# Power MOSFET, N Channel, 600 V, 15 A, 0.34 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2617443/)

**URL**: https://novapart.co/products/IPAW60R380CEXKSA1/power-mosfet-n-channel-600-v-15-a-034-ohm-to-220fp
**SKU**: IPAW60R380CEXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.7700
**Stock**: 50+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34oh; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS CE |
| Qualification | - |
| Power Dissipation | 31W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 15A |
| Drain Source On State Resistance | 0.34ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2617443/)

**IPAW60R380CE** 

## **MOSFET** 

## **Features** 

## **Applications** 

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Drain<br>Pin 2, Tab ,<br>OE<br>Gate _<br>Pin 1 |<br>Source<br>Pin 3<br>**----- End of picture text -----**<br>


|**Parameter**|**Value**|**Value**|**Unit**||||
|---|---|---|---|---|---|---|
|VDS @Tj,max|650||V||||
|RDS(on),max|380||mΩ||||
|ID.|15||A||||
|Qg.typ|32||nC||||
|ID,pulse|30||A||||
|Eoss@400V|2.8||µJ||||
||||||||
|||**Package**||**Marking**|||
|IPAW60R380CE||PG - TO220 FullPAK<br>WideCreepage||60S380CE||see Appendix A|



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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 

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**1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|15<br>9.5|A|TC=25°C<br>TC=100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|30|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|210|mJ|ID=1.8A; VDD=50V; see table 10|
|Avalanche energy, repetitive|_E_AR|-|-|0.32|mJ|ID=1.8A; VDD=50V; see table 10|
|Avalanche current, repetitive|_I_AR|-|-|1.8|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|50|V/ns|_V_DS=0...480V|
|Gate source voltage(static)|_V_GS|-20|-|20|V|static;|
|Gate source voltage(dynamic)|_V_GS|-30|-|30|V|AC(f>1 Hz)|
|Power dissipation(Full PAK)|_P_tot|-|-|31|W|_T_C=25°C|
|Storage temperature|_T_stg|-40|-|150|°C|-|
|Operating junction temperature|_T_j|-40|-|150|°C|-|
|Mountingtorque|-|-|-|50|Ncm|M2.5 screws|
|Continuous diode forward current|_I_S|-|-|10.6|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|30|A|TC=25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|15|V/ns|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C<br>see table 8|
|Maximum diode commutation speed|dif/dt|-|-|500|A/µs|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C<br>see table 8|
|Power dissipation (Non FullPAK)<br>TO-220|_P_tot|-|-|112|W|-|
|Insulation withstand voltage for<br>TO-220FP|_V_ISO|-|-|2500|V|_V_rms,_T_C=25°C,_t_=1min|



> 1) Limited by Tj max. Maximum duty cycle D=0.50, TO220 equivalent 

> 2) Pulse width tp limited by Tj,max 

> 3)�Identical�low�side�and�high�side�switch�with�identical� _R_ G 

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## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics��(Full�PAK)** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|4|°C/W|-|
|Thermal resistance,junction - ambient|_R_thJA|-|-|80|°C/W|leaded|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6mm (0.063 in.) from case for 10s|



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## **3�����Electrical�characteristics** 

at� _T_ j=25°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|600|-|-|V|_V_GS=0V,_I_D=0.25mA|
|Gate threshold voltage|_V_(GS)th|2.5|3.0|3.5|V|_V_DS=_V_GS,_I_D=0.32mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|1<br>-|µA|_V_DS=600,_V_GS=0V,_T_j=25°C<br>_V_DS=600,_V_GS=0V,_T_j=150°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.34<br>0.89|0.38<br>-|Ω|_V_GS=10V,_I_D=3.8A,_T_j=25°C<br>_V_GS=10V,_I_D=3.8A,_T_j=150°C|
|Gate resistance|_R_G|-|7.5|-|Ω|_f_=1MHz,opendrain|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|700|-|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Output capacitance|_C_oss|-|46|-|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Effective output capacitance,<br>energy related1)|_C_o(er)|-|30|-|pF|_V_GS=0V,_V_DS=0...480V|
|Effective output capacitance,<br>time related2)|_C_o(tr)|-|136|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...480V|
|Turn-on delay time|_t_d(on)|-|11|-|ns|_V_DD=400V,_V_GS=13V,_I_D=4.8A,<br>_R_G=3.4Ω;seetable9|
|Rise time|_t_r|-|9|-|ns|_V_DD=400V,_V_GS=13V,_I_D=4.8A,<br>_R_G=3.4Ω;seetable9|
|Turn-off delay time|_t_d(off)|-|56|-|ns|_V_DD=400V,_V_GS=13V,_I_D=4.8A,<br>_R_G=3.4Ω;seetable9|
|Fall time|_t_f|-|8|-|ns|_V_DD=400V,_V_GS=13V,_I_D=4.8A,<br>_R_G=3.4Ω;seetable9|



