# Power MOSFET, N Channel, 600 V, 20.2 A, 0.17 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1860814/)

**URL**: https://novapart.co/products/IPB60R190C6ATMA1/power-mosfet-n-channel-600-v-202-a-017-ohm-to-263
**SKU**: IPB60R190C6ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1700
**Stock**: 50+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS |
| Qualification | - |
| Power Dissipation | 151W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 20.2A |
| Drain Source On State Resistance | 0.17ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1860814/)

## MOSFET 

IPx60R190C6 

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Rev. 2. 3<br>Final<br>**----- End of picture text -----**<br>


**IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6** 

## **600V CoolMOS** " **C6 Power Transistor** 

## **1 Description** 

CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. 

## **Features** 

- Extremely low losses due to very low FOM Rdson*Qg and Eoss 

- Very high commutation ruggedness 

- Easy to use/drive 

- JEDEC[1)] qualified, Pb-free plating, Halogen free 

## **Applications** 

PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. 

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**----- Start of picture text -----**<br>
drain<br>pin 2<br>gate<br>pin 1<br>source<br>pin 3<br>**----- End of picture text -----**<br>


_Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended._ 

**Table 1 Key Performance Parameters** 

|**Parameter**|**Value**|**Unit**|
|---|---|---|
|_V_DS @_T_j,max|650|V|
|_R_DS(on),max|0.19|!|
|_Q_g,typ|63|nC|
|_I_D,pulse|59|A|
|_E_oss@ 400V|5.2|µJ|
|Body diode d_i_/d_t_|500|A/µs|



a **Type / Ordering Code Package Marking Related Links** IPW60R190C6 PG-TO247 IFX C6 Product Brief ~~a~~ IPB60R190C6 PG-TO263 IFX C6 Portfolio ~~a~~ IPI60R190C6 PG-TO262 6R190C6 IFX CoolMOS Webpage ~~a~~ IPP60R190C6 PG-TO220 IFX Design tools IPA60R190C6 PG-TO220 FullPAK ee 

1) J-STD20 and JESD22 

Rev. 2.3 

Page 2 

2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R190C6** 

**Table of Contents** 

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## **Table of Contents** 

|**1**|**Description** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|---|---|
||**Table of Contents** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**2**|**Maximum ratings**<br>. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4|
|**3**|**Thermal characteristics** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**4**|**Electrical characteristics** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**5**|**Electrical characteristics diagrams**<br>. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
|**6**|**Test circuits** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|**7**|**Package outlines**<br>. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
|**8**|**Revision History** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19|



Rev. 2.3 

Page 3 

2018-02-26 

**600V CoolMOSTM C6 Power Transistor IPx60R190C6** 

## **Maximum ratings** 

## **2 Maximum ratings** 

at _T_ j = 25 °C, unless otherwise specified. 

