# Power MOSFET, N Channel, 80 V, 100 A, 3500 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2725839/)

**URL**: https://novapart.co/products/IPB035N08N3GATMA1/power-mosfet-n-channel-80-v-100-a-3500-ohm-to-263
**SKU**: IPB035N08N3GATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.8800
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 3 |
| Qualification | - |
| Power Dissipation | 214W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 3500µohm |
| Gate Source Threshold Voltage Max | 2.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725839/)

## **IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G** 

## "%&$!"# **[™] 3 Power-Transistor** 

## **Features** 

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 Qualified according to JEDEC )# for target applications<br>**----- End of picture text -----**<br>


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||||||||||
|---|---|---|---|---|---|---|---|---|
|Type|
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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Maximum ratings,|at|V|=25|°C,|unless|otherwise|specified|
|Parameter|Symbol|Conditions|Value|Unit|
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)# 

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> +# Z 

**IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G** 

|**IPP037N08N3 G**<br>**IPI037N08N3 G**<br>**IPB035N08N3 G**<br>om re<br>Cinfineon|**IPP037N08N3 G**<br>**IPI037N08N3 G**<br>**IPB035N08N3 G**<br>om re<br>Cinfineon|**IPP037N08N3 G**<br>**IPI037N08N3 G**<br>**IPB035N08N3 G**<br>om re<br>Cinfineon|**IPP037N08N3 G**<br>**IPI037N08N3 G**<br>**IPB035N08N3 G**<br>om re<br>Cinfineon|**IPP037N08N3 G**<br>**IPI037N08N3 G**<br>**IPB035N08N3 G**<br>om re<br>Cinfineon|**IPP037N08N3 G**<br>**IPI037N08N3 G**<br>**IPB035N08N3 G**<br>om re<br>Cinfineon|**IPP037N08N3 G**<br>**IPI037N08N3 G**<br>**IPB035N08N3 G**<br>om re<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Thermal characteristics**|||||||
|Thermalresistance,|_R_T@8|~~minimalfootprint~~|%<br>~~ff]~~|%<br>~~ff]~~|(&/<br>~~ff]2|~~|A'K|
|Thermal resistance,|_R_T@6|~~minimalfootprint~~|<br>~~ff]~~|<br>~~ff]~~|~~ff]2|~~||
|||*<br>,#<br>~~minimal footprint~~|%<br>~~ff]~~|%<br>~~ff]~~|,(<br>~~ff] 2 |~~||
|**Electrical characteristics,**<br>V<br>at<br>=25 °C, unless otherwise specified|||||||
|**Static characteristics**<br>~~Drain-sourcebreakdownvoltage~~<br>~~P|~~<br>~~=0V,=1mAPf~~|||||||
|~~Drain-sourcebreakdownvoltage~~|_V_"7G#9HH <br>~~P|~~|_V_=H<br>_I_9<br>~~P|~~<br>~~=0V,=1mA~~|0(<br>~~Pf~~|%<br>~~Pf~~|%|J|
|~~Drain-source breakdown voltage~~|_V_=H"T#<br>~~P|~~|_V_9H4_V_=H _I_9<br>~~P|~~<br>~~=0V, =1mA ~~|*<br> ~~Pf~~|*&0<br>~~Pf~~|+&-||
|Zero<br>gate<br>voltage<br>drai<br>t<br>ero gate voltage<br>drain curren<br>~~Gate-sourceleakagecurrent~~<br>~~po~~|_I_9HH<br>~~po~~|_V_9H<br>_V_=H<br>_T_V<br>UN,<br>=ON<br>=25 °C|%|(&)|)|r6|
|||_V_9H<br>_V_=H<br>_T_V<br>=80 V,<br>=0V,<br>=125 °C<br>~~=20V,~~<br>~~=0V Pf~~|%<br>~~Pf~~|)(<br>~~Pf~~|)((<br>~~Pf~~||
|~~Gate-sourceleakagecurrent~~<br>~~po~~|_I_=HH<br>~~po~~|_V_=H<br>_V_9H<br>~~=20V,~~<br>~~=0V Pf~~|%<br>~~Pf~~|)<br>~~Pf~~|)((<br>~~Pf~~|Z6|
|~~Gate-source leakage current~~<br>~~po~~<br>Drain-source on-state resistance|_R_9H"[Z#<br>~~po~~|_V_=H<br>_I_9<br>~~=20 V,~~<br>~~=0V Pf~~<br>=10V,<br>=100A~~Pf]~~|%<br>~~Pf~~<br>~~Pf]~~|+&)<br>~~Pf~~<br>~~Pf]~~|+&/-<br>~~Pf~~<br>~~Pf]~~|Y"|
|||_V_=H<br>_I_9|%|+&1|.&+||
|"HB9#<br>Drain-source on-state resistance|_R_9H"[Z#|_V_=H<br>_I_9<br>=10V,<br>=100A~~Pf]~~|%<br>~~Pf]~~|*&0<br>~~Pf]~~|+&-<br>~~Pf]~~||
|||_V_=H<br>_I_9|%|+&.|.&(||
||_R_=||%|)&1|%|"|
|I^MZ_O[ZPaOMZOQ|_g_R_<br>~~|~~|g_V_9Hg5*g_I_9g_R_9H"[Z#YMd<br>_I_9<br> =100A|/-<br>~~| ~~|),1<br> ~~i~~|%<br>~~i~~|H|
|,#<br>Device on 40 mm x40 mm x 1.5 mm epoxy PCB FR4 with6c_<br>(one layer, 70<br>m thick) copper area for drain<br>connection. PCB is vertical in still air.|||||||



