 620 Sooo ee<br>10 [2]<br>ae es eee<br>600<br>Coss<br>580<br>10 [1]<br>560 pte | Lee<br>Crss<br>540<br>a HACESEER<br>520 a 10 [0] PL ET EL EL EL EL ELE ELE<br>-75 -50 -25 0 25 50 75 100 125 150 175 0 100 200 300 400 500<br>T j [°C] V DS [V]<br>V BR(DSS)=f( T j I D C =f( V DS V GS f<br>C<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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4.0<br>—————<br>3.5 _ttA<br>Sf<br>3.0 A<br>/_—A<br>2.5 ————————<br>gf<br>a 2.0<br>fs<br>1.5<br>/—eeDec<br>1.0 aaea<br>—<br>0.5<br>os<br>0.0<br>—<br>0 100 200 300 400 500<br>V DS [V]<br>TNO E oss = f (V DS )<br>oss<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

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## 600V�CoolMOS™�P6�Power�Transistor IPB60R380P6,�IPP60R380P6,�IPA60R380P6, IPD60R380P6 

## **6�����Test�Circuits** 

## **Table�10�����Diode�characteristics** 

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Test circuit for diode characteristics Diode recovery waveform<br>V ,I<br>R g 1 VDS(peak) VDS<br>VDS<br>V DS IF tF trr tS<br>R g  2 dIF / dt<br>I F t<br>QF QS 10 %Irrm<br>R g 1 = RI F g  2 Irrm dIrr / dt tQrrrr =t= QF +tF S+QS<br>**----- End of picture text -----**<br>


## **Table�11�����Switching�times** 

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Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>V DS<br>V GS 10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>**----- End of picture text -----**<br>


## **Table�12�����Unclamped�inductive�load** 

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Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

13 

Rev.�2.2,��2015-07-10 

IPD60R380P6 

Final Data Sheet 

14 

IPD60R380P6 

Final Data Sheet 

15 

600V�CoolMOS™�P6�Power�Transistor IPB60R380P6,�IPP60R380P6,�IPA60R380P6, IPD60R380P6 

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MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX DOCUMENT NO.<br>A 4.50 4.90 0.177 0.193 Z8B00003319<br>A1 2.34 2.85 0.092 0.112<br>A2 2.42 2.86 0.095 0.113 SCALE 0<br>b 0.65 0.90 0.026 0.035<br>b1 0.95 1.38 0.037 0.054 2.5<br>b2 0.95 1.51 0.037 0.059<br>b3 0.65 1.38 0.026 0.054 0 2.5<br>b4 0.65 1.51 0.026 0.059 5mm<br>c 0.40 0.63 0.016 0.025<br>D 15.67 16.15 0.617 0.636<br>EUROPEAN PROJECTION<br>D1 8.97 9.83 0.353 0.387<br>E 10.00 10.65 0.394 0.419<br>e 2.54 (BSC) 0.100 (BSC)<br>e1 5.08 0.200<br>N 3 3<br>H 28.70 29.75 1.130 1.171 ISSUE DATE<br>L 12.78 13.75 0.503 0.541 05-05-2014<br>L1 2.83 3.45 0.111 0.136<br>�� 2.95 3.38 0.116 0.133 REVISION<br>Q 3.15 3.50 0.124 0.138 04<br>**----- End of picture text -----**<br>


## **Figure�3�����Outline�PG-TO�220�FullPAK,�dimensions�in�mm/inches** 

Final Data Sheet 

16 

Rev.�2.2,��2015-07-10 

IPD60R380P6 

Final Data Sheet 

17 

IPD60R380P6 

- IFX CoolIMOS **TM** 

- • IFX CoolIMOS__ **TM** • **TM** 

- 

Final Data Sheet 

18 

IPD60R380P6 

## IPB60R380P6, IPP60R380P6, IPA60R380P6, IPD60R380P6 

Previous Revision 

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||||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2013-12-05|Release of final version|
|2.1|2013-12-05|Release of multi-package datasheet|
|2.2|2015-07-10|PG-TO 263 package added|

**----- End of picture text -----**<br>


## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

19 



## Links

- [View this product on Novapart](https://novapart.co/products/IPD60R380P6BTMA1/power-mosfet-n-channel-600-v-106-a-0342-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipd60r380p6btma1/mosfet-n-ch-600v-10-6a-to-252/dp/2420497)
---

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