# Power MOSFET, N Channel, 500 V, 11.1 A, 0.45 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2725832/)

**URL**: https://novapart.co/products/IPA50R500CEXKSA2/power-mosfet-n-channel-500-v-111-a-045-ohm-to
**SKU**: IPA50R500CEXKSA2
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2930
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:11.1A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.45ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS CE |
| Qualification | - |
| Power Dissipation | 28W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 13V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 11.1A |
| Drain Source On State Resistance | 0.45ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725832/)

**IPA50R500CE** 

## **MOSFET** 

## **Features** 

## **Applications** 

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Drain<br>Pin 2 ,<br>JEN<br>Gate _<br>Pin 1<br>Source<br>Pin 3<br>**----- End of picture text -----**<br>


|**Parameter**<br>~~Table~~ 1<br>Key ~~Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|VDS @Tj,max|550|V|
|RDS(on),max|0.5|Ω|
|ID|11.1|A|
|Qg,typ|18.7|nC|
|ID,pulse|24|A|
|Eoss @400V|2.02|µJ|



|~~Type/OrderingCode~~<br>~~**|**~~|**Package**<br>~~**|**~~|**Marking**|~~__RelatedLinks~~|
|---|---|---|---|
|IPA50R500CE<br>~~Type/OrderingCode~~<br>~~**|**~~|PG-TO 220 FullPAK<br>~~**|**~~|50S500CE|see Appendix A<br>~~__Related Links~~|



## IPA50R500CE 

Final Data Sheet 

1 

**500V�CoolMOSª�CE�Power�Transistor IPA50R500CE** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 

Final Data Sheet 

2 

Rev.�2.1,��2016-06-13 

**500V�CoolMOSª�CE�Power�Transistor IPA50R500CE** 

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**1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|11.1<br>7.0|A|TC= 25°C<br>TC= 100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|24|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|129|mJ|ID=2.9A; VDD= 50V|
|Avalanche energy, repetitive|_E_AR|-|-|0.20|mJ|ID=2.9A; VDD= 50V|
|Avalanche current, repetitive|_I_AR|-|-|2.9|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|50|V/ns|_V_DS=0...400V|
|Gate source voltage|_V_GS|-20<br>-30|-<br>-|20<br>30|V|static;<br>AC (f>1 Hz)|
|Power disspiation(Full PAK)|_P_tot|-|-|28.0|W|_T_C=25°C|
|Operatingand storage temperature|_T_j,_T_stg|-40|-|150|°C|-|
|Mountingtorque|-|-|-|50|Ncm|M2.5 screws|
|Continuous diode forward current|_I_S|-|-|4.6|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|24.0|A|TC= 25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|15|V/ns|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C|
|Maximum diode commutation speed3)|dif/dt|-|-|500|A/µs|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C|
|Insulation withstand voltage for TO-220<br>FullPAK|_V_ISO|-|-|2500|V|_V_rms,_T_C=25°C,_t_=1min|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics�TO220�Full�PAK** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction  - case|_R_thJC|-|-|4.46|°C/W|-|
|Thermal resistance,junction  - ambient|_R_thJA|-|-|80|°C/W|leaded|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6mm (0.063 in.) from case for 10s|



> 1) Limited by Tj max <150°C, Maximum Duty Cycle D = 0.5, TO220 equivalent 

> 2) Pulse width tp limited by Tj,max 

> 3) _V_ DClink=400V;� _V_ DS,peak< _V_ (BR)DSS;�identical�low�side�and�high�side�switch�with�identical� _R_ G 

