# Power MOSFET, N Channel, 600 V, 18 A, 0.104 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3267779RL/)

**URL**: https://novapart.co/products/IPB60R125CFD7ATMA1/power-mosfet-n-channel-600-v-18-a-0104-ohm-to-263
**SKU**: IPB60R125CFD7ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.9400
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS CFD7 |
| Qualification | - |
| Power Dissipation | 92W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 92W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.104ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 18A |
| Drain Source On State Resistance | 0.104ohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3267779RL/)

**IPB60R125CFD7** 

## **MOSFET** 

(ZVS) and LLC. Resulting from reduced gate charge (Q g ), best-in-class reverse recovery charge (Q rr ) and improved turn off behavior CooIMOS™ 

## **Features** 

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**----- Start of picture text -----**<br>
D²PAK<br>tab<br>a<br>2 a<br>1 3 y<br>Drain<br>Pin 2, Tab -<br>van<br>Gate<br>Pin 1<br>Source<br>Pin 3<br>**----- End of picture text -----**<br>


* Best-in-class reverse recovery charge (Q rr) * Improved MOSFET reverse diode dv/dt and di F /dt ruggedness DS(on)*Qg DS(on)*Eoss ** Best-in-class Lowest FOM R R DS(on) in SMDand R and THD packages 

## **Benefits** 

|**Parameter**|**Value**|**Value**|**Unit**||||
|---|---|---|---|---|---|---|
|VDS @Tj,max|650||V||||
|RDS(on),max|125||mΩ||||
|Qg,typ|36||nC||||
|ID,pulse|66||A||||
|Eoss @400V|4.1||µJ||||
|Bodydiode diF/dt|1300||A/µs||||
||||||||
|||**Package**||**Marking**|||
|IPB60R125CFD7||PG-TO 263-3||60R125F7||see Appendix A|



Final Data Sheet 

1 

**600V�CoolMOSª�CFD7�Power�Transistor IPB60R125CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 

Final Data Sheet 

2 

Rev.�2.0,��2019-05-17 

**600V�CoolMOSª�CFD7�Power�Transistor IPB60R125CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|18<br>11|A|TC=25°C<br>TC=100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|66|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|78|mJ|ID=4.4A; VDD=50V; see table 10|
|Avalanche energy, repetitive|_E_AR|-|-|0.39|mJ|ID=4.4A; VDD=50V; see table 10|
|Avalanche current, single pulse|_I_AS|-|-|4.4|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|120|V/ns|_V_DS=0...400V|
|Gate source voltage(static)|_V_GS|-20|-|20|V|static;|
|Gate source voltage(dynamic)|_V_GS|-30|-|30|V|AC(f>1 Hz)|
|Power dissipation|_P_tot|-|-|92|W|_T_C=25°C|
|Storage temperature|_T_stg|-55|-|150|°C|-|
|Operating junction temperature|_T_j|-55|-|150|°C|-|
|Mountingtorque|-|-|-|-|Ncm|-|
|Continuous diode forward current|_I_S|-|-|18|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|66|A|_T_C=25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|70|V/ns|_V_DS=0...400V,_I_SD<=18A,_T_j=25°C<br>see table 8|
|Maximum diode commutation speed|diF/dt|-|-|1300|A/µs|_V_DS=0...400V,_I_SD<=18A,_T_j=25°C<br>see table 8|
|Insulation withstand voltage|_V_ISO|-|-|n.a.|V|_V_rms,_T_C=25°C,_t_=1min|



> 1) Limited by Tj,max. 

> 2) Pulse width tp limited by Tj,max 

3) Identical low side and high side switch with identical RG 

Final Data Sheet 

3 

Rev.�2.0,��2019-05-17 

**600V�CoolMOSª�CFD7�Power�Transistor IPB60R125CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction  - case|_R_thJC|-|-|1.36|°C/W|-|
|Thermal resistance,junction  - ambient|_R_thJA|-|-|62|°C/W|device on PCB, minimal footprint|
|Thermal resistance, junction  - ambient<br>for SMD version|_R_thJA|-|35|45|°C/W|Device on 40mm*40mm*1.5mm<br>epoxy PCB FR4 with 6cm² (one<br>layer, 70µm thickness) copper area<br>for drain connection and cooling.<br>PCB is vertical without air stream<br>cooling.|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|reflow MSL1|



