# Power MOSFET, N Channel, 600 V, 9 A, 0.3 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2862306/)

**URL**: https://novapart.co/products/IPD60R360P7SAUMA1/power-mosfet-n-channel-600-v-9-a-03-ohm-to-252
**SKU**: IPD60R360P7SAUMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2600
**Stock**: 1000+
**Lead Time**: 169 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 3 - 168 hours |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS P7 |
| Qualification | - |
| Power Dissipation | 41W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9A |
| Drain Source On State Resistance | 0.3ohm |
| Gate Source Threshold Voltage Max | 3.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2862306/)

**IPD60R360P7S** 

## **MOSFET** 

cooler. 

## **Features** 

DS(on) DS(on) *A 

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**----- Start of picture text -----**<br>
DPAK<br>tab<br>ra<br>~<br>yy 2 -<br>1 Lf<br>3 a<br>Drain<br>Pin 2 L<br>Pin 1Gate a ET)<br>NL<br>SourcePin 3 :<br>**----- End of picture text -----**<br>


## **Benefits** 

|**Parameter**<br>~~Table~~<br>~~1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|VDS @Tj,max|650|V|
|RDS(on),max|360|mΩ|
|Qg.typ|13|nC|
|ID,pulse|26|A|
|Eoss@400V|1.6|µJ|
|Bodydiode di/dt|900|A/µs|



||**Package**|**Marking**||
|---|---|---|---|
|IPD60R360P7S|PG-TO 252-3|60S360P7|see Appendix A|



Final Data Sheet 

1 

**600V�CoolMOSª�P7�Power�Transistor IPD60R360P7S** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 

Final Data Sheet 

2 

Rev.�2.0,��2017-06-12 

**600V�CoolMOSª�P7�Power�Transistor IPD60R360P7S** 

**==> picture [120 x 53] intentionally omitted <==**

## **1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|9<br>6|A|TC=25°C<br>TC=100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|26|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|27|mJ|ID=2.5A; VDD=50V; see table 10|
|Avalanche energy, repetitive|_E_AR|-|-|0.14|mJ|ID=2.5A; VDD=50V; see table 10|
|Avalanche current, single pulse|_I_AS|-|-|2.5|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|80|V/ns|_V_DS=0...400V|
|Gate source voltage(static)|_V_GS|-20|-|20|V|static;|
|Gate source voltage(dynamic)|_V_GS|-30|-|30|V|AC(f>1 Hz)|
|Power dissipation|_P_tot|-|-|41|W|_T_C=25°C|
|Storage temperature|_T_stg|-40|-|150|°C|-|
|Operating junction temperature|_T_j|-40|-|150|°C|-|
|Mountingtorque|-|-|-|-|Ncm|-|
|Continuous diode forward current|_I_S|-|-|9.0|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|26|A|_T_C=25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|50|V/ns|_V_DS=0...400V,_I_SD<=9A,_T_j=25°C<br>see table 8|
|Maximum diode commutation speed|dif/dt|-|-|900|A/µs|_V_DS=0...400V,_I_SD<=9A,_T_j=25°C<br>see table 8|
|Insulation withstand voltage|_V_ISO|-|-|n.a.|V|_V_rms,_T_C=25°C,_t_=1min|



> 1) Limited by Tj max. Maximum Duty Cycle D = 0.50 

> 2) Pulse width tp limited by Tj,max 

3) Identical low side and high side switch with identical Rg 

Final Data Sheet 

3 

Rev.�2.0,��2017-06-12 

**600V�CoolMOSª�P7�Power�Transistor IPD60R360P7S** 

**==> picture [120 x 53] intentionally omitted <==**

## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction  - case|_R_thJC|-|-|3.04|°C/W|-|
|Thermal resistance,junction  - ambient|_R_thJA|-|-|62|°C/W|device on PCB, minimal footprint|
|Thermal resistance, junction  - ambient<br>for SMD version|_R_thJA|-|35|45|°C/W|Device on 40mm*40mm*1.5mm<br>epoxy PCB FR4 with 6cm² (one<br>layer, 70µm thickness) copper area<br>for drain connection and cooling.<br>PCB is vertical without air stream<br>cooling.|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|reflow MSL1|



