# Power MOSFET, P Channel, 60 V, 35 A, 0.038 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3267846/)

**URL**: https://novapart.co/products/IPD380P06NMATMA1/power-mosfet-p-channel-60-v-35-a-0038-ohm-to-252
**SKU**: IPD380P06NMATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6810
**Stock**: 1000+
**Lead Time**: 64 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | OptiMOS |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 35A |
| Drain Source On State Resistance | 0.038ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3267846/)

**IPD380P06NM** 

## **MOSFET** 

## **OptiMOS[TM]** 

## **Features** 

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**----- Start of picture text -----**<br>
R DS(on)<br>**----- End of picture text -----**<br>


|**Parameter**<br>**Value**<br>_V_DS<br>-60<br>~~Table 1 Key Performance ~~|**Parameter**<br>**Value**<br>_V_DS<br>-60<br>~~Table 1 Key Performance ~~|**Parameter**<br>**Value**<br>_V_DS<br>-60<br>~~Table 1 Key Performance ~~|**Unit**<br>V<br> ~~Parameters~~|**Unit**<br>V<br> ~~Parameters~~|
|---|---|---|---|---|
||_R_DS(on),max|38||mΩ|
||_I_D|-35||A|



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D-PAK<br>tab<br>a =<br>1 sf<br>3 ~<br>Drain<br>tab<br>Gate<br>Pin 1<br>Gh<br>Source<br>Pin 3<br>**----- End of picture text -----**<br>


|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|IPD380P06NM<br>~~Type/OrderingCode |~~|PG-TO 252-3<br>~~|~~|380P06NM<br>|-<br>|



Final Data Sheet 

1 

**OptiMOS[TM] �Power�Transistor,�-60�V IPD380P06NM** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 

Final Data Sheet 

2 

Rev.�2.0,��2019-03-28 

**OptiMOS[TM] �Power�Transistor,�-60�V IPD380P06NM** 

**==> picture [120 x 53] intentionally omitted <==**

## **1�����Maximum�ratings** at� _T_ C=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-|-<br>-|-35<br>-28|A|_V_GS=-10V,_T_C=25°C<br>_V_GS=-10V,_T_C=100°C|
|Pulsed drain current1)|_ID,pulse_|-|-|-140|A|_T_C=25°C|
|Avalanche energy, single pulse2)|_E_AS|-|-|559|mJ|_I_D=-35A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|125|W|_T_C=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|1.2|°C/W|-|
|Device on PCB,<br>6 cm² cooling area3)|_R_thJA|-|-|75|°C/W|-|



## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|-60|-|-|V|_V_GS=0V,_I_D=-1mA|
|Gate threshold voltage|_V_GS(th)|-2.1|-3|-4|V|_V_DS=_V_GS,_I_D=-1700µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-0.1<br>-10|-1<br>-100|µA|_V_DS=-60V,_V_GS=0V,_T_j=25°C<br>_V_DS=-60V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|-10|-100|nA|_V_GS=-20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-|32|38|mΩ|_V_GS=-10V,_I_D=-35A|
|Gate resistance|_R_G|-|5|-|Ω|-|
|Transconductance|_g_fs|-|33|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=-35A|