Final Data Sheet 

Rev.�2.0,��2019-05-17 

4 

**600V�CoolMOSª�CFD7�Power�Transistor IPB60R125CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|600|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|3.5|4|4.5|V|_V_DS=_V_GS,_I_D=0.39mA|
|Zero gate voltage drain current1)|_I_DSS|-<br>-|-<br>8|1<br>37|µA|_V_DS=600V,_V_GS=0V,_T_j=25°C<br>_V_DS=600V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.104<br>0.237|0.125<br>-|Ω|_V_GS=10V,_I_D=7.8A,_T_j=25°C<br>_V_GS=10V,_I_D=7.8A,_T_j=150°C|
|Gate resistance|_R_G|-|8.8|-|Ω|_f_=1MHz,opendrain|
|**Table5Dynamiccharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|1503|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Output capacitance|_C_oss|-|28|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Effective output capacitance, energy<br>related2)|_C_o(er)|-|51|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance, time<br>related3)|_C_o(tr)|-|520|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|31|-|ns|_V_DD=400V,_V_GS=10V,_I_D=8.1A,<br>_R_G=5.3Ω;seetable9|
|Rise time|_t_r|-|14|-|ns|_V_DD=400V,_V_GS=10V,_I_D=8.1A,<br>_R_G=5.3Ω;seetable9|
|Turn-off delay time|_t_d(off)|-|66|-|ns|_V_DD=400V,_V_GS=10V,_I_D=8.1A,<br>_R_G=5.3Ω;seetable9|
|Fall time|_t_f|-|6|-|ns|_V_DD=400V,_V_GS=10V,_I_D=8.1A,<br>_R_G=5.3Ω;seetable9|



## **Table�6�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|8|-|nC|_V_DD=400V,_I_D=8.1A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|12|-|nC|_V_DD=400V,_I_D=8.1A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|36|-|nC|_V_DD=400V,_I_D=8.1A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.6|-|V|_V_DD=400V,_I_D=8.1A,_V_GS=0to10V|



> 1) Maximum specification is defined by calculated six sigma upper confidence bound 

> 2) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 3) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

Rev.�2.0,��2019-05-17 

5 

**600V�CoolMOSª�CFD7�Power�Transistor IPB60R125CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|1.0|-|V|_V_GS=0V,_I_F=7.8A,_T_j=25°C|
|Reverse recovery time|_t_rr|-|102|153|ns|_V_R=400V,_I_F=8.1A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Reverse recovery charge|_Q_rr|-|0.47|0.94|µC|_V_R=400V,_I_F=8.1A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Peak reverse recovery current|_I_rrm|-|7.9|-|A|_V_R=400V,_I_F=8.1A,d_i_F/d_t_=100A/µs;<br>see table 8|



Final Data Sheet 

6 

Rev.�2.0,��2019-05-17 

**IPB60R125CFD7** 

**==> picture [539 x 291] intentionally omitted <==**

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Final Data Sheet 

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**IPB60R125CFD7** 

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**IPB60R125CFD7** 

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Final Data Sheet 

9 

**IPB60R125CFD7** 

**==> picture [528 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
690 10 [5]<br>10 [4]<br>660 ee A<br>Ciss<br>10 [3]<br>630<br>10 [2]<br>- Fryer, |§ 2A<br>Coss<br>600<br>10 [1]<br>570 Crss<br>10 [0]<br>(7, | [| | [| | | | tf<br>71 TTT ===—<br>a FCEEELELELLELELEELLL<br>540 10 [-1]<br>-50 -25 0 25 50 75 100 125 150 0 100 200 300 400 500<br>T j [°C] V DS [V]<br>V BR(DSS)=f( T j I D C =f( V DS V GS f<br>C<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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Final Data Sheet 

10 

**IPB60R125CFD7** 

**==> picture [504 x 539] intentionally omitted <==**

**----- Start of picture text -----**<br>
Test circuit for diode characteristics Diode recovery waveform<br>V,1 y<br>R 1<br>g Vg feminineee So 7 7<br>$90 % Vps<br>r<br>@™ dv/dt<br>V DS aytt<br>t<br>R 2<br>g<br>dl, / dt } 10%Vie| 5<br>Qe 10% lm<br>I F<br>R 1 = R 2<br>g g<br>Table 9 Switching times<br>Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>V DS<br>V GS 10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>jb JRE<br>Table 10 Unclamped inductive load<br>Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPB60R125CFD7** 

Final Data Sheet 

12 

**IPB60R125CFD7** 

- 

- 

- 

- 

Final Data Sheet 

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**IPB60R125CFD7** 

## IPB60R125CFD7 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2019-05-17|Release of final version|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

14 



## Links

- [View this product on Novapart](https://novapart.co/products/IPB60R125CFD7ATMA1/power-mosfet-n-channel-600-v-18-a-0104-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipb60r125cfd7atma1/mosfet-n-ch-600v-18a-150deg-c/dp/3267779RL)
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