# Power MOSFET, N Channel, 150 V, 37 A, 0.0091 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2480794/)

**URL**: https://novapart.co/products/IPA105N15N3GXKSA1/power-mosfet-n-channel-150-v-37-a-00091-ohm-to
**SKU**: IPA105N15N3GXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.5700
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 40.5W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 40.5W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0091ohm |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 37A |
| Drain Source On State Resistance | 0.0091ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2480794/)

**IPA105N15N3 G** 

## "%&$!"# **[TM] 3 Power-Transistor** 

## **Features** 

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|---|---|---|---|---|
|Qualified|according|to|JEDEC|)#|
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|S/RoH|&,|
|Type|
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||||||||||
|---|---|---|---|---|---|---|---|---|
|Maximum ratings,|at|V|=25|°C,|unless|otherwise|specified|
|Parameter|Symbol|Conditions|Value|Unit|
|I|9|T|8|*#|+/|6|
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|Operating and storage temperature|Pf|-55|...|175|°C|

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)# 

*# 

## **IPA105N15N3 G** 

|**Parameter**||||**Symbol **|**Conditions**|||**Values**|**Values**||**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||**min.**||**typ.**|**max.**||
|**Thermal characteristics**||||||||||||
|Thermal resistance, junction -|case|||_R__T@8|||%||%|+&/|A'K|
|**Electrical characteristics,**<br>at|V|=25|°C, unless otherwise specified|||||||||
|**Static characteristics**||||||||||||
|~~Drain-source breakdown voltage~~|||_V_"7G#9HH <br>_V_=H"_T#<br>~~P|~~||_V_=H<br>_I_9<br>_V_9H4_V_=H _I_9<br>~~=0V, =1mA ~~||)-(<br>%<br>%<br>*<br>+<br>,<br> ~~Pf~~||||J|
|Zero<br>gate<br>voltage<br>drai<br>ero gate voltage<br>drain curren|t|||_I_9HH|_V_9H<br>_T_V<br>~120V,<br>=25 °C|_V_=H<br>=0N,|%||(&)|)|q6|
||||||_V_9H<br>_T_V<br>=120 V,<br>=125 °C|_V_=H<br>=0V,|%||)(|)((||
|~~Gate-source leakage current~~<br>Drain-source on-state resistance||||_I_=HH<br>_V_=H<br>_V_9H<br>_R_9H"[Z#<br>_V_=H<br>_I_9<br>~~P|~~<br>~~=20 V,~~<br>~~=0V ~~<br>~~=10V, =37A ~~|||%<br>)<br>)((<br>%<br>1&)<br>)(&-<br> ~~Pf]~~<br> ~~PP~~||||Z6<br>Y"|
||||||_V_=H<br>_I_9||%||1&-|))&)||
|||||_R_=|||%||*&,|%|"|
|I]MZ^O[ZPO_MZOQ||||_g_R^|f_V_9Hf5*f_I_9f_R_9H"[Z#YMc<br>_I_9||++||.-|%|H|



