# Power MOSFET, N Channel, 60 V, 50 A, 9000 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1775550/)

**URL**: https://novapart.co/products/IPB090N06N3GATMA1/power-mosfet-n-channel-60-v-50-a-9000-ohm-to-263
**SKU**: IPB090N06N3GATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4400
**Stock**: 200+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 3 |
| Qualification | - |
| Power Dissipation | 71W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 50A |
| Drain Source On State Resistance | 9000µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1775550/)

**IPB090N06N3 G IPP093N06N3 G** 

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## "%&$!"# **[™] 3 Power-Transistor** 

## **Features** 

sync. rectification, drives and dc/dc S ), _R_ 9H"[Z# Very low on-resistance _R_ 9H"[Z# 

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|---|---|---|---|---|---|---|---|---|---|---|
|**Parameter**|||**Symbol **|||**Conditions**|||**Value**|**Unit**|
||||_I_9|||_T_8|*#||-(|6|
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+# 

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## **IPB090N06N3 G IPP093N06N3 G** 

|**IPB090N06N3 G IPP093N06N3 G**<br><n<br>Cinfineon|**IPB090N06N3 G IPP093N06N3 G**<br><n<br>Cinfineon|**IPB090N06N3 G IPP093N06N3 G**<br><n<br>Cinfineon|**IPB090N06N3 G IPP093N06N3 G**<br><n<br>Cinfineon|**IPB090N06N3 G IPP093N06N3 G**<br><n<br>Cinfineon|**IPB090N06N3 G IPP093N06N3 G**<br><n<br>Cinfineon|**IPB090N06N3 G IPP093N06N3 G**<br><n<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Thermal characteristics**|||||||
|Thermalresistance,|_R__T@8|~~minimalfootprint~~|%<br>~~ff]~~|%<br>~~ff]~~|)&.<br>~~ff]2|~~|A'K|
|Thermal resistance,|_R__T@6|~~minimalfootprint~~|<br>~~ff]~~|<br>~~ff]~~|~~ff]2|~~||
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|**Electrical characteristics,**<br>V<br>at<br>=25 °C, unless otherwise specified|||||||
|**Static characteristics**<br>~~Drain-sourcebreakdownvoltage~~<br>~~P|~~<br>~~=0V,=1mAPf~~|||||||
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||||||||



## **IPB090N06N3 G IPP093N06N3 G** 

|**IPB090N06N3 G IPP093N06N3 G**<br>om re<br>Cinfineon|**IPB090N06N3 G IPP093N06N3 G**<br>om re<br>Cinfineon|**IPB090N06N3 G IPP093N06N3 G**<br>om re<br>Cinfineon|**IPB090N06N3 G IPP093N06N3 G**<br>om re<br>Cinfineon|**IPB090N06N3 G IPP093N06N3 G**<br>om re<br>Cinfineon|**IPB090N06N3 G IPP093N06N3 G**<br>om re<br>Cinfineon|**IPB090N06N3 G IPP093N06N3 G**<br>om re<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics**|||||||
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|~~Reversetransfercapacitance~~|_C_]^^<br>~~P|~~||%<br>~~Pf]~~|*+<br>~~Pf]~~|%<br>~~Pf]~~||
|~~Reverse transfer capacitance~~|_t_P"[Z#<br>~~P|~~|_V_99<br>_V_=H<br>_I_9<br>_R_=<br>"<br>~~P|~~|%<br>~~Pf]~~|)-<br>~~Pf]~~|%<br>~~Pf]~~|Z^|
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|-#<br>See figure 16 for gate charge parameter definition|||||||



-# 

**IPB090N06N3 G IPP093N06N3 G** 

## **1 Power dissipation** 

_P_ _[_4R" _T_ 8# 

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**----- Start of picture text -----**<br>
100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 50 100 150 200<br>T  C [°C]<br>3 Safe operating area<br>4R" V  9H yy T  8 -=25 °C; D  4(<br>parameter: t  \<br>10 [3]<br>limited by on-state<br>]Q^U^_MZOQ 1 B<br>10 [2] 10 B<br>100 B<br>10 ms<br>10 [1]<br>98 1ms<br>10 [0]<br>10 [-1]<br>10 [-1] 10 [0] 10 [1] 10 [2]<br>V  DS [V]<br> [W]<br> tot<br>P<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

