# Power MOSFET, N Channel, 600 V, 21 A, 0.15 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2726036/)

**URL**: https://novapart.co/products/IPA60R165CPXKSA1/power-mosfet-n-channel-600-v-21-a-015-ohm-to-220
**SKU**: IPA60R165CPXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.5900
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 34W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 21A |
| Drain Source On State Resistance | 0.15ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726036/)

**IPA60R165CP** 

## **CoolMOS[®] Power Transistor Features** 

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**CoolMOS CP is designed for:** 

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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Type**|||||**Package**|||||**Ordering Code**||||**Marking**||||gate<br>pin 1||
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|||||||||||||||||||ping||
|**Maximum ratings,**||at|||[|=25||°C,|unless otherwise specified|||||||||||
|**Parameter**||||||||||**Symbol **|**Conditions**||||||**Value**||**Unit**|
||||||||#|||_I_=|_T_<||||||+*||9|
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**IPA60R165CP** 

|**IPA60R165CP**<br>Cinfi|**IPA60R165CP**<br>Cinfi|**IPA60R165CP**<br>Cinfi|**IPA60R165CP**<br>Cinfi|**IPA60R165CP**<br>Cinfi|**IPA60R165CP**<br>Cinfi|**IPA60R165CP**<br>Cinfi|
|---|---|---|---|---|---|---|
|**Maximum ratings,**<br>[<br>at<br>=25 °C, unless otherwise specified|||||||
|**Parameter**<br>~~Continuousdiodeforwardcurrent~~<br>~~|~~|**Symbol **<br>~~||~~|**Conditions**<br>~~Po~~|**Value**<br>~~Po~~|||**Unit**|
|#<br>~~Continuousdiodeforwardcurrent~~<br>~~|~~|_I_L<br>~~||~~|_T_<<br>~~Po~~<br>=25 °C|+*<br>~~Po~~|||9|
|,#<br>~~Continuous diode forward current~~<br>~~|~~|_I_L%af]dV<br>~~| |~~||/*<br>~~Po~~||||
|(U_t_ .#|U_v_(U_t_||*.|||O(_d|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Thermal characteristics**|||||||
|1=: GB|_R_eYC<||&||,'/.|D(P|
|1=: GB<br>R^SZV_e|_R_eYC9|]VRUVU|&|&|1)||
|Soldering te<br>perature,<br>wavesoldering only allowed at leads|_T_d]U|B<br>;GDB<br>1.6<br>(0.063 in.)<br>case for 10s|&|&|+/)|u<|
|**Electrical characteristics,**<br>[<br>at<br>=25 °C, unless otherwise specified|||||||
|**Static characteristics**<br>~~Drain-sourcebreakdownvoltage~~<br>~~P|~~<br>~~=0~~<br>~~,~~<br>~~=250APf~~|||||||
|~~Drain-sourcebreakdownvoltage~~|_V_";K#=LL <br>~~P|~~|_V_@L<br>_I_=<br>~~P|~~<br>~~=0~~<br>~~,~~<br>~~=250A~~|/))<br>~~Pf~~|&<br>~~Pf~~|&|O|
|$ ~~Drain-source breakdown voltage~~|_V_@L"eY#<br>~~P|~~|_V_=L6_V_@L _I_=<br>~~P|~~<br>~~=0~~<br>~~,~~<br>~~=250 A ~~|+'.<br> ~~Pf~~|,<br>~~Pf~~|,'.||
|Zero<br>gate voltage drai<br>t<br>ero gate voltage<br>drain curren<br>~~ate-sourceleakagecurrent~~<br>~~|~~|_I_=LL<br>~~||~~|_V_=L<br>_V_@L<br>_T_[<br>“600<br>0<br>-95 °C|&|&|*|w9|
|||_V_=L<br>_V_@L<br>_T_[<br>=25<br>,<br>=0<br>,<br>=150 °C<br>~~=20~~<br>~~,~~<br>~~=0V~~|&<br>~~Pf]~~|*)<br>~~Pf]~~|&<br>~~Pf]~~||
|$ ~~ate-sourceleakagecurrent~~<br>~~|~~|_I_@LL<br>~~||~~|_V_@L<br>_V_=L<br>~~=20~~<br>~~,~~<br>~~=0V~~|&<br>~~Pf]~~|&<br>~~Pf]~~|*))<br>~~Pf]~~|_9|
|~~ate-source leakage current~~<br>~~|~~<br>Drai<br>tat<br>ist<br>rain-source on-state resistance|_R_=L"_#<br>~~| |~~|_V_@L<br>_I_=<br>_T_[<br>~~=20~~<br>~~,~~<br>~~=0V ~~<br>=10<br>,<br>=12A,<br>=95 °C|&<br> ~~Pf]~~|)'*.<br>~~Pf]~~|)'*/.<br>~~Pf]~~|"|
|||_V_@L<br>_I_=<br>_T_[<br>=10<br>,<br>=12A,<br>=150 °C|&|)'-)|&||
|$|_R_@|_f_||||"|



