# Power MOSFET, N Channel, 120 V, 180 A, 3600 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2212819/)

**URL**: https://novapart.co/products/IPB036N12N3GATMA1/power-mosfet-n-channel-120-v-180-a-3600-ohm-to-263
**SKU**: IPB036N12N3GATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.1200
**Stock**: 1000+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 120V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 180A |
| Drain Source On State Resistance | 3600µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2212819/)

**IPB036N12N3 G** 

## "%&$!"# **[™] 3 Power-Transistor** 

## **Features** 

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|Parameter|Symbol|Conditions|Value|Unit|
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## **IPB036N12N3 G** 

|**IPB036N12N3 G**<br>a,<br>Cinfineon|**IPB036N12N3 G**<br>a,<br>Cinfineon|**IPB036N12N3 G**<br>a,<br>Cinfineon|**IPB036N12N3 G**<br>a,<br>Cinfineon|**IPB036N12N3 G**<br>a,<br>Cinfineon|**IPB036N12N3 G**<br>a,<br>Cinfineon|**IPB036N12N3 G**<br>a,<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Thermal characteristics**|||||||
|Thermalresistance,|_R_T@8|~~minimalfootprint~~|%<br>~~ff]~~|%<br>~~ff]~~|(&-<br>~~ff]2|~~|A'K|
|Thermal resistance,|_R_T@6|~~minimalfootprint~~|<br>~~ff]~~|<br>~~ff]~~|~~ff]2|~~||
|||*<br>,#<br>~~minimal footprint~~|%<br>~~ff]~~|%<br>~~ff]~~|,(<br>~~ff] 2 |~~||
|**Electrical characteristics,**<br>V<br>at<br>=25 °C, unless otherwise specified|||||||
|**Static characteristics**<br>~~Drain-sourcebreakdownvoltage~~<br>~~P|~~<br>~~=0V,=1mAPf~~|||||||
|~~Drain-sourcebreakdownvoltage~~|_V_"7G#9HH <br>~~P|~~|_V_=H<br>_I_9<br>~~P|~~<br>~~=0V,=1mA~~|)*(<br>~~Pf~~|%<br>~~Pf~~|%|J|
|~~Drain-source breakdown voltage~~|_V_=H"T#<br>~~P|~~|_V_9H4_V_=H _I_9<br>~~P|~~<br>~~=0V, =1mA ~~|*<br> ~~Pf~~|+<br>~~Pf~~|,||
|Z<br>t<br>it<br>drai<br>t<br>ero gate voltage<br>drain curren<br>~~Gate-sourceleakagecurrent~~<br>~~po~~|_I_9HH<br>~~po~~|_V_9H<br>_V_=H<br>_T_V<br>=100 V,<br>=0V,<br>=25 °C|%|(&)|)|r6|
|||_V_9H<br>_V_=H<br>_T_V<br>=100 V,<br>=0V,<br>=125 °C<br>~~=20V,~~<br>~~=0V Pf~~|%<br>~~Pf~~|)(<br>~~Pf~~|)((<br>~~Pf~~||
|~~Gate-sourceleakagecurrent~~<br>~~po~~<br>~~Drain-sourceon-stateresistance~~|_I_=HH<br>~~po~~<br>~~P|~~|_V_=H<br>_V_9H<br>~~=20V,~~<br>~~=0V Pf~~<br>~~P|~~<br>~~=10V,~~<br>~~=100A Pf]~~|%<br>~~Pf~~<br>~~Pf]~~|)<br>~~Pf~~<br>~~Pf]~~|)((<br>~~Pf~~<br>~~Pf]~~|Z6|
|~~Gate-source leakage current~~<br>~~po~~<br>~~Drain-sourceon-stateresistance~~|_R_9H"[Z#<br>~~po~~<br>~~P|~~|_V_=H<br>_I_9<br>~~=20 V,~~<br>~~=0V Pf~~<br>~~P|~~<br>~~=10V,~~<br>~~=100A Pf]~~|%<br>~~Pf~~<br>~~Pf]~~|*&1<br>~~Pf~~<br>~~Pf]~~|+&.<br>~~Pf~~<br>~~Pf]~~|Y"|
|~~Drain-source on-state resistance~~|_R_=<br>~~P|~~|~~P|~~<br>~~=10V,~~<br>~~=100A Pf]~~|%<br>~~Pf]~~|)&,<br>~~Pf]~~|%<br>~~Pf]~~|"|
|I^MZ_O[ZPaOMZOQ|_g_R_<br>~~|~~|g_V_9Hg5*g_I_9g_R_9H"[Z#YMd<br>_I_9<br> =100A|10<br>~~| ~~|)1-<br> ~~i~~|%<br>~~i~~|H|
|,#<br>Device on 40 mm x40 mm x 1.5 mm epoxy PCB FR4 with6c_<br>(one layer, 70<br>m thick) copper area for drain<br>connection. PCB is vertical in still air.|||||||



