# Intelligent Power Module (IPM), IGBT, MOSFET, 600 V, 20 A, 2 kV, DIP, CIPOS Mini

![Product image](https://novapart.co/image/farnell:3373686/)

**URL**: https://novapart.co/products/IM564X6DXKMA1/intelligent-power-module-ipm-igbt-mosfet-600-v-20
**SKU**: IM564X6DXKMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Intelligent Power Modules
**Price**: €9.6800
**Stock**: 200+
**Lead Time**: 204 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Ipm Series | CIPOS Mini |
| Product Range | CIPOS Mini |
| Ipm Case Style | DIP |
| Ipm Power Device | IGBT, MOSFET |
| Isolation Voltage | 2kV |
| Current Rating (Ic / Id) | 20A |
| Voltage Rating (Vces / Vdss) | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3373686/)

**IM564-X6D Datasheet** — 

## **CIPOS™ Mini IM564** 

## **IM564-X6D** 

## **Description** 

The CIPOS™ IM564 product family (PFC-integrated IPM) offers the chance for integrating various power and control components of inverter and single boost PFC stages to increase reliability and optimize PCB size and system cost. It is designed to control three-phase motors in variable speed drives for applications such as airconditioners and pumps. The package concept is specially adapted to power applications, which need good thermal conduction and electrical isolation, but also less EMI and overload protection. To deliver excellent electrical performance, the IM564 product family incorporated Infineon’s leading-edge TRENCHSTOP™ IGBTs, anti-parallel diodes, and an optimized SOI gate driver for three-phase inverter stage, and a CoolMOS™ Power MOSFET and a rapid switching emitter controlled diode for single boost PFC stage. 

## **Features** 

Package 

- Fully isolated Dual In-Line molded module 

- Very low thermal resistance due to DCB substrate 

- Lead-free terminal plating; RoHS compliant 

Inverter 

- TRENCHSTOP™ IGBTs for Inverter 

- Rugged SOI gate driver technology with stability against transient and negative voltage 

- Allowable negative VS potential up to -11 V for signal transmission at VBS = 15 V 

- Integrated bootstrap functionality 

- Over current shutdown 

- Built-in NTC thermistor for temperature monitor 

- Under-voltage lockout at all channels 

- Low-side common emitter 

- Fast track shutdown 

- Cross-conduction prevention 

- All of 6 switches turn off during protection 

## PFC 

- CoolMOS™ Power MOSFET for PFC 

- Rapid switching emitter controlled diode 

## **Potential applications** 

- Air-conditioners, Fans, Pumps, Low power motor drives 

## **Product validation** 

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. 

Please read the Important Notice and Warnings at the end of this document page 1 of 25 

Datasheet 

Verison 2.4 2026-01-26 

**www.infineon.com** 

**CIPOS™ Mini IM564 IM564-X6D** 

**==> picture [103 x 46] intentionally omitted <==**

**Table 1 Product Information** 

|**Base Part Number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Remarks**|
|---|---|---|---|---|
|||**Form**|**MOQ**||
|IM564-X6D|DIP 36x21D|14pcs/Tube|280pcs||



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Datasheet 

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## **CIPOS™ Mini IM564 IM564-X6D Table of Contents** 

