# Power MOSFET, N Channel, 120 V, 75 A, 0.011 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2212834RL/)

**URL**: https://novapart.co/products/IPD110N12N3GATMA1/power-mosfet-n-channel-120-v-75-a-0011-ohm-to-252
**SKU**: IPD110N12N3GATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7010
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 3 - 168 hours |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 136W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 120V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 75A |
| Drain Source On State Resistance | 0.011ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2212834RL/)

## MOSFET 

Final 

**IPD110N12N3 G IPS110N12N3 G** 

## **OptiMOS[TM] 3Power-Transistor** 

## **Features** 

- N-channel, normal level 

- Excellent gate charge x _R_ DS(on) product (FOM) 

## **Product Summary** 

**==> picture [190 x 48] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|V|DS|120|V|
|R|DS(on),max|11|mΩ|
|I|D|75|A|

**----- End of picture text -----**<br>


- Very low on-resistance _R_ DS(on) 

- 175 °C operating temperature 

- Pb-free lead plating; RoHS compliant 

- Qualified according to JEDEC[1)] for target application 

- Halogen free according to IEC61249-2-21 * 

- Ideal for high-frequency switching and synchronous rectification 

**==> picture [258 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||
|---|---|---|
|Type|IPS110N12N3 G|IPD110N12N3 G|
|ky|
|||i?|
|Package|PG-TO251-3|PG-TO252-3|
|Marking|110N12N|110N12N|

**----- End of picture text -----**<br>


**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified 

**==> picture [484 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||||
|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Value|Unit|
|Continuous drain current|I|D|T|C=25 °C|75|A|
|a|
|T|C=100 °C|54|
|a|
|Pulsed drain current|[2)]|I|D,pulse|T|C=25 °C|300|
|a|
|Avalanche energy, single pulse|E|AS|I|D=75 A,|R|GS=25 Ω|120|mJ|
|re|
|Gate source voltage|[3)]|V|GS|±20|V|
|PP|
|P|tot|T|C=25 °C|136|W|
|re|
|Operating and storage temperature|T|j,|T|stg|-55 ... 175|°C|
|a|
|IEC climatic category; DIN IEC 68-1|55/175/56|
|ee|

**----- End of picture text -----**<br>


1)J-STD20 and JESD22 

- 2) see figure 3 

- 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V 

- Except package TO251-3 

Rev. 2.4 

page 1 

2015-06-24 

|~~( infineon.~~||||
|---|---|---|---|
|**Parameter**<br>~~( infineon.ee~~|**Symbol Conditions**<br>~~ee~~<br>~~ee ~~||**IPD110N12N3 G**<br>**IPS110N12N3 G**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~<br> ~~eel~~|
|**Thermal characteristics**||||
|Thermal resistance, junction - case|_R_thJC||-<br>-<br>1.1<br>K/W|
|Thermal resistance, junction -|_R_thJA|minimal footprint|-<br>-<br>75|
|ambient||6 cm2cooling area4)|-<br>-<br>50|



**Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified 

## **Static characteristics** 

|Drain-source breakdown voltage|_V_(BR)DSS <br>~~ee~~|_V_GS=0 V,_I_D=1 mA<br>~~ee~~|120<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|V|
|---|---|---|---|---|---|---|
|Gate threshold voltage|_V_GS(th)<br>~~ee~~|_V_DS=_V_GS,_I_D=83 µA<br>~~ee~~|2<br>~~ee ~~<br>~~ee~~<br>~~ee~~|3<br> ~~ee~~<br>~~ee~~|4<br>~~ee~~<br>~~ee~~||
|Zero gate voltage drain current|_I_DSS<br>~~ane~~|_V_DS=100 V,_V_GS=0 V,<br>_T_j=25 °C<br>~~ane~~|-<br>~~ee~~<br>~~ane~~|0.1<br>~~ane~~|1<br>~~ane~~|µA|
|||_V_DS=100 V,_V_GS=0 V,<br>_T_j=125 °C<br>~~ane~~<br>~~tT~~|-<br>~~ane~~<br>~~tT~~|10<br>~~ane~~<br>~~tT~~|100<br>~~ane~~<br>~~tT~~||
|Gate-source leakage current|_I_GSS<br>~~|~~|_V_GS=20 V,_V_DS=0 V<br>~~|~~|-<br>~~|~~|1<br>~~|~~|100<br>~~|~~|nA|
|Drain-source on-state resistance|_R_DS(on)<br>~~Pp;~~<br>~~pt~~|_V_GS=10 V,_I_D=75 A<br>~~Pp;~~<br>~~pt~~|-<br>~~Pp;~~<br>~~ee~~<br>|9.2<br>~~Pp;~~<br>~~ee~~<br>|11<br>~~Pp;~~<br>~~ee~~<br>|mΩ|
|Gate resistance|_R_G<br>~~ee~~<br>~~pt~~|~~ee~~<br>~~pt~~|-<br>~~ee~~<br>~~ee~~<br>|1.5<br>~~ee~~<br>~~ee~~<br>|-<br>~~ee~~<br>~~ee~~<br>|Ω|
|Transconductance|_g_fs<br>~~pt~~||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=75 A<br>~~pttT~~|42<br>~~ee~~<br>~~tT~~|83<br>~~ee~~<br>~~tT~~|-<br>~~ee~~<br>~~tT~~|S|