## **Table 2 Maximum ratings** 

|**Table 2**<br>**Maximum ratingsgss**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**<br>~~=—-—-~~|**Values**<br>~~=—-—-~~|||**Unit**<br>~~=—-—-~~|**Note / Test Condition**|
|||**Min.**<br>~~=—-—-~~|**Typ.**<br>~~=—-—-~~|**Max.**<br>~~=—-—-~~|||
|Continuous drain current1)|_I_D<br>~~=—-—-~~<br>~~ee~~|-<br>~~=—-—-~~<br>~~ee~~|-<br>~~=—-—-~~<br>~~ee~~|20.2<br>~~=—-—-~~<br>~~ee~~|A<br>~~=—-—-~~<br>~~ee~~|_T_C= 25 °C|
|||~~=—-—-~~<br>~~ee~~|~~=—-—-~~<br>~~ee~~|12.8<br>~~=—-—-~~<br>~~ee~~||_T_C=100°C|
|Pulsed drain current2)|_I_D,pulse<br>~~ee~~<br>~~ee~~<br>~~pt~~|-<br>~~ee~~<br>~~ee~~<br>~~pttty~~|-<br>~~ee~~<br>~~ee~~<br>~~tty~~|59<br>~~ee~~<br>~~ee~~<br>~~tty~~|A<br>~~ee~~<br>~~ee~~<br>~~tty~~|_T_C=25 °C|
|Avalanche energy, single pulse|_E_AS<br>~~ee~~<br>~~pt~~|-<br>~~ee~~<br>~~pttty~~|-<br>~~ee~~<br>~~tty~~|418<br>~~ee~~<br>~~tty~~|mJ<br>~~ee~~<br>~~tty~~<br>|_I_D=3.4 A,_V_DD=50 V<br>(see table 21)|
|Avalanche energy, repetitive<br>~~Se~~|_E_AR<br>~~pt~~<br>~~ee~~<br>~~Se~~|-<br>~~pttty~~<br>~~ee~~<br>|-<br>~~tty~~<br>~~ee~~<br>|0.63<br>~~tty~~<br>~~ee~~<br>||_I_D=3.4 A,_V_DD=50 V|
|Avalanche current, repetitive<br>~~Se~~|_I_AR<br>~~pt~~<br>~~Se~~|-<br>~~pt tty~~<br>|-<br>~~tty~~<br>|3.4<br>~~tty~~<br>|A<br>~~tty~~<br>||
|MOSFET dv/dt ruggedness<br>~~Se~~|dv/dt<br>~~SeSa~~|-<br>~~Sa~~|-<br>~~Sa~~|50<br>~~Sa~~|V/ns<br>~~Sa~~|_V_DS=0...480 V|
|Gate source voltage<br>|_V_GS<br>~~Sa~~<br>~~eee~~|- 20<br>~~Sa~~<br>~~eee~~|-<br>~~Sa~~<br>~~eee~~|20<br>~~Sa~~<br>~~eee~~|V<br>~~Sa~~<br>~~eee~~|static|
|||- 30<br>~~eee~~|~~eee~~|30<br>~~eee~~||AC(f>1 Hz)|
|Power dissipation for<br>TO-220, TO-247, TO-262, TO-263|_P_tot<br>~~pp~~<br>~~a~~|-<br>~~pp~~<br>~~|~~<br>|-<br>~~pp~~<br>~~|~~<br>|151<br>~~pp~~<br>|W<br>~~pp~~<br>|_T_C=25 °C|
|Power dissipation for<br>TO-220 FullPAK|_P_tot<br>~~pp~~<br>~~ft~~<br>~~a~~|-<br>~~pp~~<br>~~ft~~<br>~~|~~<br>|-<br>~~pp~~<br>~~ft~~<br>~~|~~<br>|34<br>~~pp~~<br>~~ft~~<br>|||
|Operatingand storage temperature|_T_j,_T_stg<br>~~a~~|- 55<br>~~|~~<br>|-<br>~~|~~<br>|150<br>|°C<br>||
|Mounting torque<br>TO-220, TO-247|~~ee~~|-<br>~~ee~~|-<br>~~ee~~|60<br>~~ee~~|Ncm<br>~~ee~~<br>|M3 and M3.5 screws|
|Mounting torque<br>TO-220 FullPAK<br>~~Se~~|~~ee~~<br>~~ft]~~<br>~~Se~~|~~ee~~<br>~~ft]~~<br>|~~ee~~<br>~~ft]~~<br>|50<br>~~ee~~<br>~~ft]~~<br>||M2.5 screws|
|Continuous diode forward current<br>~~Se~~<br>~~Se~~|_I_S<br>~~Se~~<br>~~Se~~|-<br><br>~~|~~<br>|-<br><br>~~| rt~~<br>|17.5<br><br>~~rt~~<br>|A<br><br>~~rt~~<br>|_T_C=25 °C|
|Diode pulse current2)<br>~~Se~~<br>~~Se~~|_I_S,pulse<br>~~Setf~~<br>~~Se~~|-<br>~~tf~~<br>~~|~~<br>|-<br>~~tf~~<br>~~| rt~~<br>|59<br>~~tf~~<br>~~rt~~<br>|A<br>~~tf~~<br>~~rt~~<br>|_T_C=25 °C|
|Reverse diode dv/dt3)<br>~~Se~~|dv/dt<br>~~Se~~|-<br>~~|~~<br><br>~~ft~~|-<br>~~| rt~~<br><br>~~ft tf~~|15<br>~~rt~~<br><br>~~tf~~|V/ns<br>~~rt~~<br><br>~~tf~~|_V_DS=0...400 V,_I_SD& _I_D,<br>_T_j=25 °C<br>(see table 22)|
|Maximum diode<br>commutation speed3)<br>~~Se~~|dif/dt<br>~~Setf~~|-<br>~~|~~<br>~~tf~~<br>~~ft~~<br>~~ft~~|-<br>~~| rt~~<br>~~tf~~<br>~~ft tf~~<br>~~ftft~~|500<br>~~rt~~<br>~~tf~~<br>~~tf~~<br>~~ft~~|A/µs<br>~~rt~~<br>~~tf~~<br>~~tf~~||
|Insulation withstand voltage<br>TO-220 FullPAK|_V_ISO<br>~~ft~~|-<br>~~ft~~<br>~~ft~~<br>~~ft~~|-<br>~~ft tf~~<br>~~ft~~<br>~~ftft~~|2500<br>~~tf~~<br>~~ft~~<br>~~ft~~|V<br>~~tf~~<br>~~ft~~|_V_RMS_, T_C=25 °C_, t_= 1 min|



