# Power MOSFET, N Channel, 600 V, 37 A, 0.069 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2986442/)

**URL**: https://novapart.co/products/IPA60R080P7XKSA1/power-mosfet-n-channel-600-v-37-a-0069-ohm-to
**SKU**: IPA60R080P7XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.6600
**Stock**: 200+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS P7 |
| Qualification | - |
| Power Dissipation | 29W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 37A |
| Drain Source On State Resistance | 0.069ohm |
| Gate Source Threshold Voltage Max | 3.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986442/)

**IPA60R080P7** 

## **MOSFET** 

cooler. switching applications even more efficient, more compact and much 

## **Features** 

DS(on) DS(on) *A 

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**----- Start of picture text -----**<br>
Drain<br>Pin 2, Tab :<br>oN<br>Gate o s<br>Pin 1<br>Vey<br>+<br>Source<br>Pin 3<br>**----- End of picture text -----**<br>


## **Benefits** 

* Ease of use and fast design-in through low ringing tendency and usage 

|**Parameter**|**Value**|**Value**||**Unit**||||
|---|---|---|---|---|---|---|---|
|VDS @Tj,max|650|||V||||
|RDS(on),max|80|||mΩ||||
|Qg,typ|51|||nC||||
|ID,pulse|110|||A||||
|Eoss @400V|5.5|||µJ||||
|Bodydiode diF/dt|900|||A/µs||||
|||||||||
|||**Package**|||**Marking**|||
|IPA60R080P7||PG-TO 220 FullPAK|PG-TO 220 FullPAK||60R080P7||see Appendix A|



Final Data Sheet 

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**600V�CoolMOSª�P7�Power�Transistor IPA60R080P7** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 

Final Data Sheet 

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Rev.�2.1,��2018-05-15 

**600V�CoolMOSª�P7�Power�Transistor IPA60R080P7** 

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## **1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|37<br>23|A|TC=25°C<br>TC=100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|110|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|118|mJ|ID=5.5A; VDD=50V; see table 10|
|Avalanche energy, repetitive|_E_AR|-|-|0.58|mJ|ID=5.5A; VDD=50V; see table 10|
|Avalanche current, single pulse|_I_AS|-|-|5.5|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|80|V/ns|_V_DS=0...400V|
|Gate source voltage(static)|_V_GS|-20|-|20|V|static;|
|Gate source voltage(dynamic)|_V_GS|-30|-|30|V|AC(f>1 Hz)|
|Power dissipation|_P_tot|-|-|29|W|_T_C=25°C|
|Storage temperature|_T_stg|-55|-|150|°C|-|
|Operating junction temperature|_T_j|-55|-|150|°C|-|
|Mountingtorque|-|-|-|50|Ncm|M2.5 screws|
|Continuous diode forward current|_I_S|-|-|37|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|110|A|_T_C=25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|50|V/ns|_V_DS=0...400V,_I_SD<=37A,_T_j=25°C<br>see table 8|
|Maximum diode commutation speed|diF/dt|-|-|900|A/µs|_V_DS=0...400V,_I_SD<=37A,_T_j=25°C<br>see table 8|
|Insulation withstand voltage|_V_ISO|-|-|2500|V|_V_rms,_T_C=25°C,_t_=1min|



1) Limited by Tj,max. Maximum Duty Cycle D = 0.50; TO-220 equivalent 2) Pulse width tp limited by Tj,max 

3) Identical low side and high side switch with identical RG 

Final Data Sheet 

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Rev.�2.1,��2018-05-15 

**600V�CoolMOSª�P7�Power�Transistor IPA60R080P7** 

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## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction  - case|_R_thJC|-|-|4.28|°C/W|-|
|Thermal resistance,junction  - ambient|_R_thJA|-|-|62|°C/W|leaded|
|Thermal resistance, junction  - ambient<br>for SMD version|_R_thJA|-|-|-|°C/W|-|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6mm (0.063 in.) from case for 10s|



Final Data Sheet 

Rev.�2.1,��2018-05-15 

4 

**600V�CoolMOSª�P7�Power�Transistor IPA60R080P7** 

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## **3�����Electrical�characteristics** 

