# Power MOSFET, N Channel, 100 V, 120 A, 2300 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2443379/)

**URL**: https://novapart.co/products/IPB027N10N3GATMA1/power-mosfet-n-channel-100-v-120-a-2300-ohm-to-263
**SKU**: IPB027N10N3GATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.0600
**Stock**: 1000+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 120A |
| Drain Source On State Resistance | 2300µohm |
| Gate Source Threshold Voltage Max | 2.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2443379/)

**IPB027N10N3 G** 

## "%&$!"# **[®] 3 Power-Transistor** 

## **Features** 

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|---|---|---|---|---|---|---|---|---|
|Maximum ratings,|at|V|=25|°C,|unless|otherwise|specified|
|Parameter|Symbol|Conditions|Value|Unit|
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)# 

*# 

## **IPB027N10N3 G** 

|**IPB027N10N3 G**<br>om re<br>Cinfineon|**IPB027N10N3 G**<br>om re<br>Cinfineon|**IPB027N10N3 G**<br>om re<br>Cinfineon|**IPB027N10N3 G**<br>om re<br>Cinfineon|**IPB027N10N3 G**<br>om re<br>Cinfineon|**IPB027N10N3 G**<br>om re<br>Cinfineon|**IPB027N10N3 G**<br>om re<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Thermal characteristics**|||||||
|Thermalresistance,|_R_T@8|~~minimalfootprint~~|%<br>~~ff]~~|%<br>~~ff]~~|(&-<br>~~ff]2|~~|A'K|
|Thermal resistance,|_R_T@6|~~minimalfootprint~~|<br>~~ff]~~|<br>~~ff]~~|~~ff]2|~~||
|||*<br>+#<br>~~minimal footprint~~|%<br>~~ff]~~|%<br>~~ff]~~|,(<br>~~ff] 2 |~~||
|**Electrical characteristics,**<br>V<br>at<br>=25 °C, unless otherwise specified|||||||
|**Static characteristics**<br>~~Drain-sourcebreakdownvoltage~~<br>~~P|~~<br>~~=0V,=1mAPf~~|||||||
|~~Drain-sourcebreakdownvoltage~~|_V_"7G#9HH <br>~~P|~~|_V_=H<br>_I_9<br>~~P|~~<br>~~=0V,=1mA~~|)((<br>~~Pf~~|%<br>~~Pf~~|%|J|
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|+#<br>~~az =100A~~<br>~~| ft~~<br>Device on 40 mm x40 mm x 1.5 mm epoxy PCB FR4 with6c_<br>(one layer, 70<br>m thick) copper area for drain<br>connection. PCB is vertical in still air.|||||||



+# 

## **IPB027N10N3 G** 

|**IPB027N10N3 G**<br>om re<br>Cinfineon|**IPB027N10N3 G**<br>om re<br>Cinfineon|**IPB027N10N3 G**<br>om re<br>Cinfineon|**IPB027N10N3 G**<br>om re<br>Cinfineon|**IPB027N10N3 G**<br>om re<br>Cinfineon|**IPB027N10N3 G**<br>om re<br>Cinfineon|**IPB027N10N3 G**<br>om re<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics**|||||||
||_C_U__|_V_=H<br>_V_9H<br>_f_<br>" J<br>=0V,<br>=50V,<br>=1<br>~~P|~~|%|)))((|),0((|\<|
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|~~Reversetransfercapacitance~~|_C_^__<br>~~P|~~||%<br>~~Pf]~~|.1<br>~~Pf]~~|%<br>~~Pf]~~||
|~~Reverse transfer capacitance~~|_t_P"[Z#<br>~~P|~~|_V_99<br>_V_=H<br>_I_9<br>_R_=<br>"<br>~~P|~~|%<br>~~Pf]~~|+,<br>~~Pf]~~|%<br>~~Pf]~~|Z_|
||_t_^||%|-0|%||
||_t_P"[RR#||%|0,|%||
||_t_R||%|*0|%||
|#<br>Gate Char e Characteristics|||||||
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|,#<br>See figure 16 for gate charge parameter definition|||||||