**==> picture [103 x 46] intentionally omitted <==**

## **Table of Contents** 

|**IM564-X6D**<br>**Table of Contents**<br>**Table of Contents**|**IM564-X6D**<br>**Table of Contents**<br>**Table of Contents**|
|---|---|
|**Description .................................................................................................................................... 1**||
|**Features ........................................................................................................................................ 1**||
|**Potential applications ..................................................................................................................... 1**||
|**Product validation .......................................................................................................................... 1**||
|**Table**|**of Contents ........................................................................................................................... 3**|
|**1**|**Internal Electrical Schematic ................................................................................................... 4**|
|**2**|**Pin Description ...................................................................................................................... 5**|
|2.1|Pin Assignment ........................................................................................................................................ 5|
|2.2|Pin Description ........................................................................................................................................ 6|
|**3**|**Absolute Maximum Ratings ..................................................................................................... 8**|
|3.1|Module Section ........................................................................................................................................ 8|
|3.2|Inverter Section ....................................................................................................................................... 8|
|3.3|Control Section ........................................................................................................................................ 8|
|3.4|PFC Section .............................................................................................................................................. 9|
|**4**|**Thermal Characteristics ......................................................................................................... 10**|
|**5**|**Recommended Operation Conditions ...................................................................................... 11**|
|**6**|**Static Parameters ................................................................................................................. 12**|
|6.1|Inverter Section ..................................................................................................................................... 12|
|6.2|Control Section ...................................................................................................................................... 12|
|6.3|PFC Section ............................................................................................................................................ 13|
|**7**|**Dynamic Parameters ............................................................................................................. 14**|
|7.1|Inverter Section ..................................................................................................................................... 14|
|7.2|Control Section ...................................................................................................................................... 14|
|7.3|PFC Section ............................................................................................................................................ 15|
|**8**|**Thermistor ........................................................................................................................... 16**|
|**9**|**Mechanical Characteristics and Ratings ................................................................................... 17**|
|**10**|**Qualification Information....................................................................................................... 18**|
|**11**|**Diagrams and Tables ............................................................................................................. 19**|
|11.1|TCMeasurement Point ........................................................................................................................... 19|
|11.2|Backside Curvature Measurment Point ................................................................................................ 19|
|11.3|Switching Time Definition ..................................................................................................................... 20|
|**12**|**Application Guide .................................................................................................................. 21**|
|12.1|Typical Application Schematic ............................................................................................................. 21|
|12.2|Performance Chart ................................................................................................................................ 22|
|**13**|**Package Outline .................................................................................................................... 23**|
|**Revision history............................................................................................................................. 24**||



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**CIPOS™ Mini IM564 IM564-X6D** 

**Internal Electrical Schematic** 

**==> picture [103 x 46] intentionally omitted <==**

## **1 Internal Electrical Schematic** 

**==> picture [369 x 418] intentionally omitted <==**

**----- Start of picture text -----**<br>
GX (24)<br>NX (23)<br>(1) VS(U)<br>(2) VB(U) VB1<br>RBS1 X (22)<br>HO1<br>(3) VS(V)<br>VS1<br>(4) VB(V) VB2<br>RBS2 HO 2 P (21)<br>(5) VS(W) VS2<br>(6) VB(W) VB3<br>RBS3 HO3 U (20)<br>VS3<br>(7) HIN(U) HIN1 LO1<br>(8) HIN(V) HIN2<br>V (19)<br>(9) HIN(W) HIN3<br>(10) LIN(U) LIN1<br>LO2<br>(11) LIN(V) LIN2<br>(12) LIN(W) LIN3<br>W (18)<br>(13) VDD VDD<br>(14) VFO VFO<br>LO3<br>(15) ITRIP ITRIP<br>(16) VSS VSS N (17)<br>Thermistor<br>**----- End of picture text -----**<br>


**Figure 1 Internal electrical schematic** 

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Verison 2.4 

2026-01-26 

**CIPOS™ Mini IM564 IM564-X6D** 

**Pin Description** 

## **2 Pin Description** 

## **2.1 Pin Assignment** 

## Bottom View 

**==> picture [268 x 220] intentionally omitted <==**

**----- Start of picture text -----**<br>
(24) GX<br>(1) VS(U)<br>(2) VB(U) @)<br>(23) NX<br>(3) VS(V)<br>(4) VB(V)<br>(22) X<br>(5) VS(W)<br>(6) VB(W)<br>(21) P<br>(7) HIN(U)<br>(8) HIN(V) (20) U<br>(9) HIN(W)<br>(10) LIN(U)<br>(11) LIN(V) (19) V<br>(12) LIN(W)<br>(13) VDD<br>(14) VFO (18) W<br>(15) ITRIP<br>(16) VSS<br>(17) N<br>**----- End of picture text -----**<br>


