# Power MOSFET, N Channel, 80 V, 64 A, 4600 µohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:3577341/)

**URL**: https://novapart.co/products/IPA052N08NM5SXKSA1/power-mosfet-n-channel-80-v-64-a-4600-ohm-to-220fp
**SKU**: IPA052N08NM5SXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6830
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 |
| Qualification | - |
| Power Dissipation | 38W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 64A |
| Drain Source On State Resistance | 4600µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3577341/)

**IPA052N08NM5S** 

## **MOSFET** 

## **OptiMOS** 

## **Features** 

_R_ DS(on) R DS(on) 

|**Parameter**<br>~~Table1~~<br>~~KeyPerformance~~|**Value**<br>~~PerformanceParameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS<br>~~Table 1~~<br>~~Key Performance~~|80<br>~~Performance Parameters~~|V<br>~~Parameters~~|
|_R_DS(on),max|5.2|mΩ|
|_I_D|64|A|
|_Q_oss|51|nC|
|_Q_G(0V..10V)|42|nC|



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Drain<br>Pin 2<br>Gate<br>Pin 1<br>io<br>Source<br>Pin 3<br>**----- End of picture text -----**<br>


|~~Type/OrderingCode|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~|
|---|---|---|---|
|IPA052N08NM5S<br>~~Type/OrderingCode |~~|PG-TO 220 FullPAK<br>~~|~~<br>~~|~~|052N085S|-<br>~~Related Links~~|



Final Data Sheet 

1 

**OptiMOS[TM�] 5�Power-Transistor,�80�V IPA052N08NM5S** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 

Final Data Sheet 

2 

Rev.�2.1,��2019-09-02 

**OptiMOS[TM�] 5�Power-Transistor,�80�V IPA052N08NM5S** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-|-<br>-|64<br>46|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C|
|Pulsed drain current1)|_I_D,pulse|-|-|256|A|_T_C=25°C|
|Avalanche energy, single pulse2)|_E_AS|-|-|84|mJ|_I_D=64A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|38|W|_T_C=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|4|°C/W|-|



## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|80|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.2|3.0|3.8|V|_V_DS=_V_GS,_I_D=65µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=80V,_V_GS=0V,_T_j=25°C<br>_V_DS=80V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|1|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|4.6<br>5.9|5.2<br>-|mΩ|_V_GS=10V,_I_D=32A<br>_V_GS=6V,_I_D=16A|
|Gate resistance3)|_R_G|-|1.1|-|Ω|-|
|Transconductance|_g_fs|-|69|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=32A|



> 1) See Diagram 3 for more detailed information 

> 2) See Diagram 13 for more detailed information 3) Defined by design. Not subject to production test. 

Final Data Sheet 

3 

Rev.�2.1,��2019-09-02 

**OptiMOS[TM�] 5�Power-Transistor,�80�V IPA052N08NM5S** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|2900|3800|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Output capacitance|_C_oss|-|490|-|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|23|-|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|17|-|ns|_V_DD=40V,_V_GS=10V,_I_D=32A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|7|-|ns|_V_DD=40V,_V_GS=10V,_I_D=32A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|27|-|ns|_V_DD=40V,_V_GS=10V,_I_D=32A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|7|-|ns|_V_DD=40V,_V_GS=10V,_I_D=32A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|14|-|nC|_V_DD=40V,_I_D=32A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|9|-|nC|_V_DD=40V,_I_D=32A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|9|-|nC|_V_DD=40V,_I_D=32A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|14|-|nC|_V_DD=40V,_I_D=32A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|42|56|nC|_V_DD=40V,_I_D=32A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.6|-|V|_V_DD=40V,_I_D=32A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|36|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge|_Q_oss|-|51|-|nC|_V_DD=40V,_V_GS=0V|



## **Table�7�����Reverse�diode** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|37|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|256|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.88|1.2|V|_V_GS=0V,_I_F=32A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|56|-|ns|_V_R=40V,_I_F=32A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|92|-|nC|_V_R=40V,_I_F=32A,d_i_F/d_t_=100A/µs|



> 1) Defined by design. Not subject to production test. 

> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet 

Rev.�2.1,��2019-09-02 

4 

**OptiMOS IPA052N08NM5S** 

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40 ee ee ee 70 er<br>35<br>60<br>30<br>50<br>SeNEe ee a es ee<br>25 PFre| | NE J fff 40 NNa Ee seee<br>a eee ee NG<br>20<br>a2 seee<br>30<br>$$ \ a<br>15 pf a a esee<br>20<br>10<br>Py St fp<br>5 aeetfee eePY KRGeee 10 S a a seOWee ee |<br>0 pf | | ld] lr] TN 0 a<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C Pc] T C PC]<br>a P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br>


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10 [3] 10 [1]<br>single pulse<br>A OO OO 0 0.01<br>S SS 1 µs ot i 0.02 et<br>10 [2] 10 µs 0.05<br>a SS | 0.1 to<br>0.2<br>= a ae I eeeeeteer<br>1 ms 100 µs 0.5<br>10 ms<br>10 [1] Z NNTitNOUN 10 [0] TM | |||<br>A SCNT | Sr TTT<br>PA ONO ON Cerra<br>moO2 10 [0] OTT Berri | Deeg CnC<br>NNN a 0:<br>DC<br>EE NE mer TMLee eA | IM IM LT<br>poa eeemNINEst TT eAHi } VW<br>10 [-1] NN || 10 [-1] YIN ELI TIME IN<br>EEN Cenc rc<br>10 [-2]<br>eS | 7Cee<br>=e LAINIE UIE TINT TUTTE ETE CATT<br>i i<br>ee Il<br>10 [-3] 10 [-2]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>V DS M t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

5 

**OptiMOS IPA052N08NM5S** 

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280 LTT TTT TAATA TT Pe et 14 Be se eee<br>SS 10 V 8 V eee 7 V Be Se 4.5 V eee<br>240 ftLT ti TAAL/ A. tfoT PT teeeT ETef pp 12 RRRVi BREEPERTEE<br>BREE E/ see ALTE TTT eT Tt te ET<br>5 V<br>LTTBREED TT AATieeeTP TT EEPietTTT PTT yr Pe [ee]  EEEen e neee<br>200 6 V 10<br>Se eee LITT TTT TTATT TTT TTT et ty<br>LT TT TAT TT ET eT ET ET LITT TTT TY Te tt [eee]<br>BEES) eRe eee PIT TTT TYE TTT Tt et te<br>SEED // S08? ==. eee BERRAe<br>160 8<br>= TTT TWA TAT TT TE EEE ET EE TT TT EEE EEE 6 V | HE<br><x LT IT TTA eeUPLEE eerie ttT TTT te eTt e teete eee e e e ET<br>LT TWAT TT tT PT ET ET Piette TT ete te tt er |<br>120 LT TAYE TT Tt eT eT TT 6 aa eet 7 V<br>LT IAT TT TT ET PT PT PT TT ET tT ee eee i<br>8 V<br>LT AAT TP PT PT PT EP ====a<br>Be) / ARERR eee EFSOSS<br>80 4<br>| yA +t te t+ + 5 V LETT tT TTT TT tte et ee et ee ty 10 V 7<br>BYARBRE PLETE EE EER RR TATA<br>BY SSR Lit TTT TTT eee ee ee ee et ee<br>Df SSeS = eee LITT TTT TET Tete ee ete te ee ty<br>40 2 S28Ree 2 LTT T TTT TT Tet Tee ee tt eee ey<br>IAAT TT FETT Tre Peete te ee [eee]<br>(= 4.5 V PET TTT TTT ete tee tee ee ee<br>pester T TTT tt} tt tT Tt tT TT PET TTT TTT ete tee tee ee ee<br>0 ARERR eee 0 PITT TT TTT Tite tT ere ee eee eee ee 7<br>0 1 2 3 4 5 0 20 40 60 80 100 120 140<br>V DS [V] I D [A]<br>I D=f( V DS ), T j =25 °C; parameter: V GS R DS(on)=f( I D ), T j =25 °C; parameter: V GS<br>Diagram 7: Typ. transfer characteristics Diagram 8: Typ. drain-source on resistance<br>280 LITT TTT Tit Tt tte ete ey 14 Bee eee<br>LITT TTT Tite te tee eee ee rite tT eee ee et AP ee et<br>LTT TTT TTT tte tte eet eee Pitt Tete tee ey ay Pe tT<br>240 LTT TET TTT eye te ey Te ET 12 LTT TTT ET eT ee aA Et TE tT<br>Lite TTT Tete ee te eee Pie eee ee eet eT AE Te<br>Li TTT TT Tie ee te et et ee ve rite te tee tee eT ae A Ee et te<br>LITT TTT TT ieee te et et ee Tg rite tye ee tee eT a IN ET ep ee te<br>200 LITT TTT Tete ete et et et rr TT 10 Piette tee tet et ay PIN Tt eT Te<br>LITTLTT TET TTT TTTTTT TTTte ttteeet etEy eetTe eTyt RELTT TT ttt tT tT ty et ty |SEE,PAR 175 °C<br>BERR ee Piette ee ee eT Aee<br>160 LITT TT TT Tie eet ee et et ee TT 8 rite tee eee eT ey Pe et et et<br>= LITT TTT Tie ee ee ee et et vA TTT 5 Fite tye tee ee ee eye ee et<br><x LTT TTT TTT Tee ye eee ee ee ev | rite te tee ee ee eT Pe<br>LT TT TTT TTT Te ttt eet ete fy tT rite Tete tee ey PINT Pe ee tT<br>120 BER ERR) ee 6 LTT TTT Ete eT eee eT NE ET EE Ey<br>BEER Ae Piette eee ee ee PP PN<br>BREE eee LT ttt tt tt tT tt tt tt PT tt<br>LTT TTT TTT eee ee eee ve tT BRR<br>80 4 — =<br>LTT TTLTT  TTT ieee te ee era tT Piette tee ee ee ee et et et 25 °C<br>LTT TT TT TTTT T TTT  tttTe eT teeTTetTAP yt TTty ty RELTT TTT eee eee eye ey EHHEy |_|<br>BERR / eee Pitt eee eee ee ee ee ee ee ee<br>40 175 °C 2<br>PETLT TTEETTT EEE yt EtyERRyy TLEITAA TTT Ty PiettePiette teetee eeee eeee eeet etet eeet ee<br>25 °C<br>PLETELT TTT TTTEEE ittEE ERRRTt yt tT AyWAL| LTALT Ty yy ritePitt tTtye etetee eetee eeee ee etet et etee eeet<br>0 LUT TT Te Pe rT IT TT TT TT TTT 0 LTE TTT ETT ey eee eT ye ee eT ee TY<br>0 1 2 3 4 5 6 7 0 2 4 6 8 10<br>V GS IV] V GS IV]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