+# 

## **IPA105N15N3 G** 

|**IPA105N15N3 G**<br>a,<br>Cinfineon|**IPA105N15N3 G**<br>a,<br>Cinfineon|**IPA105N15N3 G**<br>a,<br>Cinfineon|**IPA105N15N3 G**<br>a,<br>Cinfineon|**IPA105N15N3 G**<br>a,<br>Cinfineon|**IPA105N15N3 G**<br>a,<br>Cinfineon|**IPA105N15N3 G**<br>a,<br>Cinfineon|
|---|---|---|---|---|---|---|
||||||||
|**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Dynamic characteristics**|||||||
||_C_U^^|_V_=H<br>_V_9H<br>_f_<br>" I<br>=0V,<br>=75V,<br>=1<br>~~P|~~|%|+*+(|,+((|\<|
|j<br>Output capacitance<br>~~Reversetransfercapacitance~~|_C_[^^<br>~~P|~~||%<br>~~Pf]~~|+/0<br>~~Pf]~~|-(+<br>~~Pf]~~||
|~~Reversetransfercapacitance~~|_C_]^^<br>~~P|~~||%<br>~~Pf]~~|/<br>~~Pf]~~|%<br>~~Pf]~~||
|~~Reverse transfer capacitance~~|_t_P"[Z#<br>~~P|~~|_V_99<br>_V_=H<br>_I_9<br>_R_=<br>"<br>~~P|~~|%<br>~~Pf]~~|)/<br>~~Pf]~~|%<br>~~Pf]~~|Z^|
||_t_]||%|*(|%||
||_t_P"[RR#||%|+-|%||
||_t_R||%|1|%||
|#<br>Gate Char e Characteristics|||||||
||_Q_S^|_V_99<br>_I_9<br>_V_=H<br>=0 to 10V|%|)/|%|Z8|
||_Q_SP||%|/|%||
|witching charge|_Q_^b||%|)+|%||
||_Q_S||%|,)|--||
||_V_\XM_QM||%|-&)|%|J|
||_Q_[^^|_V_99<br>_V_=H|%|)(.|),)|Z8|
|**Reverse Diode**<br>~~Diodecontinousforwardcurrent~~<br>~~P|~~<br>~~Pf]~~|||||||
|~~Diodecontinousforwardcurrent~~|_I_H<br>~~P|~~|_T_8<br>~~P|~~<br>=25 °C|%<br>~~Pf]~~|%<br>~~Pf]~~|+/<br>~~Pf]~~|6|
|~~Diode continous forward current~~|_I_H$\X^Q<br>~~P|~~||%<br>~~Pf]~~|%<br>~~Pf]~~|),0<br>~~Pf]~~||
|Diode<br>forward<br>volt<br>iode forward<br>voltage|_V_H9|_V_=H<br>_I_<<br>_T_V<br>OM,<br>“STA,<br>=95 °C|%|(&1|)&*|J|
||_t_]]|_V_G<br>_I_<4+/<br>P_i_<'P_t_<br>B|%|))-|%|Z^|
||_Q_]]||%|+0(|%|Z8|
|,#<br>See figure 16 for gate charge parameter definition|||||||



,# 

**IPA105N15N3 G** 

## **1 Power dissipation** 

_P_ _[_4R" _T_ 8# 

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**----- Start of picture text -----**<br>
45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 50 100 150 200<br>T  C [°C]<br>3 Safe operating area<br>4R" V  9H yy T  8 -=25 °C; D  4(<br>parameter: t  \<br>10 [3]<br>limited by on-state<br>]Q^U^_MZOQ<br>B<br>\<br>10 [2] B<br>100 B<br>1ms<br>10 [1]<br>10 ms<br>10 [0]<br>10 [-1]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3]<br>V  DS [V]<br> [W]<br> tot<br>P<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

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**----- Start of picture text -----**<br>
I  94R" V  9H yy T  8 -=25 °C; D  4(<br>**----- End of picture text -----**<br>


## **2 Drain current** 

_I_ 94R" _T_ 8 ); _V_ =H" 

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**----- Start of picture text -----**<br>
40<br>30<br>20<br>10<br>0<br>0 50 100 150 200<br>T  C [°C]<br>4 Max. transient thermal impedance<br> _T@84R"4R" t  \##<br>parameter: D  4 t  \' T<br>10 [1]<br>(&-<br>10 [0] (&*<br>(&)<br>(&(-<br>(&(*<br>10 [-1]<br>(&()<br>single pulse<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>t  p [s]<br> [A]<br>I  D<br> [K/W]<br> thJC<br>Z<br>**----- End of picture text -----**<br>


**4 Max. transient thermal impedance** _Z_ _T@84R"4R" _t_ \## 

**IPA105N15N3 G** 

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5 Typ. output characteristics<br>**----- End of picture text -----**<br>