,# 

## **IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G** 

|**IPP037N08N3 G**<br>**IPI037N08N3 G**<br>**IPB035N08N3 G**<br>om re<br>Cinfineon|**IPP037N08N3 G**<br>**IPI037N08N3 G**<br>**IPB035N08N3 G**<br>om re<br>Cinfineon|**IPP037N08N3 G**<br>**IPI037N08N3 G**<br>**IPB035N08N3 G**<br>om re<br>Cinfineon|**IPP037N08N3 G**<br>**IPI037N08N3 G**<br>**IPB035N08N3 G**<br>om re<br>Cinfineon|**IPP037N08N3 G**<br>**IPI037N08N3 G**<br>**IPB035N08N3 G**<br>om re<br>Cinfineon|**IPP037N08N3 G**<br>**IPI037N08N3 G**<br>**IPB035N08N3 G**<br>om re<br>Cinfineon|**IPP037N08N3 G**<br>**IPI037N08N3 G**<br>**IPB035N08N3 G**<br>om re<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics**|||||||
||_C_U__|_V_=H<br>_V_9H<br>_f_<br>" J<br>=0V,<br>=40V,<br>=1<br>~~P|~~|%|.)((|0))(|\<|
|;<br>Output capacitance<br>~~Reversetransfercapacitance~~|_C_[__<br>~~P|~~||%<br>~~Pf]~~|).,(<br>~~Pf]~~|*)0(<br>~~Pf]~~||
|~~Reversetransfercapacitance~~|_C_^__<br>~~P|~~||%<br>~~Pf]~~|-1<br>~~Pf]~~|%<br>~~Pf]~~||
|~~Reverse transfer capacitance~~|_t_P"[Z#<br>~~P|~~|_V_99<br>_V_=H<br>_I_9<br>_R_=<br>"<br>~~P|~~|%<br>~~Pf]~~|*+<br>~~Pf]~~|%<br>~~Pf]~~|Z_|
||_t_^||%|/1|%||
||_t_P"[RR#||%|,-|%||
||_t_R||%|),|%||
|#<br>Gate Char e Characteristics|||||||
||_Q_S_|_V_99<br>_I_9<br>_V_=H<br>=40V,<br>=100A,|%|+(|%|Z8|
|ao:|_Q_SP||%|)0|%||
|ao:|_Q__c||%|+)|%||
||_Q_S||%|00|))/||
||_V_\XMQMa||%|-&(|%|J|
||_Q_[__|_V_99<br>_V_=H|%|))1|)-0|Z8|
|**Reverse Diode**<br>~~Diodecontinousforwardcurrent~~<br>~~P|~~<br>~~Pf]~~|||||||
|~~Diodecontinousforwardcurrent~~|_I_H<br>~~P|~~|_T_8<br>~~P|~~<br>=25 °C|%<br>~~Pf]~~|%<br>~~Pf]~~|)((<br>~~Pf]~~|6|
|~~Diode continous forward current~~|_I_H$\aX_Q<br>~~P|~~||%<br>~~Pf]~~|%<br>~~Pf]~~|,((<br>~~Pf]~~||
|Diode forward<br>volt<br>iode forward<br>voltage|_V_H9|_V_=H<br>_I_<<br>_T_V<br>“OM<br>=T00A,<br>=25 °C|%|)&(|)&*|J|
||_t_^^|_V_G<br>_I_<4_I_H<br>P_i_<'P_t_<br>C|%|/+|%|Z_|
||_Q_^^||%|)+.|%|Z8|
|-#<br>See figure 16 for gate charge parameter definition|||||||