4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

Rev. 2.4 

page 2 

2015-06-24 

**IPD110N12N3 G IPS110N12N3 G** 

|**Parameter**|**Symbol **|**Conditions**||**Values**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics6)**|||||||
|Input capacitance|_C_iss||-|3240|4310|pF|
|Output capacitance|_C_oss|_V_GS=0 V,_V_DS=60 V,<br>_f_=1 MHz|-|408|543||
|Reverse transfer capacitance|_C_rss||-|22|-||
|Turn-on delay time|_t_d(on)||-|16|-|ns|
|Rise time|_t_r|_V_DD=60 V,_V_GS=10 V,|-|16|-||
|Turn-off delay time|_t_d(off)|_I_D=75 A,_R_G,ext=1.6Ω|-|24|-||
|Fall time|_t_f||-|8|-||
|**Gate Charge Characteristics5)**|||||||
|Gate to source charge|_Q_gs||-|18|-|nC|
|Gate to drain charge|_Q_gd||-|12|-||
|Switching charge|_Q_sw|_V_DD=60 V,_I_D=75 A,<br>_V_GS=0 to 10 V|-|20|-||
|Gate charge total6)|_Q_g||-|49|65||
|Gate plateau voltage|_V_plateau||-|5.6|-|V|
|Output charge6)|_Q_oss|_V_DD=60 V,_V_GS=0 V|-|56|75|nC|
|**Reverse Diode**|||||||
|Diode continous forward current|_I_S||-|-|75|A|
|||_T_C=25 °C|||||
|Diode pulse current|_I_S,pulse||-|-|300||
|Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=75 A,<br>_T_j=25 °C|-|1|1.2|V|
||_t_rr|_V_R=60 V,_I_F=_I_S,|-|90||ns|
|Reverse recovery charge|_Q_rr|d_i_F/d_t_=100 A/µs|-|249||nC|



- 5) See figure 16 for gate charge parameter definition 

- 6) Defined by design. Not subject to production test 

Rev. 2.4 

page 3 

2015-06-24 

**IPD110N12N3 G IPS110N12N3 G** 

## **1 Power dissipation** 

_P_ tot=f( _T_ C) 

**==> picture [226 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 50 100 150 200<br>T C [ ° C]<br> [W]<br>tot<br>P<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

_I_ D=f( _V_ DS); _T_ C=25 °C; _D_ =0 parameter: _t_ p 

**==> picture [225 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [3]<br>1 µs<br>10 µs<br>10 [2]<br>100 µs<br>1 ms<br>DC<br>10 [1] 10 ms<br>10 [0]<br>10 [-1]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3]<br>V DS [V]<br> [A]<br>I D<br>**----- End of picture text -----**<br>


## **2 Drain current** 

_I_ D=f( _T_ C); _V_ GS≥10 V 

**==> picture [225 x 612] intentionally omitted <==**

**----- Start of picture text -----**<br>
80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 50 100 150 200<br>T C [ ° C]<br>4 Max. transient thermal impedance<br> thJC=f(=f( t  p))<br>parameter:  D  = t  p// T<br>10 [1]<br>10 [0]<br>0.5<br>0.2<br>0.1<br>10 [-1] 0.05<br>0.02<br>0.01<br>single pulse<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t p [s]<br> [A]<br>I D<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **4 Max. transient thermal impedance** 

