# Power MOSFET, N Channel, 60 V, 90 A, 3400 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2480798RL/)

**URL**: https://novapart.co/products/IPB034N06L3GATMA1/power-mosfet-n-channel-60-v-90-a-3400-ohm-to-263
**SKU**: IPB034N06L3GATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.6400
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 167W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 90A |
| Drain Source On State Resistance | 3400µohm |
| Gate Source Threshold Voltage Max | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2480798RL/)

## Jf]R ~~Cin~~ fir 

## **IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G** 

## "%&$!"# **[™] 3 Power-Transistor** 

## **Features** 

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|---|---|---|---|---|---|---|---|---|---|---|
|**Package**<br>**Marking**<br>es||F=%JE%*.+%+<br>F=%JE%*.*%+<br>(+,D(.B<br>(+/D(.B<br>>> > <br>2<br>(tab)<br>1%<br>1<br>ke<br>3<br>ee<br>ee||||F=%JE%**(%+<br>(+/D(.B<br> Sa <br>1<br>2 3|||gate<br> cia}<br>SOUT<br>pin3||
|**Maximum ratings,**||at|W<br>=25 °C, unless otherwise specified||||||||
|**Parameter**||||**Symbol Conditions**||||**Value**||**Unit**|
|||||_I_9<br>_T_8<br>*#||||1(||6|
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|||||_I_9$]bYR<br>_T_8||||+.(|||
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|)#<br>~~Operating and storage ~~<br>~~IEC climatic category; ~~<br>J-STD20 and JESD22|||~~temperature ~~<br> ~~DIN IEC 68-1 Po~~|_T_W _T_aT<br> ~~Po~~<br>~~Po~~||||~~-55 ... 175~~<br>~~55/175/56~~||~~°C~~|
|*#<br>Current is limited by bondwire; with an||||aU@8<br>0<br>=0.9<br>the chip is able|to||carry 164 A.||||
|+#<br>See figure 3 for more detailed information|||||||||||
|,#<br>Seefigure13formore|more|more|detailedinformation|information|||||||



## **IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G** 

|**IPB034N06L3 G**<br>**IPI037N06L3 G**<br>**IPP037N06L3 G**<br><n<br>Cinfineon|**IPB034N06L3 G**<br>**IPI037N06L3 G**<br>**IPP037N06L3 G**<br><n<br>Cinfineon|**IPB034N06L3 G**<br>**IPI037N06L3 G**<br>**IPP037N06L3 G**<br><n<br>Cinfineon|**IPB034N06L3 G**<br>**IPI037N06L3 G**<br>**IPP037N06L3 G**<br><n<br>Cinfineon|**IPB034N06L3 G**<br>**IPI037N06L3 G**<br>**IPP037N06L3 G**<br><n<br>Cinfineon|**IPB034N06L3 G**<br>**IPI037N06L3 G**<br>**IPP037N06L3 G**<br><n<br>Cinfineon|**IPB034N06L3 G**<br>**IPI037N06L3 G**<br>**IPP037N06L3 G**<br><n<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Thermal characteristics**|||||||
|Thermalresistance,|_R_aU@8|~~minimalfootprint~~|%<br>~~ff]~~|%<br>~~ff]~~|(&1<br>~~ff]2|~~|A'L|
|Thermal resistance,|_R_aU@6|~~minimalfootprint~~|<br>~~ff]~~|<br>~~ff]~~|~~ff]2|~~||
|||-#<br>~~minimal footprint~~|%<br>~~ff]~~|%<br>~~ff]~~|,(<br>~~ff] 2 |~~||
|**Electrical characteristics,**<br>W<br>at<br>=25 °C, unless otherwise specified|||||||
|**Static characteristics**<br>~~Drain-sourcebreakdownvoltage~~<br>~~P|~~<br>~~=0V,=1mAPf~~|||||||
|~~Drain-sourcebreakdownvoltage~~|_V_"7H#9II <br>~~P|~~|_V_=I<br>_I_9<br>~~P|~~<br>~~=0V,=1mA~~|.(<br>~~Pf~~|%<br>~~Pf~~|%|K|
|~~Drain-source breakdown voltage~~|_V_=I"aU#<br>~~P|~~|_V_9I4_V_=I _I_9<br>~~P|~~<br>~~=0V, =1mA ~~|)&*<br> ~~Pf~~|)&/<br>~~Pf~~|*&*||
|Zero<br>gate<br>voltage<br>drai<br>t<br>ero gate voltage<br>drain curren<br>~~Gate-sourceleakagecurrent~~<br>~~po~~|_I_9II<br>~~po~~|_V_9I<br>_V_=I<br>_T_W<br>“60V,<br>=v,<br>=25 °C|%|(&)|)|t6|
|||_V_9I<br>_V_=I<br>_T_W<br>=60 V,<br>=0 V,<br>=125 °C<br>~~=20V,~~<br>~~=0V Pf~~|%<br>~~Pf~~|)(<br>~~Pf~~|)((<br>~~Pf~~||
|~~Gate-sourceleakagecurrent~~<br>~~po~~|_I_=II<br>~~po~~|_V_=I<br>_V_9I<br>~~=20V,~~<br>~~=0V Pf~~|%<br>~~Pf~~|)<br>~~Pf~~|)((<br>~~Pf~~|[6|
|~~Gate-source leakage current~~<br>~~po~~<br>Drain-source on-state resistance|_R_9I"\[#<br>~~po~~|_V_=I<br>_I_9<br>~~=20 V,~~<br>~~=0V Pf~~<br>=10V,<br>=90A|%<br>~~Pf~~<br> ~~Pf]~~|+&(<br>~~Pf~~<br>~~Pf]~~|+&/<br>~~Pf~~<br>~~Pf]~~|Z"|
|||_V_=I<br>_I_9<br>"IC9#|%|*&/|+&,||
|Drain-source on-state resistance|_R_9I"\[#|_V_=I<br>_I_9<br>=4.5V,<br>=45A|%<br> ~~Pf]~~|+&1<br>~~Pf]~~|-&/<br>~~Pf]~~||
|||_V_=I<br>_I_9<br>"IC9#|%|+&.|-&,||
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|-#<br>Device on 40 mm x40 mm x 1.5 mm epoxy PCB FR4 with6c<br>(one layer, 70 um thick) copper area for drain<br>connection. PCB is vertical in still air.|||||||