,# 

## **IPB036N12N3 G** 

|**IPB036N12N3 G**<br>om re<br>Cinfineon|**IPB036N12N3 G**<br>om re<br>Cinfineon|**IPB036N12N3 G**<br>om re<br>Cinfineon|**IPB036N12N3 G**<br>om re<br>Cinfineon|**IPB036N12N3 G**<br>om re<br>Cinfineon|**IPB036N12N3 G**<br>om re<br>Cinfineon|**IPB036N12N3 G**<br>om re<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics**|||||||
||_C_U__|_V_=H<br>_V_9H<br>_f_<br>" J<br>=0V,<br>=60V,<br>=1<br>~~P|~~|%|)(,((|)+0((|\<|
|j<br>Output capacitance<br>~~Reversetransfercapacitance~~|_C_[__<br>~~P|~~||%<br>~~Pf]~~|)+*(<br>~~Pf]~~|)/.(<br>~~Pf]~~||
|~~Reversetransfercapacitance~~|_C_^__<br>~~P|~~||%<br>~~Pf]~~|.)<br>~~Pf]~~|%<br>~~Pf]~~||
|~~Reverse transfer capacitance~~|_t_P"[Z#<br>~~P|~~|_V_99<br>_V_=H<br>_I_9<br>_R_=<br>"<br>~~P|~~|%<br>~~Pf]~~|+-<br>~~Pf]~~|%<br>~~Pf]~~|Z_|
||_t_^||%|-*|%||
||_t_P"[RR#||%|/.|%||
||_t_R||%|*)|%||
|#<br>Gate Char e Characteristics|||||||
||_Q_S_|_V_99<br>_I_9<br>_V_=H<br>=0 to 10V|%|-*|%|Z8|
||_Q_SP||%|+/|%||
|witching charge|_Q__c||%|-/|%||
||_Q_S||%|)-0|*))||
||_V_\XMQMa||%|-&(|%|J|
||_Q_[__|_V_99<br>_V_=H|%|)0*|*,*|Z8|
|**Reverse Diode**<br>~~Diodecontinousforwardcurrent~~<br>~~P|~~<br>~~Pf]~~|||||||
|~~Diodecontinousforwardcurrent~~|_I_H<br>~~P|~~|_T_8<br>~~P|~~<br>=25 °C|%<br>~~Pf]~~|%<br>~~Pf]~~|)0(<br>~~Pf]~~|6|
|~~Diode continous forward current~~|_I_H$\aX_Q<br>~~P|~~||%<br>~~Pf]~~|%<br>~~Pf]~~|/*(<br>~~Pf]~~||
|Diode forward<br>volt<br>iode forward<br>voltage|_V_H9|_V_=H<br>_I_<<br>_T_V<br>“OM<br>=T00A,<br>=25 °C|%|(&1|)&*|J|
||_t_^^|_V_G<br>_I_<4_I_H<br>P_i_<'P_t_<br>C|%|)*+|%|Z_|
||_Q_^^||%|+-.|%|Z8|
|-#<br>See figure 16 for gate charge parameter definition|||||||



