# Power MOSFET, N Channel, 80 V, 160 A, 3000 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1775526/)

**URL**: https://novapart.co/products/IPB030N08N3GATMA1/power-mosfet-n-channel-80-v-160-a-3000-ohm-to-263
**SKU**: IPB030N08N3GATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.5400
**Stock**: 500+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 214W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 160A |
| Drain Source On State Resistance | 3000µohm |
| Gate Source Threshold Voltage Max | 2.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1775526/)

**IPB030N08N3 G** 

## "%&$!"# **[™] 3 Power-Transistor** 

## **Features** 

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)# *# +# 

## **IPB030N08N3 G** 

|**IPB030N08N3 G**<br><n<br>Cinfineon|**IPB030N08N3 G**<br><n<br>Cinfineon|**IPB030N08N3 G**<br><n<br>Cinfineon|**IPB030N08N3 G**<br><n<br>Cinfineon|**IPB030N08N3 G**<br><n<br>Cinfineon|**IPB030N08N3 G**<br><n<br>Cinfineon|**IPB030N08N3 G**<br><n<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Thermal characteristics**|||||||
|Thermalresistance,|_R_T@8|~~minimalfootprint~~|%<br>~~ff]~~|%<br>~~ff]~~|(&/<br>~~ff]2|~~|A'K|
|Thermal resistance,|_R_T@6|~~minimalfootprint~~|<br>~~ff]~~|<br>~~ff]~~|~~ff]2|~~||
|||*<br>,#<br>~~minimal footprint~~|%<br>~~ff]~~|%<br>~~ff]~~|,(<br>~~ff] 2 |~~||
|**Electrical characteristics,**<br>V<br>at<br>=25 °C, unless otherwise specified|||||||
|**Static characteristics**<br>~~Drain-sourcebreakdownvoltage~~<br>~~P|~~<br>~~=0V,=1mAPf~~|||||||
|~~Drain-sourcebreakdownvoltage~~|_V_"7G#9HH <br>~~P|~~|_V_=H<br>_I_9<br>~~P|~~<br>~~=0V,=1mA~~|0(<br>~~Pf~~|%<br>~~Pf~~|%|J|
|~~Drain-source breakdown voltage~~|_V_=H"T#<br>~~P|~~|_V_9H4_V_=H _I_9<br>~~P|~~<br>~~=0V, =1mA ~~|*<br> ~~Pf~~|*&0<br>~~Pf~~|+&-||
|Zero<br>gate<br>voltage<br>drai<br>t<br>ero gate voltage<br>drain curren<br>~~Gate-sourceleakagecurrent~~<br>~~po~~|_I_9HH<br>~~po~~|_V_9H<br>_V_=H<br>_T_V<br>“80V,<br>ON,<br>=25 °C|%|(&)|)|r6|
|||_V_9H<br>_V_=H<br>_T_V<br>=80 V,<br>=0 V,<br>=125 °C<br>~~=20V,~~<br>~~=0V Pf~~|%<br>~~Pf~~|)(<br>~~Pf~~|)((<br>~~Pf~~||
|~~Gate-sourceleakagecurrent~~<br>~~po~~|_I_=HH<br>~~po~~|_V_=H<br>_V_9H<br>~~=20V,~~<br>~~=0V Pf~~|%<br>~~Pf~~|)<br>~~Pf~~|)((<br>~~Pf~~|Z6|
|~~Gate-source leakage current~~<br>~~po~~<br>Drain-source on-state resistance|_R_9H"[Z#<br>~~po~~|_V_=H<br>_I_9<br>~~=20 V,~~<br>~~=0V Pf~~<br>=10V,<br>=100A~~Pf]~~|%<br>~~Pf~~<br>~~Pf]~~|*&-<br>~~Pf~~<br>~~Pf]~~|+&(<br>~~Pf~~<br>~~Pf]~~|Y"|
|||_V_=H<br>_I_9|%|+&+|-&-||
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|,#<br>~~| =100A~~<br>~~Pf of~~<br>Device on 40 mm x40 mm x 1.5 mm epoxy PCB FR4 with6c_<br>(one layer, 70<br>m thick) copper area for drain<br>connection. PCB is vertical in still air.|||||||