## **Table�6�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|4|-|nC|_V_DD=480V,_I_D=4.8A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|16|-|nC|_V_DD=480V,_I_D=4.8A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|32|-|nC|_V_DD=480V,_I_D=4.8A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.4|-|V|_V_DD=480V,_I_D=4.8A,_V_GS=0to10V|



> 1) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�480V 

> 2) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�480V Final Data Sheet 5 

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## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0V,_I_F=4.8A,_T_j=25°C|
|Reverse recovery time|_t_rr|-|290|-|ns|_V_R=400V,_I_F=4.8A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Reverse recovery charge|_Q_rr|-|3.3|-|µC|_V_R=400V,_I_F=4.8A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Peak reverse recovery current|_I_rrm|-|21|-|A|_V_R=400V,_I_F=4.8A,d_i_F/d_t_=100A/µs;<br>see table 8|



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**----- Start of picture text -----**<br>
35 10 [2]<br>a a a —— a<br>1 µs<br>30 S e 10 [1] TMT PSI S 10 µs H Ly<br>RS 100 µs<br>1 ms<br>25<br>10 [0]<br>PNee —_———ZEST 10 ms SNENS= aE FEF<br>20<br>oo PoNT DC<br>5 NS fe 10 [-1] ST NTN<br>15<br>Pe Pe<br>ee 10 [-2] tT ENee<br>10<br>J} _______|_ \______ ee ee ee<br>a a ee a a<br>10 [-3]<br>5<br>a =<br>ee ne a A 0 ee ant<br>0 a 10 [-4] PT TTT ET [EE]<br>0 25 50 75 100 125 150 10 [0] 10 [1] 10 [2] 10 [3]<br>T C [°C] V DS Iv]<br>a P tot=f( T C) I D=f( V DS T C D t p<br>P tot I D<br>**----- End of picture text -----**<br>


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10 [2] 10 [1]<br>SS = ae Sa<br>== FHHAC<br>Pht 1 µs HeR CHC<br>10 [1] HI aSELE 10 µs  St1+ AOCconiCerne CCTCc<br>S t 100 µs S l NA 0.5<br>$3 FFB PSS HH aA ca<br>SR 1 ms aa | |||<br>10 [0] ZZNTE SNONESSRNR 10 ms 10 [0] 0.2 LABAT||<br>SS SSS S S E ISSERS ae enterLY ae?” aaen tll emcee meal<br>SSS\ oo 0.1 Sete— MFA tnt PE eH<br>eNO 10 [-1] DC NNO Se 0.05 eC<br>2 NN KN fe eae<br>0.02<br>10 [-2] et| TT— NENT 10 [-1] ay925400<br>0.01<br>a ee EH PODRE<br>SSS aiieet<br>SSS SN |<br>single pulse<br>10 [-3]<br>INIT ctu CCU CME EETTC<br>=e LAINIE UIE TINT TUTTE ETE CATT<br>en<br>10 [-4] PT TTT ET [EET] ET 10 [-2]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>V DS Iv] t p [s]<br>I D=f( V DS T C D t p Z thJC t P D=t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


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30 20<br>TITTLE EEEEeLeeee 20 V a 20 V<br>10 V<br>HEE EEE g r Tey EEL PR ARB<br>ee a FPPCPT TT TT eTeee,yt ty 10 V Z<br>25 COC ae ee 5 8 V<br>a Bam LK<br>PF}Seettt. te fb. pase 8 V Ef 15 PEtSOE tT TT TT TT Yt TT ee s T T<br> eeeeee, 7a COO e e<br>2 ZZ<br>20 7 O h<br>a /2 seeeeeeeeny 7 V Aqeneeee<br>a /72 Wa<br>SS S Bmp<br>7 V<br>e< 15 esbeeper7fo e cee le 10 FD fY o<br>Se) eee ee ee e<br>eyey // // Sennen’4/AAGGnGnennee 6 V n<br>5.5 V<br>6 V<br>10 ee FLi tt mt tt t t<br>fo f f<br>5.5 V 5 5 V<br>So) Z e e S e e ee a a g ea a e CEE Ee e , CE<br>5<br>A 5 V A 4.5 V<br>f e S) 40S8 2<br>oe 4.5 V PA GERE<br>0 YVi titi t itti;ti t ititt 0 AREEREEE<br>0 5 10 15 20 0 5 10 15 20<br>V DS V DS<br>[Vv] [Vv]<br>I D=f( V DS ); T j =25 °C; parameter: V GS I D=f( V DS ); T j =125 °C; parameter: V GS<br>I D I D<br>**----- End of picture text -----**<br>