-# 

|**IPB034N06L3 G**<br>**IPI037N06L3 G**<br>**IPP037N06L3 G**<br>om re<br>Cinfineon|**IPB034N06L3 G**<br>**IPI037N06L3 G**<br>**IPP037N06L3 G**<br>om re<br>Cinfineon|**IPB034N06L3 G**<br>**IPI037N06L3 G**<br>**IPP037N06L3 G**<br>om re<br>Cinfineon|**IPB034N06L3 G**<br>**IPI037N06L3 G**<br>**IPP037N06L3 G**<br>om re<br>Cinfineon|**IPB034N06L3 G**<br>**IPI037N06L3 G**<br>**IPP037N06L3 G**<br>om re<br>Cinfineon|**IPB034N06L3 G**<br>**IPI037N06L3 G**<br>**IPP037N06L3 G**<br>om re<br>Cinfineon|**IPB034N06L3 G**<br>**IPI037N06L3 G**<br>**IPP037N06L3 G**<br>om re<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics**|||||||
||_C_V|_V_=I<br>_V_9I<br>_f_<br>" K<br>=0V,<br>=30V,<br>=1<br>~~P|~~|%|)((((|)+(((|]<|
|j<br>Output capacitance<br>~~Reversetransfercapacitance~~|_C_\<br>~~P|~~||%<br>~~Pf]~~|)/((<br>~~Pf]~~|*+((<br>~~Pf]~~||
|~~Reversetransfercapacitance~~|_C__<br>~~P|~~||%<br>~~Pf]~~|/(<br>~~Pf]~~|%<br>~~Pf]~~||
|~~Reverse transfer capacitance~~|_t_Q"\[#<br>~~P|~~|_V_99<br>_V_=I<br>_I_9<br>_R_=<br>"<br>~~P|~~|%<br>~~Pf]~~|*-<br>~~Pf]~~|%<br>~~Pf]~~|[|
||_t__||%|/0|%||
||_t_Q"\SS#||%|.,|%||
||_t_S||%|)+|%||
|#<br>Gate Char e Characteristics|||||||
||_Q_T|_V_99<br>_I_9<br>_V_=I<br>=0to4.5V|%|+,|%|[8|
||_Q_TQ||%|))|%||
|witching charge|_Q_d||%|*1|%||
||_Q_T||%|-1|/1||
||_V_]YNaRNb||%|+&,|%|K|
||_Q_\|_V_99<br>_V_=I|%|0+|))(|[8|
|**Reverse Diode**<br>~~Diodecontinousforwardcurrent~~<br>~~P|~~<br>~~Pf]~~|||||||
|~~Diodecontinousforwardcurrent~~|_I_I<br>~~P|~~|_T_8<br>~~P|~~<br>=25 °C|%<br>~~Pf]~~|%<br>~~Pf]~~|1(<br>~~Pf]~~|6|
|~~Diode continous forward current~~|_I_I$]bYR<br>~~P|~~||%<br>~~Pf]~~|%<br>~~Pf]~~|+.(<br>~~Pf]~~||
|Diode forward<br>volt<br>iode forward<br>voltage|_V_I9|_V_=I<br>_I_<<br>_T_W<br>HOM<br>S904,<br>=25 °C|%|(&1-|)&*|K|
||_t___|_V_H<br>_I_<4_I_I<br>Q_i_<'Q_t_|%|,,|%|[|
||_Q___||%|..|%|[8|
|.#<br>See figure 16 for gate charge parameter definition|||||||