-# 

**IPB036N12N3 G** 

## **1 Power dissipation** 

_P_ `[`4R" _T_ 8# 

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**----- Start of picture text -----**<br>
350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 50 100 150 200<br>T  C [°C]<br>3 Safe operating area<br>4R" V  9H ); T  8 25 °C; D  4(<br>parameter: t  \<br>10 [3]<br>limited by on-state 4 C<br>^Q_U_`MZOQ<br>C<br>\ 10010 C<br>10 [2]<br>1ms<br>98<br>10 ms<br>10 [1]<br>10 [0]<br>10 [-1] 10 [0] 10 [1] 10 [2]<br>V  DS [V]<br> [W]<br> tot<br>P<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

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**----- Start of picture text -----**<br>
I  94R" V  9H ); T  8 25 °C; D  4(<br>**----- End of picture text -----**<br>


## **2 Drain current** 

_I_ 94R" _T_ 8 ); _V_ =H" 

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**----- Start of picture text -----**<br>
200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 50 100 150 200<br>T  C [°C]<br>4 Max. transient thermal impedance<br> `T@84R"4R" t  \##<br>parameter: D  4 t  \' T<br>10 [0]<br>p<br>(&-<br>(&*<br>10 [-1]<br>(&)<br>(&(-<br>(&(*<br>(&()<br>single pulse<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t  p [s]<br> [A]<br>I  D<br> [K/W]<br> thJC<br>Z<br>**----- End of picture text -----**<br>


**4 Max. transient thermal impedance** _Z_ `T@84R"4R" _t_ \## 

**IPB036N12N3 G** 

## **5 Typ. output characteristics** 

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**----- Start of picture text -----**<br>
I  94R" V  9H ); T  V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
parameter: V  =H<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 1 2 3 4 5<br>V  DS [V]<br>7 Typ. transfer characteristics<br>4R" V  =H ys | 9H [[g5*g]] [[I]] 9 [[g]] [[R]] 9H"[Z#YMd<br>parameter: T  V<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 2 4 6 8<br>V  GS [V]<br> [A]<br>I  D<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


**7 Typ. transfer characteristics** 

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**----- Start of picture text -----**<br>
I  94R" V  =H ys | 9H [[g5*g]] [[I]] 9 [[g]] [[R]] 9H"[Z#YMd<br>**----- End of picture text -----**<br>


## **6 Typ. drain-source on resistance** 

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**----- Start of picture text -----**<br>
R  9H"[Z#4R" I  9 ); T  V<br>parameter: V  =H<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
6<br>5V<br>5<br>5.5V<br>6V<br>4<br>Gq 7V<br>3 10V<br>2<br>1<br>0<br>0 100 200 300 400<br>I  D [A]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


**==> picture [143 x 28] intentionally omitted <==**

**----- Start of picture text -----**<br>
8 Typ. forward transconductance<br>g  R_4R" I  9 yy T  V =25°C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
250<br>200<br>150<br>100<br>50<br>0<br>0 40 80 120 160 200<br>I  D [A]<br> [S]<br> fs<br>g<br>**----- End of picture text -----**<br>


**IPB036N12N3 G** 

## **9 Drain-source on-state resistance** 

_R_ 9H"[Z#4R" _T_ V ); _I_ 9 =100A; _V_ =H 

## **10 Typ. gate threshold voltage** 

_V_ =H"`T#4R" _T_ V ); _V_ =H4 _V_ 9H 

_I_ 9 

**==> picture [204 x 245] intentionally omitted <==**

**----- Start of picture text -----**<br>
8<br>7<br>6<br>5<br>Gq<br>YMd<br>4<br>`e\<br>3<br>2<br>1<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

_C_ 4R" _V_ 9H ): _V_ =H =0V; _f_ =1 " J 

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**----- Start of picture text -----**<br>
4<br>3.5<br>2700 A<br>3<br>270 A<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [V]<br> GS(th)<br>V<br>**----- End of picture text -----**<br>


