# Power MOSFET, N Channel, 500 V, 18.1 A, 0.25 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2709921/)

**URL**: https://novapart.co/products/IPA50R280CEXKSA2/power-mosfet-n-channel-500-v-181-a-025-ohm-to
**SKU**: IPA50R280CEXKSA2
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3970
**Stock**: 500+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:18.1A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS CE |
| Qualification | - |
| Power Dissipation | 30.4W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 13V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 18.1A |
| Drain Source On State Resistance | 0.25ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709921/)

**IPA50R280CE** 

## **MOSFET** 

## **Features** 

## **Applications** 

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**----- Start of picture text -----**<br>
Drain<br>Pin 2 ,<br>JEN<br>Gate _<br>Pin 1<br>Source<br>Pin 3<br>**----- End of picture text -----**<br>


|**Parameter**<br>~~Table~~ 1<br>Key ~~Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|VDS @Tj,max|550|V|
|RDS(on),max|0.28|Ω|
|ID|18.1|A|
|Qg,typ|32.6|nC|
|ID,pulse|42.9|A|
|Eoss @400V|3.2|µJ|



|~~Type/OrderingCode~~<br>~~**|**~~|**Package**<br>~~**|**~~|**Marking**|~~__RelatedLinks~~|
|---|---|---|---|
|IPA50R280CE<br>~~Type/OrderingCode~~<br>~~**|**~~|PG-TO 220 FullPAK<br>~~**|**~~|50S280CE|see Appendix A<br>~~__Related Links~~|



## IPA50R280CE 

Final Data Sheet 

1 

**500V�CoolMOSª�CE�Power�Transistor IPA50R280CE** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 

Final Data Sheet 

2 

Rev.�2.3,��2016-06-10 

**500V�CoolMOSª�CE�Power�Transistor IPA50R280CE** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|18.1<br>11.4|A|TC= 25°C<br>TC= 100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|42.9|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|231|mJ|ID=5.2A; VDD= 50V|
|Avalanche energy, repetitive|_E_AR|-|-|0.35|mJ|ID=5.2A; VDD= 50V|
|Avalanche current, repetitive|_I_AR|-|-|5.2|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|50|V/ns|_V_DS=0...400V|
|Gate source voltage|_V_GS|-20<br>-30|-<br>-|20<br>30|V|static;<br>AC (f>1 Hz)|
|Power disspiation(Full PAK)|_P_tot|-|-|30.4|W|_T_C=25°C|
|Operatingand storage temperature|_T_j,_T_stg|-40|-|150|°C|-|
|Mountingtorque|-|-|-|50|Ncm|M2.5 screws|
|Continuous diode forward current|_I_S|-|-|6.5|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|42.9|A|TC= 25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|15|V/ns|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C|
|Maximum diode commutation speed3)|dif/dt|-|-|500|A/µs|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C|
|Insulation withstand voltage for TO-220<br>FullPAK|_V_ISO|-|-|2500|V|_V_rms,_T_C=25°C,_t_=1min|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics�TO-220�FullPAK** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction  - case|_R_thJC|-|-|4.11|°C/W|-|
|Thermal resistance,junction  - ambient|_R_thJA|-|-|80|°C/W|leaded|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6mm (0.063 in.) from case for 10s|



> 1) Limited by Tj max <150°C, Maximum Duty Cycle D = 0.5, TO220 equivalent 

> 2) Pulse width tp limited by Tj,max 

> 3) _V_ DClink=400V;� _V_ DS,peak< _V_ (BR)DSS;�identical�low�side�and�high�side�switch�with�identical� _R_ G 

