# Power MOSFET, N Channel, 650 V, 31 A, 0.099 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1664014/)

**URL**: https://novapart.co/products/IPB60R099CPATMA1/power-mosfet-n-channel-650-v-31-a-0099-ohm-to-263
**SKU**: IPB60R099CPATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.9100
**Stock**: 1000+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 255W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 31A |
| Drain Source On State Resistance | 0.099ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1664014/)

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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies O hereby disclaims 

For further information # on techn ~~o~~ logy, $' delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www. infineon.com). 

O 

cause the failure of that life-support, automotive, aviation and aerospace device B or system or to affect the safety or effectiveness of that ' device or system. Life support devices or systems are intended to be 



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- [Supplier page](https://es.farnell.com/infineon/ipb60r099cpatma1/mosfet-n-to-263/dp/1664014)
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