# Power MOSFET, N Channel, 80 V, 129 A, 3400 µohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:4134244/)

**URL**: https://novapart.co/products/IPD040N08NF2SATMA1/power-mosfet-n-channel-80-v-129-a-3400-ohm-to-252
**SKU**: IPD040N08NF2SATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6700
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | StronglRFET Series |
| Qualification | - |
| Power Dissipation | 150W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 129A |
| Drain Source On State Resistance | 3400µohm |
| Gate Source Threshold Voltage Max | 3.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4134244/)

**IPD040N08NF2S** ES Giineon 

## **MOSFET StrongIRFET[TM]** 

## **Features** 

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**----- Start of picture text -----**<br>
DPAK<br>tab<br>2<br>1<br>3<br>**----- End of picture text -----**<br>


|**Parameter**<br>~~Table~~<br>~~1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|80|V|
|_R_DS(on),max|4.0|mΩ|
|_I_D|129|A|
|_Q_oss|65|nC|
|_Q_G|54|nC|



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Drain<br>Pin 2, Tab<br>Gate<br>Pin 1<br>Source<br>Pin 3<br>**----- End of picture text -----**<br>


Type **Package Marking** ~~/ Ordering Code Related Links~~ IPD040N08NF2S PG-TO252-3 040N08NS - 

Final Data Sheet 

1 

**StrongIRFET[TM] �2�Power-Transistor IPD040N08NF2S** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

2 

Rev.�2.2,��2022-10-10 

**StrongIRFET[TM] �2�Power-Transistor IPD040N08NF2S** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-<br>-<br>-|-<br>-<br>-<br>-|129<br>98<br>82<br>20|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=6V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50°C/W2)|
|Pulsed drain current3)|_I_D,pulse|-|-|516|A|_T_C=25°C|
|Avalanche energy, single pulse4)|_E_AS|-|-|112|mJ|_I_D=100A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|150<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50°C/W2)|
|Operatingand storage temperature|_T_j,_T_stg|-55|-|175|°C|-|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|1.0|°C/W|-|
|Thermal resistance, junction - ambient,<br>6 cm² cooling area2)|_R_thJA|-|-|50|°C/W|-|
|Thermal resistance, junction - ambient,<br>minimal footprint|_R_thJA|-|-|75|°C/W|-|



> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 

> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 3) See Diagram 3 for more detailed information 

> 4) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.2,��2022-10-10 

**StrongIRFET[TM] �2�Power-Transistor IPD040N08NF2S** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|80|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.2|3.0|3.8|V|_V_DS=_V_GS,_I_D=85µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=80V,_V_GS=0V,_T_j=25°C<br>_V_DS=80V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|3.4<br>4.4|4.0<br>5.7|mΩ|_V_GS=10V,_I_D=70A<br>_V_GS=6V,_I_D=35A|
|Gate resistance|_R_G|-|1.9|-|Ω|-|
|Transconductance1)|_g_fs|60|-|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=70A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|3800|-|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Output capacitance|_C_oss|-|620|-|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|29|-|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|14|-|ns|_V_DD=40V,_V_GS=10V,_I_D=70A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|54|-|ns|_V_DD=40V,_V_GS=10V,_I_D=70A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|28|-|ns|_V_DD=40V,_V_GS=10V,_I_D=70A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|13|-|ns|_V_DD=40V,_V_GS=10V,_I_D=70A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|18.3|-|nC|_V_DD=40V,_I_D=70A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|11.4|-|nC|_V_DD=40V,_I_D=70A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|11.8|-|nC|_V_DD=40V,_I_D=70A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|18.7|-|nC|_V_DD=40V,_I_D=70A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|54|81|nC|_V_DD=40V,_I_D=70A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.8|-|V|_V_DD=40V,_I_D=70A,_V_GS=0to10V|
|Output charge|_Q_oss|-|65|-|nC|_V_DS=40V,_V_GS=0V|



> 1) Defined by design. Not subject to production test. 

> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet 

Rev.�2.2,��2022-10-10 

4 

**StrongIRFET[TM] �2�Power-Transistor IPD040N08NF2S** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|103|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|516|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.92|1.2|V|_V_GS=0V,_I_F=70A,_T_j=25°C|
|Reverse recoverytime|_t_rr|-|33|-|ns|_V_R=40V,_I_F=70A,d_i_F/d_t_=500A/µs|
|Reverse recoverycharge|_Q_rr|-|189|-|nC|_V_R=40V,_I_F=70A,d_i_F/d_t_=500A/µs|



Final Data Sheet 

Rev.�2.2,��2022-10-10 

5 

**StrongIRFET[TM] IPD040N08NF2S** 

**==> picture [539 x 284] intentionally omitted <==**

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160 ee ee eee 140 Pf<br>140<br>oA —_}At—_}-—+—+—+tt tt 120 —Ff S—f—_+ _+_ + + 4<br>4) Fee<br>120<br>ae 100 ee<br>Sew SF<br>100 PF {| [| Nf ff eePoRE<br>Pt 80 NN<br>= | Af | [| | oN<br>80<br>Nee i<br>60<br>60 IN ——<br>PF [ | [| [| N [| | a<br>40<br>40<br>ene ——<br>PP EN 20 EY<br>20 es|<br>0 a ee ee ee ee ee NN 0 a<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C [°C] T C [°C]<br>0 P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br>


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10 [3] 10 [1]<br>1 µs<br>single pulse<br>10 µs 0.01<br>F HS 0.02 ee<br>0.05<br>10 [2] TR NTT NS SNOT | 0.1 YE TTT<br>1 ms 0.2<br>100 µs 10 [0] 0.5<br>YA Z| \N\ \ coE S Co AaeeT<br>10 [1]<br>NE _ Heit egam C1<br>eR SCRE SLL 10 [-1] IE<br>DC<br>10 ms<br>EHH | SSN Seeeiiitreer Smet eee emetiit<br>10 [0] Nell eeeeA<br>a A OO OO Ls r| U fi<br>Nt 10 [-2] 0<br>10 [-1] tT TTT NNT SAH HHEEE<br>—=__-.. ==... aes =A etEe<br>a a ee ee ee<br>SSS | |<br>10 [-2] EEE Th 10 [-3] UUTINIE CATIA CUTIE ETE ETI EAT<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

## **StrongIRFET[TM] IPD040N08NF2S** 

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600 PT Tt tet te tT YA TAP tT tt tt tt<br>| | | tt 10 V Tif 8 V Pit | tT tt<br>rt ttt tT tty YT tT tT tT tT Tt TT<br>500 LtLt |tttT |tT |te tT| TAYYAY Tt| eee<br>Lt | | tT PTAA ye 7 V<br>400 Pt| | tT| tT| || tTtT AyyAYtAtT tt tt<br>Lt tT | | vA AT Tt tt<br>= Lr | | | tT 7/7 tT tt ttt th TT<br><x 300 |Ltta L t]t| ||| ||TAA| TAVAVetAAT TT tT| tTtt tttt ttttT TTttTT<br>Oe a eee 6 V<br>200 ILi[|| |Y7A7A7Ys| Ai||}eee|}| tti| tt| ttttyttttT eee<br>|| MA | | i i tt ty tt<br>D/Aeee<br>100 LipDD i eee| | tt tt | ee<br>w/e 5 V<br>|Z<br>4.5 V<br>0 FOTELLL ttt ttt<br>0 1 2 3 4 5<br>V DS [V]<br>I D=f( V DS ), T j =25 °C; parameter: V GS<br>I D<br>**----- End of picture text -----**<br>