Final Data Sheet 

3 

Rev.�2.1,��2016-06-13 

**500V�CoolMOSª�CE�Power�Transistor IPA50R500CE** 

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## **3�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|500|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|2.50|3|3.50|V|_V_DS=_V_GS,_I_D=0.2mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|1<br>-|µA|_V_DS=500V,_V_GS=0V,_T_j=25°C<br>_V_DS=500V,_V_GS=0V,_T_j=150°C|
|Gate-source leakage curent|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.45<br>1.17|0.50<br>-|Ω|_V_GS=13V,_I_D=2.3A,_T_j=25°C<br>_V_GS=13V,_I_D=2.3A,_T_j=150°C|
|Gate resistance|_R_G|-|3|-|Ω|_f_=1MHz,opendrain|
|**Table5Dynamiccharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|433|-|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Output capacitance|_C_oss|-|31|-|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Effective output capacitance, energy<br>related1)|_C_o(er)|-|25|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance, time<br>related2)|_C_o(tr)|-|100|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|6|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.9A,<br>_R_G=3.4Ω|
|Rise time|_t_r|-|5|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.9A,<br>_R_G=3.4Ω|
|Turn-off delay time|_t_d(off)|-|30|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.9A,<br>_R_G=3.4Ω|
|Fall time|_t_f|-|12|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.9A,<br>_R_G=3.4Ω|
|**Table6Gatechargecharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|2.3|-|nC|_V_DD=400V,_I_D=2.9A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|10|-|nC|_V_DD=400V,_I_D=2.9A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|18.7|-|nC|_V_DD=400V,_I_D=2.9A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.3|-|V|_V_DD=400V,_I_D=2.9A,_V_GS=0to10V|



> 1) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 2) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

Rev.�2.1,��2016-06-13 

4 

**500V�CoolMOSª�CE�Power�Transistor IPA50R500CE** 

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## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.85|-|V|_V_GS=0V,_I_F=2.9A,_T_j=25°C|
|Reverse recoverytime|_t_rr|-|180|-|ns|_V_R=400V,_I_F=2.9A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge|_Q_rr|-|1.2|-|µC|_V_R=400V,_I_F=2.9A,d_i_F/d_t_=100A/µs|
|Peak reverse recoverycurrent|_I_rrm|-|12|-|A|_V_R=400V,_I_F=2.9A,d_i_F/d_t_=100A/µs|



Final Data Sheet 

Rev.�2.1,��2016-06-13 

5 

**IPA50R500CE** 

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40 10 [1]<br>a EEA HEE re<br>0.5<br>i Cae<br>a Se<br>30<br>0.2<br>t e 10 [0] LIIL<br>0.1 et OY a eeil<br>0.05<br>20<br>a ES i Aan<br>0.02<br>NG Lee IM ETI LIE I<br>0.01<br>tN 44<br>10 [-1]<br>|<br>10 \ single pulse T TTT eer<br>SENT |<br>NT TI PEATE FE ETT ETT<br>eee<br>0 10 [-2]<br>0 a 40 80 ee 120  ee 160 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>T C [°C] t p [s]<br>param P tot=f( T C) e Z thJC t P ters D=t p/ T<br>tot<br>P thJC<br>Z<br>**----- End of picture text -----**<br>


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Final Data Sheet 

6 

**IPA50R500CE** 

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Final Data Sheet 

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**IPA50R500CE** 

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Final Data Sheet 

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**IPA50R500CE** 

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10 [4] 3.0<br>SSS ee<br>BREESE | 2.5 SEE EES<br>PEPER pe<br>MEE a ee<br>10 [3]<br>=== === = SSS a Aee<br>Ciss<br>2.0<br>TAT TE ETT eye PPP hdPrPrE TT rT<br>e PEPEANIPP rrr po EEE4 + 4<br>° 10 [2] | JB 1.5<br>(=.= === SSSSSeS a<br>Coss<br>> Z|<br>ASEae ee | 1.0 ESA<br>PACS<br>WEE a<br>10 [1] ee ee ee ee<br>Crss<br>0.5<br>=== =86===2-—-------- 1<br>FERRER<br>Pt tt tt tTRRRPe PPERTET TP TT | EA<br>A<br>10 [0] 0.0<br>0 100 200 300 400 500 0 100 200 300 400 500<br>V DS V DS<br>[Vv] [Vv]<br>C =f( V DS V GS f E oss = f (V DS )<br>[eC OOOOOCCOCSCSCSC“‘CSCSCSCS<br>C oss<br>E<br>**----- End of picture text -----**<br>