|**IPA60R165CP**<br>Cinfineon|**IPA60R165CP**<br>Cinfineon|**IPA60R165CP**<br>Cinfineon|**IPA60R165CP**<br>Cinfineon|**IPA60R165CP**<br>Cinfineon|**IPA60R165CP**<br>Cinfineon|**IPA60R165CP**<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics**<br>~~Inputcapacitance~~<br>~~P|~~<br>=0<br>,<br>=100<br>,~~Pf]~~|||||||
|~~Inputcapacitance~~<br>~~Outputcapacitance~~<br>~~|~~|_C_Zdd<br>~~P|~~<br>~~||~~|_V_@L<br>_V_=L<br>_f_<br>O<br>~~P|~~<br>=0<br>,<br>=100<br>,~~Pf]~~<br>~~=1M~~<br>~~Pp~~|&<br>~~Pf]~~<br>~~Pf]~~|+)))<br>~~Pf]~~<br>~~Pf]~~|&<br>~~Pf]~~<br>~~Pf]~~|a?|
|~~Input capacitance~~<br>~~Outputcapacitance~~<br>~~|~~<br>~~ffectiveoutputcapacitance,energypo~~|_C_dd<br>~~P|~~<br>~~||~~<br>~~po~~||&<br>~~Pf]~~<br>~~Pf]~~<br>~~Pp ff~~|*))<br>~~Pf]~~<br>~~Pf]~~<br>~~ff~~|&<br>~~Pf]~~<br>~~Pf]~~<br>~~ff~~||
|"<br>cV]ReVU/#<br>~~Output capacitance~~<br>~~|~~<br>~~ffectiveoutputcapacitance,energypo~~<br>~~ffectiveoutputcapacitance,tieSe~~|_C_"Vc#<br>~~| | ~~<br>~~po~~<br>~~Se to~~|_V_@L<br>_V_=L<br> ~~=1M~~<br>~~Pp~~<br>=0<br>,<br>=0<br>~~to 480'V~~|&<br>~~Pf]~~<br>~~Pp ff~~<br>~~Pf~~|1,<br>~~Pf]~~<br>~~ff~~<br>~~Pffe~~|&<br>~~Pf]~~<br>~~ff~~<br>~~fe~~||
|"<br>cV]ReVU0#<br>~~ffective output capacitance, energy po~~<br>~~ffectiveoutputcapacitance,tieSe~~|_C_"ec#<br>~~po~~<br>~~Se to~~||&<br>~~Pp ff~~<br>~~Pf~~|++)<br>~~ff~~<br>~~Pffe~~|&<br>~~ff~~<br>~~fe~~||
|:<br>~~ffective output capacitance, ti e Se~~|_t_U"_#<br>~~Se to~~|_V_==<br>_V_@L<br>_I_=<br>_R_@<br>"<br>~~to 480'V~~<br>=10<br>,<br>=12A,<br>~~P|~~<br>=3.3|&<br>~~Pf~~|*+<br>~~Pf fe~~|&<br>~~fe~~|_d|
|:<br>~~Turn-offdelayti~~|_t_c<br>~~P|~~||&<br>~~Pf]~~|.<br>~~Pf]~~|&<br>~~Pf]~~||
|:<br>~~Turn-offdelayti~~|_t_U"WW#<br>~~P|~~||&<br>~~Pf]~~|.)<br>~~Pf]~~|&<br>~~Pf]~~||
|:<br>~~Turn-off delay ti~~|_t_W<br>~~P|~~||&<br>~~Pf]~~|.<br>~~Pf]~~|&<br>~~Pf]~~||
|**Gate Charge Characteristics**<br>~~atetosourcecharge~~<br>~~P|~~<br>~~Pf]~~|||||||
|$ ~~atetosourcecharge~~<br>~~atetodraincharge~~<br>~~|~~|_Q_Xd<br>~~P|~~<br>~~||~~|_V_==<br>_I_=<br>_V_@L<br>~~P|~~<br>=400<br>,<br>=12A, <br>~~P|~~<br>=0to 10V|&<br>~~Pf]~~<br>~~Pf]~~|2<br>~~Pf]~~<br>~~Pf]~~|&<br>~~Pf]~~<br>~~Pf]~~|_<|
