# Power MOSFET, N Channel, 650 V, 14 A, 0.159 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3625305/)

**URL**: https://novapart.co/products/IPBE65R190CFD7AATMA1/power-mosfet-n-channel-650-v-14-a-0159-ohm-to-263
**SKU**: IPBE65R190CFD7AATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1700
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS CFD7A SJ |
| Qualification | AEC-Q101 |
| Power Dissipation | 77W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 14A |
| Drain Source On State Resistance | 0.159ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3625305/)

**IPBE65R190CFD7A** 

## **MOSFET** 

## **Features** 

rr DS(on)*Qg andR DS(on)*Eoss 

## **Benefits** ¢ Best-in-class R 

DS(on) 

## **Benefits** 

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tab<br>7<br>1 G  2 3 4 YY Se @<br>5 6 7<br>Drain<br>tab<br>Gate *1<br>Pin 1 *2<br>Driver<br>ae Power Source<br>*1: Internal body diode*2: Integrated ESD diode Pin 3-7Source Pin 2<br>**----- End of picture text -----**<br>


|**Parameter**|**Value**|**Value**|**Unit**||||
|---|---|---|---|---|---|---|
|VDS|650||V||||
|RDS(on),max|190||mΩ||||
|Qg,typ|28||nC||||
|ID,pulse|55||A||||
|Eoss @400V|3.7||µJ||||
|Bodydiode diF/dt|1300||A/µs||||
||||||||
|||**Package**||**Marking**|||
|IPBE65R190CFD7A||PG-TO263-7-11||65A190F7||see Appendix A|



Final Data Sheet 

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**650V�CoolMOSª�CFD7A�SJ�Power�Device IPBE65R190CFD7A** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 

Final Data Sheet 

2 

Rev.�2.0,��2020-08-27 

**650V�CoolMOSª�CFD7A�SJ�Power�Device IPBE65R190CFD7A** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|14<br>9|A|TC=25°C<br>TC=100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|55|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|64|mJ|ID=3.6A; VDD=50V; see table 10|
|Avalanche current, single pulse|_I_AS|-|-|3.6|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|120|V/ns|_V_DS=0...400V|
|Gate source voltage(static)|_V_GS|-20|-|20|V|static;|
|Gate source voltage(dynamic)|_V_GSk,pulse|-30|-|30|V|frepetition<=100kHz, tpulse<= 2ns|
|Power dissipation|_P_tot|-|-|77|W|_T_C=25°C|
|Storage temperature|_T_stg|-55|-|150|°C|-|
|Operating junction temperature|_T_j|-40|-|150|°C|-|
|Mountingtorque|-|-|-|-|Ncm|-|
|Continuous diode forward current|_I_S|-|-|14|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|55|A|_T_C=25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|70|V/ns|_V_DS=0...400V,_I_SD<=6.4A,_T_j=25°C<br>see table 8|
|Maximum diode commutation speed|diF/dt|-|-|1300|A/µs|_V_DS=0...400V,_I_SD<=6.4A,_T_j=25°C<br>see table 8|



> 1) Limited by Tj max. 

> 2) Pulse width tp limited by Tj,max 

3) Identical low side and high side switch with identical RG 

Final Data Sheet 

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**650V�CoolMOSª�CFD7A�SJ�Power�Device IPBE65R190CFD7A** 

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## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction  - case|_R_thJC|-|-|1.62|°C/W|-|
|Soldering temperature, reflow soldering<br>allowed|_T_sold|-|-|260|°C|reflow MSL1|



Final Data Sheet 

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4 

**650V�CoolMOSª�CFD7A�SJ�Power�Device IPBE65R190CFD7A** 

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## **3�����Electrical�characteristics** 

at� _T_ j=25°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage1)|_V_(BR)DSS|650|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage2)|_V_(GS)th|3.5|4|4.5|V|_V_DS=_V_GS,_I_D=0.32mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>25|1<br>-|µA|_V_DS=650V,_V_GS=0V,_T_j=25°C<br>_V_DS=650V,_V_GS=0V,_T_j=150°C|
|Gate-source leakage current incl.<br>protection diode|_I_GSS|-|-|1|µA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.159<br>0.355|0.190<br>-|Ω|_V_GS=10V,_I_D=6.4A,_T_j=25°C<br>_V_GS=10V,_I_D=6.4A,_T_j=150°C|
|Gate resistance|_R_G|-|10.0|-|Ω|_f_=250kHz,opendrain|



## **Table�5�����Dynamic�characteristics** 

External parasitic elements (PCB layout) influence switching behavior significantly. Stray inductances and coupling capacitances must be minimized. 