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1.50<br>1.40 SS oe ee ee eSoe 1.05 2 —————<br>1.30 SS SeSeeea CL | | | | | | |_|<br>=== 5V  A 5.5 V 6.5 V oe 7 V 10 V SO<br>1.20 Peppep 6 V SF pf rj | | | | | | /<br>SSeSSS == SSS SS SS Lr | | | |_| | _ - fY]<br>1.10 SSSSS SSeeSSS SSSeeSSS SSSee 0.85 esOfsy<br>a oe Ae 2 es es es es A<br>1.00 SEE SE a<br>SS |.<br>0.90 SSE OC YY<br>_ SES aeSee EEE 0.65 —OCCOSC MC<br>0.80 <6 ee A<br>EZ es<br>0.70 a es<br>a 0.45 A<br>98%<br>0.60<br>-ERERR ERE EE EE EF I ES ES EE EH 4 KH,Ld Aaert| _+_t<br>typ<br>0.50 eee=SS  ee eV 0.25 aTEeaeL|| | 1<br>0.40 SS ae ee ee<br>a el<br>0.300.20 S255525=2222=2=22=2=2==SS i 0.05 Rs——————rf, | |_|ff<br>0 5 10 15 20 25 -40 -15 10 35 60 85 110 135 160<br>I D [A] T j [°C]<br>R DS(on)=f( I D ); T j =125 °C; parameter: V GS R DS(on)=f( T j ); I D =3.8A; V GS =10V<br>] Ω ] Ω<br> [<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


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30 10<br>ee ee ee 25 °C ee rT TL E L_E_ELL_EL_LLLIAALLL<br>9<br>oe eee ee | ee<br>25 a ee ee | ee ee eee<br>8<br>SSS cee<br>a eee ee ee eee 120 V : 480 V<br>7<br>20 SS cee eo Ao<br>| of | of ft tT //<br>6<br>oe ee oe eeoe<br>=> ptt 150 °C /<br>f 15 ee eee > 5 ————$—$ ———<br>EES<br>eeE Se,ee ee ee ee eee = Ce<br>4<br>eee<br>10 a aeeee oeee<br>3<br>ee<br>a oe ee<br>ee ee ee ee eee l<br>2<br>5 SE EERE<br>ae ee / ee ee ee eee<br>1<br>ee oe<br>| | | Ys | |<br>0 4 0 PLT ETT TT ETT PE ET<br>0 2 4 6 8 10 12 0 10 20 30 40<br>V GS [V] Q gate [nC]<br>I D=f( V GS V DS T j V GS=f( Q gate I D V DD<br>I D V GS<br>**----- End of picture text -----**<br>


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10 [2] 250<br>ae a<br>25 °C<br>125 °C<br>1. L PO _potFEESft ftCeeft pt EEL EL aa a ee<br>FTP Pe eeeeee rE a<br>200<br>FLT “a a<br> TT Et TT iA ET es<br>10 [1]<br>n n eee<br>a ne A<br>a 150<br>STa ee ee eee ee<br>100<br>Soot || Sx<br>eT SE<br>10 [0] oN<br>————— | Ee<br>=== —— = a<br>pt ft ft ft tp epee tp pt<br>i eee 50 a es<br>Se eee oN<br>eee<br>—<br>| a ee<br>10 [-1] 0<br>0.0 0.5 1.0 1.5 2.0 25 50 75 100 125 150<br>V SD [V] T j [°C]<br>I F=f( V SD T j E AS=f( T j I D V DD<br>I F AS<br>E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
700 10 [4]<br>ee 1========__-_____————| [| | {| [| [| [ — — 7T [ JT TT [TT 7 [ 7 TT JT]<br>680660 er FERRE EEE EEE EEE<br>10 [3] Ciss<br>Po 4 NSE<br>640<br>po fp ASS<br>_ 620 en ee HIV | | Pe te te tT TP | PT tT TT<br>eS Ca fe 10 [2] WN<br>600 Coss<br>tat ttt a== [S=BES=SSsea==seee] a A GQ GG |<br>580<br>i,<br>7 CAS<br>10 [1]<br>560<br>Zo oe<br>Crss<br>540 Pf es | ee ee<br>es es| eeftesff ff] FSPerr TreSrrr<br>520 es 10 [0] PTL LL EEE ELLE LEER LLL<br>-40 -15 10 35 60 85 110 135 160 0 100 200 300 400 500<br>T j [°C] V DS [V]<br>V BR(DSS)=f( T j I D C =f( V DS V GS f<br>C<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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4 fF | | | | | | | {| {| |<br>fF | [ | | [| [| | | [ g<br>fF | [ | | [| [| | | [7<br>| | {[ | | [| [| | | Y |<br>3 FtFt || || ltlfl ltl ltl lt TT ld] UY]TY<br>Ft | | ltl lm rT TY |<br>fF | [ | | [| [| Yi [ |<br>= PF | [| | | [| [A | [ |<br>Es 2 fFfF || [|| || || vty[| VYltl]| [||<br>Ft | | | UK | Tl] |<br>PF | | | Yi | | | |<br>P| | [| JAE | [| | | [|<br>1 |fT |[A[Toe| | || |[| || |tlltl ll<br>| xy | | | | | | | | |<br>| /7| | | | | | | | | |<br>i7 i | | | | | | |<br>0 Yi {| | | | [| | | [|<br>0 100 200 300 400 500<br>V DS [V]<br>[SOS E oss = f (V DS )<br>oss<br>E<br>**----- End of picture text -----**<br>