|$ ~~ate to source charge~~<br>~~atetodraincharge~~<br>~~|~~<br>~~atechargetotal~~|_Q_XU<br>~~P|~~<br>~~||~~<br>~~P|~~||&<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|*,')<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|&<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~||
|$ ~~ate to drain charge~~<br>~~|~~<br>~~atechargetotal~~<br>~~ateplateauvoltage~~<br>~~po~~|_Q_X<br>~~| |~~<br>~~P|~~<br>~~po~~||&<br> ~~Pf]~~<br>~~Pf]~~<br>~~Pf~~|,2<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf~~|.+<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf~~||
|$ ~~ate charge total~~<br>~~ateplateauvoltage~~<br>~~po~~|_V_a]ReVRf<br>~~P|~~<br>~~po~~||&<br>~~Pf]~~<br>~~Pf~~|.')<br>~~Pf]~~<br>~~Pf~~|&<br>~~Pf]~~<br>~~Pf~~|O|
|**Reverse Diode**<br>~~ate plateau voltage~~<br>~~po~~<br>~~Pf~~|||||||
||_V_L=|_V_@L<br>_I_?<br>_T_[<br>=25<br>°C|&|)'2|*'+|O|
|:<br>Reverserecovery ti<br>~~Reverserecoverycharge~~|_t_cc<br>~~a~~<br>~~P|~~|_V_K<br>_I_?6_I_L<br>U_i_?(U_t_<br>H<br>~~P|~~<br>=400<br>, <br>=100 A/<br>~~P|~~|&<br>~~Pf~~<br>~~Pf]~~|,2)<br>~~Pf~~<br>~~Pf]~~|&<br>~~Pf~~<br>~~Pf]~~|_d|
|~~Reverserecoverycharge~~<br>~~Peakreverserecoverycurrent~~|_Q_cc<br>~~P|~~<br>~~P|~~||&<br>~~Pf]~~<br>~~Pf]~~|0'.<br>~~Pf]~~<br>~~Pf]~~|&<br>~~Pf]~~<br>~~Pf]~~|w<|
|~~Reverse recovery charge~~<br>~~Peakreverserecoverycurrent~~|_I_cc^<br>~~P|~~<br>~~P|~~||&<br> ~~Pf]~~<br>~~Pf]~~|,1<br>~~Pf]~~<br>~~Pf]~~|&<br>~~Pf]~~<br>~~Pf]~~|9|
|*#<br>~~Peak reverse recovery current~~<br>~~P|~~<br>~~Pf]~~<br>J-STD20 and J.<br>SD22|||||||
|+#<br>a<br>[%^Ri<br>,#<br>6M>B JB<br>E: G6IJG:<br>-#<br>.#<br>="B=<br>=<]Z_\<br>aVR\5O<br>Pulse width<br>li<br>ited by<br>Li<br>ited only by<br>te<br>Repetitive avalanche causes additional power<br>I<br>, di/dt 200A/ s,<br>=400<br>,|9O6_E_ 9K$_f._<br>5O";K#=LL<br>[5M[^Ri<br>power losses that can be calculated as<br>iT<br>, identical low side and high side switch.||||||
|<"Vc#<br>=LL'<br>0#_C_"ec#<br>dd<br>_V_=L<br>=LL'<br>)<br>is a fixed capacitance that gives the sa<br>e stored energy as C,,,while<br>pgis rising fro<br>0 to 80%<br>is a fixed capacitance that gives the sa<br>echarging ti eas<br>while<br>is rising fro<br>0 to 80%|||||||



