# Power MOSFET, N Channel, 600 V, 8.1 A, 0.47 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2212895/)

**URL**: https://novapart.co/products/IPA60R520E6XKSA1/power-mosfet-n-channel-600-v-81-a-047-ohm-to-220fp
**SKU**: IPA60R520E6XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3330
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 29W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 29W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.47ohm |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8.1A |
| Drain Source On State Resistance | 0.47ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2212895/)

## MOSFET 

IPx60R520E6 

Final 

**IPP60R520E6, IPA60R520E6** 

## **600V CoolMOS** " **E6 Power Transistor** 

## **1 Description** 

CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. 

## **Features** 

- Extremely low losses due to very low FOM Rdson*Qg and Eoss 

- Very high commutation ruggedness 

- Easy to use/drive 

- JEDEC[1)] qualified, Pb-free plating, halogen free 

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drain<br>pin 2<br>gate<br>pin 1<br>source<br>pin 3<br>**----- End of picture text -----**<br>


## **Applications** 

PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. 

Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. 

**Table 1 Key Performance Parameters** 

|**Parameter**|**Value**|**Unit**|
|---|---|---|
|_V_DS @_T_j,max|650|V|
|_R_DS(on),max|0.52|!|
|_Q_g,typ|23.4|nC|
|_I_D,pulse|22|A|
|_E_oss @ 400V|2.1|µJ|
|Body diode d_i_/d_t_|500|A/µs|



|**Type / Ordering Code**|**Package**|**Marking**|**Related Links**|
|---|---|---|---|
|IPA60R520E6|PG-TO220 FullPAK|6R520E6|IFX CoolMOS Webpage<br>IFX Design tools|
|IPP60R520E6|PG-TO220|||



1) J-STD20 and JESD22 

Final Data Sheet 

**Rev. 2.** 02 **, 201** 04 **-** 0412 **-** 0910 

2 

**600V CoolMOS** " **E6 Power Transistor IPx60R520E6** 

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## **Table of Contents** 

## **Table of Contents** 

|**1**|**Description** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|---|---|
||**Table of Contents** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**2**|**Maximum ratings**<br>. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4|
|**3**|**Thermal characteristics** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**4**|**Electrical characteristics** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**5**|**Electrical characteristics diagrams**<br>. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
|**6**|**Test circuits** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|**7**|**Package outlines**<br>. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
|**8**|**Revision History** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16|



Final Data Sheet 

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3 

**600V CoolMOS** " **E6 Power Transistor IPx60R520E6** 

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## **Maximum ratings** 

## **2 Maximum ratings** 

at _T_ j = 25 °C, unless otherwise specified. 

## **Table 2 Maximum ratings** 

|**Table 2**<br>**Maximum ratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-|-|8.1|A|_T_C= 25 °C|
|||||5.1||_T_C= 100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|22|A|_T_C=25 °C|
|Avalanche energy, single pulse|_E_AS|-|-|153|mJ|_I_D=1.4 A,_V_DD=50 V<br>(see table 21)|
|Avalanche energy, repetitive|_E_AR|-|-|0.23||_I_D=1.3 A,_V_DD=50 V|
|Avalanche current, repetitive|_I_AR|-|-|1.4|A||
|MOSFET dv/dt ruggedness|dv/dt|-|-|50|V/ns|_V_DS=0...480 V|
|Gate source voltage|_V_GS|-20|-|20|V|static|
|||-30||30||AC (f>1 Hz)|
|Power dissipation for<br>TO-220|_P_tot|-|-|66|W|_T_C=25 °C|
|Power dissipation for<br>TO-220 FullPAK|_P_tot|-|-|29|W|_T_C=25 °C|
|Operatingand storage temperature|_T_j,_T_stg|-55|-|150|°C||
|Mounting torque<br>TO-220||-|-|60|Ncm|M3 and M3.5 screws|
|Mounting torque<br>TO-220 FullPAK||||50||M2.5 screws|
|Continuous diode forward current|_I_S|-|-|7|A|_T_C=25 °C|
|Diode pulse current2)|_I_S,pulse|-|-|22|A|_T_C=25 °C|
|Reverse diode dv/dt3)|dv/dt|-|-|15|V/ns|_V_DS=0...400 V,_I_SD"_I_D,<br>_T_j=25 °C<br>(see table 22)|
|Maximum diode commutation<br>speed3)|dif/dt|||500|A/µs||