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## **5�����Test�Circuits** 

## **Table�8�����Diode�characteristics** 

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**----- Start of picture text -----**<br>
Test circuit for diode characteristics Diode recovery waveform<br>V ,I<br>R g 1 VDS(peak) VDS<br>VDS<br>V DS IF tF trr tS<br>R g  2 dIF / dt<br>I F t<br>QF QS 10 %Irrm<br>R g 1 = RI F g  2 Irrm dIrr / dt tQrrrr =t= QF +tF S+QS<br>Table�9�����Switching�times<br>Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>V DS<br>V GS 10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>**----- End of picture text -----**<br>


## **Table�9�����Switching�times** 

## **Table�10�����Unclamped�inductive�load** 

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**----- Start of picture text -----**<br>
Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

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2016-03-31 

**600V�CoolMOSª�CE�Power�Transistor IPAW60R380CE** 

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## **6�����Package�Outlines** 

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**----- Start of picture text -----**<br>
E A<br>A1<br>P<br>b3<br>b5 b2<br>A2<br>b<br>0.381 B A<br>c<br>e<br>Q<br>D<br>D1<br>H<br>L1<br>L<br>**----- End of picture text -----**<br>


**==> picture [308 x 156] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS DOCUMENT NO.<br>MILLIMETERS INCHES Z8B00176938<br>DIM<br>MIN MAX MIN MAX<br>A 4.50 4.90 0.177 0.193 SCALE 0<br>A1 2.34 2.74 0.092 0.108<br>A2 2.65 2.95 0.104 0.116<br>2<br>b 0.75 0.90 0.030 0.035<br>b2 0.98 1.26 0.039 0.050 0 2<br>b3 1.00 1.40 0.039 0.055 4 mm<br>b5 3.00 - 0.118 -<br>c 0.40 0.60 0.016 0.024 EUROPEAN PROJECTION<br>D 15.47 16.27 0.609 0.641<br>D1 9.17 0.361<br>E 10.70 11.30 0.421 0.445<br>e 4.25 (BSC) 0.167 (BSC)<br>N 3 3<br>H 28.25 29.45 1.112 1.159 ISSUE DATE<br>L 12.58 13.38 0.495 0.527 28-04-2015<br>L1 1.70 2.30 0.067 0.091<br>�� 3.00 3.30 0.118 0.130 REVISION<br>Q 3.10 3.50 0.122 0.138 01<br>**----- End of picture text -----**<br>


## **Figure�1�����Outline�PG�-�TO220�FullPAK�WideCreepage,�dimensions�in�mm/inches** 

Final Data Sheet 

12 

2016-03-31 

600V CoolIMOS™ CE Power Transistor 

**IPAW60R380CE** 

> • IFX CoolIMOS **TM** • IFX CoolIMOS_ **TM TM** 

- 

- 

Final Data Sheet 

13 

2016-03-31 

**IPAW60R380CE** 

## IPAW60R380CE 

|Previous Revision|Previous Revision|
|---|---|
|Date|Subjects (major changes since last revision)|
|2015-10-07|Release of final version|
|2016-03-31|Modified Id Ratings|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

14 

2016-03-31 



## Links

- [View this product on Novapart](https://novapart.co/products/IPAW60R380CEXKSA1/power-mosfet-n-channel-600-v-15-a-034-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipaw60r380cexksa1/mosfet-n-ch-600v-15a-to-220fp/dp/2617443)
---

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