,# 

## **IPB030N08N3 G** 

|**IPB030N08N3 G**<br>om re<br>Cinfineon|**IPB030N08N3 G**<br>om re<br>Cinfineon|**IPB030N08N3 G**<br>om re<br>Cinfineon|**IPB030N08N3 G**<br>om re<br>Cinfineon|**IPB030N08N3 G**<br>om re<br>Cinfineon|**IPB030N08N3 G**<br>om re<br>Cinfineon|**IPB030N08N3 G**<br>om re<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics**|||||||
||_C_U__|_V_=H<br>_V_9H<br>_f_<br>" J<br>=0V,<br>=40V,<br>=1<br>~~P|~~|%|.)((|0))(|\<|
|;<br>Output capacitance<br>~~Reversetransfercapacitance~~|_C_[__<br>~~P|~~||%<br>~~Pf]~~|).,(<br>~~Pf]~~|*)0(<br>~~Pf]~~||
|~~Reversetransfercapacitance~~|_C_^__<br>~~P|~~||%<br>~~Pf]~~|-1<br>~~Pf]~~|%<br>~~Pf]~~||
|~~Reverse transfer capacitance~~|_t_P"[Z#<br>~~P|~~|_V_99<br>_V_=H<br>_I_9<br>_R_=<br>"<br>~~P|~~|%<br>~~Pf]~~|*+<br>~~Pf]~~|%<br>~~Pf]~~|Z_|
||_t_^||%|/1|%||
||_t_P"[RR#||%|,-|%||
||_t_R||%|),|%||
|#<br>Gate Char e Characteristics|||||||
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|**Reverse Diode**<br>~~Diodecontinousforwardcurrent~~<br>~~P|~~<br>~~Pf]~~|||||||
|~~Diodecontinousforwardcurrent~~|_I_H<br>~~P|~~|_T_8<br>~~P|~~<br>=25 °C|%<br>~~Pf]~~|%<br>~~Pf]~~|).(<br>~~Pf]~~|6|
|~~Diode continous forward current~~|_I_H$\aX_Q<br>~~P|~~||%<br>~~Pf]~~|%<br>~~Pf]~~|.,(<br>~~Pf]~~||
|Diode<br>f<br>d<br>volt<br>iode forward<br>voltage|_V_H9|_V_=H<br>_I_<<br>_T_V<br>=0V,<br>=100A,<br>=25 °C|%|)&(|)&*|J|
||_t_^^|_V_G<br>P_i_<'P_t_<br>C|%|/+|%|Z_|
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|-#<br>See figure 16 for gate charge parameter definition|||||||



-# 

**IPB030N08N3 G** 

## **1 Power dissipation** 

_P_ `[`4R" _T_ 8# 

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**----- Start of picture text -----**<br>
250<br>200<br>150<br>100<br>50<br>0<br>0 50 100 150 200<br>T  C [°C]<br>3 Safe operating area<br>4R" V  9H ); T  8 25 °C; D  4(<br>parameter: t  \<br>10 [3]<br>limited by on-state 1 C<br>^Q_U_`MZOQ<br>10 C<br>100 C<br>10 [2] 1ms<br>10 ms<br>98<br>10 [1]<br>10 [0]<br>10 [-1] 10 [0] 10 [1] 10 [2]<br>V  DS [V]<br> [W]<br> tot<br>P<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

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**----- Start of picture text -----**<br>
I  94R" V  9H ); T  8 25 °C; D  4(<br>**----- End of picture text -----**<br>


## **2 Drain current** 

_I_ 94R" _T_ 8 ); _V_ =H" 

**==> picture [205 x 559] intentionally omitted <==**

**----- Start of picture text -----**<br>
180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 50 100 150 200<br>T  C [°C]<br>4 Max. transient thermal impedance<br> `T@84R"4R" t  \##<br>parameter: D  4 t  \' T<br>10 [0]<br>(&-<br>f<br>(&*<br>10 [-1] (&)<br>(&(-<br>(&(*<br>(&()<br>single pulse<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t  p [s]<br> [A]<br>I  D<br> [K/W]<br> thJC<br>Z<br>**----- End of picture text -----**<br>


**4 Max. transient thermal impedance** _Z_ `T@84R"4R" _t_ \## 

**IPB030N08N3 G** 

## **5 Typ. output characteristics** 

## **6 Typ. drain-source on resistance** 

_I_ 94R" _V_ 9H ); _T_ V 

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**----- Start of picture text -----**<br>
4R" V  9H ); T  V =25 °C R  9H"[Z#4R" I  9 ); T  V =25 °C<br>parameter: V  =H parameter: V  =H<br>500 8<br>won<br>5V 5.5V 6V<br>400 7V<br>6<br>300 6V Gq<br>4<br>200 ™<br>5.5V<br>10V<br>2<br>100 5vV<br>45V<br>0 0<br>0 1 2 3 4 5 0 100 200 300 400<br>V  DS [V] I  D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>4R" V  =H ys | 9H [[g5*g]] [[I]] 9 [[g]] [[R]] 9H"[Z#YMd g  R_4R" I  9 yy T  V =25°C<br>parameter: T  V<br>300 300<br>250<br>200 200<br>150<br>100 100<br>50<br>0 0<br>0 2 4 6 8 0 100 200 300<br>V  GS [V] I  D [A] [A]<br>]<br>[m<br> [A]<br>I  D<br> DS(on)<br>R<br> [A]  [S]<br>I  D g  fs<br>**----- End of picture text -----**<br>


**7 Typ. transfer characteristics** 

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**----- Start of picture text -----**<br>
I  94R" V  =H ys | 9H [[g5*g]] [[I]] 9 [[g]] [[R]] 9H"[Z#YMd<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
300<br>200<br>100<br>0<br>0 100 200 300<br>I  D [A] [A]<br> [S]<br> fs<br>g<br>**----- End of picture text -----**<br>