1) Limited by _T_ j,max. Maximum duty cycle D=0.75 

2) Pulse width _t_ p limited by _T_ j,max 

- 3) Identical low side and high side switch with identical _R_ G 

Final Data Sheet 

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**600V CoolMOS** " **E6 Power Transistor IPx60R520E6** 

**Thermal characteristics** 

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## **3 Thermal characteristics** 

## **Table 3 Thermal characteristics TO-220 (IPP60R520E6)** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case|_R_thJC|-|-|1.9|°C/W||
|Thermal resistance, junction -<br>ambient|_R_thJA|-|-|62||leaded|
|Soldering temperature,<br>wavesoldering only allowed at<br>leads|_T_sold|-|-|260|°C|1.6 mm (0.063 in.)<br>from case for 10 s|



## **Table 4 Thermal characteristics TO-220FullPAK (IPA60R520E6)** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case|_R_thJC|-|-|4.3|°C/W||
|Thermal resistance, junction -<br>ambient|_R_thJA|-|-|80||leaded|
|Soldering temperature,<br>wavesoldering only allowed at<br>leads|_T_sold|-|-|260|°C|1.6 mm (0.063 in.)<br>from case for 10 s|



Final Data Sheet 

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**600V CoolMOS** " **E6 Power Transistor IPx60R520E6** 

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## **Electrical characteristics** 

## **4 Electrical characteristics** 

Electrical characteristics, at _T_ j=25 °C, unless otherwise specified. 

|**Table 5**<br>**Static characteristics**|**Table 5**<br>**Static characteristics**|**Table 5**<br>**Static characteristics**|**Table 5**<br>**Static characteristics**|**Table 5**<br>**Static characteristics**|**Table 5**<br>**Static characteristics**|**Table 5**<br>**Static characteristics**|
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|600|-|-|V|_V_GS=0 V,_I_D=0.25 mA|
|Gate threshold voltage|_V_GS(th)|2.5|3|3.5||_V_DS=_V_GS,_I_D=0.23mA|
|Zero gate voltage drain current|_I_DSS|-|-|1|µA|_V_DS=600 V,_V_GS=0 V,<br>_T_j=25 °C|
|||-|10|-||_V_DS=600 V,_V_GS=0 V,<br>_T_j=150 °C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20 V,_V_DS=0 V|
|Drain-source on-state resistance|_R_DS(on)|-|0.47|0.52|!|_V_GS=10 V,_I_D=2.8 A,<br>_T_j=25 °C|
|||-|1.22|-||_V_GS=10 V,_I_D=2.8A,<br>_T_j=150 °C|
|Gate resistance|_R_G|-|9|-|!|_f_=1 MHz, open drain|



## **Table 6 Dynamic characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|512|-|pF|_V_GS=0 V,_V_DS=100 V,<br>_f_=1 MHz|
|Output capacitance|_C_oss|-|35|-|||
|Effective output capacitance,<br>energy related1)|_C_o(er)|-|23|-||_V_GS=0 V,<br>_V_DS=0...480 V|
|Effective output capacitance, time<br>related2)|_C_o(tr)|-|100|-||_I_D=constant,_V_GS=0 V<br>_V_DS=0...480V|
|Turn-on delay time|_t_d(on)|-|12|-|ns|_V_DD=400 V,<br>_V_GS=13 V,_I_D=3.5 A,<br>_R_G= 6.8!<br>(see table 20)|
|Rise time|_t_r|-|10|-|||
|Turn-off delay time|_t_d(off)|-|75|-|||
|Fall time|_t_f|-|9|-|||