.# 

**IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G** 

## **1 Power dissipation** 

_P_ a\a4S" _T_ 8# 

## **2 Drain current** 

_I_ 94S" _T_ 8 ); _V_ =I" 

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**----- Start of picture text -----**<br>
200 100<br>160 80<br>120 60<br>80 40<br>40 20<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>T  C [°C] T  C [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>4S" V  9I yy T  8 -=25 °C; D  4( Z  aU@84S" t  ]#<br>parameter: t  ] parameter: D  4 t  ]' T<br>10 [3] 10 [0]<br>limited by on-state<br>_R`V`aN[PR 1us<br>10 us (&-<br>10 [2] 100 us<br>(&*<br>1ms<br>(&)<br>10 [1] 10 ms 10 [-1] Yj<br>(&(-<br>98 A<br>(&(*<br>(&()<br>single pulse<br>10 [0]<br>10 [-1] 10 [-2]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V  DS [V] t  p [s]<br> [W]  [A]<br>P  tot I  D<br> [A]  [K/W]<br>I  D<br> thJC<br>Z<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

_I_ 94S" _V_ 9I yy _T_ 8 -=25 °C; _D_ 4( 

**IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G** 

**==> picture [124 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 Typ. output characteristics<br>**----- End of picture text -----**<br>


**==> picture [209 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
I  94S" V  9I ); T  W =25 °C<br>parameter: V  =I<br>320<br>8V 45V<br>10Vp 5V<br>240<br>4V<br>160<br>3.5V<br>80<br>3V<br>0<br>0 1 2 3 4 5<br>V  DS [V]<br>7 Typ. transfer characteristics<br>I  94S" V  =I ys | 9I [h5*h] [I] 9 [h] [R] 9I"\[#ZNe<br>parameter: T  W<br>320<br>240<br>160<br>80<br>0<br>0 1 2 3 4 5<br>V  GS [V]<br> [A]<br>I  D<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
6 Typ. drain-source on resistance<br>**----- End of picture text -----**<br>


**==> picture [211 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
R  9I"\[#4S" I  9 ); T  W =25 °C<br>parameter: V  =I<br>15<br>3V 3.5V av<br>12<br>Gq 9<br>6<br>45V<br>5vV 6V<br>3 )(K<br>0<br>10V<br>0 50 100 150 200 250<br>I  D [A]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


**8 Typ. forward transconductance** _g_ S`4S" _I_ 9 ); _T_ W =25°C 

**==> picture [204 x 243] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>160<br>120<br>80<br>40<br>0<br>0 50 100 150<br>I  D [A]<br> [S]<br> fs<br>g<br>**----- End of picture text -----**<br>


**IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G** 

## **9 Drain-source on-state resistance** 

_R_ 9I"\[#4S" _T_ W ); _I_ 9 =90A; _V_ =I 

## **10 Typ. gate threshold voltage** 

_V_ =I"aU#4S" _T_ W ); _V_ =I4 _V_ 9I 

**==> picture [9 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
I  9<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
8 2.5<br>7<br>2<br>6<br>930 pA<br>5<br>1.5<br>ZNe<br>4<br>af]<br>1<br>3<br>| Teer 93 yA<br>2<br>0.5<br>1<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T  j [°C] T  j [°C]<br>11 Typ. capacitances 12 Forward characteristics of reverse diode<br> 4S" V  9I ); V  =I =0V; f =1 " K I  <4S" V  I9#<br>parameter: T  W<br>10 [5] 10 [3]<br>8V``<br>10 [4]<br>175 °C, 98%<br>10 [2]<br>8\``<br>10 [3]<br>10 [1]<br>8_``<br>10 [2]<br>[<br>10 [1] 10 [0]<br>0 20 40 60 0 0.5 1 1.5 2<br>V  DS [V] V  SD [V]<br>]<br>[m  [V]<br>R  DS(on) V  GS(th)<br>[pF]  [A]<br>C I  F<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