_I_ 94R" _V_ 9H yy _T_ 8 -=25 °C; _D_ 4( 

## **2 Drain current** 

_I_ 94R" _T_ 8 ); _V_ =H" 

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**----- Start of picture text -----**<br>
60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 50 100 150 200<br>T  C [°C]<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


**4 Max. transient thermal impedance** 

_Z_ _T@84R" _t_ \# 

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**----- Start of picture text -----**<br>
D  4 t  \' T<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [1]<br>10 [0] (&-<br>(&*<br>(&)<br>(&(-<br>(&(*<br>10 [-1] (&()<br>VA<br>single pulse<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t  p [s]<br> [K/W]<br> thJC<br>Z<br>**----- End of picture text -----**<br>


**IPB090N06N3 G IPP093N06N3 G** 

## **5 Typ. output characteristics** 

## **6 Typ. drain-source on resistance** 

_I_ 94R" _V_ 9H ); _T_ V 

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**----- Start of picture text -----**<br>
R  9H"[Z#4R" I  9 ); T  V<br>parameter: V  =H<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V  =H<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
200 20<br>19 ad 55V 6V<br>180 18<br>10V 8V<br>17<br>160 16<br>Tv 15 6.5V<br>140 14<br>13<br>120 G 12 7V<br>11<br>6.5V<br>100 10<br>8V<br>9<br>80 8 10V<br>6V 7<br>60 6<br>! 5<br>40 5.5 V 4<br>3<br>20 5V 2<br>45V 1<br>0 0<br>0 1 2 3 4 5 0 20 40 60 80 100<br>V  DS [V] I  D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>4R" V  =H ys | 9H [[f5*f]] [[I]] 9 [[f]] [[R]] 9H"[Z#YMc g  R^4R" I  9 yy T  V =25°C<br>parameter: T  V<br>100 100<br>80 80<br>60 60<br>40 40<br>20 20<br>0 0<br>0 2 4 6 8 0 50 100 150<br>V  GS [V] I  D [A] [A]<br>]<br>[m<br> [A]<br>I  D<br> DS(on)<br>R<br> [A]  [S]<br>I  D g  fs<br>**----- End of picture text -----**<br>


**7 Typ. transfer characteristics** 

_I_ 94R" _V_ =H ys | 9H[[f5*f]] _[[I]]_ 9[[f]] _[[R]]_ 9H"[Z#YMc 

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**----- Start of picture text -----**<br>
100<br>80<br>60<br>40<br>20<br>0<br>0 50 100 150<br>I  D [A] [A]<br> [S]<br> fs<br>g<br>**----- End of picture text -----**<br>


**IPB090N06N3 G IPP093N06N3 G** 

## **9 Drain-source on-state resistance** 

_R_ 9H"[Z#4R" _T_ V ); _I_ 9 =50A; _V_ =H 

## **10 Typ. gate threshold voltage** 

_V_ =H"_T#4R" _T_ V ); _V_ =H4 _V_ 9H 

_I_ 9 

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**----- Start of picture text -----**<br>
20 5<br>18<br>16 4<br>14<br>600 A<br>Gq 12 3<br>10!<br>10 60 A<br>)(J<br>8 2<br>6<br>4 1<br>2<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T  j [°C] T  j [°C]<br>]<br>[m  [V]<br> DS(on) V  GS(th)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

_C_ 4R" _V_ 9H ): _V_ =H =0V; _f_ =1 " I 

## **12 Forward characteristics of reverse diode** 

_I_ <4R" _V_ H9# 

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**----- Start of picture text -----**<br>
T<br> V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [4]<br>8U^^<br>10 [3] 8[^^<br>10 [2]<br>8]^^<br>10 [1]<br>0 20 40 60<br>V  DS [V]<br>[pF]<br>C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [3]<br>10 [2]<br>25 °C, 98%<br>10 [1]<br>10 [0]<br>0 0.5 1 1.5 2<br>V  SD [V]<br> [A]<br>I  F<br>**----- End of picture text -----**<br>


