# Power MOSFET, N Channel, 80 V, 75 A, 3400 µohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:3577337/)

**URL**: https://novapart.co/products/IPA040N08NM5SXKSA1/power-mosfet-n-channel-80-v-75-a-3400-ohm-to-220fp
**SKU**: IPA040N08NM5SXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.9000
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 |
| Qualification | - |
| Power Dissipation | 39W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 75A |
| Drain Source On State Resistance | 3400µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3577337/)

**IPA040N08NM5S** 

## **MOSFET** 

## **OptiMOS** 

## **Features** 

_R_ DS(on) R DS(on) 

|**Parameter**<br>~~Table1~~<br>~~KeyPerformance~~|**Value**<br>~~PerformanceParameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS<br>~~Table 1~~<br>~~Key Performance~~|80<br>~~Performance Parameters~~|V<br>~~Parameters~~|
|_R_DS(on),max|4.0|mΩ|
|_I_D|75|A|
|_Q_oss|83|nC|
|_Q_G(0V..10V)|70|nC|



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**----- Start of picture text -----**<br>
Drain<br>Pin 2<br>Gate<br>Pin 1<br>io<br>Source<br>Pin 3<br>**----- End of picture text -----**<br>


|~~Type/OrderingCode|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~|
|---|---|---|---|
|IPA040N08NM5S<br>~~Type/OrderingCode |~~|PG-TO 220 FullPAK<br>~~|~~<br>~~|~~|040N085S|-<br>~~Related Links~~|



Final Data Sheet 

1 

**OptiMOS[TM�] 5�Power-Transistor,�80�V IPA040N08NM5S** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 

Final Data Sheet 

2 

Rev.�2.1,��2019-09-02 

**OptiMOS[TM�] 5�Power-Transistor,�80�V IPA040N08NM5S** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-|-<br>-|75<br>53|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C|
|Pulsed drain current1)|_I_D,pulse|-|-|300|A|_T_C=25°C|
|Avalanche energy, single pulse2)|_E_AS|-|-|186|mJ|_I_D=75A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|39|W|_T_C=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|3.8|°C/W|-|



## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|80|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.2|3.0|3.8|V|_V_DS=_V_GS,_I_D=109µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=80V,_V_GS=0V,_T_j=25°C<br>_V_DS=80V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|1|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|3.4<br>4.2|4.0<br>-|mΩ|_V_GS=10V,_I_D=38A<br>_V_GS=6V,_I_D=19A|
|Gate resistance3)|_R_G|-|1.5|-|Ω|-|
|Transconductance|_g_fs|-|93|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=38A|



> 1) See Diagram 3 for more detailed information 

> 2) See Diagram 13 for more detailed information 3) Defined by design. Not subject to production test. 

Final Data Sheet 

3 

Rev.�2.1,��2019-09-02 

**OptiMOS[TM�] 5�Power-Transistor,�80�V IPA040N08NM5S** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|4900|6400|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Output capacitance|_C_oss|-|790|-|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|36|-|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|18|-|ns|_V_DD=40V,_V_GS=10V,_I_D=38A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|12|-|ns|_V_DD=40V,_V_GS=10V,_I_D=38A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|37|-|ns|_V_DD=40V,_V_GS=10V,_I_D=38A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|12|-|ns|_V_DD=40V,_V_GS=10V,_I_D=38A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|22|-|nC|_V_DD=40V,_I_D=38A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|15|-|nC|_V_DD=40V,_I_D=38A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|15|-|nC|_V_DD=40V,_I_D=38A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|22|-|nC|_V_DD=40V,_I_D=38A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|70|93|nC|_V_DD=40V,_I_D=38A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.5|-|V|_V_DD=40V,_I_D=38A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|60|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge|_Q_oss|-|83|-|nC|_V_DD=40V,_V_GS=0V|



## **Table�7�����Reverse�diode** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|33|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|300|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.87|1.2|V|_V_GS=0V,_I_F=38A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|73|-|ns|_V_R=40V,_I_F=38A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|166|-|nC|_V_R=40V,_I_F=38A,d_i_F/d_t_=100A/µs|



> 1) Defined by design. Not subject to production test. 

> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet 

Rev.�2.1,��2019-09-02 

4 

## **OptiMOS**[80][ V] ™[5][ Power-Transistor,] **IPA040N08NM5S** 

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40 Pas ee 80 ee ee ee ee<br>35 Po [XT ft tt 70 PF oIXd<br>PF | N fT | ft | P|; KE | | |<br>30 P| AT | ff | ll 60 Po; TN | ft |<br>25 | | | \ | | | 50 Ft | | KR] fT<br>Ss ee ee eeOe ee Ne<br>= ee<br>20 P| | | Ke] 40 ee eee<br>ee ee ee ee<br>15 30<br>ee ee ee<br>10 Po EE 20 Pot; |TT<br>5 ee ee ee 10 P| | tf | |<br>0 Pp | | hE TN 0 ee eeeeeee<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C [°C] T C [°C]<br>G P tot=f( T C) O I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br>


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10 [3] 10 [1]<br>single pulse<br>0.01<br>aS 1 µs 1 0.02 CECT<br>10 [2] 10 µs 0.05<br>R ENN! i 0.1 A a<br>SN NN l 0.2 ei<br>1 ms 100 µs 0.5<br>10 ms<br>S E TT Cee | | Ill<br>10 [1] 10 [0] “Tamcco erm l<br>A N NANSn | Sa a l aeIll<br>_i 10 [0] INEa SNNE EEN aesaA<br>DC<br>= || S aA<br> SESE NEE Leetttit | URAC LUE TTI TUT<br>EEN | LUIS<br>10 [-1] 10 [-1] UTNE TNE<br>a cMCCT<br>10 [-2]<br>| || 720 |<br>=eEE VAINIIETE CETTE LETT<br>eea A A<br>10 [-3] 10 [-2]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>V DS IV] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

5 

**OptiMOS IPA040N08NM5S** 

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300 |[|||| |Itt 10 V ty 8 V WeyPTPTttTTTPTTttTteeete tteeeeetteteetttettTTetTtte |<br>250 KH 7 V | 6 V<br>BEER!BEES) // 2D 2aaeeee<br>Lt tt ee 7 TT TT<br>BERD iP ARR<br>LTT Tae AL TT TT TT<br>200 BEE! | eee<br>Lt tT a AT TT TT<br>Lt | Way TE<br>Lt Tey Tt tT<br>= BEY (SRR<br><= 150 BE MER<br>BE (ARR eee<br>Be) / ARR<br>EeEe[MERE/RRR<br>100 BYARR<br>BySRR<br>f Seeee<br>5 V<br>[Wiz | tt eT ET ET<br>@ PARR<br>50 2 PERE<br>F ARR<br>Dee<br>4.5 V<br>|WT te Ee ee Ee<br>| PRE<br>0 AER EEE<br>0 1 2 3 4 5<br>V DS [V]<br>I D=f( V DS ), T j =25 °C; parameter: V GS<br>I D<br>**----- End of picture text -----**<br>


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300 LTTLTT TT TTT TTT ee eee TT yr 7<br>LTT TTT  tte TTT eee ee e e TTe eeey oT<br>BERR eee<br>250 LTTLTT TTTTTT TeeTT eette ee etTT eTet eeee TTATTTT<br>LTT TTT Tete ee et te eee ee fT<br>LTT TTT TTT eee ee ee TT a<br>BERR eee<br>200 LTT TTT TTT eee ee ee TT Tay TT<br>BERR eee<br>LTT TTT TTT eee ee ee TT A TT<br>BERR eee<br>o BRR eee<br><= 150 BERR! Pe<br>LTT TTT Tt ete ee et te Te ee<br>LTT TTT TTT eee ee ee TTP Te<br>BERR RRR Pee<br>LTT TTT TTT eee ee ee TT rT<br>100 BERR BERR Peeeeeeee<br>LTT TTT Te tee eee yt tt TAs] Te<br>LTT TTT TTT ttt ee ee ee tt<br>50 LTT TTT Tt ete eee et tt TAA TT<br>175 °C<br>eePT eee eet et et ty IAAL TT tT tt<br>25 °C<br>Se ee<br>LTT TTT Tt eet tt TY oT LT ttt ty<br>0 BER ae<br>0 1 2 3 4 5 6 7<br>V GS IV]<br>I D=f( V GS ) | V DS|>2| I D| R DS(on)max ; parameter: T j<br>I D<br>**----- End of picture text -----**<br>