1) Limited by _T_ j,max. Maximum duty cycle D=0.75 

2) Pulse width _t_ p limited by _T_ j,max 

3) Identical low side and high side switch with identical _R_ G 

Final Data Sheet 

Rev. 2.2, 2014-12-02 

4 Page 4 

Rev. 2.3 

2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R190C6** 

**Thermal characteristics** 

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## **3 Thermal characteristics** 

## **Table 3 Thermal characteristics TO-220 (IPP60R190C6),TO-247 (IPW60R190C6),TO-262 (IPI60R190C6)** 

||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Parameter**||**Symbol**||||**Values**||||**Unit**||**Note /**|
|||||**Min.**||**Typ.**||**Max.**||||**Test Condition**|
|Thermal resistance, junction - case||_R_thJC||-||-||0.83||°C/W|||
|Thermal resistance, junction -||_R_thJA||-||-||62||||leaded|
|ambient|||||||||||||
|Soldering temperature,||_T_sold||-||-||260||°C||1.6 mm (0.063 in.)|
|wavesoldering only allowed at||||||||||||from case for 10 s|
|leads|||||||||||||



## **Table 4 Thermal characteristics TO-220 FullPAK (IPA60R190C6)** 

||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Parameter**||**Symbol**||||**Values**||||**Unit**||**Note /**|
|||||**Min.**||**Typ.**||**Max.**||||**Test Condition**|
|Thermal resistance, junction - case||_R_thJC||-||-||3.7||°C/W|||
|Thermal resistance, junction -||_R_thJA||-||-||80||||leaded|
|ambient|||||||||||||
|Soldering temperature,||_T_sold||-||-||260||°C||1.6 mm (0.063 in.)|
|wavesoldering only allowed at||||||||||||from case for 10 s|
|leads|||||||||||||



## **Table 5 Thermal characteristics TO-263 (IPB60R190C6)** 

|**Parameter**||**Symbol**||||**Values**||||**Unit**||**Note /**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||**Min.**||**Typ.**||**Max.**||||**Test Condition**|
|Thermal resistance, junction - case||_R_thJC||-||-||0.83||°C/W|||
|Thermal resistance, junction -||_R_thJA||-||-||62||||SMD version, device|
|ambient||||||||||||on PCB, minimal|
|||||||||||||footprint|
|||||||35||||||SMD version, device|
|||||||||||||on PCB, 6cm2 cooling|
|||||||||||||area1)|
|Soldering temperature,||_T_sold||-||-||260||°C||reflow MSL1|
|wave- & reflow soldering allowed|||||||||||||



1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm[2] copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. 

Final Data Sheet 

5 

Rev. 2.2, 2014-12-02 

Rev. 2.3 

2018-02-26 

Page 5 

**600V CoolMOS** " **C6 Power Transistor IPx60R190C6** 

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## **Electrical characteristics** 

## **4 Electrical characteristics** 

Electrical characteristics, at _T_ j=25 °C, unless otherwise specified. 