- 1) See Diagram 3 for more detailed information 

- 2) See Diagram 13 for more detailed information 

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

Final Data Sheet 

3 

Rev.�2.0,��2019-03-28 

**OptiMOS[TM] �Power�Transistor,�-60�V IPD380P06NM** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|2500|-|pF|_V_GS=0V,_V_DS=-30V,_f_=1MHz|
|Output capacitance|_C_oss|-|360|-|pF|_V_GS=0V,_V_DS=-30V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|83|-|pF|_V_GS=0V,_V_DS=-30V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|16|-|ns|_V_DD=-30V,_V_GS=-10V,_I_D=-17.5A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|19|-|ns|_V_DD=-30V,_V_GS=-10V,_I_D=-17.5A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|47|-|ns|_V_DD=-30V,_V_GS=-10V,_I_D=-17.5A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|19|-|ns|_V_DD=-30V,_V_GS=-10V,_I_D=-17.5A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[1)]** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|-14|-|nC|_V_DD=-30V,_I_D=-35A,_V_GS=0to-10V|
|Gate charge at threshold|_Q_g(th)|-|-8|-|nC|_V_DD=-30V,_I_D=-35A,_V_GS=0to-10V|
|Gate to drain charge|_Q_gd|-|-24|-|nC|_V_DD=-30V,_I_D=-35A,_V_GS=0to-10V|
|Switchingcharge|_Q_sw|-|-30|-|nC|_V_DD=-30V,_I_D=-35A,_V_GS=0to-10V|
|Gate charge total|_Q_g|-|-63|-|nC|_V_DD=-30V,_I_D=-35A,_V_GS=0to-10V|
|Gate plateau voltage|_V_plateau|-|-5.5|-|V|_V_DD=-30V,_I_D=-35A,_V_GS=0to-10V|
|Output charge|_Q_oss|-|-28|-|nC|_V_DD=-30V,_V_GS=0V|



## **Table�7�����Reverse�diode** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|-35|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|-140|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|-0.9|-1.2|V|_V_GS=0V,_I_F=-35A,_T_j=25°C|
|Reverse recoverytime|_t_rr|-|63|-|ns|_V_R=-30V,_I_F=-37A,d_i_F/d_t_=-100A/µs|
|Reverse recoverycharge|_Q_rr|-|192|-|nC|_V_R=-30V,_I_F=-37A,d_i_F/d_t_=-100A/µs|



1) See diagram ,Gate charge waveform, for gate charge parameter definition Final Data Sheet 4 

Rev.�2.0,��2019-03-28 

**OptiMOS[TM] IPD380P06NM** 

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**----- Start of picture text -----**<br>
140 a een eee 40 ee<br>120 aGQ eS a CC 35 aee N . eeeeee<br>a ee ee<br>30<br>100 P N —}— Kf} tt<br>aa 25 ee Ne<br>80<br>— eee Pot | ot uN<br>20<br>=, a < SSN<br>60<br>Se<br>GY OC 15 A<br>a eS<br>a P| | | | ltl hv<br>40<br>10<br>20 a re SSS See<br>a CC 5<br>a | | | | | | ye<br>0 es 0 eeeee eee ee<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C[°C] T C[°C]<br>C P tot=f( T C) CCP I D=f( T C V GS| ≥<br>OV —OSOCOC#*CS<br>P tot -I D<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [3] 10 [1]<br>a a [ [TT T Titi tT Titi fT TTT 6T hUT TT<br>PTT ET ar<br>LE [ETE] TT TT, aee el<br>10 [2] COI R] 1 µs er ee<br>SHA HE CHA HH H<br>100 µs<br>10 [0]<br>oT 0.5<br>CAA ONIN RT SSeer<br>_ Y \ 1 ms CCCIere<br>= 10 [1] etA TIN 10 ms VL $ a e Cn<br>KE SAFEHH 0.2 eee/<br>DC<br>A 0.1 Gf<br>Ao oe gL<br>10 [-1]<br>ff AAT See ee ees EE<br>0.05<br>10 [0]<br>0.02<br>0.01<br>Yr=SStaeneea |eeoT TTTTT TINT | >4 HEHEHET Tn THil<br>single pulse<br>CEPI CEPT Cn WA<br>10 [-1] 10 [-2]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>-V DS [Vv] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>D<br>-I thJA<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