1) _C_ o(er) is a fixed capacitance that gives the same stored energy as _C_ oss while VDS is rising from 0 to 80% V(BR)DSS 

- 2) _C_ o(tr) is a fixed capacitance that gives the same charging time as _C_ oss while VDS is rising from 0 to 80% V(BR)DSS 

Final Data Sheet 

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**600V CoolMOS** " **E6 Power Transistor IPx60R520E6** 

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## **Electrical characteristics** 

## **Table 7 Gate charge characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|2.8|-|nC|_V_DD=480 V,_I_D=3.5A,<br>_V_GS=0 to 10 V|
|Gate to drain charge|_Q_gd|-|12|-|||
|Gate charge total|_Q_g|-|23.4|-|||
|Gateplateau voltage|_V_plateau|-|5.4|-|V||



## **Table 8 Reverse diode characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0 V,_I_F=3.5A,<br>_T_j=25 °C|
|Reverse recoverytime|_t_rr|-|260|-|ns|_V_R=400 V,_I_F=3.5A,<br>d_i_F/d_t_=100 A/µs<br>(see table 22)|
|Reverse recoverycharge|_Q_rr|-|2.5|-|µC||
|Peak reverse recovery current|_I_rrm|-|18|-|A||



Final Data Sheet 

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**600V CoolMOS** " **E6 Power Transistor IPx60R520E6** 

**5 Electrical characteristics diagrams** 

## **Electrical characteristics diagrams** 

## **Table 9** 

**Power dissipation TO-220** 

_P_ tot = f( _T_ C) 

**Power dissipation TO-220 FullPAK** 

_P_ tot = f( _T_ C) 

## **Table 10** 

**Max. transient thermal impedance TO-220** 

_Z_ (thJC)=f(tp); parameter: D=tp/T 

**Max. transient thermal impedance TO-220 FullPAK** 

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Z (thJC)=f(tp); parameter: D=tp/T<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**600V CoolMOS** " **E6 Power Transistor IPx60R520E6** 

## **Electrical characteristics diagrams** 

## **Table 11** 

## **Safe operating area** _**T**_ **C=25 °C TO-220** 

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I D=f(VDS);  T C=25 °C; D=0; parameter t p<br>**----- End of picture text -----**<br>


**Safe operating area** _**T**_ **C=25 °C TO-220 FullPAK** 

_I_ D=f(VDS); _T_ C=25 °C; D=0; parameter _t_ p 

**Table 12** 

**Safe operating area** _**T**_ **C=80 °C TO-220** 

_I_ D=f(VDS); _T_ C=80 °C; D=0; parameter _t_ p 

**Safe operating area** _**T**_ **C=80 °C TO-220 FullPAK** 

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**----- Start of picture text -----**<br>
I D=f(VDS);  T C=80 °C; D=0; parameter t p<br>**----- End of picture text -----**<br>


Final Data Sheet 

**Rev. 2.** 02 **, 201** 04 **-** 0412 **-** 0910 

9 

**600V CoolMOS** " **E6 Power Transistor IPx60R520E6** 

**Electrical characteristics diagrams** 

## **Table 13** 

## ~~ts~~ **Typ. output characteristics** _**T**_ **C=25 °C Typ. output characteristics** _**T**_ **j=125 °C** 

~~a~~ _I_ D=f( _V_ DS); _T_ j=25 °C; parameter: _V_ GS _I_ D=f( _V_ DS); _T_ j=125 °C; parameter: _V_ GS 

**Table 14** 

- **Typ. drain-source on-state resistance Drain-source on-state resistance** 

- ~~a~~ 

~~rs~~ _R_ DS(on)=f( _I_ D); _T_ j=125 °C; parameter: _V_ GS _R_ **DS(on)** =f( _T_ **j** ); _I_ **D** =2.8 A; _V_ **GS** =10 V 