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**----- Start of picture text -----**<br>
OptiMOS<br>™ 5 Power-Transistor, 80 V Cinfi neon<br>IPA052N08NM5S<br>2.0 4.0<br>PETE EEE PTT ELLE TELLELLE<br>PTET TTT TTT TTT TTT TT TT TTT<br>PETTY 3.5 wi<br>PCCeEeCCe / PASE<br>1.6<br>eee -TAN<br>3.0<br>PessHdBETEOOGHAGt6cGattt<br>fs)» Z CSOs MM TOGOMHTEDGSUaSCHCOOMITNS<br>2.5<br>nN 1.2 PETE TIT TTT TAAy,  EEE THT PP SENETNUN<br>5Sag LITATs te 2.0 “> S<br>seeeereeececCeeeeeeeeeettteeA THNNI 650 µA<br>c 0.8 uae<br>Sere 1.5 PEELE<br>& EEE EEE NT 65 µA<br>ee eee|e EEE EEE SPP<br>1.0<br>Sib eetesssanasteasssitent<br>0.4<br>PETPETE TTT TTEEETTT EEEEEE EEE EEEesos MMM 0.5  UUGGGGTITPSPP T TTCOOGTIT T TTTOGGEE<br>PELE EEE<br>PCC PETE EEE<br>0.0 0.0<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>GS(th)<br>V<br>R<br>**----- End of picture text -----**<br>


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10 [4] 10 [3]<br>Pey{{[itifyf++;a +t lll e 25 °C ace s ee<br>25 °C, max<br>r [|| [| TT{[ [TT[| J| fT| [TT tT| ft| tT[ tT— tT| Jfyt [tTJT f Li 175 °C ERErT TTTEEETT ETT tT ttt ey ty yy<br>PF SS S U 175 °C, max tertesssttteencs<br>Ciss<br>Sune POOP<br>GneSUAn<br>10 [3] 10 [2]<br>ft tt UU ee<br>RA TAARA ON A G AMA<br>ac RSIKE | fT 4tT 4ft NSyt | es = FREERB E EEEEERR,<br>& NSC Coss =< LET TTT [TTT] AL 2aeet4a<br>10 [2] 10 [1]<br>at Nt |<br>YP|p++|| tT| +TT| TT| NTAt tTTT tT| fTft tT| tTtT tTtT fTft tTtT Tt]tf SRFREESee EEE EEEEEEee beeeeEEE 4<br>ee COO<br>pt tT TT | AAA ET TT PUTT<br>PEER Crss Pf Pe<br>10 [1] 10 [0]<br>0 10 20 30 40 50 60 70 80 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS [V] V SD wal<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