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10 [2]<br>BREESE rT TTT? TtEEREttt EEREtt tT tT tt EEREtt tTEEE<br>a<br>TTT TTT TTT TTT TE TT TT Ty TT<br>PTET ETT ET EE ET<br>UTETET<br>10 [1]<br>SSE RSSerr<br>rrrrTrrflrfrfriyATYsrrerrsyrtlyryyyy<br>ee a<br>125 °C<br>25 °C<br>x yt. ST<br>ALY PELE<br>10 [0] POPPEPAUTP ANETTA<br>SS55o aoe fo coassaaSSccsoe<br>BERD 2eee<br>OGG 2 ee<br>Si ee<br>Oe aee<br>UATE<br>10 [-1]<br>0.4 0.6 0.8 1.0 1.2 1.4<br>V SD [Vv]<br>I F=f( V SD T j<br>I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**500V�CoolMOSª�CE�Power�Transistor IPA50R500CE** 

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## **5�����Test�Circuits** 

## **Table�8�����Diode�characteristics** 

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**----- Start of picture text -----**<br>
Test circuit for diode characteristics Diode recovery waveform<br>V ,I<br>R g 1 VDS(peak) VDS<br>VDS<br>V DS IF tF trr tS<br>R g  2 dIF / dt<br>I F t<br>QF QS 10 %Irrm<br>R g 1 = RI F g  2 Irrm dIrr / dt tQrrrr =t= QF +tF S+QS<br>Table�9�����Switching�times<br>Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>V DS<br>V GS 10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>**----- End of picture text -----**<br>


## **Table�9�����Switching�times** 

## **Table�10�����Unclamped�inductive�load** 

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**----- Start of picture text -----**<br>
Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

10 

Rev.�2.1,��2016-06-13 

**500V�CoolMOSª�CE�Power�Transistor IPA50R500CE** 

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## **6�����Package�Outlines** 

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DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.<br>MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX DOCUMENT NO.<br>A 4.50 4.90 0.177 0.193 Z8B00181328<br>A1 2.34 2.80 0.092 0.110<br>A2 2.42 2.86 0.095 0.113 SCALE 0<br>b 0.65 0.90 0.026 0.035<br>b1 0.95 1.38 0.037 0.054 2.5<br>b2 1.20 1.50 0.047 0.059<br>b3 0.65 1.38 0.026 0.054 0 2.5<br>b4 1.20 1.50 0.047 0.059 5mm<br>c 0.40 0.63 0.016 0.025<br>D 15.67 16.15 0.617 0.636 EUROPEAN PROJECTION<br>D1 8.97 9.83 0.353 0.387<br>E 10.00 10.65 0.394 0.419<br>e 2.54 (BSC) 0.100 (BSC)<br>e1 5.08 0.200<br>N 3 3<br>H 28.70 29.75 1.130 1.171 ISSUE DATE<br>L 12.78 13.75 0.503 0.541 29-04-2016<br>L1 2.83 3.45 0.111 0.136<br>�� 3.00 3.38 0.118 0.133 REVISION<br>Q 3.15 3.50 0.124 0.138 01<br>**----- End of picture text -----**<br>


## **Figure�1�����Outline�PG-TO�220�FullPAK,�dimensions�in�mm/inches** 

Final Data Sheet 

11 

Rev.�2.1,��2016-06-13 

**IPA50R500CE** 

- 

- 

Final Data Sheet 

12 

**IPA50R500CE** 

## IPA50R500CE 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2014-06-12|Release of final version|
|2.1|2016-06-13|Updated ID ratings, package marking code & package drawing|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

13 



## Links

- [View this product on Novapart](https://novapart.co/products/IPA50R500CEXKSA2/power-mosfet-n-channel-500-v-111-a-045-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipa50r500cexksa2/mosfet-n-ch-500v-11-1a-to-220fp/dp/2725832)
---

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