# Power MOSFET, P Channel, 100 V, 22 A, 0.0889 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3873723/)

**URL**: https://novapart.co/products/IPD11DP10NMATMA1/power-mosfet-p-channel-100-v-22-a-00889-ohm-to-252
**SKU**: IPD11DP10NMATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5170
**Stock**: 500+
**Lead Time**: 120 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | OptiMOS Series |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 22A |
| Drain Source On State Resistance | 0.0889ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3873723/)

om. Cinfineone@ 

IPD11DP10NM 

## OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

## Features 

- « P ~~-~~ channel 

- ¢ 100% avalanche tested 

- « Normal level 

- + Enhancement mode 

- Pb ~~-f~~ ree lead plating; ROHS compliant 

- * Halogen ~~-f~~ ree according to IEC61249 ~~-2-2~~ 1 

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## Product validation 

Fully qualified according to JEDEC for Industrial Applications 

## ~~Table 1 | Key Performance Parameters~~ 

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|---|---|
|Qn|i|
|—iSSSSCSCSCS™S|

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Drain<br>tab<br>(8)<br>**----- End of picture text -----**<br>


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@ ROHS<br>**----- End of picture text -----**<br>


## IPD11DP10NM 

PG ~~-T~~ 0252 ~~-3~~ 

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Final Data Sheet 

1 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

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OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

IPD11DP10NM 

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1 Maximum ratings at Ta=25 °C, unless otherwise specified 

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Table 2_—/ Maximum ratings<br>m aramet er symbol Note/ Test Condit<br>ymbo Min. _|Typ. [Max._| ote / Test Condition<br>- 22 Ves= - 10 V, Tc=25 °C<br>Continuous drain current” Ib - 15.4 |A Ves= - 10 V, Tc=100 °C<br>- 3.4 Ves= -1  0 V, Ta=25°C, Rrna=50°C/W?)<br>Avalanche energy, single pulse”) less |= ses(540 ms Ip=-18 A, Res=25 O<br>2 Thermal characteristics<br>Table 3_— Thermal characteristics<br>m aramet er Symym bo l jaeMin. | it N o te I T e stst ConditionCondit<br>Typ. [Max._|<br>Thermal resistance, junction - case Rc ee 2 -<br>Thermal resistance, junction - ambient, °<br>6 cm? cooling area Fon 50 Fon ;<br>Thermal resistance, junction - ambient, °<br>minimal footprint” fon fom<br>**----- End of picture text -----**<br>


> ‘) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified ~~.~~ For other case temperatures please refer to Diagram 2 ~~.~~ De ~~-r~~ ating will be required based on the actual environmental conditions. 

> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm? (one layer, 70 um thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev ~~.~~ 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

IPD11DP10NM 

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## 3 Electrical characteristics at Tj=25 °C, unless otherwise specified 

## Table 4 Static characteristics 

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||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|m|aramet|er|Symbol,ymbo|Min.aeTye.|[Maxit|N|o|te /I|TeTe t|s|t|ConditionCondit|
|Drain-source|breakdown|voltage|[Veross||-t100||-|[-|ve|Ves=0|V,|Ib=-1|mA|
|Gate|threshold|voltage|Vos=Ves,|lo|=-|1700|HA|
|Zero|gate|voltage|drain|current|ss||A|,|OD|vou|0|yr|ae|yr|1495|So|
|Gate-source|leakage|current|ess||e|[40|[100|[nA|Ves=-20|V,|Vos=0|V|
|Drain-source|on-state|resistance|Rosin)||=|——s«|(88.9|[141||ma_||Ves=-10|V,|Ip=-18|A|
|Table|5|Dynamic|characteristics|
|m|aramet|er|Syy|mbo|l|Min.aeTyp.|[Max.|it|N|o|te /I|TeTe t|s|t|ConditionCondit|
|Input|capacitance”|Css|=|[2500|3200|Ves=0|V,|Vos=|-|50 V,|f1|MHz|
|Output|capacitance”|ICs||=|—s«|480([230|pF|Ves=0|V,|Vos=-50|V,|f=1|MHz|
|Reverse|transfer|capacitance”|Ces|ses(86|(63|[pF|Vas=0|V,|Vos=-50|V,|f1|MHz|
|sext—||.|
|er|Se|cee|
|ext||.|
|ext||.|
|Table|6|Gate|charge|characteristics”)|
|p|aramet|er|Syy|mbo|l|jgMin,Tye.anit[Max|Noote /||TeTe t|s|t|ConditionCondit|
|Gate|to|source|charge|las|se|sfet2.3|[-|no|Vop=-50|V,|Ip=-18|A,|Ves=0|to|-10|V|
|Gate|charge|at|threshold|Qum|-f-76|-|nC|[Von=-50|V,|Io=-18|A,|Vos=0|to|-10|V|
|Gate|to|drain|charge”|las|sides|f18.9||-28|[nc|Vop=-50|V,|Ip=-18|A,|Ves=0|to|-10|V|
|Switching|charge|law|fe|fee|nc|Vop=-50|V,|Ip=-18|A,|Ves=0|to|-10|V|
|Gate|charge|total”|‘Qs|-|—-59f-74|nC|||Von=-50|V,|In=-18|A,|Vos=0|to|-10|V|
|Gate|plateau|voltage|Vote|[-sd-48|||lV|Vop=-50|V,|Ip=-18|A,|Ves=0|to|-10|V|

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> ’) Defined by design. Not subject to production test. 2) See “Gate charge waveforms” for parameter definition Final Data Sheet 

4 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

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eo. Cin fineon ; 

OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V IPD11DP10NM 

4 Electrical characteristics diagrams 

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Final Data Sheet 

OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V V 

IPD11DP10NM 

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Final Data Sheet 

7 Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

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OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V IPD11DP10NM 

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Final Data Sheet 

8 Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

IPD11DP10NM 

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Final Data Sheet 

9 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

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OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V IPD11DP10NM 

CiT **n** fitneon 

## Revision History 

## IPD11DP10NM 

## Revision: 2021 ~~-0~~ 5 ~~-1~~ 0, Rev ~~.~~ 2.0 

|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Revision|||||||Subjects|||(major changes since last revision)|||||||||
|2.0||||2021~~-~~05~~-~~10||||Release|||offinalversion|||||||||



Trademarks All referenced product or service names and trademarks are the property of their respective owners. 

## We Listen to Your Comments 

Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document ~~.~~ Please send your proposal (including a reference to this document) to: erratum@infineo ~~n.~~ com 

Published by Infineon Technologies AG 81726 Miinchen, Germany © 2020 Infineon Technologies AG All Rights Reserved ~~.~~ 

## Legal Disclaimer 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) ~~.~~ 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ~~-i~~ nfringement of intellectual property rights of any third party ~~.~~ 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications ~~.~~ 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application ~~.~~ 

## Information 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). 

## Warnings 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office ~~.~~ 

The Infineon Technologies component described in this Data Sheet may be used in lif ~~e~~ -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lif ~~e~~ -support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Final Data Sheet 

11 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 



## Links

- [View this product on Novapart](https://novapart.co/products/IPD11DP10NMATMA1/power-mosfet-p-channel-100-v-22-a-00889-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipd11dp10nmatma1/mosfet-p-ch-100v-to-252-3/dp/3873723)
---

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