# Power MOSFET, N Channel, 100 V, 180 A, 2500 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2212822/)

**URL**: https://novapart.co/products/IPB025N10N3GATMA1/power-mosfet-n-channel-100-v-180-a-2500-ohm-to-263
**SKU**: IPB025N10N3GATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.1900
**Stock**: 1000+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 180A |
| Drain Source On State Resistance | 2500µohm |
| Gate Source Threshold Voltage Max | 2.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2212822/)

**IPB025N10N3 G** 

## "%&$!"# **[™] 3 Power-Transistor** 

## **Features** 

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|Parameter|Symbol|Conditions|Value|Unit|
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## **IPB025N10N3 G** 

|**IPB025N10N3 G**<br><n<br>Cinfineon|**IPB025N10N3 G**<br><n<br>Cinfineon|**IPB025N10N3 G**<br><n<br>Cinfineon|**IPB025N10N3 G**<br><n<br>Cinfineon|**IPB025N10N3 G**<br><n<br>Cinfineon|**IPB025N10N3 G**<br><n<br>Cinfineon|**IPB025N10N3 G**<br><n<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Thermal characteristics**|||||||
|Thermalresistance,|_R__T@8|~~minimalfootprint~~|%<br>~~ff]~~|%<br>~~ff]~~|(&-<br>~~ff]2|~~|A'K|
|Thermal resistance,|_R__T@6|~~minimalfootprint~~|<br>~~ff]~~|<br>~~ff]~~|~~ff]2|~~||
|||*<br>+#<br>~~minimal footprint~~|%<br>~~ff]~~|%<br>~~ff]~~|,(<br>~~ff] 2 |~~||
|**Electrical characteristics,**<br>V<br>at<br>=25 °C, unless otherwise specified|||||||
|**Static characteristics**<br>~~Drain-sourcebreakdownvoltage~~<br>~~P|~~<br>~~=0V,=1mAPf~~|||||||
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+# 

## **IPB025N10N3 G** 

|**IPB025N10N3 G**<br>om re<br>Cinfineon|**IPB025N10N3 G**<br>om re<br>Cinfineon|**IPB025N10N3 G**<br>om re<br>Cinfineon|**IPB025N10N3 G**<br>om re<br>Cinfineon|**IPB025N10N3 G**<br>om re<br>Cinfineon|**IPB025N10N3 G**<br>om re<br>Cinfineon|**IPB025N10N3 G**<br>om re<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics**|||||||
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|,#<br>See figure 16 for gate charge parameter definition|||||||



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**IPB025N10N3 G** 

## **1 Power dissipation** 

_P_ _[_4R" _T_ 8# 

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**----- Start of picture text -----**<br>
350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 50 100 150 200<br>T  C [°C]<br>3 Safe operating area<br>4R" V  9H yy T  8 -=25 °C; D  4(<br>parameter: t  \<br>10 [3]<br>limited by on-state 1 B<br>]Q^U^_MZOQ<br>10 B<br>100 B<br>10 [2]<br>1 ms<br>10 ms<br>10 [1]<br>98<br>10 [0]<br>10 [-1]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3]<br>V  DS [V]<br> [W]<br> tot<br>P<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

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**----- Start of picture text -----**<br>
I  94R" V  9H yy T  8 -=25 °C; D  4(<br>**----- End of picture text -----**<br>


## **2 Drain current** 

_I_ 94R" _T_ 8 ); _V_ =H" 

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**----- Start of picture text -----**<br>
200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 50 100 150 200<br>T  C [°C]<br>4 Max. transient thermal impedance<br> _T@84R"4R" t  \##<br>parameter: D  4 t  \' T<br>10 [0]<br>(&-<br>g<br>(&*<br>10 [-1]<br>(&)<br>(&(-<br>(&(*<br>(&()<br>single pulse<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t  p [s]<br> [A]<br>I  D<br> [K/W]<br> thJC<br>Z<br>**----- End of picture text -----**<br>


**4 Max. transient thermal impedance** _Z_ _T@84R"4R" _t_ \## 

**IPB025N10N3 G** 

## **5 Typ. output characteristics** 

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I  94R" V  9H ); T  V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
parameter: V  =H<br>300<br>250<br>j<br>200<br>150 i |<br>/<br>100<br>50<br>0<br>0 1 2<br>V  DS [V]<br>7 Typ. transfer characteristics<br>4R" V  =H ys | 9H [[f5*f]] [[I]] 9 [[f]] [[R]] 9H"[Z#YMc<br>parameter: T  V<br>300<br>250<br>200<br>150<br>100<br>25 °C<br>50<br>175°C<br>0<br>0 2 4 6<br>V  GS [V]<br> [A]<br>I  D<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **7 Typ. transfer characteristics** 

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I  94R" V  =H ys | 9H [[f5*f]] [[I]] 9 [[f]] [[R]] 9H"[Z#YMc<br>**----- End of picture text -----**<br>


## **6 Typ. drain-source on resistance** 

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**----- Start of picture text -----**<br>
R  9H"[Z#4R" I  9 ); T  V<br>parameter: V  =H<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
6<br>5<br>45V<br>4<br>°<br>3 5V<br>6V<br>75V<br>2 10V<br>1<br>0<br>0 40 80 120 160 200 240 280<br>I  D [A]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


