# Power MOSFET, N Channel, 550 V, 23 A, 0.14 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:1663985/)

**URL**: https://novapart.co/products/IPA50R140CPXKSA1/power-mosfet-n-channel-550-v-23-a-014-ohm-to-220fp
**SKU**: IPA50R140CPXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.5200
**Stock**: 200+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 34W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 550V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 23A |
| Drain Source On State Resistance | 0.14ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1663985/)

## **IPA50R140CP** 

## **CoolMOS[TM] Power Transistor** 

## **Features** 

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## **CoolMOS CP is designed for:** 

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|||“@<br>pin1|“@|“@|
|---|---|---|---|---|
|**Type**<br>**Package**||**Marking**<br>“@<br>pin 1|“@|“@|
|||“@|“@|“@|
|BI9.)K*-)<I<br>I@&MH++)?I||.K*-)I<br>ping|||
||||||
|**Maximum ratings,**7J฀_T_\<br>=25 °C, unless otherwise specified|||||
|**Parameter**<br>EDJ?DKEKI฀:H7?D฀9KHH;DJ*#<br>-KBI;:฀:H7?D฀9KHH;DJ+#<br>_t_9K<br>+#%,#<br>_t_9K<br>+#%,#<br>*,0#"1฀:_v_(V_t_฀HK==;:D;II<br>$7J;฀IEKH9;฀LEBJ7=;<br>~~Avalanche energy, single pulse~~<br>~~Avalanche energy, repetitive~~<br>Avalanche current, repetitive||**Symbol Conditions**<br>_I_=<br>_T_<<br>_T_<<br>_I_=%bg^eW<br>_T_<<br>_E_9L<br>_I_=<br>_V_==<br>/*/<br>_E_9K<br>_I_=<br>_V_==<br>_I_9K<br>:_v_(V_t_<br>_V_=L<br>_V_@L<br>efSf[U<br>w,)<br>)'2,<br>2',<br>.)<br>w+)<br>**Value**<br>+,<br>*.<br>./<br>~~rr~~<br>~~ee~~<br>~~ee~~<br>~~aee~~<br>~~pf 93a, 50M fo~~<br>~~pf 93a, 50M fo~~<br> ~~re~~<br>~~esee ee~~<br>~~eae~~||**Unit**<br>9<br>_C<br>9<br>O(e<br>O|
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Rev. 2.2 

Page 1 

2018-02-14 

## **IPA50R140CP** 

**Maximum ratings,** 7J฀ _T_ \ 

|**IPA50R140CP**<br>ae<br>Cinfineon|**IPA50R140CP**<br>ae<br>Cinfineon|**IPA50R140CP**<br>ae<br>Cinfineon|**IPA50R140CP**<br>ae<br>Cinfineon|**IPA50R140CP**<br>ae<br>Cinfineon|**IPA50R140CP**<br>ae<br>Cinfineon|**IPA50R140CP**<br>ae<br>Cinfineon|
|---|---|---|---|---|---|---|
|**Maximum ratings,**7J฀_T_\<br>=25 °C, unless otherwise specified|||||||
|**Parameter**|**Symbol **<br>~~ee~~|**Conditions**<br>~~ee~~|**Value**|||**Unit**|
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||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Thermal characteristics**|||||||
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|**Electrical characteristics,**7J฀_T_\<br>=25 °C, unless otherwise specified|||||||
|**Static characteristics**|||||||
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|||_V_=L<br>_V_@L<br>_T_\<br>=500 V,<br>=0V,<br>=150 °C|&|+)|&||
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|||_V_@L<br>_I_=<br>_T_\<br>=10V,<br>=14A,<br>=150 °C|&|)',+|&||
|$7J;฀H;I?IJ7D9;|_R_@|_f_||||"|
||||||||



Rev. 2.2 

Page 2 

2018-02-14 

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|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics**|||||||
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|**Reverse Diode**|||||||
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Rev. 2.2 

