# Power MOSFET, N Channel, 550 V, 9 A, 0.36 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1664024/)

**URL**: https://novapart.co/products/IPD50R399CP/power-mosfet-n-channel-550-v-9-a-036-ohm-to-252
**SKU**: IPD50R399CP
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8180
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 83W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 83W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.36ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 550V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9A |
| Drain Source On State Resistance | 0.36ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1664024/)

**IPD50R399CP** 

## **CoolMOS[TM] Power Transistor** 

**Product Summary** 

## **Features** 

pos _**V**_ **9N\_Si //* P** Y ~~PT~~ _**R**_ **>M#a`$&_Si *(-33 "** _**Q**_ **+1 `= Y&ejb** 

MIG;C 

FB?7DI ; available in Halogen free mould compound[a)] 

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**CoolMOS CP is designed for: *** DCM[ard][ and] PFC[ softswitching] for La_p Ballast[ SMPS][ topologies] 

|**Parameter**<br>Continuousdraincurrent|**Symbol **<br>~~rr~~|**Conditions**<br>~~rr~~<br>~~ee~~|**Unit**<br>**Value**<br>~~rr~~<br>~~ee~~|**Unit**|
|---|---|---|---|---|
|Continuous drain current|_I_>|_T_=<br>~~ee~~|;<br>3<br>0<br>,*<br>~~ee~~<br>~~a~~<br>~~ee~~|;|
|||_T_=<br>~~ee~~<br>~~a~~|||
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a) non-Halogen free (OPN: IPD50R399CPBT); Halogen free (OPN: IPD50R399CPAT) 

**IPD50R399CP** 

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**----- Start of picture text -----**<br>
|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Maximum ratings,|at|\|=25|°C,|unless|otherwise|specified|
|Parameter|Symbol|Conditions|Value|Unit|
|I|M|.(3|;|
|Continuous|diode|forward|current|P||T|=|=25|°C|po|
|I|M&bf^dW|,*|
|v|)V|t|[.$]|V|v|)V|t|+/|P)`d|
|Parameter|Symbol|Conditions|Values|Unit|
|min.|typ.|max.|
|Thermal characteristics|
|2>;GC|R|eZD=|'|'|+(/|E)Q|
|2>;GC|
|S_T[W`e|R|eZD;|^WSVWV|'|'|0,|
|Soldering|te|perature,|T|da^V|<GEC|1.6|C|(0.063|in.)|'|'|,0*|u=|

**----- End of picture text -----**<br>


**Electrical characteristics,** at \ 

## **Static characteristics** 

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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|V|>M|V|AM|
|Zeroero|gategate|voltagevoltage|draidrain|curren|t|I|>MM|T|=95“00,°C|0,|'|'|+|w;|
|\|
|V|>M|=500|,|V|AM|=0|,|
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|T|=150|°C|
|\|
|%|I|AMM|V|AM|V|>M|'|'|+**|`;|
|ate-source|leakage|current|P||=20|,|=0V Pf|
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|V|AM|=10|,|I|>|=49A,|
|'|*(3*|'|
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|\|
|%|R|A|f|'|,(,|'|"|

**----- End of picture text -----**<br>


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|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics**|||||||
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|%<br>ate Charge Characteristics|||||||
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|**Reverse Diode**|||||||
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|;|_t_cc|_V_L<br>_I_@7_I_M<br>V_i_@)V_t_<br>H<br>=100 A/|'|,0*|'|d|
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||_I_cc_||'|+,(,|'|;|
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**IPD50R399CP** 

## **1 Power dissipation** 

_P_ eae7X# _T_ =$ 

## **2 Safe operating area** 

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## **3 Max. transient thermal impedance** 

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## **4 Typ. output characteristics** 

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**IPD50R399CP** 

## **5 Typ. output characteristics** 

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**----- Start of picture text -----**<br>
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## **6 Typ. drain-source on-state resistance** 

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## **7 Drain-source on-state resistance** 

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30<br>25<br>||| 25°C<br>20<br>15 [ 150 °C<br>10<br>|i:<br>5<br>Z<br>0<br>0 2 4 6 8 10<br>V GS [V]<br> [A]<br>I D<br>**----- End of picture text -----**<br>