**IPB090N06N3 G IPP093N06N3 G** 

## **13 Avalanche characteristics** 

## **14 Typ. gate charge** 

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**----- Start of picture text -----**<br>
V  =H4R"4R" Q  SM_Q ); I  9<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I  6H4R" t  6J ); R  =H =25 " V  =H4R"4R" Q  SM_Q ); I<br>parameter: T  V"^_M]_# parameter: V  99<br>100 10<br>8<br>6<br>10<br>4<br>2<br>1 0<br>0.1 1 10 100 1000 0<br>t  AV [µs]<br>15 Drain-source breakdown voltage<br>V  7G"9HH#4R" T  V ); I  9 =1mA<br>70<br>V =H<br>65<br>60<br>V S ^"_T#<br>55<br>Q S"_T#<br>Q<br>50<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [A]  [V]<br>I  AS V  GS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10<br>8<br>6<br>4<br>2<br>0 fo<br>0 10 20 30 40<br>Q  gate [nC]<br>16 Gate charge waveforms<br>V =H<br>Q g<br>V S ^"_T#<br>Q S"_T# Q  ^b Q gate<br>Q  S^ Q  SP<br> [V]<br> GS<br>V<br>**----- End of picture text -----**<br>


**16 Gate charge waveforms** 

**IPB090N06N3 G IPP093N06N3 G** 

**PG-TO220-3** 

**IPB090N06N3 G IPP093N06N3 G** 

**PG-TO263 (D²-Pak)** 

**IPB090N06N3 G IPP093N06N3 G** 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## Legal **Legal Disclaimer** Disclaimer 

The The information information given given in this in document this document shall in shall no event in no be regarded event be as regarded a guarantee as of a guarantee of conditions or characteristics. conditions or characteristics. With respect With respect to any to examples any examples or hints or hints given given herein, herein, any any typical typical values stated herein and/or values stated any information herein and/or regarding any information the application regarding the of application the device, of the Infineon device, Technologies hereby disclaims any Infineon and Technologies all warranties hereby and disclaims liabilities any and of all any warranties kind, and including liabilities without of any kind, limitation, warranties of noninfringement including without of limitation, intellectual warranties property of rights non-infringement of any third of intellectual party. property rights 

of any third party. 

For **Information** further information on technology, delivery terms and conditions and prices, please contact the nearest For further Infineon information Technologies on technology, Office delivery (www.infineon.com). terms and conditions and prices, please 

contact the nearest Infineon Technologies Office (www.infineon.com). 

Due **Warnings** to technical requirements, components may contain dangerous substances. For information on the Due to types technical in requirements, question, please components contact may contain the nearest dangerous Infineon substances. Technologies For information Office. The Infineon Technologies on the types in question, component please described contact the in nearest this Data Infineon Sheet Technologies may be used Office. in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written Infineon Technologies components may be used in life-support devices or systems only with approval of Infineon Technologies, if a failure of such components can reasonably be expected to the express written approval of Infineon Technologies, if a failure of such components can cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the reasonably safety be or expected effectiveness to cause of the that failure device of that or system. life-support Life device support or system devices or to or affect systems are intended to be implanted the safety or in effectiveness the human of body that device or to or support system. Life and/or support maintain devices and or systems sustain are and/or protect human life. If they intended fail, to it be is implanted reasonable in the to assume human body that or the to support health and/or of the maintain user or and other sustain persons may be endangered. and/or protect human life. If they fail, it is reasonable to assume that the health of the user 

or other persons may be endangered. 



## Links

- [View this product on Novapart](https://novapart.co/products/IPB090N06N3GATMA1/power-mosfet-n-channel-60-v-50-a-9000-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipb090n06n3gatma1/mosfet-n-ch-50a-60v-pg-to263-3/dp/1775550)
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