,# 

**IPB027N10N3 G** 

## **1 Power dissipation** 

_P_ `[`4R" _T_ 8# 

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350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 50 100 150 200<br>T  C [°C]<br>3 Safe operating area<br>4R" V  9H yy T  8 -=25 °C; D  4(<br>parameter: t  \<br>10 [3]<br>^Q_U_`MZOQ limited by on-state 1 C<br>C<br>\ 100 C 10<br>10 [2]<br>1 ms<br>10 ms<br>10 [1]<br>98<br>10 [0]<br>10 [-1]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3]<br>V  DS [V]<br> [W]<br> tot<br>P<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

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**----- Start of picture text -----**<br>
I  94R" V  9H yy T  8 -=25 °C; D  4(<br>**----- End of picture text -----**<br>


## **2 Drain current** 

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**----- Start of picture text -----**<br>
140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 50 100 150 200<br>T  C [°C]<br>4 Max. transient thermal impedance<br> `T@84R"4R" t  \##<br>parameter: D  4 t  \' T<br>10 [0]<br>(&-<br>j<br>(&*<br>10 [-1]<br>(&)<br>(&(-<br>(&(*<br>(&()<br>single pulse<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t  p [s]<br> [A]<br>I  D<br> [K/W]<br> thJC<br>Z<br>**----- End of picture text -----**<br>


**4 Max. transient thermal impedance** _Z_ `T@84R"4R" _t_ \## 

**IPB027N10N3 G** 

## **5 Typ. output characteristics** 

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I  94R" V  9H ); T  V<br>**----- End of picture text -----**<br>


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parameter: V  =H<br>300<br>6V<br>250 55V<br>5V<br>200<br>150 /|<br>100 / 45V<br>50<br>0 (<br>0 1 2<br>V  DS [V]<br>7 Typ. transfer characteristics<br>4R" V  =H ys | 9H [[g5*g]] [[I]] 9 [[g]] [[R]] 9H"[Z#YMd<br>parameter: T  V<br>300<br>|<br>250<br>200<br>150<br>100<br>25 °C<br>50<br>175°C<br>0<br>0 2 4 6<br>V  GS [V]<br> [A]<br>I  D<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **7 Typ. transfer characteristics** 

_I_ 94R" _V_ =H ys | 9H[[g5*g]] _[[I]]_ 9[[g]] _[[R]]_ 9H"[Z#YMd 

## **6 Typ. drain-source on resistance** 

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R  9H"[Z#4R" I  9 ); T  V<br>parameter: V  =H<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
5<br>45V<br>4<br>5V<br>G 3 6V<br>75V<br>10V<br>2<br>1<br>0<br>0 40 80 120 160<br>I  D [A]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


**8 Typ. forward transconductance** 

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**----- Start of picture text -----**<br>
g  R_4R" I  9 ); T  V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
240<br>200<br>160<br>120<br>80<br>40<br>0<br>0 40 80 120 160<br>I  D [A]<br> [S]<br> fs<br>g<br>**----- End of picture text -----**<br>


**IPB027N10N3 G** 

## **9 Drain-source on-state resistance** 

_R_ 9H"[Z#4R" _T_ V ); _I_ 9 =100A; _V_ =H 

## **10 Typ. gate threshold voltage** 

_V_ =H"`T#4R" _T_ V ); _V_ =H4 _V_ 9H 

_I_ 9 

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**----- Start of picture text -----**<br>
6<br>5<br>4<br>G<br>98 %<br>3<br>`e\<br>2<br>1<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

_C_ 4R" _V_ 9H OV; _V_ =H _f_ =1 " J 

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**----- Start of picture text -----**<br>
4<br>3.5<br>3<br>2.5<br>275 A<br>2<br>1.5<br>1<br>0.5<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [V]<br> GS(th)<br>V<br>**----- End of picture text -----**<br>