**IPD50R399CP** 

## **9 Typ. gate charge** 

_V_ AM7X# _Q_ YSeW ); _I_ > 

F7G7C _V_ >> 

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**----- Start of picture text -----**<br>
10<br>Y<br>8<br>6<br>4<br>2<br>[<br>0<br>0 5 10 15 20<br>Q gate [nC]<br> [V]<br>GS<br>V<br>**----- End of picture text -----**<br>


## **11 Avalanche energy** 

_E_ ;M7X# _T_ \ )) _I_ > S3.3A; _V_ >> 

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**----- Start of picture text -----**<br>
450<br>\<br>400<br>a<br>350<br>-\<br>300<br>250<br>\<br>200<br>\<br>150<br>\<br>100<br>50<br>aN<br>0<br>25 75 125 175<br>T j [°C]<br> [mJ]<br>AS<br>E<br>**----- End of picture text -----**<br>


## **10 Forward characteristics of reverse diode** 

_I_ @7X# _V_ M>$ 

F7G7C _T_ \ 

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**----- Start of picture text -----**<br>
10 [2]<br>10 [1]<br>10 [0]<br>10 [-1]<br>0 0.5 1 1.5 2<br>V SD [V]<br> [A]<br>I F<br>**----- End of picture text -----**<br>


## **12 Drain-source breakdown voltage** 

_V_ <L#>MM$7X# _T_ \ ); _I_ > 

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**----- Start of picture text -----**<br>
580<br>560<br>540<br>520<br>500<br>480<br>460<br>440<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [V]<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


**IPD50R399CP** 

**13 Typ. capacitances** 

## **14 Typ. Coss stored energy** 

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C  7X# V  >M V  AM f O E  add =  X (V  >M )<br>10 [4] 5<br>=[dd<br>4<br>10 [3]<br>r ee (iy<br>3<br>=add<br>10 [2]<br>C o ty<br>2<br>10 [1]<br>1<br>=cdd<br>— |<br>10 [0] 0<br>0 100 200 300 400 500 0 100 200 300 400 500<br>V DS [V] V DS [V]<br> [µJ]<br> [pF]<br>C oss<br>E<br>**----- End of picture text -----**<br>


**IPD50R399CP** 

## **Definition of diode switching characteristics** 

**IPD50R399CP** 

**PG-TO252-3-1/PG-TO252-3-11/PG-TO252-3-21: Outline** 

**IPD50R399CP** 

## **Published by** 

**Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

## Legal Disclaimer 

> The The information information given given in in this this document document shall shall in in no no event event be be regarded regarded as as a a guarantee guarantee of of conditions or conditions characteristics. or characteristics. With respect to With any respect examples to any or hints examples given or herein, hints any given typical herein, values any stated typical herein 

> values and/or any stated information herein and/or regarding any the information application regarding of the device, the application Infineon Technologies of the device, hereby disclaims Infineon any and Technologies all warranties hereby and liabilities disclaims of any any and kind, all warranties including without and liabilities limitation, of any warranties kind, of nonincluding infringement without of intellectual limitation, property warranties rights of of any non-infringement third party. of intellectual property rights 

## of any third party. 

## Information 

## **Information** nearest Infineon Technologies Office (www. infineon.com). 

For further information on technology, delivery terms and conditions and prices, please 

Warnings contact the nearest Infineon Technologies Office 

#hhh([`X[`Wa`(Ua_$( Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems **Warnings** and/or automotive, aviation and aerospace applications or systems only with the express written Due to technical requirements, components may contain dangerous substances. For information approval of Infineon Technologies, if a failure of such components can reasonably be expected to on cause the the types failure in question, of that life-support, please contact automotive, the nearest aviation Infineon and aerospace Technologies device Office. or system or to affect Infineon the safety Technologies or effectiveness components of that device may or be system. used in Life life-support support devices devices or or systems systems are only intended with to be the implanted express in written the human approval body of or Infineon to support Technologies, and/or maintain if a failure and sustain of such and/or components protect human can life. If reasonably they fail, it is be reasonable expected to to assume cause the that failure the health of that of the life-support user or other device persons or system may be or endangered. to affect 

the safety or effectiveness of that device or system. Life support devices or systems are 

intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 



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---

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