Final Data Sheet 

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10 

**600V CoolMOS** " **E6 Power Transistor IPx60R520E6** 

## **Electrical characteristics diagrams** 

## **Table 15** 

**Typ. transfer characteristics Typ. gate charge** 

_I_ D=f( _V_ GS); _V_ DS=20V 

_V_ GS=f( _Q_ gate), _I_ D=3.5 A pulsed 

## **Table 16** 

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Avalanche energy Drain-source breakdown voltage<br>i<br>120 | \ - .n +t<br>APE /<br>wi 60 — a 600 |— |,<br>580 }——7<br>4 . |<br>0. ao 540 :<br>20 60 100 140 180 -60 -20 20 60<br>T, [°C] T, [°C]<br>E AS =f( T j );  I D =1.4 A;  V DD =50 V V BR(DSS)=f( T j);  I D=0.25 mA<br>**----- End of picture text -----**<br>


Final Data Sheet 

**Rev. 2.** 02 **, 201** 04 **-** 0412 **-** 0910 

11 

**600V CoolMOS** " **E6 Power Transistor IPx60R520E6** 

## **Electrical characteristics diagrams** 

## **Table 17** 

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**----- Start of picture text -----**<br>
Typ. capacitances Typ. C oss stored energy<br>10° : === 4<br>3<br>103 | _ | | |<br>ria \ Ciss> ; z<br>Ss = 2<br>o 8<br>10° — “<br>Coss -}<br>1<br>0 1000 «2000-300 4000 500 G00 0 100 200<br>Vos [V]<br>C=f( V DS);  V GS=0 V;  f =1 MHz E OSS =f( V DS)<br>**----- End of picture text -----**<br>


## **Table 18** 

## **Forward characteristics of reverse diode** 

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**----- Start of picture text -----**<br>
I F=f( V SD); parameter: T j<br>**----- End of picture text -----**<br>


Final Data Sheet 

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12 

**600V CoolMOS** " **E6 Power Transistor IPx60R520E6** 

**Test circuits** 

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## **6 Test circuits** 

**Table 19 Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching time waveform** 

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V DS<br>90%<br>V DS<br>V GS<br>10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>**----- End of picture text -----**<br>


**Table 20 Unclamped inductive load test circuit and waveform** 

**Unclamped inductive load test circuit** 

**Unclamped inductive waveform** 

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I D V DS<br>**----- End of picture text -----**<br>


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V (BR)DS<br>V D<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


**Table 21 Test circuit and waveform for diode characteristics** 

**Test circuit for diode characteristics Diode recovery waveform** 

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**----- Start of picture text -----**<br>
I D #<br>/#) #/$<br>R G1 [$] !0000(($ .!" .$")  ! )<br>$00<br>V DS ) $. $ )<br>R G2 !. !) %$! --, $<br>--, /#00 #/$ "--,<br>'$! --,<br>R G1 =  R G2<br>.*+$$$&&<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**600V CoolMOS** " **E6 Power Transistor IPx60R520E6** 

**7 Package outlines** 

## **Package outlines** 

**Figure 1 Outlines TO-220, dimensions in mm/inches** 

Final Data Sheet 

**Rev. 2.** 02 **, 201** 04 **-** 0412 **-** 0910 

14 

6**M =^^[FGKm #6 H^fTa LaP]bXbc^a IP(%!'"!!#% 

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Final Data Sheet 

**Rev. 2.** 25 **, 2014-12-** 1009 

600V CoolMOS™ E6 Power IPx60R520E6 Transistor 

IPx60R520E6 

## IPx60R520E6 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2011-06-08|Release final data sheet|
|2.1|2011-09-14|-|
|2.2|2015-02-09|PG-TO220 FullPAK package outline update (creation:2014-12-10)|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

16 



## Links

- [View this product on Novapart](https://novapart.co/products/IPA60R520E6XKSA1/power-mosfet-n-channel-600-v-81-a-047-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/ipa60r520e6xksa1/mosfet-n-ch-600v-8-1a-to220/dp/2212895)
---

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