Final Data Sheet 

Rev.�2.0,��2017-06-12 

4 

**600V�CoolMOSª�P7�Power�Transistor IPD60R360P7S** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|600|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|3|3.5|4|V|_V_DS=_V_GS,_I_D=0.14mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|1<br>-|µA|_V_DS=600,_V_GS=0V,_T_j=25°C<br>_V_DS=600,_V_GS=0V,_T_j=150°C|
|Gate-source leakage current|_I_GSS|-|-|1000|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.300<br>0.704|0.360<br>-|Ω|_V_GS=10V,_I_D=2.7A,_T_j=25°C<br>_V_GS=10V,_I_D=2.7A,_T_j=150°C|
|Gate resistance|_R_G|-|6.2|-|Ω|_f_=1MHz,opendrain|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|555|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Output capacitance|_C_oss|-|10|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Effective output capacitance, energy<br>related1)|_C_o(er)|-|20|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance, time<br>related2)|_C_o(tr)|-|214|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|8|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.7A,<br>_R_G=10.0Ω;seetable9|
|Rise time|_t_r|-|7|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.7A,<br>_R_G=10.0Ω;seetable9|
|Turn-off delay time|_t_d(off)|-|42|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.7A,<br>_R_G=10.0Ω;seetable9|
|Fall time|_t_f|-|10|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.7A,<br>_R_G=10.0Ω;seetable9|



## **Table�6�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|3|-|nC|_V_DD=400V,_I_D=2.7A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|4|-|nC|_V_DD=400V,_I_D=2.7A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|13|-|nC|_V_DD=400V,_I_D=2.7A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.2|-|V|_V_DD=400V,_I_D=2.7A,_V_GS=0to10V|



> 1) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 2) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

Rev.�2.0,��2017-06-12 

5 

**600V�CoolMOSª�P7�Power�Transistor IPD60R360P7S** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0V,_I_F=2.7A,_T_j=25°C|
|Reverse recovery time|_t_rr|-|145|-|ns|_V_R=400V,_I_F=1A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Reverse recovery charge|_Q_rr|-|0.74|-|µC|_V_R=400V,_I_F=1A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Peak reverse recovery current|_I_rrm|-|11|-|A|_V_R=400V,_I_F=1A,d_i_F/d_t_=100A/µs;<br>see table 8|



Final Data Sheet 

6 

Rev.�2.0,��2017-06-12 

**IPD60R360P7S** 

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Final Data Sheet 

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**IPD60R360P7S** 

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Final Data Sheet 

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**IPD60R360P7S** 

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10 [2]<br>ee<br>yA“<br>AfVn<br>10 [1]<br>OP A)<br>z EE GEE<br>/<br>125 °C 25 °C<br>/<br>10 [0]<br>ee<br>10 [-1]<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>V SD<br>[Vv]<br>I F=f( V SD T j<br>I F<br>**----- End of picture text -----**<br>


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Final Data Sheet 

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**IPD60R360P7S** 

**==> picture [528 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
690 10 [4]<br>680<br>670660 es es ee a AEE<br>10 [3]<br>650 Ciss<br>ee ee<br>640<br>_ 630620 fF—_——|__| [iA  41],/ Pd | SEBEEEREEEEERESEEEESerrrERR<br>10 [2]<br>a a 610 2 2<br>600 Coss<br>590<br>580<br>10 [1]<br>px TNE<br>570<br>74 fp foe a) Pree<br>560550540 yrSe{| Ff ff ft= 10 [0] aCRETEeae— Crss aoeeae<br>-50 -25 0 25 50 75 100 125 150 0 100 200 300 400 500<br>T j [°C] V DS [V]<br>V BR(DSS)=f( T j I D C =f( V DS V GS f<br>C<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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3<br>2 ALLELE LE<br>2 LEELA<br>1 LLL Lera Lo<br>acre<br>ACCP<br>0<br>0 100 200 300 400 500<br>V DS [V]<br>Pe E oss = f (V DS )<br>oss<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPD60R360P7S** 

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**----- Start of picture text -----**<br>
Test circuit for diode characteristics Diode recovery waveform<br>V,1<br>R g 1 Vops'frmssnnnnnnnnnnennnennnnnnnn “ee eweocrecne<br>$90 % Vos<br>|<br>@™ dv/at<br>V DS<br>R g  2 dl, ]<br>/ dt J 10%V¥56| 4<br>I F<br>R g 1 = R g  2<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>c V DS |<br>V GS 10%<br>° F- V GS<br>t d(on) t r t d(off) t f<br>p> In<br>i) ~ t on o g ~ _ t off 2<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>po I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

11 

**IPD60R360P7S** 

Final Data Sheet 

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**IPD60R360P7S** 

- 

- 

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Final Data Sheet 

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**IPD60R360P7S** 

## IPD60R360P7S 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2017-06-12|Release of final version|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

14 



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> distributors in Europe and Asia. Unlike standard online stores, Novapart
> specialises in exactly the cases where availability is the real problem: stock
> shortages, allocation crises, end-of-life components, and cost-reduction
> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.
