# Power MOSFET, P Channel, 100 V, 13.9 A, 0.178 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3873724RL/)

**URL**: https://novapart.co/products/IPD18DP10LMATMA1/power-mosfet-p-channel-100-v-139-a-0178-ohm-to-252
**SKU**: IPD18DP10LMATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4860
**Stock**: 1000+
**Lead Time**: 120 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | OptiMOS Series |
| Qualification | - |
| Power Dissipation | 83W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 83W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.1403ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 13.9A |
| Drain Source On State Resistance | 0.178ohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3873724RL/)

om. Cinfineone@ 

IPD18DP10LM 

## OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

## Features 

« P ~~-~~ channel 

- ¢ Very low on ~~-r~~ esistance Rosion) @ Ves=4 ~~.~~ 5 V 

- 100% avalanche tested 

- Logic level 

- ¢ Enhancement mode 

- ¢ Pb ~~-f~~ ree lead plating; ROHS compliant 

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- Halogen ~~-f~~ ree according to IEC61249 ~~-2-2~~ 1 

## Product validation 

Fully qualified according to JEDEC for Industrial Applications 

## Table 1 Key Performance Parameters 

~~Ca~~ 

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IPD18DP10LM 

PG ~~-T~~ 0252 ~~-3~~ 

183DP10LM ~~|~~ 

Final Data Sheet 

1 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

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OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

IPD18DP10LM 

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1 Maximum ratings at Ta=25 °C, unless otherwise specified 

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Table 2_—/ Maximum ratings<br>p aramet er symbol Note/ Test Conditi<br>ymbo Min. Typ. [Max._ ote / Test Condition<br>- 13.9 Ves= - 10 V, Tc=25 °C<br>Continuous drain current” lp i A y a n te 00 S<br>- 2.5 Ves= -4 .5 V,Ta=25°C, Rinsa=50°C/W”)<br>Avalanche energy, single pulse’) lExss |= se [240 fms Ip=-13 A, Res=25<br>Operating and storage temperature Tite 8 | a7 fro | hadie category; DIN IEC 68-1:<br>2 Thermal characteristics<br>Table 3_— Thermal characteristics<br>p aramet er symbol Note/ Test Condit<br>ymbo Min. Typ. [Max._ ote / Test Condition<br>Thermal resistance, junction - case [ee a con -<br>Thermal resistance, junction - ambient, °<br>6 cm? cooling area ee cc<br>Thermal resistance, junction - ambient, °<br>minimal footprint” ee cd ;<br>**----- End of picture text -----**<br>


> ‘) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified ~~.~~ For other case temperatures please refer to Diagram 2 ~~.~~ De ~~-r~~ ating will be required based on the actual environmental conditions. 

> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm? (one layer, 70 um thick) copper area for drain connection. PCB is vertical in still air. 

3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

IPD18DP10LM 

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## 3 Electrical characteristics at Tj=25 °C, unless otherwise specified 

## Table 4 Static characteristics 

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|||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|m|aramet|er|Symbol,ymbo|Min.|_|aeTyp.|[Max._it|N|o|te /I|TeTe t|s|t|ConditionCondit|
|Drain-source|breakdown|voltage|[Veross||-t100||-|[-|ve|Ves=0|V,|Ib=-1|mA|
|Gate|threshold|voltage|Vos=Ves,|[b|=-|1040|uA|
|Zero|.|-0.1|-1.0|Vos=|-|100|V,|Ves=0|V,|Tj=25|°C|
|gate voage chain current|eee|ee Vos=|-|100 V,|Ves=0 V,|Ti=125 °C|
|Gate-source|leakage|current|ess||e|[40|[100|[nA|Ves=-20|V,|Vos=0|V|
|.|.|140|.|3||178|Ves=|-|10|V,|In|=-|13|A|
|Drain-source|on-state|resistance|Rosny|442.9|Vas=-4.5|V,|In=-10|A|
|Transconductance|Ee Se|ee||Vos|22|/p|Rosionymax,|[p>=-13|A|
|Table|5|Dynamic|characteristics|
|arameter|ymbo|Min.||Typ.|[Max._||ote|/|Test|Condition|
|Input|capacitance"|Css|——|-—|—-|—-|[4600]|2100|Ves=0|V,|Vos=|-|50 V, f1|MHz|
|Reverse|transfer|capacitance”|Ce|eee|Ves=0|V,|Vos=-50|V,|1|MHz|
|sext™|T.|
|ext|I.|
|Table|6|Gate|charge|characteristics”)|
|Gatep|aramet|er|Syy|mbo|l|Min.NON_|Tye.|[Max._|Untote /||TeTe t|s|t|ConditionCondit|
|to|source|charge|lace|Sn|Vpp=-50|V,|Ip=-13|A,|Ves=0|to|-4.5|V|
|Gate|charge|at|threshold|lam|fe|fe|en|Vpp=-50|V,|Ip=-13|A,|Ves=0|to|-4.5|V|
|Gate|to|drain|charge”|la||=|f-t0.9|[-16.4|[nC|||Voo=-50|V,|Io=-13|A,|Ves=0|to|-4.5|V|
|Switching|charge|Qn||e|f-18.6 |||nC|||Von=-50V,|In=-13|A,|Vos=0|to|-4.5|V|
|Gate|charge|total’)|lade|sife2t|[26|nc|Vop=-50|V,|Ip=-13|A,|Ves=0|to|-4.5|V|
|Gate|plateau|voltage|Veen|[>|sf-3.2-|Vop=-50|V,|Ip=-13|A,|Ves=0|to|-4.5|V|
|Gate|charge|total|la|eS 42n|Vpp=-50|V,|Ip=-13|A,|Ves=0|to|-10|V|