Final Data Sheet 

3 

Rev.�2.3,��2016-06-10 

**500V�CoolMOSª�CE�Power�Transistor IPA50R280CE** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|500|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|2.50|3|3.50|V|_V_DS=_V_GS,_I_D=0.35mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|1<br>-|µA|_V_DS=500V,_V_GS=0V,_T_j=25°C<br>_V_DS=500V,_V_GS=0V,_T_j=150°C|
|Gate-source leakage curent|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.25<br>0.66|0.28<br>-|Ω|_V_GS=13V,_I_D=4.2A,_T_j=25°C<br>_V_GS=13V,_I_D=4.2A,_T_j=150°C|
|Gate resistance|_R_G|-|3|-|Ω|_f_=1MHz,opendrain|
|**Table5Dynamiccharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|773|-|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Output capacitance|_C_oss|-|49|-|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Effective output capacitance, energy<br>related1)|_C_o(er)|-|40|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance, time<br>related2)|_C_o(tr)|-|173|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|8|-|ns|_V_DD=400V,_V_GS=13V,_I_D=5.2A,<br>_R_G=3.4Ω|
|Rise time|_t_r|-|6.4|-|ns|_V_DD=400V,_V_GS=13V,_I_D=5.2A,<br>_R_G=3.4Ω|
|Turn-off delay time|_t_d(off)|-|40|-|ns|_V_DD=400V,_V_GS=13V,_I_D=5.2A,<br>_R_G=3.4Ω|
|Fall time|_t_f|-|7.6|-|ns|_V_DD=400V,_V_GS=13V,_I_D=5.2A,<br>_R_G=3.4Ω|
|**Table6Gatechargecharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|4.2|-|nC|_V_DD=400V,_I_D=5.2A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|17.1|-|nC|_V_DD=400V,_I_D=5.2A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|32.6|-|nC|_V_DD=400V,_I_D=5.2A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.3|-|V|_V_DD=400V,_I_D=5.2A,_V_GS=0to10V|



> 1) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 2) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

Rev.�2.3,��2016-06-10 

4 

**500V�CoolMOSª�CE�Power�Transistor IPA50R280CE** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.85|-|V|_V_GS=0V,_I_F=5.2A,_T_j=25°C|
|Reverse recoverytime|_t_rr|-|230|-|ns|_V_R=400V,_I_F=5.2A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge|_Q_rr|-|2.2|-|µC|_V_R=400V,_I_F=5.2A,d_i_F/d_t_=100A/µs|
|Peak reverse recoverycurrent|_I_rrm|-|17.5|-|A|_V_R=400V,_I_F=5.2A,d_i_F/d_t_=100A/µs|



Final Data Sheet 

Rev.�2.3,��2016-06-10 

5 

**IPA50R280CE** 

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40 10 [1]<br>Se Se me<br>0.5<br>a en ae aware oo eT<br>30 aR OONS Tianaan<br>0.2<br>10 [0]<br>a emanate ee AcE<br>fp PfeztTett eae<br>0.1<br>Sa 20 a 0.05 a AVG<br>—ea<br>pfaa{| {| \j _} tt 0.02 TMAes)y/0 TT I N ETTCTT|TT<br>10 [-1]<br>0.01<br>10<br>po single pulse PTT tT Pr<br>a NN PoC<br>a O A Soooh<br>PN |<br>ee<br>0 10 [-2]<br>0 a 40 ee 80 eee 120 160 OO 10 [-5] A 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>T C [°C] t p [s]<br>p P tot=f( T C) i Z thJC t P pararmeters D=t p/ T<br>10 [2] 10 [2]<br>a ee ee Lt oT TTT tty TT TTT TT TTT)<br>Pott TTT VALE NS a ee<br>NI N 1 µs E AN 1 µs ee<br>10 [1] R ON 10 [1] Na<br>TIN ON 10 µs UI | LLANETI<br>10 µs<br>}__| 41 NER RE ANS NSTIN NE<br>SNS 100 µs 4) IN NN NTN LN<br>100 µs<br>2 10 [0] ZINN SST 10 [0] AHN SNE<br>CLINEON UIIRON 1 ms  CIE Jz ZL UTTIN<br>1 ms<br>SS EEE REHMTENN NN<br>10 ms<br>HH oS ani a aNS<br>A 10 ms<br>| HHT, NT<br>10 [-1] 10 [-1]<br>I INU DC | LE TINT<br>SS NE SSE<br>a Oe DC<br>a ee — sl oe iT Itt<br>ee ee ee ee | [INET]<br>a i<br>EI PEPE) I PEPE)<br>10 [-2] 10 [-2]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [0] 10 [1] 10 [2] 10 [3]<br>V DS V DS<br>[Vv] [Vv]<br>I D=f( V DS T C D t p I D=f( V DS T C D t p<br>tot<br>P thJC<br>Z<br>I D I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

**IPA50R280CE** 

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**----- Start of picture text -----**<br>
60 35<br>a a a<br>pF a a<br>ae es a<br>50 aa aee 30 eeee 20 V<br>10 V<br>20 V<br>e se tH_<br>ee a 2<br>po—— ss— 25 a al<br>40<br>10 V 8 V<br>~,, ———<br>8 V<br>20<br>= r s A e 7 V<br>30<br>Sf} YXe e EE TTT<br>7 a 9<br>15<br>7 V<br>6 V<br>20 ee L— ———— ——_ f F<br>—O—EE 10 r r)2<br>e/a 6 V ey Ze 5.5 V<br>10 5.5 V 5 5 V<br>5 V 4.5 V<br>l ——————— ey A  ee<br>0 Ia — 4.5 V - 1)— _ A<br>0 S TO -OO 0 i<br>0 5 10 15 20 0 5 10 15 20<br>V DS [V] V DS [V]<br>I D=f( V DS ); T j =25 °C; parameter: V GS I D=f( V DS ); T j =125 °C; parameter: V GS<br>I D I D<br>**----- End of picture text -----**<br>