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Final Data Sheet 

7 

**StrongIRFET[TM] IPD040N08NF2S** 

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2.0 | | | | | | | [| | | yt 4.0 Pt; | | | ft ft tf lf<br>3.5<br>a REP Pry |<br>1.6 Oe a Se<br>OO a ;<br>3.0<br>s |... 850 µA<br>ew AE ERS<br>itA 2.5 ee<br>8 1.2 eN<br>= FPePPPePrLrTyYyrTrerey ONS<br>CPTPEPPEPEPITLYEELEEELEL Ie NIN<br>2.0 85 µA<br>Seei ybrreoP PpPo ~INCNONIN I<br>0.8<br>E5 | | PT | | | tT ft ht ht 1.5 PTTTERE]<br>|<br>bee ee<br>es<br>a 1.0 Pt | | | | | ft | tf<br>0.4 a OO FPPPpePprperprprere.<br>F | | {| [ | [| [| | [ | | 0.5 PET TTT<br>es ee<br>es<br>0.0 es a 0.0 Pt | | tt | ft tl tt<br>-75 -50 -25 0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS I D<br>10 [4] 10 [3]<br>25 °C<br>175 °C<br>ee Pee C TT<br>NI] | Pree ff ff LETTE EET TT TEE EEE err<br>Ciss<br>PMTN\EEE TEE TTT PELLETAe<br>ELEN ELE ELLE7<br>10 [3] 10 [2]<br>a eS eo ee BERR<br>ge& PERSE fex ee[<br>PENSE Coss TTT TT<br>-ELNELL EEE PELLET TEE<br>10 [2] iM 10 [1] A A A<br>eee eee See ee<br>pf tt | tT PAA tT PT tt BERR ee<br>PT TTT Tye eee PELLET<br>Crss<br>10 [1] PELEEELL EEE LEE 10 [0] TELLEEE EEE<br>0 10 20 30 40 50 60 70 80 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>GS(th)<br>V<br>DS(on)<br>R<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**StrongIRFET[TM] IPD040N08NF2S** 

**==> picture [526 x 634] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [3] 10<br>16 V<br>40 V<br>EE a Ee | 64 V J<br>a a eeS y<br>8 LETT / A<br>a  TT ETT TT TTT TT TT TT fae TT<br>10 [2]<br>SSS aa | SOSSSSRRRRG00R0000009 740000008<br>es eSSa eS lSeee eee POET a lPT<br>PTI TANTRA 25 °C 6 PCEEEEEEL EEE<br>2a 10 [1] COMICON< 100 °C NCNI NG |= Ge<br>sss as ee as pl e<br>150 °C 4<br>Sea fe<br>10 [0]<br>PR A A 2 COO<br>Cr er LIAL EEE<br>ee ell WT TTA AEE EE<br>ERIN ETA EERIE EET Pe<br>10 [-1] 0<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50 60<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω  ; parameter: T j,start V GS=f( Q gate ), I D =70A pulsed, T j =25 °C; parameter: V DD<br>Diagram Gate charge waveforms<br>88<br>OO OO<br>a<br>a OO OO<br>a Ves<br>86 eS<br>a Q<br>a A 9<br>Ss<br>esA<br>sOOA<br>84 es<br>a OO<br>aAOA<br>Siaa47<br>82<br>a<br>aOO<br>sO A0 2<br>GO<br>a 72<br>80<br>2<br>2<br>eS<br>A<br>a7<br>78<br>eC2A OO Romc | | Qay Q gate<br>SO<br>76 a OO Qou<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**StrongIRFET[TM] �2�Power-Transistor IPD040N08NF2S** 

**==> picture [120 x 53] intentionally omitted <==**

## **5�����Package�Outlines** 

|PACKAGE - GROU<br>NUMBER:|**PG-TO252-3-U01**<br>P|**PG-TO252-3-U01**<br>P|
|---|---|---|
|**DIMENSIONS**|**MILLIMETERS**||
||MIN.|MAX.|
|**A**|2.18|2.39|
|**A1**|0.00|0.13|
|**b**|0.64|0.89|
|**b1**|0.76|1.14|
|**c**|0.46|0.61|
|**c1**|0.40|0.89|
|**D**|5.97|6.22|
|**D1**|5.21|---|
|**E**|6.35|6.73|
|**E1**|4.32|---|
|**e**|2.29||
|**e1**|4.58||
|**N**|3||
|**H**|9.40|10.41|
|**L**|1.40|1.78|
|**L1**|0.89|1.27|
|**L2**|0.50|1.02|



## **Figure�1�����Outline�PG-TO252-3,�dimensions�in�mm** 

Final Data Sheet 

10 

Rev.�2.2,��2022-10-10 

## **StrongIRFET[TM] IPD040N08NF2S** 

## IPD040N08NF2S 

## Previous Revision 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2022-02-08|Release of final version|
|2.1|2022-06-22|Update Diagram 15|
|2.2|2022-10-10|Update package outline drawing|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **Warnings** 

Final Data Sheet 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/IPD040N08NF2SATMA1/power-mosfet-n-channel-80-v-129-a-3400-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipd040n08nf2satma1/mosfet-n-ch-80v-129a-to-252/dp/4134244)
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