# Power MOSFET, N Channel, 60 V, 84 A, 2900 µohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:3227624/)

**URL**: https://novapart.co/products/IPA029N06NXKSA1/power-mosfet-n-channel-60-v-84-a-2900-ohm-to-220fp
**SKU**: IPA029N06NXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0900
**Stock**: 200+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 |
| Qualification | - |
| Power Dissipation | 38W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 84A |
| Drain Source On State Resistance | 2900µohm |
| Gate Source Threshold Voltage Max | 2.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3227624/)

## MOSFET 

**OptiMOS[TM]** OptiMOS[TM] IPA029N06N 

Final 

## **OptiMOS[TM]** Power-Transistor, IPA029N06N 60 V 

|1<br>Description|Description|Description|Description||||||TO-220-FP|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Features**||||||||||||||
|* Optimized for|high performance||||SMP%S, e.g.|sync. rec.||||||||
|* 100% avalanche||tested||||||||||||
|¢ Superior thermal||resistance||||||||||||
|¢ N-channel||||||||||||||
|* Qualified according to JEDEC||||1)|for target applications|||||||||
|¢ Pb-free lead|plating;||ROHS compliant|||||||||||
|¢ Halogen-free|according to IEC61249-2-21|||||||194||||||
|||||||||||||||
|Table<br>1<br>Key||Performance Parameters||||||||||||
|**Parameter**|||**Value**|||**Unit**|||||Drain<br>Pin 2|||
|_V_DS|||60|||V||||||||
|_R_DS(on),max|||2.9|||mΩ|||Gate<br>Pin 1|||||
|_I_D|||84|||A|||||Source|||
|_Q_OSS|||65|||nC|||||Pin 3|||
|_Q_G(0V..10V)|||56|||nC||||||||



## **Features** 

||**Package**|**Marking**||
|---|---|---|---|
|IPA029N06N|PG-TO220-FP|029N06N|-|



1) J-STD20 and JESD22 

Final Data Sheet 

2 

IPA029N06N 

**==> picture [146 x 65] intentionally omitted <==**

## **OptiMOS[TM] �Power-Transistor,�60�V** 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

3 

Rev.�2.2,��2015-04-09 

**OptiMOS[TM] �Power-Transistor,�60�V** 

IPA029N06N 

**==> picture [146 x 65] intentionally omitted <==**

**2�����Maximum�ratings** at� _T_ j�=�25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-|-<br>-|84<br>59|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C|
|Pulsed drain current1)|_ID,pulse_|-|-|336|A|_T_C=25°C|
|Avalanche energy, single pulse2)|_E_AS|-|-|140|mJ|_I_D=84A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|38|W|_T_C=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category;<br>DIN IEC 68-1: 55/175/56|



## **3�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|2.9|3.9|K/W|-|



## **4�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|60|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.1|2.8|3.3|V|_V_DS=_V_GS,_I_D=75µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=60V,_V_GS=0V,_T_j=25°C<br>_V_DS=60V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|2.6<br>3.0|2.9<br>3.5|mΩ|_V_GS=10V,_I_D=84A<br>_V_GS=6V,_I_D=21A|
|Gate resistance3)|_R_G|0.65|1.3|1.95|Ω|-|
|Transconductance|_g_fs|75|150|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=84A|



> 1) See figure 3 for more detailed information 

2) See figure 13 for more detailed information 

> 3) Defined by design. Not subject to production test 

Final Data Sheet 

Rev.�2.2,��2015-04-09 

4 

**OptiMOS[TM] �Power-Transistor,�60�V** 

IPA029N06N 

**==> picture [146 x 65] intentionally omitted <==**

## **Table�5�����Dynamic�characteristics[1)]** 

|**Table5Dynamiccharacterist**|**ics1)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|4100|5125|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Output capacitance|_C_oss|-|980|1225|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|39|78|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|16|-|ns|_V_DD=30V,_V_GS=10V,_I_D=84A,<br>_R_G,ext=3Ω|
|Rise time|_t_r|-|15|-|ns|_V_DD=30V,_V_GS=10V,_I_D=84A,<br>_R_G,ext=3Ω|
|Turn-off delay time|_t_d(off)|-|30|-|ns|_V_DD=30V,_V_GS=10V,_I_D=84A,<br>_R_G,ext=3Ω|
|Fall time|_t_f|-|11|-|ns|_V_DD=30V,_V_GS=10V,_I_D=84A,<br>_R_G,ext=3Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|19|-|nC|_V_DD=30V,_I_D=84A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|11|-|nC|_V_DD=30V,_I_D=84A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|10|15|nC|_V_DD=30V,_I_D=84A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|18|-|nC|_V_DD=30V,_I_D=84A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|56|66|nC|_V_DD=30V,_I_D=84A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.7|-|V|_V_DD=30V,_I_D=84A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|49|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|65|82|nC|_V_DD=30V,_V_GS=0V|



## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|32|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|336|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.85|1.2|V|_V_GS=0V,_I_F=32A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|36|58|ns|_V_R=30V,_I_F=32A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|31|-|nC|_V_R=30V,_I_F=32A,d_i_F/d_t_=100A/µs|



> 1) Defined by design. Not subject to production test 

> 2) See ″ Gate charge waveforms ″ for parameter definition 

Final Data Sheet 

Rev.�2.2,��2015-04-09 

5 

Power-Transistor, IPA029N06N 60 V 

**OptiMOS[TM]** 

**==> picture [539 x 599] intentionally omitted <==**

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Final Data Sheet 

6 

Power-Transistor, IPA029N06N 60 V 

## **OptiMOS[TM]** 

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Final Data Sheet 

7 

Power-Transistor, IPA029N06N 60 V 

## **OptiMOS[TM]** 

## IPA029N06N 

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Final Data Sheet 

8 

## **OptiMOS[TM]** 

## Power-Transistor, IPA029N06N 60 V 

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TOO Gate charge waveforms 

**==> picture [259 x 265] intentionally omitted <==**

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Final Data Sheet 

9 

60V IPA029N06N 

**OptiMOS[TM]** 

Final Data Sheet 

10 

Power-Transistor, IPA029N06N 60 V 

## **OptiMOS[TM]** 

IPA029N06N 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.1|2014-06-19|Release of Final Version|
|2.2|2015-04-09|Rev.2.1|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/IPA029N06NXKSA1/power-mosfet-n-channel-60-v-84-a-2900-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipa029n06nxksa1/mosfet-n-ch-60v-175deg-c-38w/dp/3227624)
---

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