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> ’) Defined by design. Not subject to production test. 2) See “Gate charge waveforms” for parameter definition Final Data Sheet 

4 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

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OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

IPD18DP10LM 

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## 4 Electrical characteristics diagrams 

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Diagram 1: Power dissipation Diagram 2: Drain current<br>100 15.0<br>Reee ss i  CO ee CO<br>A a ee ee ee ee eee<br>a ESOO<br>ee ee ee ee Pe SS SS<br>rT FN TTT a es Ns ee<br>a ee<br>0<br>NR) oTa<br>F>—<br>60 —|—__\ }_—__—_}—_}—. PEN<br>= rT ff. NL. ff. fT] -_ a<br>eS<br>3 nn a ee<br>& a ee a<br>40 eee PN<br>ee SG ey SS eS<br>ee ee ey SS LS A<br>of IE|  FE[|  FEE[TTXESETTM 2 a OO8hrWl<br>ee a |<br>es a ee ee eeSOee ee aa OC|<br>o_ | | | | J | N oo |<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>Tc [°C] Tc [°C]<br>Prot=f(Tc) Ip=f(Tc); |Ves|210 V<br>Diagram 3: Safe operating area Diagram 4: Max . transient thermal impedance<br>10 er 10!  (ooo<br>PKa e e e 11 wsust ttt i.| eesingle le ppulse CoatT a<br>a——---} | Arrous$——ee ee [|—‘|---— 00 . .0102 TTTron CoTTT TTT)<br>IA N 1 ll [esses 0.05 TTT<br>eS 1 ll {220 3 HL<br>HINEEE EAR ONINLUI | {e tlTTT<br>-—Lt +ATTT AAAEAN TTHt mst| tH oo 1PEA|| TIT | UU eerSaeTTTT| ETT<br>= on Zoi VAC = Peer Tern CUTCIT<br>< HTT TTT x ae<br>3 NA Mu) fs er A<br>LAAT[| N - 1 "Od<br>0 ANNI CUI YP . FeeUTI EIT Tl<br>SSS S S<br>LTA TT ANT TT eC IO<br>PAT TNA CZ) TT TT<br>CA ZAC o_o<br>ee eA ll a | |<br>ppp PTE IE TIT ETI ETT<br>wo e 10 " ELAINE10° 10' CUTIE10? ETI10° J g e 10 °E EN10 + TIN10 E°  ETT10 7 FT10 7 UTI10°<br>-Vos [V] t [s]<br>lp=f(Vos); Tc=25 °C; D=0; parameter: tp Zinsc=f(tp); parameter: D=tp/T<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

om Cinfi neon ; 

OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

IPD18DP10LM 

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Final Data Sheet 

7 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

IPD18DP10LM 

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Final Data Sheet 

8 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

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Final Data Sheet 

9 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~0~~ 5 

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OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V IPD18DP10LM 

CiT **n** fitneon 

## Revision History 

## IPD18DP10LM 

## Revision: 2021 ~~-0~~ 5 ~~-1~~ 0, Rev ~~.~~ 2.0 

|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Revision|||||||Subjects|||(major changes since last revision)|||||||||
|2.0||||2021~~-~~05~~-~~10||||Release|||offinalversion|||||||||



Trademarks All referenced product or service names and trademarks are the property of their respective owners. 

## We Listen to Your Comments 

Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document ~~.~~ Please send your proposal (including a reference to this document) to: erratum@infineo ~~n.~~ com 

Published by Infineon Technologies AG 81726 Miinchen, Germany © 2020 Infineon Technologies AG All Rights Reserved ~~.~~ 

## Legal Disclaimer 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) ~~.~~ 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ~~-i~~ nfringement of intellectual property rights of any third party ~~.~~ 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications ~~.~~ 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application ~~.~~ 

## Information 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). 

## Warnings 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office ~~.~~ 

The Infineon Technologies component described in this Data Sheet may be used in lif ~~e~~ -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lif ~~e~~ -support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Final Data Sheet 

11 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 



## Links

- [View this product on Novapart](https://novapart.co/products/IPD18DP10LMATMA1/power-mosfet-p-channel-100-v-139-a-0178-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipd18dp10lmatma1/mosfet-p-ch-100v-to-252-3/dp/3873724RL)
---

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