|**Table 6**|**Static characteristics**|**Static characteristics**|**Static characteristics**|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Parameter**|||**Symbol**||||**Values**||||**Unit**||**Note / Test Condition**|
||||||**Min.**||**Typ.**||**Max.**|||||
|Drain-source breakdown voltage|||_V_(BR)DSS||600||-||-||V||_V_GS=0 V,_I_D=0.25 mA|
|Gate threshold voltage|||_V_GS(th)||2.5||3||3.5||||_V_DS=_V_GS,_I_D=0.63mA|
|Zero gate voltage drain current|||_I_DSS||-||-||1||µA||_V_DS=600 V,_V_GS=0 V,|
||||||||||||||_T_j=25 °C|
||||||-||10||-||||_V_DS=600 V,_V_GS=0 V,|
||||||||||||||_T_j=150 °C|
|Gate-source|leakage current||_I_GSS||-||-||100||nA||_V_GS=20 V,_V_DS=0 V|
|Drain-source on-state resistance|||_R_DS(on)||-||0.17||0.19||!||_V_GS=10 V,_I_D=9.5 A,|
||||||||||||||_T_j=25 °C|
||||||-||0.44||-||||_V_GS=10 V,_I_D=9.5 A,|
||||||||||||||_T_j=150 °C|
|Gate resistance|||_R_G||-||8.5||-||!||_f_=1 MHz, open drain|



## **Table 7 Dynamic characteristics** 

||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Parameter**||**Symbol**||||**Values**||||**Unit**||**Note /**|
|||||**Min.**||**Typ.**||**Max.**||||**Test Condition**|
|Input capacitance||_C_iss||-||1400||-||pF||_V_GS=0 V,_V_DS=100 V,|
|Output capacitance||_C_oss||-||85||-||||_f_=1 MHz|
|Effective output capacitance,||_C_o(er)||-||56||-||||_V_GS=0 V,|
|energy related1)||||||||||||_V_DS=0...480 V|
|Effective output capacitance, time||_C_o(tr)||-||266||-||||_I_D=constant,_V_GS=0 V|
|related2)||||||||||||_V_DS=0...480V|
|Turn-on delay time||_t_d(on)||-||15||-||ns||_V_DD=400 V,|
|Rise time<br>Turn-off delay time||_t_r<br>_t_d(off)||-<br>-||11<br>110||-<br>-||||_V_GS=13 V,_I_D=9.5A,<br>_R_G= 3.4!<br>(see table 20)|
|Fall time||_t_f||-||9||-|||||
||||||||||||||



1) _C_ o(er) is a fixed capacitance that gives the same stored energy as _C_ oss while VDS is rising from 0 to 80% V(BR)DSS 

2) _C_ o(tr) is a fixed capacitance that gives the same charging time as _C_ oss while VDS is rising from 0 to 80% V(BR)DSS 

Final Data Sheet 

6 

Rev. 2.2, 2014-12-02 

Rev. 2.3 

Page 6 

2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R190C6** 

**==> picture [132 x 65] intentionally omitted <==**

## **Electrical characteristics** 

## **Table 8 Gate charge characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|7.6|-|nC|_V_DD=480 V,_I_D=9.5A,<br>_V_GS=0 to 10 V|
|Gate to drain charge|_Q_gd|-|32|-|||
|Gate charge total|_Q_g|-|63|-|||
|Gate plateau voltage|_V_plateau|-|5.4|-|V||



## **Table 9 Reverse diode characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0 V,_I_F=9.5A,<br>_T_j=25 °C|
|Reverse recovery time|_t_rr|-|430|-|ns|_V_R=400 V,_I_F=9.5A,<br>d_i_F/d_t_=100 A/µs<br>(see table 22)|
|Reverse recovery charge|_Q_rr|-|6.9|-|µC||
|Peak reverse recovery current|_I_rrm|-|30|-|A||



Final Data Sheet 

Rev. 2.2, 2014-12-02 

7 Page 7 

Rev. 2.3 

2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R190C6** 

**5 Electrical characteristics diagrams** 

## **Electrical characteristics diagrams** 

**Table 10** 

**Power dissipation TO-220, TO-247, TO-262, TO-263** 

**Power dissipation TO-220 FullPAK** 

Ge _P_ tot = f( _T_ C) _P_ tot = f( _T_ C) 

**Table 11** 

**Max. transient thermal impedance Max. transient thermal impedance** a **TO-220, TO-247, TO-262, TO-263 TO-220 FullPAK** 

eG _Z_ (thJC)=f(tp); parameter: D=tp/T _Z_ (thJC)=f(tp); parameter: D=tp/T 

8 

Final Data Sheet 

Rev. 2.2, 2014-12-02 

Rev. 2.3 

Page 8 

2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R190C6** 

## **Electrical characteristics diagrams** 

## **Table 12** 

**Safe operating area** _**T**_ **C=25 °C TO-220, TO-247, TO-262, TO-263** 

_I_ D=f(VDS); _T_ C=25 °C; D=0; parameter _t_ p 

**==> picture [139 x 21] intentionally omitted <==**

**----- Start of picture text -----**<br>
Safe operating area  T C=25 °C<br>TO-220 FullPAK<br>**----- End of picture text -----**<br>