## **12 Forward characteristics of reverse diode** 

_I_ <4R" _V_ H9# 

_T_ V 

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**----- Start of picture text -----**<br>
10 [5]<br>8U__<br>10 [4]<br>8[__<br>10 [3]<br>8^__<br>10 [2]<br>10 [1]<br>0 20 40 60 80<br>V  DS [V]<br>[pF]<br>C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [3]<br>175 °C, 98%<br>25 °C<br>10 [2]<br>175 °C<br>25 °C, 98%<br>10 [1]<br>10 [0]<br>0 0.5 1 1.5 2<br>V  SD [V]<br> [A]<br>I  F<br>**----- End of picture text -----**<br>


**IPB027N10N3 G** 

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**----- Start of picture text -----**<br>
13 Avalanche characteristics<br>**----- End of picture text -----**<br>


## **14 Typ. gate charge** 

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**----- Start of picture text -----**<br>
I  6H4R" t  6J )s R  =H =25 " V  =H4R" Q  SM`Q ); I  9 =100A pulsed<br>parameter: T  V"_`M^`# parameter: V  99<br>1000 10<br>8<br>80V<br>100<br>50V<br>25°C 6<br>100 °C 20V<br>4<br>10<br>2<br>1 0<br>1 10 100 1000 0 40 80 120 160<br>t  AV [µs] Q  gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V  7G"9HH#4R" T  V ); I  9 =1mA<br>110<br>V =H<br>Q g<br>105<br>100<br>V S _"`T#<br>95<br>Q S"`T# Q  _c Q gate<br>90 Q  S_ Q  SP<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [A]  [V]<br>I  AS V  GS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


**IPB027N10N3 G** 

**PG-TO263-3: Outline** 

**IPB027N10N3 G** 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## Legal **Legal Disclaimer** Disclaimer 

The The information information given given in this in this document document shall in shall no event in no be event regarded be regarded as a guarantee as a of guarantee of conditions or characteristics. conditions or characteristics. With respect With to respect any examples to any examples or hints or hints given given herein, herein, any any typical typical values stated herein and/or values any stated information herein and/or regarding any information the application regarding the of the application device, of Infineon the device, Technologies hereby disclaims any Infineon and Technologies all warranties hereby and disclaims liabilities any and of any all warranties kind, including and liabilities without of any limitation, kind, warranties of noninfringement including without of intellectual limitation, warranties property of rights non-infringement of any third of party. intellectual property rights 

of any third party. 

For **Information** further information on technology, delivery terms and conditions and prices, please contact the nearest For further Infineon information Technologies on technology, Office delivery (www. infineon.com). terms and conditions and prices, please 

contact the nearest Infineon Technologies Office (www.infineon.com). 

## Warnings 

Due to technical requirements, components may contain dangerous substances. For information on **Warnings** the types in question, please contact the nearest Infineon Technologies Office. The Infineon Due to technical requirements, components may contain dangerous substances. For information Technologies component described in this Data Sheet may be used in life-support devices or systems on the types in question, please contact the nearest Infineon Technologies Office. and/or automotive, aviation and aerospace applications or systems only with the express written approval Infineon Technologies of Infineon components Technologies, may be if used a failure in life-support of such devices components or systems can only reasonably with be expected to cause the express the failure written of approval that life-support, of Infineon Technologies, automotive, if aviation a failure and of such aerospace components device can or system or to affect the reasonably safety or be effectiveness expected to cause of that the failure device of or that system. life-support Life support device or devices system or or to systems affect are intended to be implanted the safety or in effectiveness the human of body that device or to support or system. and/or Life support maintain devices and or sustain systems and/or are protect human life. If they intended fail, to it is be reasonable implanted in to the assume human body that or the to health support of and/or the user maintain or other and persons sustain may be endangered. 

and/or protect human life. If they fail, it is reasonable to assume that the health of the user 

or other persons may be endangered. 



## Links

- [View this product on Novapart](https://novapart.co/products/IPB027N10N3GATMA1/power-mosfet-n-channel-100-v-120-a-2300-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipb027n10n3gatma1/mosfet-n-ch-100v-120a-to-263-3/dp/2443379)
---

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