**12 Forward characteristics of reverse diode** 

_I_ <4R" _V_ H9# 

_T_ V 

**==> picture [203 x 244] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [5]<br>8U__<br>10 [4]<br>8[__<br>10 [3]<br>8^__<br>10 [2]<br>10 [1]<br>0 20 40 60 80<br>V  DS [V]<br>[pF]<br>C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [3]<br>25 °C<br>10 [2]<br>175°C<br>25 °C, max<br>10 [1]<br>10 [0]<br>0 0.5 1 1.5 2<br>V  SD [V]<br> [A]<br>I  F<br>**----- End of picture text -----**<br>


**IPB036N12N3 G** 

## **13 Avalanche characteristics** 

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**----- Start of picture text -----**<br>
I  6H4R" t  6J ); R  =H =25 "<br>parameter: T  V"_`M^`#<br>10 [3]<br>10 [2]<br>25 °C<br>100 °C<br>150 °C<br>10 [1]<br>10 [0]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [4]<br>t  AV [µs]<br>15 Drain-source breakdown voltage<br>V  7G"9HH#4R" T  V ); I  9 =1mA<br>135<br>130<br>125<br>120<br>115<br>110<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [A]<br>I  AV<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


## **14 Typ. gate charge** 

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**----- Start of picture text -----**<br>
V  =H4R" Q  SM`Q ); I  9<br>parameter: V  99<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10<br>60V<br>8<br>20 y/ 40V<br>6<br>4<br>2<br>0<br>0 40 80 120 160<br>Q  gate [nC]<br> [V]<br> GS<br>V<br>**----- End of picture text -----**<br>


**16 Gate charge waveforms** 

**==> picture [187 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
V =H<br>Q g<br>V S _"`T#<br>Q S"`T# Q  _c Q gate<br>Q  S_ Q  SP<br>**----- End of picture text -----**<br>


**IPB036N12N3 G** 

**PG-TO263-7** 

**IPB036N12N3 G** 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved.** 

## Legal **Legal Disclaimer** Disclaimer 

The The information information given given in this in this document document shall in shall no event in no be event regarded be as regarded a guarantee as a of guarantee of conditions or characteristics. conditions or characteristics. With respect With to respect any examples to any examples or hints or hints given given herein, herein, any any typical typical values stated herein and/or values stated any information herein and/or regarding any information the application regarding the of the application device, of Infineon the device, Technologies hereby disclaims any Infineon and Technologies all warranties hereby and disclaims liabilities any and of all any warranties kind, including and liabilities without of any kind, limitation, warranties of noninfringement including without of intellectual limitation, warranties property of rights non-infringement of any third of party. intellectual property rights of any third party. 

For **Information** further information on technology, delivery terms and conditions and prices, please contact the nearest For further Infineon information Technologies on technology, Office delivery (www.infineon.com). terms and conditions and prices, please 

contact the nearest Infineon Technologies Office (www.infineon.com). 

Due **Warnings** to technical requirements, components may contain dangerous substances. For information on the Due to types technical in question, requirements, please components contact may the contain nearest dangerous Infineon substances. Technologies For information Office. The Infineon Technologies on the types in question, component please described contact the in nearest this Data Infineon Sheet Technologies may be used Office. in life-support devices or systems and/or Infineon automotive, Technologies components aviation and may aerospace be used in life-support applications devices or or systems systems only only with with the express written approval the express of written Infineon approval Technologies, of Infineon Technologies, if a failure if of a such failure components of such components can reasonably can be expected to cause reasonably the be failure expected of that to cause life-support, the failure automotive, of that life-support aviation device and or aerospace system or to device affect or system or to affect the the safety safety or or effectiveness effectiveness of that of that device device or system. or system. Life support Life support devices or devices systems or are systems are intended to be implanted intended to in be the implanted human in the body human or to body support or to support and/or and/or maintain maintain and and sustain sustain and/or protect human life. If they and/or fail, protect it is reasonable human life. If to they assume fail, it is that reasonable the health to assume of the that user the or health other of persons the user may be endangered. 

or other persons may be endangered. 



## Links

- [View this product on Novapart](https://novapart.co/products/IPB036N12N3GATMA1/power-mosfet-n-channel-120-v-180-a-3600-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipb036n12n3gatma1/mosfet-n-ch-120v-180a-to263-7/dp/2212819)
---

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