> *# J-STD20 and J. SD22 

> +# Pulse width a li ited by [%^Ri 

> ,# Li ited only by 6M>B JB te E: G6IJG: -# Repetitive avalanche causes additional power losses that can be calculated as 9O[6] _[E]_ 9K[$] _[f.]_ .# I =["][B] = , di/dt 200A/ s, =<]Z_\ =400 , aVR\[5O] ";K#=LL iT [[5M] [^Ri , identical low side and high side ) <`"Vc# is a fixed capacitance that gives the sa e stored energy as C,,,while pgis rising fro 0# _C_ `"ec# is a fixed capacitance that gives the sa echarging ti eas `dd while _V_ =L is rising 

=LL['] `dd while _V_ =L is rising fro 0 to 80% =LL' 

## **IPA60R165CP** 

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1 Power dissipation<br>**----- End of picture text -----**<br>


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2 Safe operating area<br>**----- End of picture text -----**<br>


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I  =6W" V  =L ); T  < 25 °C; D  6)<br>E6G6B eter: t  a<br>**----- End of picture text -----**<br>


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40 10 [2]<br>A>B ited by on-state<br>cVdZdeR_TV 1 H<br>10 H<br>30 H<br>10 [1]<br>H<br>20<br>H<br>10 [0]<br>=<<br>10<br>0 10 [-1]<br>0 40 80 120 160 10 [0] 10 [1] 10 [2] 10 [3]<br>T  C [°C] V  DS [V]<br>3 Max. transient thermal impedance 4 Typ. output characteristics<br>QeYC<6W"ea# I  =6W" V  =L ); T  [ =25 °C<br>E6G6B eter: D=t  a( T E6G6B eter: V  @L<br>10 [1] 80<br>20V<br>12V<br>*)O<br>60<br>)'.<br>10 [0]<br>mu =f 4 yA<br>)'+<br>)'* 40<br>a<br>)').<br>10 [-1] )')+<br>5.5V<br>20<br>)')*<br>5V<br>single pulse 45V<br>10 [-2] 0<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 0 5 10 15 20 25<br>t  p [s] V  DS [V]<br> [W]  [A]<br>P  tot I  D<br> [K/W]  [A]<br>I  D<br> thJC<br>Z<br>**----- End of picture text -----**<br>


## **IPA60R165CP** 

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5 Typ. output characteristics<br>**----- End of picture text -----**<br>


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I  =6W" V  =L ); T  [ =150°C<br>E6G6B eter: V  @L<br>40<br>20V<br>Py” a<br>A —<br>BVA<br>30<br>6V<br>55 V a<br>20 VY,<br>VV —=—x|<br>10 45 V—/<br>0<br>0 5 10 15 20 25<br>V  DS [V]<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **7 Drain-source on-state resistance** 

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0.5<br>0.4<br>0.3<br>21!<br>0.2<br>eja<br>0.1<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br>]<br>[<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


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6 Typ. drain-source on-state resistance<br>**----- End of picture text -----**<br>


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R  =L"`_#6W" I  = ); T  [ =150°C<br>E6G6B eter: V  @L<br>1.2<br>65V |<br>1 /<br>5.5V 7Vq<br>0.8 6V 10V<br>5V<br>C 4y<br>0.6<br>0.4<br>0.2<br>0<br>0 10 20 30 40 50<br>I  D [A]<br>]<br> [<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


## **8 Typ. transfer characteristics** 

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100<br>80<br>60<br>40<br>20<br>0<br>0 2 4 6 8 10<br>V  GS [V]<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **IPA60R165CP** 

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9 Typ. gate charge<br>**----- End of picture text -----**<br>


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## **10 Forward characteristics of reverse diode** 