_I_ D=f(VDS); _T_ C=25 °C; D=0; parameter _t_ p 

**Table 13** 

**Safe operating area** _**T**_ **C=80 °C TO-220, TO-247, TO-262, TO-263** 

_I_ D=f(VDS); _T_ C=80 °C; D=0; parameter _t_ p 

Final Data Sheet 

**Safe operating area** _**T**_ **C=80 °C TO-220 FullPAK** 

_I_ D=f(VDS); _T_ C=80 °C; D=0; parameter _t_ p 

9 

Rev. 2.2, 2014-12-02 

Rev. 2.3 

Page 9 

2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R190C6** 

**Electrical characteristics diagrams** 

**Table 14** 

~~a~~ **Typ. output characteristics** _**T**_ **C=25 °C Typ. output characteristics** _**T**_ **j=125 °C** 

a _I_ D=f( _V_ DS); _T_ j=25 °C; parameter: _V_ GS _I_ D=f( _V_ DS); _T_ j=125 °C; parameter: _V_ GS 

**Table 15** 

## a **Typ. drain-source on-state resistance Drain-source on-state resistance** 

a _R_ DS(on)=f( _I_ D); _T_ j=125 °C; parameter: _V_ GS _R_ **DS(on)** =f( _T_ **j** ); _I_ **D** =9.5 A; _V_ **GS** =10 V 

10 

Final Data Sheet 

Rev. 2.2, 2014-12-02 

Rev. 2.3 

Page 10 

2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R190C6** 

**Electrical characteristics diagrams** 

## **Table 16** 

**==> picture [494 x 17] intentionally omitted <==**

**----- Start of picture text -----**<br>
rs Typ. transfer characteristics Typ. gate charge<br>**----- End of picture text -----**<br>


**==> picture [113 x 38] intentionally omitted <==**

**----- Start of picture text -----**<br>
I D=f( V GS);  V DS=20V<br>ee<br>**----- End of picture text -----**<br>


_V_ GS=f( _Q_ gate), _I_ D=9.5A pulsed Q outs [NC] 

**Table 17** 

**==> picture [494 x 292] intentionally omitted <==**

**----- Start of picture text -----**<br>
Avalanche energy Drain-source breakdown voltage<br>rs(<br>500 660<br>- PUTA.<br>Uno 00<br>PEACE] | EET<br>100 q sco J\<br>re 60 100 440 160 Sen “20 20 60 700 140 160<br>Te) TCC]<br>es E AS =f( T j );  I D =3.4 A;  V DD =50 V V BR(DSS)=f( T j);  I D=0.25 mA<br>**----- End of picture text -----**<br>


Final Data Sheet 

Rev. 2.2, 2014-12-02 

11 Page 11 

Rev. 2.3 

2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R190C6** 

**Electrical characteristics diagrams** 

**Table 18** 

**==> picture [494 x 17] intentionally omitted <==**

**----- Start of picture text -----**<br>
rs Typ. capacitances Typ. C oss stored energy<br>**----- End of picture text -----**<br>


**==> picture [304 x 21] intentionally omitted <==**

**----- Start of picture text -----**<br>
C=f( V DS);  V GS=0 V;  f =1 MHz E OSS =f( V DS)<br>ee<br>**----- End of picture text -----**<br>


**Table 19** 

## **Forward characteristics of reverse diode** 

**==> picture [247 x 17] intentionally omitted <==**

**----- Start of picture text -----**<br>
ee I F=f( V SD); parameter: T j<br>**----- End of picture text -----**<br>


Final Data Sheet 

12 

Rev. 2.2, 2014-12-02 

Rev. 2.3 

Page 12 

2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R190C6** 

**Test circuits** 

**==> picture [132 x 65] intentionally omitted <==**

## **6 Test circuits** 

**Table 20 Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching time waveform** 

**==> picture [435 x 140] intentionally omitted <==**

**----- Start of picture text -----**<br>
V DS<br>90%<br>V DS<br>V GS<br>10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>**----- End of picture text -----**<br>