**OptiMOS IPA052N08NM5S** 

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**----- Start of picture text -----**<br>
10 [2] 10<br>——— = — ee ee PE STLE LL<br>——PN re | 16 V40 V PEELE LEEEL EEL LET VF”<br>64 V<br>K—_| X | EERE EEE Ae<br>NE 1CTIN| TPN) fTEP ONT SSTIE TT L === P oco ooo /,AAT<br>8<br>NG Na lll CCE CECEEACLE<br>CTPSST TEN FEEEEEECEEEEC CECE<br>10 [1]<br>——pTa a ee NTPRMUSATTITNNT 25 °C J | 6 FRSSEESSHEESESBeeLT ETT TTT TTT AA Aorg Treee<br>= pF} ft Ett tN NE BE Ae<br><x || TT TE PN ENT => COO eeee ee<br>100 °C<br>4<br>FATT NTT FREERSUegUaGUSeEREUEE5s E EE<br>10 [0] AN——soeee LLIN——seee NUIT! BREE?segue)ARERR<br>a 150 °C<br>aeee eee 2 BeAe<br>| SAL<br>LEU AGREE EEEEEE<br>10 [-1] 0<br>LITIIE ELE) } ARBEREEEEEEREEREE<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω ; parameter: T j,start V GS=f( Q gate ), I D =64A pulsed, T j =25 °C; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Diagram Gate charge waveforms<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
88 LTT TTT TTT tT eet tt ee ee ey ty oy<br>LTT TTT Tt ete ete et et ee eee et<br>LTT TTT TT eee ee yt tt ye ee ee To<br>LTT TTT Tt ete ete et et ee eee et<br>86 LTTLTT TTT TTT TTTTPE t tTteeee ee eee eett eeeT TeePT ET ETre 7<br>LTT TTT TTT tee ee ee ee EE Aye<br>LTT TTT Tt tT tT eet tt yee et Ay et<br>LTT TT TTP tty eet tt ee Ayer<br>84 LTTLTT TTTTTT TTTT tteety etteet yt ytttyt yetet PyPAA Ttet<br>Se ae<br>Ss SeeLTT TTT TTT tT ttt itt Pye aeeee eT TY<br>82 TTTLTT TTTTT TT TTTTT ttttT tttteetteA ry eettTt<br>LTT TTT TTT TTT AyAT ye ee et<br>LTT TTT TTT tT tt ray et ee et<br>Se Ae<br>80 SRRLTT TTT TT PTAAeTT tt ye ee et<br>LTT TT TTT tt te ee et<br>LTT TT TT yt Tt eet eee eT Pe TT<br>LTT TTT TAT TTT tt tt ee eee et<br>BRR4<br>78 LTT T TAT TTT TTT et ee tT Te TT TI<br>BRPEEC EEE EEE EE EEE EEE EEE<br>LTT  4eee<br>76 LTT TT T TTEEPEety eteTey ettT tty teetreyeeeee eyeett 7<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**OptiMOS[TM�] 5�Power-Transistor,�80�V IPA052N08NM5S** 

**==> picture [120 x 53] intentionally omitted <==**

## **5�����Package�Outlines** 

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**----- Start of picture text -----**<br>
1 2 3<br>MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>DOCUMENT NO.<br>A 4.50 4.90<br>Z8B00181328<br>A1 2.34 2.80<br>A2 2.42 2.86 REVISION<br>b 0.65 0.90 03<br>b1 0.95 1.38 ISSUE DATE<br>b2 1.20 1.50 23.07.2018<br>b3 0.65 1.38<br>b4 1.20 1.50 SCALE 5:1<br>c 0.40 0.63<br>D 15.67 16.15 0 1 2 3 4 5mm<br>D1 8.97 9.83<br>E 10.00 10.65<br>e 2.54<br>EUROPEAN PROJECTION<br>H 28.70 29.75<br>L 12.78 13.75<br>L1 2.83 3.45<br>øP 3.00 3.38<br>Q 3.15 3.50<br>**----- End of picture text -----**<br>


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**Figure�1�����Outline�PG-TO�220�FullPAK,�dimensions�in�mm/inches** 

Final Data Sheet 

9 

Rev.�2.1,��2019-09-02 

**OptiMOS** 5 **IPA052N08NM5S** 

## IPA052N08NM5S 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2019-07-16|Release of final version|
|2.1|2019-09-02|Update package outline|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

10 



## Links

- [View this product on Novapart](https://novapart.co/products/IPA052N08NM5SXKSA1/power-mosfet-n-channel-80-v-64-a-4600-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipa052n08nm5sxksa1/mosfet-n-ch-80v-64a-to-220fp/dp/3577341)
---

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