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6 Typ. drain-source on resistance<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I  94R" V  9H ); T  V =25 °C R  9H"[Z#4R" I  9 ); T  V =25 °C<br>parameter: V  =H parameter: V  =H<br>120 16<br>Pz<br>5V<br>10V<br>100 6V<br>75V<br>12 6V<br>80<br>8V<br>10V<br>60 5.5V 8<br>40<br>4<br>5V<br>20 /<br>45V<br>0 0<br>0 1 2 3 0 10 20 30 40 50 60<br>V  DS [V] I  D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>I  94R" V  =H ys | 9H [f5*f] [I] 9 [f] [R] 9H"[Z#YMc g  R^4R" I  9 yy T  V =25°C<br> [W]<br> [A]<br>I  D<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
parameter: T  V<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 2 4 6 8<br>V  GS [V]<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80<br>I  D [A]<br> [S]<br> fs<br>g<br>**----- End of picture text -----**<br>


**IPA105N15N3 G** 

## **9 Drain-source on-state resistance** 

_R_ 9H"[Z#4R" _T_ V ); _I_ 9 =37A; _V_ =H 

## **10 Typ. gate threshold voltage** 

_V_ =H"_T#4R" _T_ V ); _V_ =H4 _V_ 9H 

_I_ 9 

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**----- Start of picture text -----**<br>
30<br>25<br>20<br>Gq<br>15<br>98 %<br>10 _d\<br>5<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

_C_ 4R" _V_ 9H ): _V_ =H =0V; _f_ =1 " I 

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**----- Start of picture text -----**<br>
4<br>3.5<br>1600 A<br>3<br>160 A<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [V]<br> GS(th)<br>V<br>**----- End of picture text -----**<br>


## **12 Forward characteristics of reverse diode** 

_I_ <4R" _V_ H9# 

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**----- Start of picture text -----**<br>
T<br> V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [4]<br>8U^^<br>10 [3]<br>8[^^<br>10 [2]<br>10 [1] 8]^^<br>0 20 40 60 80 100<br>V  DS [V]<br>[pF]<br>C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [3]<br>10 [2]<br>175 °C, 98%<br>175°C<br>25 °C, 98%<br>10 [1]<br>10 [0]<br>0 0.5 1 1.5 2<br>V  SD [V]<br> [A]<br>I  F<br>**----- End of picture text -----**<br>


**IPA105N15N3 G** 

## **13 Avalanche characteristics** 

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**----- Start of picture text -----**<br>
I  6H4R" t  6J ); R  =H =25 "<br>parameter: T  V"^_M]_#<br>100<br>10<br>1<br>1 10 100 1000<br>t  AV [µs]<br>15 Drain-source breakdown voltage<br>V  7G"9HH#4R" T  V ); I  9 =1mA<br>170<br>165<br>160<br>155<br>150<br>145<br>140<br>135<br>130<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br> [A]<br>I  AS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
14 Typ. gate charge<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V  =H4R" Q  SM_Q ); I  9 =37A pulsed<br>parameter: V  99<br>10<br>120V<br>8<br>75V<br>30V<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50<br>Q  gate [nC]<br> [V]<br> GS<br>V<br>**----- End of picture text -----**<br>


**16 Gate charge waveforms** 

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**----- Start of picture text -----**<br>
V =H<br>Q g<br>V S ^"_T#<br>Q S"_T# Q  ^b Q gate<br>Q  S^ Q  SP<br>**----- End of picture text -----**<br>


**IPA105N15N3 G** 

## **PG-TO220-FP** 

**IPA105N15N3 G** 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved.** 

## Legal **Legal Disclaimer** Disclaimer 

The The information information given given in this in this document document shall in shall no event in no be event regarded be as regarded a guarantee as a of guarantee of conditions or characteristics. conditions or characteristics. With respect With to respect any examples to any examples or hints or hints given given herein, herein, any any typical typical values stated herein and/or values stated any information herein and/or regarding any information the application regarding the of the application device, of Infineon the device, Technologies hereby disclaims any Infineon and Technologies all warranties hereby and disclaims liabilities any and of all any warranties kind, including and liabilities without of any kind, limitation, warranties of noninfringement including without of limitation, intellectual warranties property of rights non-infringement of any third of party. intellectual property rights 

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---

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