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12 BREE BER eee<br>BREE PER eee<br>BRE PRBee<br>10 BEE 4.5 V ee Pee<br>fhees LETT| ___}f{____| ttt ye eee_________ ee eT<br>BEE? GRReee<br>EE 5 V eee<br>BEDAER ieee<br>8 rTAT TT Pee ee epee ET<br>IA TT ITE TTT TT eT ye et ey ey ey ey ey Ty<br><2 eee<br>BERR eee<br>£ LTT TIT TTT TTT PA eT TT<br>= 6 SERAe<br>[TTT pp pert tT TTT TT eT eT eT ey Ty ey Ty<br>eet TT ET ET ET ET ET<br>6 V<br>PETELTT TTTE EEETT ttEEETtA aEEE EE EEE CTT<br>4 Seer 7 V<br>————— 8 V<br>————FERRE EEE Eee 10 V<br>LTT TTT Tete eee eee ee ee eT<br>2 PETE TTT TT TT eye ey ey ey ey ey Ey eT<br>LTT TTT TTT TT ee ee ey ey ey ey ey<br>LETT TTT TT TT TT eye ey ey ey ey ee ey<br>LETT TTT eT TT ee ee ey ey ey ey ey<br>LETT TTT TT TT TT eye ey ey ey ey ee ey<br>0 TILT TTT TET iT it ite tee ey ee ee ee eT 7<br>0 25 50 75 100 125 150<br>I D [A]<br>R DS(on)=f( I D ), T j =25 °C; parameter: V GS<br>Diagram 8: Typ. drain-source on resistance<br>12 SER | Pee<br>S elR Pee<br>SEReee<br>10 ReeSER PeePee<br>SRR Vee<br>SER eee<br>SRR<br>8 eee ANeee e<br>SRR Pee<br>Ltt ttt ttt tty yy | PAT PT eT<br>PT PTT Te tee ee PPT ANE TTT<br>£ A 175 °C<br>= 6 LT tet tte tte te tt yy te ty a<br>PT yet te ee et A PP te<br>SER eee<br>LTT tT Tt ttt tty PAT EP tT et Pe ee tt<br>PT eee eee eee ee eA eT ee tt ey Ty<br>4 Ree eee<br>25 °C<br>PETEptt t EteeEE EEee te te ee tt ee rp CoSHER<br>PFT ieee eee te te eee te<br>LT ttt tte ee tee ee te tt tt ey to<br>2 PTSeePteTeteteeteeeeeeete eeee eeee eeeeeeeee<br>LT ett eee eee ee et et ee<br>Pte tee ee ee ee ee ee ee<br>0 TTT TTT TPT tte tt tt te ee tt PT eT TT<br>0 2 4 6 8 10<br>V GS IV]<br>R DS(on)=f( V GS ), I D =38 A; parameter: T j<br>] Ω<br>DS(on)<br>R<br>] Ω<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

**OptiMOS** ™ 5 Power-Transistor, 80 V **IPA040N08NM5S** 

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2.0 4.0<br>PCEECELEEEELEEEE EE THT<br>3.5<br>CCHSOG EHHEEeAee“ | (URC ALANOLEEEE EEL<br>1.6<br>0RRRGERRSRSROEEDZG00EE SN<br>3.0<br>PessHdBEPEGOGHAGt<br>egSo 67A-CA0tt GOO MM TEGGMHTODGNLSSMa CUCOOMTE<br>2.5<br>Se 1.2 LRRUUUEREREEREDD? QUOUUUEEEEES OGRAAAOOODUSEERDSUDSCOHUONUEE<br>2 GAs SOA GERAEEAUEEEEUDXSGDSCHRIEE<br>COCeeeeeeeea ees de Senne<br>2.0<br>POSSS |  BN\ 1090 µA<br>0.8<br>6 ee 1.5 ALLELE EEL EEN EE<br>109 µA<br>2 PCAC SAGE AGEHUERAGEAGEAUEELEROE<br>€ CO<br>1.0<br>Sib eetesssanasteasssitent<br>0.4<br>PEE esos MMM UUGGGGTIT T TTCOOGTIT T TTTOGGEE<br>PCELEELELELELLELELELLELELTET TE ETEE EEEEEEEEE EL 0.5 PEEE EEE EET<br>PCEEECECEEEEEECELELEELEL<br>0.0 FCCEECCCELECEL 0.0 ALLELEEL EEL LEE E E E<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>GS(th)<br>V<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [4] 10 [3]<br>=== === ======= E 25 °C ES<br>25 °C, max<br>Ciss 175 °C<br>= == -—_-__=—— [| S U 175 °C, max EREtertessitttteeceeEEE<br>psf ft | Pt tt tt tt \ HEE<br>10 [3] COO | 10 [2] e T<br>SERED NCEEEEEEELE U e  A<br>Coss<br>ac PrASEINE [| -T tT yt y tTeeeyyy _ LTTFERRERTTT  EEEEEET TTEERETTT ESEYEA ERTT 4eP es<br>& BERNESESeNESSEeeeeeeeeee <x BRRAe See<br>FUN EELLLEE REESE ELLE PLLTELLa ETT<br>10 [2] 10 [1]<br>SSS SSS SSS SSS SSS BEREEGE E REEEEREESE E ES<br>retSe[ | | | [TNE TT tT tT yt tT ft FEEEEESEREEE EEREee |eeeee|<br>eee ~S eee LITT ETT TTT TAT Ta TT ET ETT<br>PT {et | et EE Crss eee HE I<br>PELE EEL EEL ELLE FEET<br>10 [1] 10 [0]<br>0 10 20 30 40 50 60 70 80 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS [V] V SD wal<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