**IPB030N08N3 G** 

## **9 Drain-source on-state resistance** 

_R_ 9H"[Z#4R" _T_ V ); _I_ 9 =100A; _V_ =H 

## **10 Typ. gate threshold voltage** 

_V_ =H"`T#4R" _T_ V ); _V_ =H4 _V_ 9H 

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**----- Start of picture text -----**<br>
I  9<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
6<br>5<br>4<br>YMd<br>a<br>3<br>`e\<br>2<br>1<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

_C_ 4R" _V_ 9H OV; _V_ =H _f_ =1 " J 

**==> picture [205 x 243] intentionally omitted <==**

**----- Start of picture text -----**<br>
4<br>3<br>1550 A<br>155 A<br>2<br>1<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [V]<br> GS(th)<br>V<br>**----- End of picture text -----**<br>


## **12 Forward characteristics of reverse diode** 

_I_ <4R" _V_ H9# 

_T_ V 

**==> picture [203 x 243] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000<br>8U__<br>8[__<br>1000<br>aati<br>8^__<br>100<br>10<br>0 20 40 60 80<br>V  DS [V]<br>[pF]<br>C<br>**----- End of picture text -----**<br>


**==> picture [201 x 244] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [3]<br>10 [2] 175 °C, 98%<br>10 [1]<br>10 [0]<br>0 0.5 1 1.5 2<br>V  SD [V]<br> [A]<br>I  F<br>**----- End of picture text -----**<br>


**IPB030N08N3 G** 

**==> picture [125 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
13 Avalanche characteristics<br>**----- End of picture text -----**<br>


## **14 Typ. gate charge** 

**==> picture [65 x 26] intentionally omitted <==**

**----- Start of picture text -----**<br>
V  =H4R"4R" Q  SM`Q ); I  9<br>parameter: V  99<br>**----- End of picture text -----**<br>


**==> picture [428 x 597] intentionally omitted <==**

**----- Start of picture text -----**<br>
I  6H4R" t  6J ); R  =H =25 " V  =H4R"4R" Q  SM`Q ); I  9 =100 A pulsed<br>parameter: T  V"_`M^`# parameter: V  99<br>1000 12<br>40V<br>10<br>20V 60V<br>100 8<br>25°C<br>100 °C 6<br>150°C<br>10 4<br>2<br>1 0<br>0.1 1 10 100 1000 0 50 100<br>t  AV [µs] Q  gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V  7G"9HH#4R" T  V ); I  9 =1mA<br>90<br>V =H<br>Q g<br>80<br>V S _"`T#<br>70<br>Q S"`T# Q  _c Q gate<br>60 Q  S_ Q  SP<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [A]  [V]<br>I  AV V  GS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


**IPB030N08N3 G** 

**PG-TO263-7 (D²-Pak)** 

**IPB030N08N3 G** 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## **Legal** Legal **Disclaimer** Disclaimer 

The The information information given given in this in document this document shall in no shall event in be no regarded event as be a regarded guarantee of as a guarantee of conditions or conditions characteristics. or characteristics. With respect With respect to any to examples any examples or or hints hints given given herein, herein, any any typical typical values stated herein values and/or stated any information herein and/or any regarding information the regarding application the application of the device, of the Infineon device, Technologies hereby disclaims Infineon any and Technologies all warranties hereby disclaims and liabilities any and of all warranties any kind, and including liabilities of without any kind, limitation, warranties of nonincluding infringement without of limitation, intellectual warranties property of non-infringement rights of any third of intellectual party. property rights 

of any third party. 

> **Information** For further information on technology, delivery terms and conditions and prices, please contact the 

> For nearest further Infineon information Technologies on technology, Office delivery (www.infineon.com). terms and conditions and prices, please 

contact the nearest Infineon Technologies Office (www.infineon.com). 

> **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the Due to types technical in requirements, question, please components contact may contain the dangerous nearest substances. Infineon Technologies For information Office. The Infineon Technologies on the types in question, component please described contact the in nearest this Data Infineon Sheet Technologies may be Office. used in life-support devices or systems 

> Infineon and/or Technologies automotive, components aviation may and be aerospace used in life-support applications devices or or systems systems only only with with the express written 

> the approval express of written Infineon approval Technologies, of Infineon Technologies, if a failure if a of failure such of such components components can can reasonably be expected to 

> reasonably cause the be failure expected of to that cause life-support, the failure of automotive, that life-support aviation device and or system aerospace or to affect device or system or to affect the the safety safety or or effectiveness effectiveness of that of device that device or system. or Life system. support Life devices support or systems devices are or systems are intended to be 

> intended implanted to be in implanted the human in the body human or body to support or to support and/or and/or maintain maintain and and sustain sustain and/or protect human life. If they and/or fail, protect it is human reasonable life. If they to assume fail, it is reasonable that the health to assume of the that user the health or other of the persons user may be endangered. 

or other persons may be endangered. 



## Links

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---

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