_C_ 4S" _V_ 9I ); _V_ =I =0V; _f_ =1 " K 

**IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G** 

**==> picture [125 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
13 Avalanche characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
14 Typ. gate charge<br>**----- End of picture text -----**<br>


**==> picture [65 x 26] intentionally omitted <==**

**----- Start of picture text -----**<br>
V  =I4S"4S" Q  TNaR ); I  9<br>parameter: V  99<br>**----- End of picture text -----**<br>


**==> picture [428 x 597] intentionally omitted <==**

**----- Start of picture text -----**<br>
I  6I4S" t  6K ); R  =I =25 " V  =I4S"4S" Q  TNaR ); I  9 =90A pulsed<br>parameter: T  W"`aN_a# parameter: V  99<br>1000 12<br>30V<br>10<br>12V VA 48V<br>100 8<br>25°C Y 4<br>100 °C 6<br>150 °C y<br>10 4<br>2<br>1 0<br>1 10 100 1000 0 50 100 150<br>t  AV [µs] Q  gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V  7H"9II#4S" T  W ); I  9 =1mA<br>65<br>V =I<br>Q g<br>60<br>V T `"aU#<br>55<br>Q T"aU# Q  `d Q gate<br>50 Q  T` Q  TQ<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [A]  [V]<br>I  AS V  GS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


**IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G** 

**PG-TO-220-3** 

**IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G** 

**PG-TO-262-3 (I²-Pak)** 

**IPP037N06L3 G** 

## **IPB034N06L3 G IPI037N06L3 G** 

## **PG-TO-263 (D²-Pak)** 

**IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G** 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

**Legal Disclaimer** Legal The information Disclaimer given in this document shall in no event be regarded as a guarantee of The conditions information or characteristics. given in this With document respect to any shall examples in no event or hints be given regarded herein, as any a typical guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein values stated herein and/or any information regarding the application of the device, and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any Infineon and Technologies all warranties hereby and disclaims liabilities any and of all any warranties kind, including and liabilities without of any limitation, kind, warranties of noninfringement including without of intellectual limitation, warranties property of rights non-infringement of any third of party. intellectual property rights of any third party. 

For **Information** further information on technology, delivery terms and conditions and prices, please contact the nearest For further Infineon information Technologies on technology, Office delivery (www.infineon.com). terms and conditions and prices, please 

contact the nearest Infineon Technologies Office (www.infineon.com). 

Due to technical requirements, components may contain dangerous substances. For information on **Warnings** the types in question, please contact the nearest Infineon Technologies Office. The Infineon Due to technical requirements, components may contain dangerous substances. For information Technologies component described in this Data Sheet may be used in life-support devices or systems on the types in question, please contact the nearest Infineon Technologies Office. and/or automotive, aviation and aerospace applications or systems only with the express written approval Infineon Technologies of Infineon components Technologies, may be if used a failure in life-support of such devices components or systems can only reasonably with be expected to cause the express the failure written of approval that life-support, of Infineon Technologies, automotive, if aviation a failure of and such aerospace components device can or system or to affect the reasonably safety be or expected effectiveness to cause of that the failure device of or that system. life-support Life device support or devices system or or to systems affect are intended to be implanted the safety or in effectiveness the human of body that device or to support or system. and/or Life support maintain devices and or sustain systems and/or are protect human life. If they intended fail, to it be is reasonable implanted in to the assume human body that or the to health support of and/or the user maintain or other and sustain persons may be endangered. 

and/or protect human life. If they fail, it is reasonable to assume that the health of the user 

or other persons may be endangered. 



## Links

- [View this product on Novapart](https://novapart.co/products/IPB034N06L3GATMA1/power-mosfet-n-channel-60-v-90-a-3400-ohm-to-263)
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- [Supplier page](https://es.farnell.com/infineon/ipb034n06l3gatma1/mosfet-n-ch-60v-90a-to-263-3/dp/2480798RL)
---

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