at� _T_ j=25°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|600|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|3|3.5|4|V|_V_DS=_V_GS,_I_D=0.59mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|1<br>-|µA|_V_DS=600V,_V_GS=0V,_T_j=25°C<br>_V_DS=600V,_V_GS=0V,_T_j=150°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.069<br>0.161|0.080<br>-|Ω|_V_GS=10V,_I_D=11.8A,_T_j=25°C<br>_V_GS=10V,_I_D=11.8A,_T_j=150°C|
|Gate resistance|_R_G|-|4.8|-|Ω|_f_=1MHz,opendrain|
|**Table5Dynamiccharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|2180|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Output capacitance|_C_oss|-|37|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Effective output capacitance, energy<br>related1)|_C_o(er)|-|69|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance, time<br>related2)|_C_o(tr)|-|715|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|15|-|ns|_V_DD=400V,_V_GS=13V,_I_D=11.8A,<br>_R_G=3.3Ω;seetable9|
|Rise time|_t_r|-|10|-|ns|_V_DD=400V,_V_GS=13V,_I_D=11.8A,<br>_R_G=3.3Ω;seetable9|
|Turn-off delay time|_t_d(off)|-|70|-|ns|_V_DD=400V,_V_GS=13V,_I_D=11.8A,<br>_R_G=3.3Ω;seetable9|
|Fall time|_t_f|-|5|-|ns|_V_DD=400V,_V_GS=13V,_I_D=11.8A,<br>_R_G=3.3Ω;seetable9|



## **Table�6�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|11|-|nC|_V_DD=400V,_I_D=11.8A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|16|-|nC|_V_DD=400V,_I_D=11.8A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|51|-|nC|_V_DD=400V,_I_D=11.8A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.2|-|V|_V_DD=400V,_I_D=11.8A,_V_GS=0to10V|



> 1) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 2) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

Rev.�2.1,��2018-05-15 

5 

**600V�CoolMOSª�P7�Power�Transistor IPA60R080P7** 

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## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0V,_I_F=11.8A,_T_j=25°C|
|Reverse recovery time|_t_rr|-|263|-|ns|_V_R=400V,_I_F=6A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Reverse recovery charge|_Q_rr|-|2.9|-|µC|_V_R=400V,_I_F=6A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Peak reverse recovery current|_I_rrm|-|22|-|A|_V_R=400V,_I_F=6A,d_i_F/d_t_=100A/µs;<br>see table 8|



Final Data Sheet 

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Rev.�2.1,��2018-05-15 

**IPA60R080P7** 

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Final Data Sheet 

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**IPA60R080P7** 

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Final Data Sheet 

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**IPA60R080P7** 

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Final Data Sheet 

9 

600V CoolIMOS™ P7 Power Transistor 

**IPA60R080P7** 

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Final Data Sheet 

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**IPA60R080P7** 

**==> picture [504 x 539] intentionally omitted <==**

**----- Start of picture text -----**<br>
Test circuit for diode characteristics Diode recovery waveform<br>V,1 y<br>R 1<br>g Vg feminineee So 7 7<br>$90 % Vps<br>r<br>@™ dv/dt<br>V DS aytt<br>t<br>R 2<br>g<br>dl, / dt } 10%Vie| 5<br>Qe 10% lm<br>I F<br>R 1 = R 2<br>g g<br>Table 9 Switching times<br>Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>V DS<br>V GS 10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>jb JRE<br>Table 10 Unclamped inductive load<br>Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

11 

**600V�CoolMOSª�P7�Power�Transistor IPA60R080P7** 

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## **6�����Package�Outlines** 

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**----- Start of picture text -----**<br>
1 2 3<br>MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>DOCUMENT NO.<br>A 4.50 4.90<br>Z8B00003319<br>A1 2.34 2.85<br>A2 2.42 2.86 REVISION<br>b 0.65 0.90 07<br>b1 0.95 1.38<br>b2 0.95 1.51 SCALE 5:1<br>b3 0.65 1.38 0 1 2 3 4 5mm<br>b4 0.65 1.51<br>c 0.40 0.63<br>D 15.67 16.15<br>D1 8.97 9.83 EUROPEAN PROJECTION<br>E 10.00 10.65<br>e 2.54<br>H 28.70 29.75<br>L 12.78 13.75<br>L1 2.83 3.45<br>�� 3.00 3.30 ISSUE DATE<br>Q 3.15 3.50 27.01.2017<br>**----- End of picture text -----**<br>


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**Figure�1�����Outline�PG-TO�220�FullPAK,�dimensions�in�mm/inches** 

Final Data Sheet 

12 

Rev.�2.1,��2018-05-15 

**IPA60R080P7** 

- 

- 

- 

- 

Final Data Sheet 

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**IPA60R080P7** 

## IPA60R080P7 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2017-05-18|Release of final version|
|2.1|2018-05-15|Updated diagram scalings; Nomenclature of product qualification grade was changed|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

14 



## Links

- [View this product on Novapart](https://novapart.co/products/IPA60R080P7XKSA1/power-mosfet-n-channel-600-v-37-a-0069-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipa60r080p7xksa1/mosfet-n-ch-600v-37a-29w-to-220fp/dp/2986442)
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> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.