**Table 21 Unclamped inductive load test circuit and waveform** 

**Unclamped inductive load test circuit** 

**Unclamped inductive waveform** 

**==> picture [122 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
I D V DS<br>**----- End of picture text -----**<br>


**==> picture [233 x 118] intentionally omitted <==**

**----- Start of picture text -----**<br>
V (BR)DS<br>V D<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


**Table 22 Test circuit and waveform for diode characteristics** 

**Test circuit for diode characteristics Diode recovery waveform** 

**==> picture [455 x 145] intentionally omitted <==**

**----- Start of picture text -----**<br>
I D #<br>/#) #/$<br>R G1 [$] !0000(($ .!" .$")  ! )<br>$00<br>V DS ) $. $ )<br>R G2 !. !) %$! --, $<br>--, /#00 #/$ "--,<br>'$! --,<br>R G1 =  R G2<br>.*+$$$&&<br>**----- End of picture text -----**<br>


Final Data Sheet 

13 

Rev. 2.2, 2014-12-02 

Rev. 2.3 

Page 13 

2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R190C6** 

**Package outlines** 

**7 Package outlines** 

**Figure 1 Outlines TO-247, dimensions in mm/inches** 

Final Data Sheet 

14 

Rev. 2.2, 2014-12-02 

Rev. 2.3 

Page 14 

2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R190C6** 

## **Package outlines** 

**Figure 2 Outlines TO-220, dimensions in mm/inches** 

Final Data Sheet 

Rev. 2.2, 2014-12-02 

15 

Rev. 2.3 

Page 15 

2018-02-26 

6**M =^^[FGKm =6 H^fTa LaP]bXbc^a 

CHx6*J190=6 

**==> picture [147 x 65] intentionally omitted <==**

/45<487 @DC=;?7B 

**==> picture [417 x 605] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 2 3<br>MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>DOCUMENT NO.<br>A 4.50 4.90<br>Z8B00003319<br>A1 2.34 2.85<br>A2 2.42 2.86 REVISION<br>b 0.65 0.90 07<br>b1 0.95 1.38<br>b2 0.95 1.51 SCALE 5:1<br>b3 0.65 1.38 0 1 2 3 4 5mm<br>b4 0.65 1.51<br>c 0.40 0.63<br>D 15.67 16.15<br>D1 8.97 9.83 EUROPEAN PROJECTION<br>E 10.00 10.65<br>e 2.54<br>H 28.70 29.75<br>L 12.78 13.75<br>L1 2.83 3.45<br>øP 3.00 3.30 ISSUE DATE<br>Q 3.15 3.50 27.01.2017<br>**----- End of picture text -----**<br>


**Figure 3 Outline PG­TO­220 FullPAK dimensions in mm** 

>X]P[ <PcP KWTTc 

JTe( ,(,& ,*+.'12'02 2018-02-26 

+6 Page 16 

Rev. 2.3 

**600V CoolMOS** " **C6 Power Transistor IPx60R190C6** 

**Package outlines** 

**Figure 4 Outlines TO-262, dimensions in mm/inches** 

Final Data Sheet 

Rev. 2.2, 2014-12-02 

17 

Rev. 2.3 

Page 17 

2018-02-26 

)$$4 +AA>./2H +) 0AF8B 3B5@C<CDAB -0G)$1%*$+) 

056=598 AED><@8C 

,<9EB8 ( /ED><@8C 3/"&)'! 7<?8@C<A@C <@ ??#<@6;8C 

%' 

*02-1 )-3- ,/..3 

+.4# &#%! &$"$&"$(Rev. 2.2, 2014-12-02 

Rev. 2.3 

Page 18 

2018-02-26 

**IPx60R190C6** 

## IPx60R190C6 

## Previous Revision 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2011-06-08|Release of final data sheet|
|2.1|2011-09-14|-|
|2.2|2015-02-09|PG-TO220 FullPAK package outline update (creation:2014-12-02)|
|2.3|2018-03-04|Outline PG-TO220 FullPAK update|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

19 



## Links

- [View this product on Novapart](https://novapart.co/products/IPB60R190C6ATMA1/power-mosfet-n-channel-600-v-202-a-017-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipb60r190c6atma1/mosfet-n-ch-600v-20-2a-to263/dp/1860814)
---

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