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E6G6B eter: V  == E6G6B eter: T  [<br>10 10 [2]<br>25 °C, 98%<br>8<br>150 °C, 98%<br>25 °C<br>150 °C<br>10 [1]<br>6<br>4<br>10 [0]<br>2<br>0 10 [-1]<br>0 10 20 30 40 0 0.5 1 1.5 2<br>Q  gate [nC] V  SD [V]<br> [V]  [A]<br>V  GS I  F<br>**----- End of picture text -----**<br>


**11 Avalanche energy** 

_E_ 9L6W" _T_ [ ); _I_ = =7.9A; _V_ == 

**12 Drain-source breakdown voltage** 

_V_ ;K"=LL#6W" _T_ [ ); _I_ = 

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600 700<br>660<br>400<br>620<br>200<br>580<br>0 540<br>20 60 100 140 180 -60 -20 20 60 100 140 180<br>T  j [°C] T  j [°C]<br> [V]<br> [mJ]<br> AS<br>E  BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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IPA60R165CP<br>13 Typ. capacitances 14 Typ. Coss stored energy<br> 6W" V  =L V  @L f O E  `dd =  W (V  =L )<br>10 [5] 14<br>12 TO<br>10 [4]<br>10 corey<br><Zdd<br>10 [3]<br>8<br><`dd 6<br>10 [2]<br>fy Coo<br>4<br>‘ pr<br>10 [1]<br>2<br><cdd<br>eee EEVaEE<br>pceoooo Deo<br>10 [0] 0<br>0 100 200 300 o 400 500 e 0 100 200 300 400 500 600<br>V  DS [V] V  DS [V]<br>[pF]  [µJ]<br>C  oss<br>E<br>**----- End of picture text -----**<br>


**13 Typ. capacitances** _C_ 6W" _V_ =L _V_ @L _f_ O 

**IPA60R165CP** 

## **Definition of diode switching characteristics** 

**IPA60R165CP** 

**PG-TO220-3-31/TO220-3-11: Outline/Fully isolated package (2500VAC; 1 minute)** 

## **IPA60R165CP** 

## **Published by** 

**Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

> The Legal information Disclaimer given in this document shall in no event be regarded as a guarantee of 

> conditions The information or characteristics. given With in this respect document to any examples shall in or no hints event given be herein, regarded any typical as a guarantee of conditions or 

> values characteristics. stated herein With and/or respect any information to any regarding examples the application or hints of given the device, herein, any typical values stated herein 

> Infineon and/or Technologies any information hereby regarding disclaims any the and application all warranties of and the liabilities device, of any Infineon kind, Technologies hereby disclaims 

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> contact nearest the Infineon nearest Infineon Technologies Technologies Office Office (www. infineon.com). 

## "hhh'Z_WZ_V`_'T`^#' 

## Warnings 

## **Warnings** 

Due Due to to technical technical requirements, requirements, components components may contain dangerous may contain substances. dangerous For information substances. For information on on the the types types in in question, question, please contact please the contact nearest Infineon the nearest Technologies Infineon Office. Technologies Office. The Infineon Infineon Technologies Technologies component components described may be used in in this life-support Data Sheet devices may or systems be used only in with life-support devices or systems the and/or express automotive, written approval aviation of Infineon and Technologies, aerospace if a applications failure of such components or systems can only with the express written reasonably approval be of expected Infineon to cause Technologies, the failure of that if a life-support failure of device such or components system or to affect can reasonably be expected to the cause safety the or effectiveness failure of that of that life-support, device or system. automotive, Life support aviation devices or and systems aerospace are device or system or to affect intended the safety to be or implanted effectiveness in the human of that body device or to support or system. and/or maintain Life support and sustain devices or systems are intended to be and/or implanted protect in human the human life. If they body fail, it or is to reasonable support to and/or assume that maintain the health and of the sustain user and/or protect human life. If or they other fail, persons it is reasonable may be endangered. to assume that the health of the user or other persons may be endangered. 



## Links

- [View this product on Novapart](https://novapart.co/products/IPA60R165CPXKSA1/power-mosfet-n-channel-600-v-21-a-015-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipa60r165cpxksa1/mosfet-n-ch-600v-21a-to-220-3/dp/2726036)
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