For layout recommendations please use provided application notes or contact Infineon sales office. 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|1291|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Output capacitance|_C_oss|-|20|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Effective output capacitance, energy<br>related3)|_C_o(er)|-|46|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance, time<br>related4)|_C_o(tr)|-|479|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|19|-|ns|_V_DD=400V,_V_GS=13V,_I_D=6.4A,<br>_R_G=10.2Ω;seetable9|
|Rise time|_t_r|-|4|-|ns|_V_DD=400V,_V_GS=13V,_I_D=6.4A,<br>_R_G=10.2Ω;seetable9|
|Turn-off delay time|_t_d(off)|-|86|-|ns|_V_DD=400V,_V_GS=13V,_I_D=6.4A,<br>_R_G=10.2Ω;seetable9|
|Fall time|_t_f|-|5|-|ns|_V_DD=400V,_V_GS=13V,_I_D=6.4A,<br>_R_G=10.2Ω;seetable9|



> 1) For applications with applied blocking voltage > 475 V, we recommend to evaluate the impact of the cosmic radiation effect in early design phase. For assessment, please contact local Infineon sales office. 

> 2) We do not recommend using the CoolMOS mentioned in this datasheet to operate in “linear mode”. For assessment of potential “linear mode”, please contact Infineon sales office. 

> 3) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 4) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

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**650V�CoolMOSª�CFD7A�SJ�Power�Device IPBE65R190CFD7A** 

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## **Table�6�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|7|-|nC|_V_DD=400V,_I_D=6.4A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|9|-|nC|_V_DD=400V,_I_D=6.4A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|28|-|nC|_V_DD=400V,_I_D=6.4A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.7|-|V|_V_DD=400V,_I_D=6.4A,_V_GS=0to10V|



## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|1.1|-|V|_V_GS=0V,_I_F=6.4A,_T_j=25°C|
|Reverse recovery time|_t_rr|-|97|-|ns|_V_R=400V,_I_F=6.4A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Reverse recovery charge|_Q_rr|-|0.46|-|µC|_V_R=400V,_I_F=6.4A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Peak reverse recovery current|_I_rrm|-|8.4|-|A|_V_R=400V,_I_F=6.4A,d_i_F/d_t_=100A/µs;<br>see table 8|



Final Data Sheet 

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**IPBE65R190CFD7A** 

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**----- Start of picture text -----**<br>
80 10 [2]<br>1 µs<br>a EHH ARS P CE<br>rf... NONI NUTT<br>10 [1]<br>60 PEN TN SS 10 µs<br>es ee ed eof tt ANE AN<br>10 [0]<br>ee ee ee | NN Il<br>100 µs<br>40 NT eeINN<br>i 10 [-1] I NANT<br>1 ms<br>20 a ee ee eee i NL<br>oN 10 [-2] | LTTENT<br>ee ee ee ee<br>0 a ee 10 [-3] eeeell<br>0 25 50 75 100 125 150 10 [0] 10 [1] 10 [2] 10 [3]<br>T C [°C] V DS Vv]<br>F P tot=f( T C) s I D=f( V DS T C £25 °C D =O;parameters t p<br>10 [2] 10 [1]<br>1 µs<br>10 [1] H R N | SECS Scr<br>CIN NUTS PT Ta<br>SE<br>= SSS a SeEe PLM EL iee e<br>10 µs<br>10 [0]<br>0.5<br>10 [0] AN Ill ee series Ee EE<br>0.2<br>100 µs 0.1<br>cE 10 [-1] NNRSS AG 2 Sa 0.05 ttt<br>Ill TEA4<br>10 [-1] 0.02<br>10 [-2] -—EHECEHH 1 ms \hl | aecTE 0.01 | TTT T TitiaTt Tit aanfT Tr<br>single pulse<br>EEE et ee ee ||<br>Th<br>10 [-3] 10 [-2]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]<br>V DS Vv] t p [s]<br>I D=f( V DS T C D t p Z thJC t P D=t p/ T<br>P tot I D<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPBE65R190CFD7A** 

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Final Data Sheet 

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**IPBE65R190CFD7A** 

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90 12<br>ee ee UATE EEE<br>Pt | | | | | | | TT Va<br>25 °C<br>75 10<br>a fy<br>60 8 120 V 400 V<br>ee ee je<br>45 6<br>150 °C<br>ee ee ee ee<br>a ca ATTY<br>30 4<br>eee ee /<br>15 2<br>Pt | | | YA | TT Tt :<br>PTY Fe AL UE EEEEEE<br>0 0<br>0 2 4 6 8 10 12 0 5 10 15 20 25 30 35<br>V GS [Vv] Q gate [nC]<br>I D=f( V GS V DS T j V GS=f( Q gate I D V DD<br>10 [2] 70<br>——_————_S |S<br>60<br>a a<br>ttt tt et ee \—<br>50<br>ELLE | bee ———<br>10 [1]<br>=e<br>oe<br>40<br>= [| —<br>PEEP 125 °C UPATT 25 °C Tr 30 —hE<br>10 [0] SS SS Se S$<br>20<br>eePt tT tT tT ey PE ET 10 eeNOeee<br>a Di<br>10 [-1] 0<br>0.0 0.3 0.6 0.9 1.2 1.5 25 50 75 100 125 150<br>V SD [V] T j [°C]<br>I F=f( V SD T j E AS=f( T j I D V DD<br>I D V GS<br>I F AS<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPBE65R190CFD7A** 