5 

## **OptiMOS[TM] IPD380P06NM** 

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**----- Start of picture text -----**<br>
100<br>LTT TTT TTT ETT ET TE ET Ey TT -10 V<br>LttLTT TTT tT TT ETT ET TE EET EP -8 V<br>-7 V<br>FLT TT  TTTT TTT TTETTtT TyTT ttET TTtT ayAg<br>80 LITTLTT  TT TTT tt tT tT tt | | Pye |<br>LTTPET TTTTT TTT TT T TTETtTTT yA| Aear tT<br> ETT TT TT tt | iA ET<br>PITT TT TTT TTT AAT TT tT tT<br>60 LTT TT TTT Aa TT ET TT<br>-6 V<br>z= TePitty YhA eer ep<br>BERR REER 4bAne<br>LITT TIT fee eT TT<br>40 LITT TT yA TT<br>litt OYA<br>BREED Z4GRee eee<br>BERG? AAR<br>ee -5 V<br>20 BE?Bae) 2 eee<br>|) ZZ 40 RRR eee<br>-4.5 V<br>G o ee<br>P<br>ZR RRR<br>0 Filiiv iti ti iti tT yey ete et Ty |<br>0 1 2 3 4 5<br>-V DS IV]<br>I D=f( V DS T j V GS<br>D<br>-I<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
80 BGGBRE ReRR  Re ee eeeee<br>ee<br>68 RReeee<br>LIT LTT TAT TVETT PITTTTTTT TET -5 V Te TT T T TTT T T TTTTTT [ETT] EE TT -6 V TTTT<br>-4.5 V<br>Sn nee ee || I<br>56 |_| LIT TAT TTT TTT TT TTT I TT TT<br>E L ITATI7ILIIII TTTTT TTT T T TTTTTIE TAT T  T A LTtTTT<br>LALA TT TT<br>CLIT TA TT TT TT tT ae -7 V<br>44 eaLet TT Tt Leeet Tt | eereT -8 V<br>“| | ef ee -10 V<br>i eT | er<br>ma e ee<br>32 e ET TY tT<br>eee eee TT TT TTT<br>COT TTT TT TT TT TT TET TE ET EE ET<br>LITT TTT TTT TTT TT TTT TT eT TY<br>LITT TTT TT TTT TEE ET PT<br>20 PITTI TTT TTT TTT Te ET Ey TT TI<br>0 10 20 30 40 50 60 70<br>-I D [Al<br>R DS(on)=f( I D T j V GS<br>] Ω<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
50 |} tt te PTT TP TT TTT PAT TTT 100 Ltt tte et PTT TT TT ET TT<br>See eee Lt} ttt ete PT tT TT TT<br>SRR eee Lt} eT t ttt te tt PT Ty TT<br>BERR ieee Lt Tet te te te eT TT TT TT<br>40 BERR hee 80 NT TP tt<br>SER see Bh. =SRE<br>175 °C<br>SER eee Sp ee<br>See eee | | | | | tt | | |Pee<br>See eee see Lt} ttt ete PT tT TT TT<br>30 SRR eee 60 Lt Tete te te PT TT<br><— |Pitt| | Ttte?PEtT ttTE TTtT tTTTtT TAvt TTPTT TTT | fg Lt}Lt TeteTete tettty tete [tT]  tt tT TT Ttyt<br>SERRE Ae Lt} te tt tt te et tt Tt<br>BERR eee See ptt tte et Pt TT tT TT TT<br>20 See) ieee 40 eee<br>25 °C<br>BERR Ae A) rp eee<br>SER, eee | |] ft eee<br>SEER) ieee Lt tty te tet te et ET Tt<br>SERRE) AR Lt Tete te ty te tt tT TT yt<br>10 SERRE) See 20 Lt tet te te te PT TETT<br>Lt tt TT eT TAAL TT TT TT Ltt tte et PT Tt TT TT TT<br>Lt tt te PT YA TT TT TT TT tT Lt} ttt ete PT tT TT TT<br>Lt tt tT Pe PA TT TT TT Lt} ttt ete PT tT TT TT<br>175 °C 25 °C<br>Ht Lt} ttt ete PT tT TT TT<br>0 L e | ttt PE TT TT | 0 PT TPE tT te te te Pe PE ET TE EE<br>2 3 4 5 6 7 6 7 8 9 10<br>-V GS Iv] -V GS Iv]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>] Ω<br>D<br>-I DS(on)<br>R<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