**OptiMOS IPA040N08NM5S** 

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**----- Start of picture text -----**<br>
10 [2] FEEese 10 Femmes 1 16 V40 V ri;8 ls| |se[ | | | 7,[| [fwvl fl<br>a NS 25 °C i 64 V e s ee e/a<br>8<br>SESS TH STH 7 ,<br>ES S| SH a C A<br>10 [1]<br>TIN, LIN, PX S00000800" Geeeee<br>FE SEH nan Ue<br>a eS ee eee 6 /|<br>a Se~ N |} i | | | [| dT dh yAwe tT tr TT<br>7 p—_t ot tty tt St tt 100 °C Ss a ee eeeee<br>LSNX n e O e<br>4<br>10 [0] ptnN 150 °C | GE ER A Se<br>YTarTSS TETTT TTTTT TTTTTT | 2 eeeeCOREE| | | 2|J7| | | | | | eee| | | fTeeefT ft<br>0 SA<br>10 [-1] LUAEUAN EE) 0 YiARERR ttt i} {tt ttt tt ft ft<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50 60 70 80<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω  ; parameter: T j,start V GS=f( Q gate ), I D =38A pulsed, T j =25 °C; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br>


## **Diagram Gate charge waveforms** 

**==> picture [259 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
88 Li TTT TT TT eT eee ett yey et eT eT ey of<br>Lit iTTT TT Tt tt ttt tte yet yt te ty tT<br>LT TTT TT ET ete eee ete et yey ee tT ety Ty<br>Lit iTTT TT Tt tt ttt tte yet yt te ty tT<br>86 LTT TTLi iT TT TTITTT Tittet tttT ttt ttettt ee tttttttt Tee tty ot<br>LTT TT TTT ttt ttt tet tt tt tye<br>LT TTT TT ET ete ee ett ey ett Pee ft<br>Lit TTT TT TET ttt ttt ett yt Tyee tt<br>84 LTTLit TTT TTT TTTETTit ete ttte eT ttt ett eyeeT TyeeTyee eyte tttt<br>LTT TTT TET ett e ete tte Tye et ty ty<br>Ss= L iiTTT TT  TTIT TTTTT t Ttt  t tt titt ttyPyeyet eeetyeTtTTY<br>82 LiLTTTLTT TT TTTTT ITTtetiTtt tt tittyrT Ayr tttett tt tT<br>LTT TTT TTT iE Tt tery et ey et tt ee ey tt<br>LiTTT TTI Ti tT ti yt ttt ttt tt ey tt<br>BREE 4<br>80 LiTTTIT TT IT tT Tt tte yt yt Ey tT<br>BERR4<br>Li TTIT TTI TATTLE TT TTT Tt yt yt ee ty tT<br>LTT TT TIT TAT Tt et ET<br>LiLTTI TI“ TET TTT TTT tT ttt tt ty tf<br>78 LTTLTT TTT TATTy TTTTT TT TtTTT et eeee tTTETe TT TI<br>EEC EEE EEE EE EEE EEE EEE<br>BEEP [4E] Ree<br>Li iT TTT Tt Tt ttt tt tte tT et yt tt ty tT<br>76 LET TT TE ET ET ey tit tT ttt yt ttt it tt<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**OptiMOS[TM�] 5�Power-Transistor,�80�V IPA040N08NM5S** 

**==> picture [120 x 53] intentionally omitted <==**

## **5�����Package�Outlines** 

**==> picture [386 x 610] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 2 3<br>MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>DOCUMENT NO.<br>A 4.50 4.90<br>Z8B00181328<br>A1 2.34 2.80<br>A2 2.42 2.86 REVISION<br>b 0.65 0.90 03<br>b1 0.95 1.38 ISSUE DATE<br>b2 1.20 1.50 23.07.2018<br>b3 0.65 1.38<br>b4 1.20 1.50 SCALE 5:1<br>c 0.40 0.63<br>D 15.67 16.15 0 1 2 3 4 5mm<br>D1 8.97 9.83<br>E 10.00 10.65<br>e 2.54<br>EUROPEAN PROJECTION<br>H 28.70 29.75<br>L 12.78 13.75<br>L1 2.83 3.45<br>øP 3.00 3.38<br>Q 3.15 3.50<br>**----- End of picture text -----**<br>


**==> picture [34 x 43] intentionally omitted <==**

**Figure�1�����Outline�PG-TO�220�FullPAK,�dimensions�in�mm/inches** 

Final Data Sheet 

9 

Rev.�2.1,��2019-09-02 

**OptiMOS** 5 **IPA040N08NM5S** 

## IPA040N08NM5S 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2019-07-23|Release of final version|
|2.1|2019-09-02|Update package outline|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

10 



## Links

- [View this product on Novapart](https://novapart.co/products/IPA040N08NM5SXKSA1/power-mosfet-n-channel-80-v-75-a-3400-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipa040n08nm5sxksa1/mosfet-n-ch-80v-75a-to-220fp/dp/3577337)
---

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