# Power MOSFET, N Channel, 40 V, 50 A, 5500 µohm, TDSON, Surface Mount

![Product image](https://novapart.co/image/farnell:2781077/)

**URL**: https://novapart.co/products/IPC50N04S5L5R5ATMA1/power-mosfet-n-channel-40-v-50-a-5500-ohm-tdson
**SKU**: IPC50N04S5L5R5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3580
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0044ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 |
| Qualification | AEC-Q101 |
| Power Dissipation | 42W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TDSON |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 50A |
| Drain Source On State Resistance | 5500µohm |
| Gate Source Threshold Voltage Max | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781077/)

**OptiMOS[™] -5 Power-Transistor** 

|**Product Summary**|||
|---|---|---|
||||
|_V_DS|40|V|
||||
|_R_DS(on),max|5.5|mW|
||||
|_I_D|50|A|



## **Features** 

- OptiMOS™ - power MOSFET for automotive applications 

PG-TDSON-8-33 

- N-channel - Enhancement mode - Logic Level 

- AEC Q101 qualified 

- MSL1 up to 260°C peak reflow 

- 175°C operating temperature 

- Green Product (RoHS compliant) 

**==> picture [64 x 73] intentionally omitted <==**

**----- Start of picture text -----**<br>
WY<br>1<br>1<br>**----- End of picture text -----**<br>


- 100% Avalanche tested 

||||
|---|---|---|
|Type|Package|Marking|
||||
|IPC50N04S5L-5R5|PG-TDSON-8-33|5N04L5R5|



**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified 

|**Maximum ratings,**at_T_j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|||
|---|---|---|---|---|
|**Parameter**|**Symbol**<br>~~eee~~|**Conditions**<br>~~eee~~|**Unit**<br>**Value**<br>~~eee~~|**Unit**|
|Continuous drain current1)|_I_D<br>~~eee~~<br>~~a~~|_T_C=25 °C,_V_GS=10 V<br>~~eee~~|50<br>A<br> <br>42<br>200<br>~~eee~~<br>~~ee~~<br>~~ee~~|A|
|||_T_C=100°C,_V_GS=10V2) <br>~~eee~~<br>~~ee ee~~|||
|Pulsed drain current2)|_I_D,pulse<br>~~eee~~<br>~~a~~<br>~~a~~|_T_C=25°C<br>~~eee~~<br>~~ee ee~~<br>~~ee~~|||
|Avalanche energy, single pulse2)|_E_AS<br>~~a~~<br>~~a~~<br>~~a~~|_I_D=25A<br>~~ee ee~~<br>~~ee~~<br>~~ee~~|30<br>mJ<br>~~ee~~<br>~~ee~~<br>~~ee~~|mJ|
|Avalanche current, single pulse|_I AS_<br>~~a~~<br>~~a~~<br>~~ee~~|_-_<br>~~ee~~<br>~~ee~~<br>~~ee~~|50<br>A<br>~~ee~~<br>~~ee~~<br>~~ee~~|A|
|Gate source voltage|_V_GS<br>~~a~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|±16<br>V<br>~~ee~~<br>~~ee~~|V|
|Power dissipation|_P_tot<br>~~ee~~<br>~~ee~~<br>~~ee~~|_T_C=25°C<br>~~ee~~<br>~~ee~~<br>~~ee~~|42<br>W<br>~~ee~~<br>~~ee~~<br>~~ee~~|W|
|Operating and storage temperature|_T_j,_T_stg<br>~~ee~~|-<br>~~ee~~|-55 ... +175<br>°C<br>~~ee~~|°C|



Rev. 1.2 

page 1 

2016-12-06 

**Parameter Symbol Conditions Values Unit min. typ. max.** ~~ee~~ **Thermal characteristics[2)]** Thermal resistance, junction - case _R_ thJC - - - 3.6 K/W Thermal resistance, junction - _R_ thJA 6 cm[2] cooling area[3)] - - 50 ambient ~~Ee~~ 

**Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified 

## **Static characteristics** 

|**Static characteristics**|||||||
|---|---|---|---|---|---|---|
|Drain-source breakdown voltage|_V_(BR)DSS|_V_GS=0V,_I_D= 1mA|40|-|-|V|
|Gate threshold voltage|_V_GS(th)|_V_DS=_V_GS,_I_D=13µA|1.2|1.6|2.0||
|Zero gate voltage drain current|_I_DSS|_V_DS=40V,_V_GS=0V,<br>_T_j=25°C|-|-|1|µA|
|||_V_DS=40V,_V_GS=0V,<br>_T_j=125°C2)|-|-|100||
|Gate-source leakage current|_I_GSS|_V_GS=16V,_V_DS=0V|-|-|100|nA|
|Drain-source on-state resistance|_R_DS(on)|_V_GS=4.5V,_I_D=25A|-|5.7|7.9|mW|
|||_V_GS=10V,_I_D=25A|-|4.4|5.5||