**OptiMOS[TM] IPD380P06NM** 

**==> picture [530 x 633] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.4 PETTITT TTT TTT TT TTT TTT TT Ty TT 3.50 i<br>LITT TTT TTT TTT TTT TTT TTT TT TT<br>2.0 LETTLTT TTT TTTTTTTTTTTTTTTTTTTTTTTTTTTT ET Ty TT 3.25 NUNh<br>PITTLIT TTT TTT TTT TTT TTT TTT TTT TTT TT TT TTTTT TT TARTAT AT TTT TTT \ NG<br>5 LIT TTT TTT TTT TTT TT TT TAT TT TT » N<br>3 1.6 LIT TTT TTT TTT TTT TT TTA TT TT 3.00 \ aN<br>a PITT TT TTT TTT TTT TT TAT TT TTT TT \ ING<br>2 PET TTT TTT TTT TTT AAT ET TT<br>3 PTT TTT TTT ET TTT PAT ET ET EE 5 » »<br>N 1.2 LIT TTT TTT TTT TTY TT TT TT 2.75 \ \<br>S LTT TTT TTT TTT AE ETT EET TT \ \<br>E LIT TTT TTT TAT TT EEE TT TT<br>=g 0.8 FtPitti ttt tt TTATE EE EETTTT 2.50 )\ -17000 µA<br>5 BEREEP eRe \<br>° LTT ATT TT ET EET EET ET TT<br>0.4 PETPETTITT TTT TTT TTT TTT TTT TTTETT ET TTT TTT TTT TTT  TTTTTTTT TT 2.25 )\<br>PTT TT ET TT ETT TT TT TT Ty ET Et tT \<br>PIT TTT TTT TTT ET TTT TT ET TT<br>LITT TTT TTT TTT TT TTT TTT TTT TT TT -1700 µA<br>0.0 PET ETT TTT TEP ETT ETT TET TT TET 2.00<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j y I D =85A V GS =A0V V GS(th=f( T j V GS= V DS I D<br>Diagram 11: Typ. capacitances Diagram 12: Forward characteristics of reverse diode<br>10 [4] 10 [3]<br>EEE ESSERE REE REESE : n 25 °C N<br>; TTT Tt Tet te te et et te | TTESTTT EEETre EEEtteSE ESSEet te SSeeazett<br>PTT tT eee ee ete ee et U 25 °C, max PTT TT Te eee ee et te eee TT<br>NER i 175 °C PTT T TTT Tet eT Tt TT<br>Ciss 175 °C, max<br>| SUHHHHBRRAAARREEESEQQHEEEEEEE | AUIUARUAAUSERAUABUAOUE<br>CC TT T<br>10 [3] 10 [2]<br>ANETTA) | U T EP<br>FREER NEE EEE REE EERE EEE EE EEE EES FEEEEEER EERE EER EEE EERE ERATE<br>2 2 Se<br>TONES COPE er ae oe<br>Ti Coss Yee<br>& AOE SEL EEE > LET TT TTT TTT pa TT er<br>UNE SE<br>PLETE NEE EEE Er TTA<br>10 [2] Crss 10 [1]<br>LAST) ) UTEArT<br>2Ee _ Se EEEEE FREEEGEEEEEEEEEEE EEE EE EEE EE<br>rT  CCCTTT  eeTe ttyeeeet te et pe te et PT TToS eeRRS Seeeee<br>LTT TTT tT ty Pte tee Pete eee eee LTT TT Tat Trey TET TTT TET<br>LETT TT TTT ETT TT ETT TEE TE TT LETT FETAEE<br>PCPA COOPER<br>10 [1] 10 [0]<br>LELEEELUETEEE ELA) ) = UETEEV [ETT]<br>0 10 20 30 40 50 60 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00<br>-V DS [V] -V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>GS(th)<br>-V<br>R<br>C -I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

**OptiMOS[TM] IPD380P06NM** 

**==> picture [526 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [2] 10<br>poaa a ET |1 -12 V-30 V PETPOPE TTT TT AY<br>-48 V<br>LT TE TTT ET ET e e ee seeet ET<br>8<br>A SH EEHY<br>EN II rPPee Pee eee AA<br>NING 25 °C TL ar<br>N . 6 PCCP er<br>\ : “ LITT TT TTT TTT TTT Aa ET<br>z TT TT TT T TTT TTTA e<br>10 [1] OSSE OsLPN 7 EER y E<br>a EH<br><a {tA TE<br>a 100 °C 4 y<br>Pr Litt Prt IT tT Tt TT TTT tT<br>ee eeNE Nl FITHY tAT TTT TTT TTT TTT ET tT<br>PLL ENT\ TTTS0}SoGATT TTT TTT TTT TT TTT PTET<br>2<br>\\ B DFSEAB R<br>150 °C ByLATAe TTT ETT TT Ey TEE ET<br>MET TIT TTT TT tT TTT TTT TT PTET TTT<br>10 [0] 0 PLT TTT ETT Ty TTT TT TTT<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50 60 70<br>t AV [us] -Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω ; parameter: T j,start V GS=f( Q gate ), I D =-35A pulsed, T j =25 °C; parameter: V DD<br>AV GS<br>-I -V<br>**----- End of picture text -----**<br>