Page 3 

2018-02-14 

**IPA50R140CP** 

**==> picture [92 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
2 Safe operating area<br>**----- End of picture text -----**<br>


**==> picture [86 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 Power dissipation<br>**----- End of picture text -----**<br>


_P_ faf6X"6X" _T_ <## 

**==> picture [421 x 599] intentionally omitted <==**

**----- Start of picture text -----**<br>
 faf6X"6X" T  <## I  =6X" V  =L yy T  < -=25 °C; D  6)<br>parameter: t  b<br>35 10 [2]<br>1us<br>30<br>B?C?J;:฀8O฀ED IJ7J; 10 us<br>dWe[efS`UW<br>25<br>10 [1]<br>20 ‘X 100 us<br>10 ms<br>15<br>10 [0] =<<br>10<br>5<br>2 ims<br>0 10 [-1]<br>0 50 100 150 10 [0] 10 [1] 10 [2] 10 [3]<br>T  C [°C] V  DS [V]<br>3 Max. transient thermal impedance 4 Typ. output characteristics<br>"fZC<#6X"fb6X"fbb )s I  =6X" V  =L ); T  \ =25 °C<br>parameter: D=t  b( T parameter: V  @L<br>10 [1] 75<br>20V<br>10V<br>) '. gJ 60 ode 8V<br>10 [0]<br>)'+<br>45<br>)'*<br>6V<br>)').<br>30<br>10 [-1] )')+ / 5.5V<br>)')*<br>15<br>5VvV<br>I?D=B;฀FKBI;<br>10 [-2] 0<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 0 5 10 15 20<br>t  p [s] V  DS [V]<br> [W]  [A]<br>P  tot I  D<br> [K/W]  [A]<br>I  D<br> thJC<br>Z<br>**----- End of picture text -----**<br>


**3 Max. transient thermal impedance** 

R"fZC<#6X"fb6X"fbb 

Rev. 2.2 

2018-02-14 

Page 4 

**IPA50R140CP** 

## **5 Typ. output characteristics** 

## **6 Typ. drain-source on-state resistance** 

_I_ =6X" _V_ =L ); _T_ \ 

_R_ =L"a`#6X" _I_ = ); _T_ \ 

**==> picture [422 x 580] intentionally omitted <==**

**----- Start of picture text -----**<br>
parameter: V  @L parameter: V  @L<br>50 0.8<br>20V<br>10V 0.7<br>40 8V<br>7V<br>6Vv——<br>0.6<br>30<br>G<br>7, 55 ———| 0.5<br>20 y 5.5V<br>Vl — 0.4 4<br>10 45 V 0.3 s<br>0 0.2<br>0 5 10 15 20 25 0 10 20 30 40 50 60<br>V  DS [V] I  D [A]<br>7 Drain-source on-state resistance 8 Typ. transfer characteristics<br> =L"a`#6X"6X" T  \ ); I  = =14A; V  @L =10V I  =6X" V  @L 3 | V  =Lm7+m I  =m R  =L"a`#_Sj<br>parameter: T  \<br>0.35 90<br>0.3 75<br>0.25 60<br>0.2 45<br>fkb<br>0.15 30<br>0.1 15<br>0.05 0<br>-60 -30 0 30 60 90 120 150 180 0 3 5 8 10<br>T  j [°C] V  GS [V]<br>]<br> [A]  [<br>I  D  DS(on)<br>R<br>]<br>[  [A]<br>I  D<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


## **7 Drain-source on-state resistance** 

_R_ =L"a`#6X"6X" _T_ \ ); _I_ = =14A; _V_ @L 

Rev. 2.2 

2018-02-14 

Page 5 

## **IPA50R140CP** 

## **9 Typ. gate charge** 

_V_ @L6X" _Q_ YSfW ); _I_ = 

_V_ == 

## **10 Forward characteristics of reverse diode** 

_I_ ?6X" _V_ L=# 

_T_ \ 

**==> picture [417 x 245] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 10 [2]<br>8<br>VA 150 °C, 98%<br>WiV4 10 [1] 150 °C 25°C<br>6<br>4<br>10 [0]<br>2<br>0 10 [-1]<br>0 10 20 30 40 50 0 0.5 1 1.5 2<br>Q  gate [nC] V  SD [V]<br> [V]  [A]<br>V  GS I  F<br>**----- End of picture text -----**<br>