**Figure 2 Pin configuration** 

**Table 2 Pin assignment** 

|**Pin Number**<br>~~_~~|**Pin name**<br>~~_~~|**Pin Description**|
|---|---|---|
|1<br>~~_~~<br>~~fF~~|VS(U)<br>~~_~~<br>~~fF~~|U-phase high-side floating IC supply offset voltage|
|2<br>~~_~~<br>~~fF——~~|VB(U)<br>~~_~~<br>~~fF——~~|U-phase high-side floating IC supply voltage|
|3<br>~~fF——~~|VS(V)<br>~~fF——~~|V-phase high-side floating IC supply offset voltage|
|4<br>~~———~~|VB(V)<br>~~———~~|V-phase high-side floating IC supply voltage|
|5<br>~~————~~|VS(W)<br>~~————~~|W-phase high-side floating IC supply offset voltage|
|6<br>~~——_~~|VB(W)<br>~~——_~~|W-phase high-side floating IC supply voltage|
|7<br>~~—__~~|HIN(U)<br>~~—__~~|U-phase high-side gate driver input|
|8<br>~~____~~|HIN(V)<br>~~____~~|V-phase high-side gate driver input|
|9<br>~~___~~|HIN(W)<br>~~___~~|W-phase high-side gate driver input|
|10<br>~~__|~~|LIN(U)<br>~~__|~~|U-phase low-side gate driver input|
|11<br>~~__|___~~|LIN(V)<br>~~__|___~~|V-phase low-side gate driver input|
|12<br>~~|___~~|LIN(W)<br>~~|___~~|W-phase low-side gate driver input|
|13<br>~~___~~|VDD<br>~~___~~|Low-side control supply|
|14<br>~~___—~~|VFO<br>~~___—~~|Fault output / Temperature monitor|
|15<br>~~___—_~~|ITRIP<br>~~___—_~~|Over-current shutdown input|
|16<br>~~—__~~|VSS<br>~~—__~~|Low-side control negative supply|
|17<br>~~__~~|N<br>~~__~~|Low-side emitter|



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**CIPOS™ Mini IM564 IM564-X6D** 

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## **Pin Description** 

|**IM564-X6D**<br>**Pin Description**|||
|---|---|---|
|**Pin Number**|**Pin name**|**Pin Description**|
|18|W|Motor W-phase output|
|19|V|Motor V-phase output|
|20|U|Motor U-phase output|
|21|P|Positive output voltage / Positive bus input voltage|
|22|X|PFC MOSFET drain|
|23|NX|PFC MOSFET source|
|24|GX|PFC MOSFET gate|



## **2.2 Pin Description** 

## **HIN(U, V, W) and LIN(U, V, W) (Low-side and highside control pins, Pin 7 - 12)** 

These pins are positive logic and they are responsible for the control of the integrated IGBTs. The Schmitt-trigger input thresholds of them are such to guarantee LSTTL and CMOS compatibility down to 3.3 V controller outputs. A pull-down resistor of about 5 k Ω is internally provided to prebias input during supply start-up, and a zener clamp is provided to protect the pin. Negative pulses down to an absolute minimum of -5.5 V are allowed that offers an outstanding robustness. Input Schmitt-trigger and noise filter provide noise rejection to short input pulses. 

The noise filter suppresses control pulses shoter than the filter time _t_ FIL,IN. The Figure 4 describes how the filter works. An input pulse-width shorter than 1 µs is not recommended. 

**==> picture [239 x 87] intentionally omitted <==**

**----- Start of picture text -----**<br>
IM564<br>VDD<br>Schmitt-Trigger<br>HINx INPUT NOISE<br>LINx FILTER<br> 5 k <br>SWITCH LEVEL<br>VSS VIH; VIL<br>Figure 3 Input pin structure<br>**----- End of picture text -----**<br>


**==> picture [197 x 63] intentionally omitted <==**

**----- Start of picture text -----**<br>
a) t FIL,IN b) t FIL,IN<br>HIN HIN<br>LIN LIN<br>high<br>HO HO<br>LO low LO<br>**----- End of picture text -----**<br>


**Figure 4 Input filter timing diagram** 

HO1 and LO1, HO2 and LO2, HO3 and LO3). When both inputs of the same leg are activated, only formerly activated one is remained activated so that the leg is kept steadily in a safe state. A minimum deadtime insertion of typically 360 ns is also provided by driver, in order to reduce crossconduction of the IGBTs. 

## **VFO (Fault-output and NTC, Pin 14)** 

The VFO pin indicates a module failure in case of under voltage at pin VDD or in case of triggered over current detection at ITRIP. An external pull-up resistor is required. 