**Diagram Gate charge waveforms** 

**==> picture [259 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
71 eee eee<br>Pt Tt ttt tt ee ee tt ee<br>Pt Tt ttt tt ee ee tt ee<br>Ee eee eee eee<br>69 SeeReePiPi yyyy teeeeeeeeeeeeeeeee ette teeee eeeeeeee eeee ee TAPepaeeee<br>eee eee eae<br>67 eee<br>Pt Tt eee tt et ee tt eh TA eee<br>RE eee eeeeee<br>eePt tt ttt tt ee eeeeett ETA eeeht<br>65 eee<br>See Aaa eee<br>BRR eee 4a eee<br>S yt eee ee ye ee ee ee yA<br>a PT yt eee eee ee ee ee Ae ee<br>63 PieeePt yyTt yeette eeete eeeeeette etrTeAA e eeet<br>RR eee eeeeee<br>61 Reeeeeeeeeeeeee42 eeeeee<br>eee<br>PT eee eee eee<br>PT TT Tt eee tT YP2tt ee eteeeee te<br>Pty tye eee yA eee ee<br>59 SRR 4eee<br>Pi yyy tp TAT Te ee ee tt<br>Re 4 ee eee<br>FERRE AER EEERE EERE<br>Pt Tt tt tT et et te<br>57 rt Tt tTiAT TTT eee te et et et<br>PtRDtt t7 24TT tT et eteeeteeee<br>BED 4 ee eee<br>BD 240 eee eeeee<br>55<br>rT TA TT Tt eT tte Pett pe PT eT TP TT TTT<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j j_=-250 I D WA<br>BR(DSS)<br>-V<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**OptiMOS[TM] �Power�Transistor,�-60�V IPD380P06NM** 

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## **5�����Package�Outlines** 

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DOCUMENT NO.<br>MILLIMETERS INCHES Z8B00003328<br>DIM<br>MIN MAX MIN MAX<br>A 2.16 2.41 0.085 0.095 SCALE 0<br>A1 0.00 0.15 0.000 0.006<br>b 0.64 0.89 0.025 0.035 2.5<br>b2 0.65 1.15 0.026 0.045<br>b3 4,95 5.50 0.195 0.217 0 2.5<br>c 0.46 0.61 0.018 0.024 5mm<br>c2 0.40 0.98 0.016 0.039<br>D 5.97 6.22 0.235 0.245 EUROPEAN PROJECTION<br>D1 5.02 5.84 0.198 0.230<br>E 6.35 6.73 0.250 0.265<br>E1 4.32 5.21 0.185 0.205<br>e 2.29 (BSC) 0.090 (BSC)<br>e1 4.57 (BSC) 0.180 (BSC)<br>N 3 3 ISSUE DATE<br>H 9.40 10.48 0.370 0.413 05-02-2016<br>L 1.18 1.78 0.046 0.070<br>L3 0.89 1.27 0.035 0.050 REVISION<br>L4 0.51 1.02 0.020 0.040 06<br>**----- End of picture text -----**<br>


## **Figure�1�����Outline�PG-TO�252-3,�dimensions�in�mm/inches** 

Final Data Sheet 

9 

Rev.�2.0,��2019-03-28 

**OptiMOS[TM] IPD380P06NM** 

## IPD380P06NM 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2019-03-28|Release of final version|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

10 



## Links

- [View this product on Novapart](https://novapart.co/products/IPD380P06NMATMA1/power-mosfet-p-channel-60-v-35-a-0038-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipd380p06nmatma1/mosfet-p-ch-60v-35a-175deg-c-125w/dp/3267846)
---

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