Rev. 1.2 

page 2 

2016-12-06 

|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~|**Parameter**<br>**Symbol**<br>**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~|
|---|---|---|---|---|---|---|
|**Dynamic characteristics2)**|||||||
|Input capacitance|_C_iss||-|930|1209|pF|
|Output capacitance|_C_oss|_V_GS=0V,_V_DS=25V,<br>_f_=1MHz|-|210|279||
|Reverse transfer capacitance|Crss||-|14|21||
|Turn-on delay time|_t_d(on)||-|2|-|ns|
|Rise time|_t_r|_V_DD=20V,_V_GS=10V,|-|2|-||
|Turn-off delay time|_t_d(off)|_I_D=50A,_R_G=3.5W|-|8|-||
|Fall time|_t_f||-|6|-||
|**Gate Charge Characteristics2)**|||||||
|Gate to source charge|_Q_gs||-|2.7|3.6|nC|
|Gate to drain charge|_Q_gd|_V_DD=32V,_I_D=50A,|-|3.6|5.4||
|Gate charge total|_Q_g|_V_GS=0 to 10V|-|17|23||
|Gate plateau voltage|_V_plateau||-|2.9|-|V|
|**Reverse Diode**|||||||
|Diode continous forward current2)|_I_S||-|-|50|A|
|||_T_C=25°C|||||
|Diode pulse current2)|_I_S,pulse||-|-|200||
|Diode forward voltage|_V_SD|_V_GS=0V,_I_F=25A,<br>_T_j=25°C|-|0.8|1.1|V|
|Reverse recovery time2)|_t_rr|_V_R=20V,_I_F=50A,<br>d_i_F/d_t_=100A/µs|-|30|-|ns|
|Reverse recovery charge2)|_Q_rr||-|22|-|nC|



> 1) Current is limited by package; with an _R_ thJC = 3.6K/W the chip is able to carry 60 A at 25°C. 

2) The parameter is not subject to production test- verified by design/characterization. 

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

Rev. 1.2 

page 3 

2016-12-06 

## **1 Power dissipation** 

## **2 Drain current** 

_P_ tot = f(= f( _T_ C); ); _V_ GS = 10 V = 10 V 

**==> picture [465 x 653] intentionally omitted <==**

**----- Start of picture text -----**<br>
 tot = f(= f( T  C); );  V  GS = 10 V = 10 V I  D = f( T  C);  V  GS = 10 V<br>50 60<br>50<br>40<br>40<br>30<br>30<br>20<br>20<br>10<br>10<br>0 LL 0<br>0 50 100 150 200 0 50 100 150 200<br>T C [°C]  T C [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>= f( V  DS); );  T  C = 25 °C; = 25 °C;  D  = 0 Z  thJC = f( t  p)<br>parameter:  t  p parameter:  D  = t  p/ T<br>1000 10 [1 ]<br>0.5<br>1 µs<br>100 10 [0 ]<br>10 µs<br>0.1<br>0.01<br>100 µs<br>0.05<br>10 10 [-1 ]<br>150 µs<br>single pulse<br>1 10 [-2 ]<br>0.1 1 10 100<br>V DS [V]  t p [s]<br> [W]<br> [A]<br>P tot I D<br> [A]   [K/W]<br>I D<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

_I_ D = f( _V_ DS); ); _T_ C = 25 °C; = 25 °C; _D_ = 0 parameter: _t_ p 

Rev. 1.2 

page 4 

2016-12-06 

## **5 Typ. output characteristics** 

_I_ D = f( _V_ DS); _T_ j = 25 °C 

parameter: _V_ GS 

## **6 Typ. drain-source on-state resistance** 

_R_ DS(on) = f( _I_ D); _T_ j = 25 °C parameter: _V_ GS 

**==> picture [227 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>10 V<br>150<br>3.5 V<br>100<br>50 3 V<br>2.75 V<br>2.5 V<br>0<br>0 1 2 3<br>V DS [V]<br> [A]<br>I D<br>**----- End of picture text -----**<br>