**==> picture [191 x 61] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD IM564<br>RON,FLT From ITRIP - Latch<br>VFO<br>1<br>VSS From UV detection<br>Thermistor<br>**----- End of picture text -----**<br>


**Figure 5 Internal circuit at pin VFO** 

## **ITRIP (Over current detection function, Pin 15)** 

The IM564 product family provides an over current detection function by connecting the ITRIP input with the IGBT current feedback. The ITRIP comparator threshold (typ. 0.525 V) is referenced to VSS. An input noise filter (tITRIPMIN = typ. 300 ns) prevents the driver to detect false over-current events. 

Over current detection generates a shutdown of outputs of the gate driver. Fast track shutdown function allows low-side outputs to be turned off faster than high-side outputs about 200 ns. The fault-clear time is set to minimum 100 µs. 

The integrated gate driver additionally provides a shoot-through prevention capability that avoids the simultaneous on-states of the same leg (i.e. 

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**CIPOS™ Mini IM564 IM564-X6D** 

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## **Pin Description** 

## **VDD, VSS (Low-side control supply and reference, Pin 13, 16)** 

VDD is the control supply and it provides power both to input logic and to output stage. Input logic is referenced to VSS ground. 

The under-voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 12.4 V is present. The gate driver shuts down all the outputs, when the VDD supply voltage is below VDDUV- = 11.5 V. This prevents the IGBTs from critically low gate voltage levels during on-state and therefore from excessive power dissipation. 

## **VB(U, V, W) and VS(U, V, W) (High-side supplies, Pin 1 - 6)** 

VB to VS is the high-side supply voltage. The highside circuit can float with respect to VSS following the high-side IGBT emitter voltage. 

Due to the low power consumption, the floating driver stage is supplied by integrated bootstrap circuit. 

The under-voltage detection operates with a rising supply threshold of typical VBSUV+ = 11.5 V and a falling threshold of VBSUV- = 10.7 V. 

VS(U, V, W) provide a high robustness against negative voltage in respect of VSS of -50 V transiently. This ensures very stable designs even under harsh conditions. 

## **N (Low-side emitter, Pin 17)** 

The low-side common emitter is available for current measurement. It is recommended to keep the connection to pin VSS as short as possible to avoid unnecessary inductive voltage drops. 

## **W, V, U (High-side emitter and low-side collector, Pin 18 - 20)** 

These pins are connected to motor U, V, W input pins 

## **P (Positive bus input voltage, Pin 21)** 

The high-side IGBTs and PFC diode cathode are connected to the bus voltage. It is noted that the bus voltage does not exceed 450 V. 

## **X, NX, GX (Single boost PFC, Pins 22-24)** 

These pins are drain, source, and gate of MOSFET for single boost PFC stage. 

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**CIPOS™ Mini IM564 IM564-X6D** 

**Absolute Maximum Ratings** 

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## **3 Absolute Maximum Ratings** 

(VDD = 15 V, VGE = 15 V and TJ = 25°C, if not stated otherwise) 

## **3.1 Module Section** 

|**3.1**<br>**Module Section**|||||
|---|---|---|---|---|
|**Description**|**Symbol**|**Condition**|**Value**|**Unit**|
|Storage temperature range|TSTG||-40 ~ 125|°C|
|Operatingcase temperature|TC|Refer to Figure 7|-40 ~ 125|°C|
|Operating junction temperature|TJ||-40 ~ 150|°C|
|Isolation test voltage|VISO|1 min,RMS,f = 60 Hz|2000|V|



## **3.2 Inverter Section** 

|**Description**|**Symbol**|**Condition**|**Value**|**Unit**|
|---|---|---|---|---|
|Max. blockingvoltage|VCES|IC= 250µA|600|V|
|DC link supplyvoltage of P-N|VPN|Applied between P-N|450|V|
|DC link supplyvoltage(surge)of P-N|VPN(surge)|Applied between P-N|500|V|
|Continuous collector current|IC|TC= 25°C, TJ< 150°C|±20|A|
|||TC= 80°C, TJ< 150°C|±15||
|Maximum peak collector current|IC(peak)|TC= 25°C, TJ< 150°C<br>less than 1 ms|±40|A|
|Power dissipationper IGBT|Ptot||63.1|W|
|Short circuit withstand time|tSC|VDC≤ 400V,TJ= 150°C|5|µs|