## **11 Avalanche energy** 

_E_ 9L6X" _T_ \ ); _I_ = =9.3A; _V_ == 

**12 Drain-source breakdown voltage** 

_V_ ;K"=LL#6X" _T_ \ ); _I_ = 

**==> picture [422 x 251] intentionally omitted <==**

**----- Start of picture text -----**<br>
580<br>700<br>560<br>600<br>540<br>500<br>520<br>400<br>500<br>300<br>480<br>200<br>460<br>100<br>440<br>0<br>-60 -20 20 60 100 140 180<br>25 75 125 175<br>T  j [°C] T  j [°C]<br> [V]<br> [mJ] AS  BR(DSS)<br>E V<br>**----- End of picture text -----**<br>


Rev. 2.2 

Page 6 

2018-02-14 

## **IPA50R140CP** 

## **13 Typ. capacitances** 

_C_ 6X" _V_ =L _V_ @L _f_ 

## **14 Typ. Coss stored energy** 

_E_ aee _=_ X _(V_ =L _)_ 

**==> picture [422 x 244] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [5] 12<br>10<br>10 [4]<br><[ee<br>8<br>10 [3]<br><aee 6<br>10 [2]<br>4<br>10 [1]<br><dee 2<br>coe<br>10 [0] Se eaaaeeee 0<br>0 100 200 300 400 500 0 100 200 300 400 500<br>V  DS [V] V  DS [V]<br>[pF]  [µJ]<br>C  oss<br>E<br>**----- End of picture text -----**<br>


Rev. 2.2 

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Page 7 

**IPA50R140CP** 

## **Definition of diode switching characteristics** 

Rev. 2.2 

Page 8 

2018-02-14 

**IPA50R140CP** 

## **Outline PG­TO220 FullPAK** 

**==> picture [484 x 342] intentionally omitted <==**

**----- Start of picture text -----**<br>
IES<br>1 2 3<br>| |<br>[e] ul ' fi c<br>-<-]0 . 381M) |B ]A | 3 x<br>MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>DOCUMENT NO.<br>A 4.50 4.90<br>Loo T T eS a Z8B00003319<br>A1 2.34 2.85<br>ereS A2 2.42 2.86 REVISION<br>eS b 0.65 0.90 07<br>a<br>b1 0.95 1.38<br>A NOTELL S :| aes b2b3 0.950.65 es 1.381.51 0 SCALE 1 2 3 5:1 4 5mm<br>A ND DI M ENSIONS R EFE R TO JE DE C ST AN D A RD TO-281 [——_] b4 0.65 | 1.51<br>O R GATDO EE SBURRSNOT IN C LUDE MOLD FL A SH, PROTRUSIONS = [|a c a 0.40 | 0.63 i _<br>GAT E BURRS A R E L E SS TH A N 0.5 mm eS D 15.67 16.15<br>es D1 8.97 9.83 EUROPEAN PROJECTION<br>E 10.00 10.65<br>eS |<br>a e 2.54 !<br>H 28.70 29.75<br>L 12.78 13.75<br>er<br>eS L1 2.83 3.45<br>eS øP 3.00 3.30 ISSUE DATE<br>a Q a 3.15 3.50 27.01.2017<br>**----- End of picture text -----**<br>


Rev. 2.2 

Page 9 

2018-02-14 

**IPA50R140CP** 

## IPA50R140CP 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.2|2018-02-26|Outline PG-TO220 FullPAK update|



## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

10 



## Links

- [View this product on Novapart](https://novapart.co/products/IPA50R140CPXKSA1/power-mosfet-n-channel-550-v-23-a-014-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipa50r140cpxksa1/mosfet-n-to-220/dp/1663985)
---

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