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Final Data Sheet 

7 

**IPA50R280CE** 

**==> picture [526 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
50 10<br>SEER ee ESE EEE EEE EEE EEEeee PTCCELELELELELUYA LL<br>45 9<br>BERR See EEE EEEEEEEEEEEES 25 °C | Ce [/<br>40 8 120 V<br>eee<br>SeeA eee | Ceea,<br>35 7<br>BCSaSSeS || COC ee 400 V<br>30 6<br>2_ 25 eSGRRRReERe eee | CULE 5 LETTT TTT TT<br>ee<br>a ee eeee e e fe Co e<br>150 °C<br>20 4<br>2<br>eeSESEeeeee)eee eee | | CO C<br>15 3<br>se ee eee<br>ee) ecanesaaseaaer 2aaaeese=eee eee SPEECEECECCECEELEE<br>ee<br>10 2<br>seA a eeaeeeseeere BD 7, aceseeaeee2 eee FECEECE CECE<br>5 1<br>A 22 ee<br>eeeBSSSSeS | POC<br>0 SSS SS S eee eee 0 PLETE TTT TPE e tee t yt ty yy<br>0 2 4 6 8 10 0 10 20 30 40<br>V GS [V] Q gate [nC]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j V GS=f( Q gate I D V DD<br>I D V GS<br>**----- End of picture text -----**<br>


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260 580<br>FEE EEE EEE EEE EEE EEE EEEEE<br>BEES EEE EEE EEE EEE EEREEEE<br>240<br>BEERS<br>220 BEES EEEEEEEEEEEE 560<br>BEES  EEEEEEEEREESSEC Y<br>BEES EREEEEEEE EEEEEEEEE EEEEEE Y<br>200<br>BEES EEE EEESEESEEE<br>Pept  EERE EEEEEE EEE EERE EEE 540 4<br>180 BEES ere mee ee eee y Z|<br>BEES E EREEREEEEEEE EEEEEEE EE EEEEE y,<br>160<br>BEES EEERSE EEE EEE EEE /<br>520<br>PERERA | Z<br>yyBEERS 140 eeEEEEEREEE EEEEEEeee EEE eeeEEE, >| YWa<br>120<br>S 100 [TTTBEES[TTTFEREEE TTT EEETTTEEE TTTTTEEE Teter rPaATTTNEEERErpATTEEEEEETTTTTTEEE EEEEEE Pttert TTTEEETye etTTTeEEEEEEettttttyEEEtet tt 500 TTTy /EAT|<br>80 B E E S EEEERSEEE E ERENCESEEEEEEEEE LATAyy,<br>FEES EEEEEN EEE EEE EEE 480 Y<br>60 BEERS EEEEERE EEE y<br>BEES EEE EEE EEEENE<br>40 BEESBEERSEEE EEEEEEEREEEE 460<br>20 BEES EEEEEEEEEEEEEEEERSEEEEEEEEEEEEEEEEEENEEE EEEEE<br>BEES EEE EEEEEE EEE EEE SSE<br>0 TT TtTrytrtrr rt? rr tty ttt tT et tT tT tT TT SS T TT 440<br>0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150<br>T j Pc] T j Pc]<br>E AS=f( T j I D V DD V BR(DSS)=f( T j I D<br>AS<br>E<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**IPA50R280CE** 