**8 Typ. forward transconductance** 

_g_ R^4R" _I_ 9 ); _T_ V 

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**----- Start of picture text -----**<br>
240<br>200<br>160<br>120<br>80<br>40<br>0<br>0 40 80 120 160<br>I  D [A]<br> [S]<br> fs<br>g<br>**----- End of picture text -----**<br>


**IPB025N10N3 G** 

## **9 Drain-source on-state resistance** 

_R_ 9H"[Z#4R" _T_ V ); _I_ 9 =100A; _V_ =H 

## **10 Typ. gate threshold voltage** 

_V_ =H"_T#4R" _T_ V ); _V_ =H4 _V_ 9H 

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**----- Start of picture text -----**<br>
I  9<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
6<br>5<br>4<br>G<br>3 98 %<br>_d\<br>2<br>1<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

_C_ 4R" _V_ 9H OV; _V_ =H _f_ =1 " I 

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**----- Start of picture text -----**<br>
4<br>3.5<br>3<br>2750 A<br>2.5<br>275 A<br>2<br>1.5<br>1<br>0.5<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [V]<br> GS(th)<br>V<br>**----- End of picture text -----**<br>


## **12 Forward characteristics of reverse diode** 

_I_ <4R" _V_ H9# 

_T_ V 

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**----- Start of picture text -----**<br>
10 [5]<br>8U^^<br>10 [4]<br>8[^^<br>10 [3]<br>8]^^<br>10 [2]<br>10 [1]<br>0 20 40 60 80<br>V  DS [V]<br>[pF]<br>C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [3]<br>175 °C, 98%<br>10 [2]<br>10 [1]<br>25 °C, 98%<br>10 [0]<br>0 0.5 1 1.5 2<br>V  SD [V]<br> [A]<br>I  F<br>**----- End of picture text -----**<br>


**IPB025N10N3 G** 

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**----- Start of picture text -----**<br>
13 Avalanche characteristics<br>**----- End of picture text -----**<br>


## **14 Typ. gate charge** 

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**----- Start of picture text -----**<br>
I  6H4R" t  6J ); R  =H =25 " V  =H4R" Q  SM_Q ); I  9 =100 A pulsed<br>parameter: T  V"^_M]_# parameter: V  99<br>1000 10<br>8<br>80V<br>100<br>50V<br>6<br>100 °C<br>20V<br>150 °C<br>4<br>10<br>2<br>1 0<br>1 10 100 1000 0 40 80 120 160<br>t  AV [µs] Q  gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V  7G"9HH#4R" T  V ); I  9 =1mA<br>110<br>V =H<br>Q g<br>105<br>100<br>V S ^"_T#<br>95<br>Q S"_T# Q  ^b Q gate<br>90 Q  S^ Q  SP<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [A]  [V]<br>I  AS V  GS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


**IPB025N10N3 G** 

**PG-TO263-3: Outline** 

**IPB025N10N3 G** 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## **Legal** Legal **Disclaimer** Disclaimer 

> The The information information given given in this in document this document shall in no shall event in be no regarded event be as a regarded guarantee as of a guarantee of conditions or 

> conditions characteristics. or characteristics. With respect With respect to any to examples any examples or or hints hints given given herein, herein, any any typical typical values stated herein 

> values and/or stated any information herein and/or regarding any information the application regarding the of application the device, of the Infineon device, Technologies hereby disclaims Infineon any and Technologies all warranties hereby and disclaims liabilities any and of all any warranties kind, and including liabilities without of any kind, limitation, warranties of nonincluding infringement without of limitation, intellectual warranties property of non-infringement rights of any third of intellectual party. property rights 

of any third party. 

## Information 

**Information** For further information on technology, delivery terms and conditions and prices, please contact the For nearest further Infineon information Technologies on technology, Office delivery (www.infineon.com). terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on **Warnings** the types in question, please contact the nearest Infineon Technologies Office. The Infineon Due Technologies to technical requirements, component described components in may this contain Data dangerous Sheet may substances. be used For in information life-support devices or systems on and/or the types automotive, in question, aviation please contact and the aerospace nearest Infineon applications Technologies or systems Office. only with the express written Infineon approval Technologies of Infineon components Technologies, may be used if a in failure life-support of such devices components or systems only can with reasonably be expected to the cause express the written failure approval of that of life-support, Infineon Technologies, automotive, if a failure aviation of such and components aerospace can device or system or to affect reasonably the safety be or expected effectiveness to cause of the that failure device of that or life-support system. Life device support or system devices or to affect or systems are intended to be the implanted safety or in effectiveness the human of that body device or to or support system. Life and/or support maintain devices or and systems sustain are and/or protect human life. If intended they fail, to it be is implanted reasonable in the to human assume body that or to the support health and/or of the maintain user or and other sustain persons may be endangered. 

and/or protect human life. If they fail, it is reasonable to assume that the health of the user 

or other persons may be endangered. 



## Links

- [View this product on Novapart](https://novapart.co/products/IPB025N10N3GATMA1/power-mosfet-n-channel-100-v-180-a-2500-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipb025n10n3gatma1/mosfet-n-ch-100v-180a-to263-7/dp/2212822)
---

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