**==> picture [227 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
25<br>2.5 V<br>20<br>2.75 V<br>15<br>3 V<br>3.5 V<br>10<br>5<br>10 V<br>0<br>0 40 80 120 160 200<br>I D [A]<br>]<br>W<br> [m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **7 Typ. transfer characteristics** 

_I_ D = f( _V_ GS); _V_ DS = 6V 

**8 Typ. drain-source on-state resistance** _R_ DS(on) = f( _T_ j); _I_ D = 25 A; _V_ GS = 10 V 

parameter: _T_ j 

**==> picture [464 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>9.5<br>160 8.5<br>7.5<br>120<br>6.5<br>80<br>5.5<br>4.5<br>40<br>175 °C<br>3.5<br>-55 °C<br>25 °C<br>0<br>2.5<br>1.5 2 2.5 3 3.5 4 4.5<br>-60 -20 20 60 100 140 180<br>V GS [V]  T j [°C]<br>]<br>W<br> [A]  [m<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


Rev. 1.2 

2016-12-06 

page 5 

**==> picture [476 x 717] intentionally omitted <==**

**----- Start of picture text -----**<br>
                 IPC50N04S5L-5R5<br>9 Typ. gate threshold voltage 10 Typ. capacitances<br>V  GS(th) = f( T  j);  V  GS =  V  DS C  = f( V  DS);  V  GS = 0 V;  f  = 1 MHz<br>parameter:  I  D<br>2 10 [4 ]<br>1.5 130 µA<br>10 [3 ] Ciss<br>13 µA<br>Coss<br>1<br>10 [2 ]<br>0.5<br>Crss<br>NS 0 10 [1]<br>-60 -20 20 60 100 140 180 0 10 20 30<br>T j [°C]  V DS [V]<br>11 Typical forward diode characteristicis 12 Avalanche characteristics<br>IF = f(VSD) I  A S= f( t  AV)<br>parameter:  T  j parameter: Tj(start)<br>10 [3 ] 100<br>10 [2 ]<br>25 °C<br>10<br>100 °C<br>175 °C  25 °C<br>10 [1 ] 150 °C<br>10 [0 ] rant 1<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 10 100 1000<br>V SD [V]  t AV [µs]<br> [pF]<br>C<br> [V]<br>GS(th)<br>V<br> [A]   [A]<br>I F I AV<br>**----- End of picture text -----**<br>


Rev. 1.2 

page 6 

2016-12-06 

**13 Avalanche energy** 

_E_ AS = f( _T_ j) 

## **14 Drain-source breakdown voltage** 

_V_ BR(DSS) = f( _T_ j); _I_ D = 1 mA 

**==> picture [469 x 646] intentionally omitted <==**

**----- Start of picture text -----**<br>
70 46<br>60<br>44<br>12.5 A<br>50<br>42<br>40<br>30<br>40<br>25 A<br>20<br>38<br>50 A<br>10<br>0 36<br>25 75 125 175 -60 -20 20 60 100 140 180<br>T j [°C]  T j [°C]<br>15 Typ. gate charge 16 Gate charge waveforms<br>V  GS = f( Q  gate);  I  D = 50 A pulsed<br>parameter:  V  DD<br>10<br>V  GS<br>9<br>Q g<br>;<br>8<br>8 V<br>7 32 V<br>6<br>5<br>4 V  gs(th)<br>3 W/<br>2<br>Q  g(th) Q  sw Q gate<br>1<br>0 a vi Q  gs Q  gd<br>0 4 8 12 16<br>Q gate [nC]<br>Rev. 1.2 page 7<br> [V]<br> [mJ]<br>AS<br>E BR(DSS)<br>V<br> [V]<br>GS<br>V<br>**----- End of picture text -----**<br>


Rev. 1.2 

2016-12-06 

## **Published by Infineon Technologies AG 81726 Munich, Germany** 

## **© Infineon Technologies AG 2016 All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. 

For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev. 1.2 

page 8 

2016-12-06 

**IPC50N04S5L-5R5** 

Revision History 

|**Version**|Date|Changes|
|---|---|---|
|Revision 1.0|14.03.2016|Final Data Sheet|
|Revision 1.1|07.09.2016|Detailed package name added|
|Revision 1.2|06.12.2016|Update the IDSS for Tj=25°C|



Rev. 1.2 

page 9 

2016-12-06 



## Links

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- [Supplier page](https://es.farnell.com/infineon/ipc50n04s5l5r5atma1/mosfet-aec-q101-n-ch-40v-tdson/dp/2781077)
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