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750 10 [5]<br>10 [4]<br>720<br>Oe a NHSRSRSRSRERERRRRRE<br>Ciss<br>10 [3]<br>A = SSanneeeseage ===<br>690<br>10 [2]<br>de 2<br>660 Coss<br>Po) 10 [1] i \ | | | CeHNN_ L | | {| | {[ |<br>Crss<br>630<br>10 [0]<br>ZT ee<br>TA | | ff ft] ===<br>600 Y | | [| | | | | | 10 [-1] CrPPLE| | | | [— | tT TT 7 tT tT yt tT tT tT tT yy<br>-50 -25 0 25 50 75 100 125 150 0 100 200 300 400 500<br>T j [°C] V DS [V]<br>V BR(DSS)=f( T j I D C =f( V DS V GS f<br>C<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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5<br>4 PTT EEL LLY<br>3 P|] tl | |petZo / |<br>—zs || ||LeZ|<br>“2G<br>2<br>at<br>1<br>0<br>0 100 200 300 400 500<br>V DS [V]<br>Pe E oss = f (V DS )<br>oss<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

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## **IPBE65R190CFD7A** 

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**----- Start of picture text -----**<br>
Test circuit for diode characteristics Diode recovery waveform<br>V,1 y<br>R 1<br>g Vg feminineee So 7 7<br>$90 % Vps<br>r<br>V DS ayti dv/dt<br>t<br>R 2<br>g<br>dl- / dt } 10%Vie| 5<br>Qe 10% lm<br>I F<br>R 1 = R 2<br>g g<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>|<br>V DS<br>V GS V GS 10%<br>t d(on) t r t d(off) t f<br>a < + t on > + t off ><br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>C<br>¢<br>I D V DS<br>7<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**650V�CoolMOSª�CFD7A�SJ�Power�Device IPBE65R190CFD7A** 

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## **6�����Package�Outlines** 

|**A**<br>**DIMENSIONS**<br>**A1**|**A**<br>**DIMENSIONS**<br>**A1**|**A**<br>**DIMENSIONS**<br>**A1**|4.50<br>0.20<br>**MILLIMETERS**<br>MIN.<br>4.30<br>0.00<br>MAX.|4.50<br>0.20<br>**MILLIMETERS**<br>MIN.<br>4.30<br>0.00<br>MAX.|4.50<br>0.20<br>**MILLIMETERS**<br>MIN.<br>4.30<br>0.00<br>MAX.||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**A2**||2.30||2.50||||||||||||||||||||
||**b**<br>**b1**||0.50<br>0.00||0.70<br>0.15||||||||||||||||||||
||**c**||0.40||0.60||||||||||||||||||||
||**c1**||1.17||1.37||||||||||||||||||||
||**D**||9.05||9.45||||||||||||||||||||
||**D1**||7.30||7.50|||||||**DOCUMENT**||||||**NO.**|||||||
||**E**<br>**E1**||9.80<br>9.36||10.20<br>9.56|||||||**REVISION**<br>Z8B00189665|||||||||||||
||**E2**||0.00||0.30||||||||01||||||||||||
||**E3**||8.40||8.60||||||||||||||||||||
||**e**<br>**H**||1.27<br>15.00|||||||0||1<br>**SCALE**<br>**5:1**<br>2<br>3<br>4||||||||5mm|||||
||**L**||4.20||5.20||||||||||||||||||||
||**L1**||0.70||1.30||||||||||||||||||||
||**L2**||1.70||2.30|||**EUROPEAN PROJECTION**|||||||||||||||||
||**L3**|||2.70|||||||||||||||||||||
||**P**||0.35||0.55||||||||||||||||||||
||**Q**||4.02||4.22||||||||||||||||||||
||**S**<br>**R**||1.40<br>2.03||1.60<br>2.23|||||||**ISSUE DATE**|||||||||||||
||**THETA**||0.00°||8.00°||||||||20.09.2018||||||||||||



**Figure�1�����Outline�PG-TO263-7-11,�dimensions�in�mm** 

Final Data Sheet 

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Rev.�2.0,��2020-08-27 

**IPBE65R190CFD7A** 

- 

- 

- 

- 

Final Data Sheet 

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**IPBE65R190CFD7A** 

## IPBE65R190CFD7A 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2020-08-27|Release of final version|



## **Trademarks** 

## **Disclaimer** 

## **erratum@infineon.com** 

## **Information** 

## **Warnings** 

Final Data Sheet 

14 



## Links

- [View this product on Novapart](https://novapart.co/products/IPBE65R190CFD7AATMA1/power-mosfet-n-channel-650-v-14-a-0159-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipbe65r190cfd7aatma1/mosfet-n-ch-650v-14a-to-263/dp/3625305)
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