**==> picture [538 x 290] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [4] 4.5<br>==SS2=—=====——====——a Ee f|<br>EOC EEE EE EEE 4.0 a<br>TELEEE EEE EEE LE] A<br>Ciss 3.5<br>10 [3] Ve ————————<br>, -——_--—_-- —_--___-______- ___-____--__--__- - cr | | | | |~— | | YW | |<br>BIER 3.0 cc<br>PAE ———<br>ACCC<br>2.5<br>EWN 10 [2] | Ee<br>Coss<br>2.0<br>SIGE  ee<br>A NoSRE EEE — ——— ——<br>1.5<br>EAE eS ——<br>10 [1] TNE TET —————————<br>Crss 1.0<br>PeePT tt tT ee tT TTT ET TT 0.5 Oyaee ee<br>10 [0] PPLE EEERL LEE EER LLL 0.0 ——————————YA CC<br>0 100 200 300 400 500 0 100 200 300 400 500<br>V DS V DS<br>C =f( V DS V GS f E oss = f (V DS )<br>ve [V] OO [OOOOCOOSCOCSCSCSCSCSCSSCS*dY] wal<br>C oss<br>E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [2]<br>FERREEERE EEE ERE EEEEEEEEEEH<br>Yr | Tt tT | tT ee te te eT tT rE rT Thr hE cE hr hh TT<br>rT Tt tT tet tte ett TT eet TT ET<br>CO eer<br>PLT ELL EEL LEE | LER LE<br>TTT<br>10 [1]<br>BREE EREARE<br>ae 125 °C oe)eee<br>25 °C<br>_ PEE Cee<br>~ poofry FECEECEELE<br>10 [0] AHMTAARYUAURUTATATAAAR<br>(| | | 7] | | TFT TT tT TT rT rE hr rT rT rT TT TTT<br>BRE sesee<br>S000 Gonesee<br>BOE) /RERT SRRR RRR RR RRR EeD<br>LLEEELV E ELL<br>10 [-1] EEL EE<br>0.4 0.6 0.8 1.0 1.2 1.4<br>V SD [V]<br>I F=f( V SD T j<br>I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**500V�CoolMOSª�CE�Power�Transistor IPA50R280CE** 

**==> picture [120 x 53] intentionally omitted <==**

## **5�����Test�Circuits** 

## **Table�8�����Diode�characteristics** 

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Test circuit for diode characteristics Diode recovery waveform<br>V ,I<br>R g 1 VDS(peak) VDS<br>VDS<br>V DS IF tF trr tS<br>R g  2 dIF / dt<br>I F t<br>QF QS 10 %Irrm<br>R g 1 = RI F g  2 Irrm dIrr / dt tQrrrr =t= QF +tF S+QS<br>Table�9�����Switching�times<br>Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>V DS<br>V GS 10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>**----- End of picture text -----**<br>


## **Table�9�����Switching�times** 

## **Table�10�����Unclamped�inductive�load** 

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Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

10 

Rev.�2.3,��2016-06-10 

**500V�CoolMOSª�CE�Power�Transistor IPA50R280CE** 

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## **6�����Package�Outlines** 

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DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.<br>MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX DOCUMENT NO.<br>A 4.50 4.90 0.177 0.193 Z8B00181328<br>A1 2.34 2.80 0.092 0.110<br>A2 2.42 2.86 0.095 0.113 SCALE 0<br>b 0.65 0.90 0.026 0.035<br>b1 0.95 1.38 0.037 0.054 2.5<br>b2 1.20 1.50 0.047 0.059<br>b3 0.65 1.38 0.026 0.054 0 2.5<br>b4 1.20 1.50 0.047 0.059 5mm<br>c 0.40 0.63 0.016 0.025<br>D 15.67 16.15 0.617 0.636 EUROPEAN PROJECTION<br>D1 8.97 9.83 0.353 0.387<br>E 10.00 10.65 0.394 0.419<br>e 2.54 (BSC) 0.100 (BSC)<br>e1 5.08 0.200<br>N 3 3<br>H 28.70 29.75 1.130 1.171 ISSUE DATE<br>L 12.78 13.75 0.503 0.541 29-04-2016<br>L1 2.83 3.45 0.111 0.136<br>�� 3.00 3.38 0.118 0.133 REVISION<br>Q 3.15 3.50 0.124 0.138 01<br>**----- End of picture text -----**<br>


## **Figure�1�����Outline�PG-TO�220�FullPAK,�dimensions�in�mm/inches** 

Final Data Sheet 

11 

Rev.�2.3,��2016-06-10 

**IPA50R280CE** 

- 

- 

Final Data Sheet 

12 

**IPA50R280CE** 

## IPA50R280CE 

## Previous Revision 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2011-06-08|Release of final data sheet|
|2.1|2011-06-16|Release of final data sheet|
|2.2|2014-06-12|Release of final datasheet|
|2.3|2016-06-10|Updated ID ratings, package marking code & package drawing|



## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

13 



## Links

- [View this product on Novapart](https://novapart.co/products/IPA50R280CEXKSA2/power-mosfet-n-channel-500-v-181-a-025-ohm-to)
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- [Supplier page](https://es.farnell.com/infineon/ipa50r280cexksa2/mosfet-n-ch-500v-18-1a-to-220fp/dp/2709921)
---

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