_Z_ thJC=f(=f( _t_ p)) 

parameter: _D_ = _t_ p// _T_ 

Rev. 2.4 

2015-06-24 

page 4 

**IPD110N12N3 G IPS110N12N3 G** 

## **5 Typ. output characteristics** 

## **6 Typ. drain-source on resistance** 

_I_ D=f( _V_ DS); _T_ j=25 °C 

_R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS 

**==> picture [468 x 634] intentionally omitted <==**

**----- Start of picture text -----**<br>
parameter:  V  GS parameter:  V  GS<br>250 30<br>10 V<br>8 V<br>4.5 V 5 V<br>7 V 25<br>200<br>20<br>5.5 V<br>150 6.5 V<br>15<br>6 V<br>100 6 V<br>10<br>10 V<br>5.5 V<br>50<br>5<br>5 V<br>4.5 V<br>0 [a= 0<br>0 1 2 3 4 5 0 20 40 60 80<br>V DS [V] I D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>I  D=f(=f( V  GS); |); | V  DS|>2||>2| I  D|| R  DS(on)max g  fs=f( I  D);  T  j=25 °C<br>parameter:  T  j<br>200 100<br>80<br>150<br>60<br>100<br>40<br>175 °C<br>50<br>25 °C 20<br>0 0<br>0 2 4 6 8 0 20 40 60 80<br>V GS [V] I D [A]<br>]<br>Ω<br>[m<br> [A]<br>I D<br>DS(on)<br>R<br> [A]  [S]<br>I D g fs<br>**----- End of picture text -----**<br>


## **7 Typ. transfer characteristics** 

_I_ D=f(=f( _V_ GS); |); | _V_ DS|>2||>2| _I_ D|| _R_ DS(on)max 

Rev. 2.4 

2015-06-24 

page 5 

**IPD110N12N3 G IPS110N12N3 G** 

## **9 Drain-source on-state resistance** 

_R_ DS(on)=f( _T_ j); _I_ D=75 A; _V_ GS=10 V 

## **10 Typ. gate threshold voltage** 

_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS 

parameter: _I_ D 

**==> picture [482 x 645] intentionally omitted <==**

**----- Start of picture text -----**<br>
25 4<br>3.5<br>20<br>830 µA<br>3<br>83 µA<br>2.5<br>15<br>98 %<br>2<br>typ<br>10<br>1.5<br>1<br>5<br>0.5<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [ ° C] T j [ ° C]<br>11 Typ. capacitances 12 Forward characteristics of reverse diode<br>C  =f( V  DS);  V  GS=0 V;  f  =1 MHz I  F=f( V  SD)<br>parameter:  T  j<br>10 [4] 10 [3]<br>Ciss 25 °C<br>175 °C 175 °C, 98%<br>10 [3] 10 [2]<br>Coss<br>25 °C, 98%<br>10 [2] 10 [1]<br>Crss<br>10 [1] Sf 10 [0]<br>0 20 40 60 80 100 0 0.5 1 1.5 2<br>V DS [V] V SD [V]<br>Rev. 2.4 page 6 2015-06-24<br>]<br>Ω<br> [m  [V]<br>DS(on) GS(th)<br>R V<br>C  [pF]  [A] I F<br>**----- End of picture text -----**<br>


Rev. 2.4 

**IPD110N12N3 G IPS110N12N3 G** 

## **13 Avalanche characteristics** 

_I_ AS=f( _t_ AV); _R_ GS=25 Ω 

parameter: _T_ j(start) 

## **14 Typ. gate charge** 

_V_ GS=f( _Q_ gate); _I_ D=67 A pulsed parameter: _V_ DD 

**==> picture [482 x 643] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [3] 10<br>96 V<br>8<br>60 V<br>10 [2] 24 V<br>6<br>25 °C<br>100 °C 4<br>150 °C<br>10 [1]<br>2<br>10 [0] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50<br>t AV [µs] Q gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V  BR(DSS)=f( T  j);  I  D=1 mA<br>135<br>V GS<br>130 Q g<br>125<br>120<br>V<br>gs(th)<br>115<br>110<br>Q  g(th) Q  sw Q gate<br>105 Q  gs Q  gd<br>-60 a -20 20 60 100 la 140 180<br>T j [ ° C]<br>Rev. 2.4 2015-06-24<br>[A]  [V]<br>I AS V GS<br> [V]<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Rev. 2.4 

page 7 

**IPD110N12N3 G IPS110N12N3 G** 

## **PG-TO-251SL : Outline** 

Rev. 2.4 

page 8 

2015-06-24 

**IPD110N12N3 G IPS110N12N3 G** 

## **PG-TO252-3: Outline** 

Rev. 2.4 

page 9 

2015-06-24 

IPD_S110N12N3 G 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.4|2015-07-16|Update VGS(th) and package outline TO252-3|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

11 



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