-# 

**IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G** 

## **1 Power dissipation** 

_P_ `[`4R" _T_ 8# 

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**----- Start of picture text -----**<br>
250<br>200<br>150<br>100<br>50<br>0<br>0 50 100 150 200<br>T  C [°C]<br>3 Safe operating area<br>4R" V  9H ); T  8 25 °C; D  4(<br>parameter: t  \<br>10 [3]<br>limited by on-state<br>^Q_U_`MZOQ , C<br>C<br>| 10<br>10 [2] 100 C<br>1ms<br>10 ms<br>10 [1] 98<br>10 [0]<br>10 [-1] 10 [0] 10 [1] 10 [2]<br>V  DS [V]<br> [W]<br> tot<br>P<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

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**----- Start of picture text -----**<br>
I  94R" V  9H ); T  8 25 °C; D  4(<br>parameter: t  \<br>**----- End of picture text -----**<br>


## **2 Drain current** 

_I_ 94R" _T_ 8 ); _V_ =H" 

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**----- Start of picture text -----**<br>
120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 50 100 150 200<br>T  C [°C]<br>4 Max. transient thermal impedance<br> `T@84R"4R" t  \##<br>parameter: D  4 t  \' T<br>10 [0]<br>(&-<br>J<br>(&*<br>10 [-1] (&)<br>/,<br>(&(-<br>(&(*<br>(&()<br>single pulse<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t  p [s]<br> [A]<br>I  D<br> [K/W]<br> thJC<br>Z<br>**----- End of picture text -----**<br>


**4 Max. transient thermal impedance** _Z_ `T@84R"4R" _t_ \## 

**IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G** 

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**----- Start of picture text -----**<br>
5 Typ. output characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I  94R" V  9H ); T  V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
parameter: V  =H<br>400<br>10V<br>350<br>7V<br>300<br>6V<br>250<br>200<br>5.5V<br>150<br>I<br>100 / 5V<br>50<br>45V<br>0<br>0 1 2 3 4 5<br>V  DS [V]<br>7 Typ. transfer characteristics<br>4R" V  =H ys | 9H [[g5*g]] [[I]] 9 [[g]] [[R]] 9H"[Z#YMd<br>parameter: T  V<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 2 4 6 8<br>V  GS [V]<br> [A]<br>I  D<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


**7 Typ. transfer characteristics** 

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**----- Start of picture text -----**<br>
I  94R" V  =H ys | 9H [[g5*g]] [[I]] 9 [[g]] [[R]] 9H"[Z#YMd<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
6 Typ. drain-source on resistance<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
R  9H"[Z#4R" I  9 ); T  V =25 °C<br>parameter: V  =H<br>10<br>45V 5V 5.5V<br>8<br>G 6<br>6V<br>4<br>7V<br>10V<br>2<br>0<br>0 50 100 150 200<br>I  D [A]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


**8 Typ. forward transconductance** _g_ R_4R" _I_ 9 ); _T_ V =25°C 

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**----- Start of picture text -----**<br>
200<br>150<br>100<br>50<br>0<br>0 50 100 150<br>I  D [A]<br> [S]<br> fs<br>g<br>**----- End of picture text -----**<br>


**IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G** 

**9 Drain-source on-state resistance** 

_R_ 9H"[Z#4R" _T_ V ); _I_ 9 =100A; _V_ =H 

## **10 Typ. gate threshold voltage** 

_V_ =H"`T#4R" _T_ V ); _V_ =H4 _V_ 9H 

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**----- Start of picture text -----**<br>
I  9<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
8 4<br>3.5<br>6 3<br>1550 A<br>2.5<br>YMd<br>4 2<br>`e\<br>1.5<br>CG  ae mA<br>2 1<br>0.5<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T  j [°C] T  j [°C]<br>]<br>[m  [V]<br>R  DS(on) V  GS(th)<br>**----- End of picture text -----**<br>


**11 Typ. capacitances** 

_C_ 4R" _V_ 9H OV; _V_ =H _f_ =1 " J 

## **12 Forward characteristics of reverse diode** 

_I_ <4R" _V_ H9# 

_T_ V 

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**----- Start of picture text -----**<br>
10 [4]<br>8U__<br>8[__<br>10 [3]<br>8^__<br>10 [2]<br>, ar<br>10 [1]<br>0 20 40 60 80<br>V  DS [V]<br>[pF]<br>C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [3]<br>10 [2]<br>10 [1]<br>f 175 °C,max<br>10 [0]<br>0 0.5 1 1.5 2<br>V  SD [V]<br> [A]<br>I  F<br>**----- End of picture text -----**<br>


**IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G** 

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**----- Start of picture text -----**<br>
13 Avalanche characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
14 Typ. gate charge<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V  =H4R"4R" Q  SM`Q ); I  9<br>parameter: V  99<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I  6H4R" t  6J ); R  =H =25 " V  =H4R"4R" Q  SM`Q ); I  9 =100 A pulsed<br>parameter: T  V"_`M^`# parameter: V  99<br>1000 12<br>40V<br>10<br>20V 60V<br>100 8<br>25 °C<br>100 °C 6<br>150 °C<br>10 4<br>2<br>1 0<br>0.1 1 10 100 1000 0 20 40 60 80 100<br>t  AV [µs] Q  gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V  7G"9HH#4R" T  V ); I  9 =1mA<br>90<br>V =H<br>Q g<br>80<br>V S _"`T#<br>70<br>Q S"`T# Q  _c Q gate<br>60 Q  S_ Q  SP<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [A]  [V]<br>I  AV V  GS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


**IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G** 

**PG-TO263-3 (D²-Pak)** 

**IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G** 

**PG-TO262-3 (I²-Pak)** 

**IPP037N08N3 G IPI037N08N3 G** 

## **IPB035N08N3 G** 

**==> picture [53 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
PG-TO220-3<br>**----- End of picture text -----**<br>


**IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G** 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## Legal **Legal Disclaimer** Disclaimer 

The The information information given given in this in document this document shall in no shall event in be no regarded event be as a regarded guarantee as of a guarantee of conditions or characteristics. conditions or characteristics. With respect With respect to any to examples any examples or or hints hints given given herein, herein, any any typical typical values stated herein and/or values any stated information herein and/or regarding any information the application regarding the of application the device, of the Infineon device, Technologies hereby disclaims any Infineon and Technologies all warranties hereby and disclaims liabilities any and of all warranties any kind, and including liabilities of without any kind, limitation, warranties of noninfringement including without of limitation, intellectual warranties property of non-infringement rights of any third of intellectual party. property rights 

of any third party. 

For **Information** further information on technology, delivery terms and conditions and prices, please contact the nearest For further Infineon information Technologies on technology, Office delivery (www.infineon.com). terms and conditions and prices, please 

contact the nearest Infineon Technologies Office (www.infineon.com). 

Due to technical requirements, components may contain dangerous substances. For information on **Warnings** the Due to types technical in requirements, question, please components contact may contain the nearest dangerous Infineon substances. Technologies For information Office. The Infineon Technologies on the types in question, component please described contact the in nearest this Data Infineon Sheet Technologies may be Office. used in life-support devices or systems and/or Infineon automotive, Technologies components aviation and may be aerospace used in life-support applications devices or or systems systems only only with with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to the express written approval of Infineon Technologies, if a failure of such components can cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted the safety or in effectiveness the human of that body device or to or support system. Life and/or support maintain devices or and systems sustain are and/or protect human life. If they intended fail, to it be is implanted reasonable in the to human assume body that or to the support health and/or of the maintain user or and other sustain persons may be endangered. and/or protect human life. If they fail, it is reasonable to assume that the health of the user 

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## Links

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---

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