# Power MOSFET, N Channel, 100 V, 180 A, 1700 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2986455/)

**URL**: https://novapart.co/products/IPB017N10N5LFATMA1/power-mosfet-n-channel-100-v-180-a-1700-ohm-to-263
**SKU**: IPB017N10N5LFATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.9100
**Stock**: 1000+
**Lead Time**: 120 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 |
| Qualification | - |
| Power Dissipation | 313W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 180A |
| Drain Source On State Resistance | 1700µohm |
| Gate Source Threshold Voltage Max | 3.3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986455/)

**IPB017N10N5LF** 

## **MOSFET** 

## **OptiMOS[TM]** 

## **Features** 

¢ Ideal for hot-swap and e-fuse applications * Very low on-resistance R DS(on) 

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SS - tab<br>Wo )<br>1 J eo<br>7<br>**----- End of picture text -----**<br>


|**Parameter**|**Value**|**Unit**|
|---|---|---|
|_V_DS|100|V|
|_R_DS(on),max|1.7|mΩ|
|_I_|314|A|
|_I_<br>~~a~~|180<br>~~ee~~|A<br>~~ee~~|
|_I_pulse _V_DS<br>_t_p=10<br>ms)<br>=56 V,<br>~~a~~|10.2<br>~~ee~~|A<br>~~ee~~|



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Drain<br>Pin 4, tab<br>Gate<br>Pin 1<br>Source<br>Pin 2,3,5,6,7<br>**----- End of picture text -----**<br>


|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|IPB017N10N5LF<br>~~Type/OrderingCode |~~|PG-TO 263-7<br>~~|~~|017N10LF<br>|-<br>|



1) J-STD20 and JESD22 

Final Data Sheet 

1 

**OptiMOS[TM] �5�Linear�FET,�100�V IPB017N10N5LF** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

2 

Rev.�2.1,��2017-02-16 

**OptiMOS[TM] �5�Linear�FET,�100�V IPB017N10N5LF** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|180<br>180<br>31|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_C=25°C,_R_thJA=40K/W1)|
|Pulsed drain current2)|_ID,pulse_|-|-|720|A|_T_C=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|979|mJ|_I_D=100A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|313|W|_T_C=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|0.25|0.4|K/W|-|
|Device on PCB,<br>minimal footprint|_R_thJA|-|-|62|K/W|-|
|Device on PCB,<br>6 cm² cooling area1)|_R_thJA|-|-|40|K/W|-|



> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 2) See Diagram 3 for more detailed information 

> 3) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.1,��2017-02-16 

**OptiMOS[TM] �5�Linear�FET,�100�V IPB017N10N5LF** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|100|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.5|3.3|4.1|V|_V_DS=_V_GS,_I_D=270µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|1<br>10|10<br>100|µA|_V_DS=100V,_V_GS=0V,_T_j=25°C<br>_V_DS=100V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-<br>-|2<br>-2|5<br>-5|µA|_V_GS=20V,_V_DS=0V<br>_V_GS=-10V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-|1.5|1.7|mΩ|_V_GS=10V,_I_D=100A|
|Gate resistance1)|_R_G|-|44|66|Ω|-|
|Transconductance|_g_fs|32|63|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=100A|



## **Table�5�����Dynamic�characteristics[1)]** 

|**Table5Dynamiccharacterist**|**ics1)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|650|840|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Output capacitance|_C_oss|-|1900|2500|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|25|-|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|7|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.7Ω|
|Rise time|_t_r|-|28|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.7Ω|
|Turn-off delay time|_t_d(off)|-|128|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.7Ω|
|Fall time|_t_f|-|82|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.7Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|4.4|-|nC|_V_DD=50V,_I_D=180A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|141|-|nC|_V_DD=50V,_I_D=180A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|195|-|nC|_V_DD=50V,_I_D=180A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|7.1|-|V|_V_DD=50V,_I_D=180A,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|209|-|nC|_V_DD=50V,_V_GS=0V|



> 1) Defined by design. Not subject to production test. 

> 2) See ″ Gate charge waveforms ″ for parameter definition 

Final Data Sheet 

Rev.�2.1,��2017-02-16 

4 

**OptiMOS[TM] �5�Linear�FET,�100�V IPB017N10N5LF** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|180|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|720|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.86|1.2|V|_V_GS=0V,_I_F=100A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|62|-|ns|_V_R=50V,_I_F=50A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|113|-|nC|_V_R=50V,_I_F=50A,d_i_F/d_t_=100A/µs|



1) Defined by design. Not subject to production test. Final Data Sheet 

Rev.�2.1,��2017-02-16 

5 

**OptiMOS[TM] IPB017N10N5LF** 

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Final Data Sheet 

6 

**OptiMOS[TM] IPB017N10N5LF** 

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Final Data Sheet 

7 

**OptiMOS[TM] IPB017N10N5LF** 

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**----- Start of picture text -----**<br>
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Final Data Sheet 

8 

**OptiMOS[TM] IPB017N10N5LF** 

**==> picture [528 x 634] intentionally omitted <==**

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**----- Start of picture text -----**<br>
OO Gate charge waveforms<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**OptiMOS[TM] IPB017N10N5LF** 

Final Data Sheet 

10 

**OptiMOS[TM] IPB017N10N5LF** 

## IPB017N10N5LF 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2016-12-15|Release of final version|
|2.1|2017-02-16|Update technology heading|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/IPB017N10N5LFATMA1/power-mosfet-n-channel-100-v-180-a-1700-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipb017n10n5lfatma1/mosfet-n-ch-100v-180a-313w-to/dp/2986455)
---

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