## **3.3 Control Section** 

|**Description**|**Symbol**|**Condition**|**Value**|**Unit**|
|---|---|---|---|---|
|High-side offset voltage|VS||600|V|
|Repetitive peak reverse voltage of<br>bootstrapdiode|VRRM||600|V|
|Module supplyvoltage|VDD||-1 ~ 20|V|
|High-side floating supply voltage<br>(VBreference to VS)|VBS||-1 ~ 20|V|
|Input voltage(LIN,HIN,ITRIP)|VIN||-5.5 ~ VDD+0.5|V|



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## **Absolute Maximum Ratings** 

## **3.4 PFC Section** 

|**IM564-X6D**<br>**Absolute Maximum Ratings**<br>**3.4**<br>**PFC Section**|||||
|---|---|---|---|---|
|**Description**|**Symbol**|**Condition**|**Value**|**Unit**|
|Max. blockingvoltage|VDSS|VGS= 0 V,ID= 1 mA|600|V|
|Gate-source voltage|VGS|DC|±20|V|
|||AC (f > 1 Hz)|±30||
|Continuous drain current|ID|TC= 25°C, TJ≤ 150°C|±20|A|
|||TC= 80°C, TJ≤ 150°C|±15||
|Maximum peak drain current|ID(peak)|TJ≤ 150°C, TC= 25°C|±40|A|
|Power dissipation|Ptot||88.6|W|
|Diode forward current|IF|TC= 25°C,TJ≤ 150°C|20|A|
|||TC= 80°C,TJ≤ 150°C|15||
|Diodepulsed current|IF(peak)|TC= 25°C,TJ≤ 150°C|40|A|
|Diode non repetitive surge forward<br>current|IFSM|TC= 25°C, tp= 10 ms, sine<br>half-wave|120|A|



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**CIPOS™ Mini IM564 IM564-X6D Thermal Characteristics** 

**==> picture [103 x 46] intentionally omitted <==**

## **4 Thermal Characteristics** 

|**Description**|**Symbol**|**Condition**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**Min.**|**Typ. **|**Max.**||
|Single IGBT thermal resistance,<br>junction-case(Inverter)|RthJC|(See Figure 7 for TC<br>measurementpoint)|||1.98|K/W|
|Single Diode thermal resistance,<br>junction-case(Inverter)|RthJC,D||||3.24|K/W|
|Single MOSFET thermal resistance,<br>junction-case(PFC)|RthJC|(See Figure 7 for TC<br>measurementpoint)|||1.41|K/W|
|Single Diode thermal resistance,<br>junction-case(PFC)|RthJC,D||||2.34|K/W|



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## **Recommended Operation Conditions** 

## **5 Recommended Operation Conditions** 

All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. 

|**Description**|**Symbol**||**Value**||**Unit**|
|---|---|---|---|---|---|
|||**Min.**|**Typ. **|**Max.**||
|DC link supplyvoltage of P-N|VPN|0|-|450|V|
|Low-side supplyvoltage|VDD|13|15|17.5|V|
|High-side floatingsupplyvoltage(VBvs. VS)|VBS|13|-|17.5|V|
|Logic input voltages LIN, HIN, ITRIP|VIN<br>VITRIP|0|-|5|V|
|Inverter PWM carrier frequency|fPWM|-|-|20|kHz|
|PFC switchingfrequency|fPWM(PFC)|||150|kHz|
|External deadtime between HIN and LIN|DT|1.5|-|-|µs|
|Voltage between VSS– N and NX(includingsurge)|VCOMP|-5|-|5|V|
|Minimum input pulse width|PWIN(ON)<br>PWIN(OFF)|1|-|-|µs|
|Control supply variation|ΔVBS,<br>ΔVDD|-1<br>-1|-<br>-|1<br>1|V/µs|
|PFC MOSFETgate-source voltage|VGE|10|15|18|V|
|PFC MOSFET external gate parameters|RG|-|5.1|-|Ω|
||CGS|-|4.7|-|nF|
||RGS|-|10|-|kΩ|



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## **Static Parameters** 

## **6 Static Parameters** 

(VDD = 15 V, VGE = 15 V and TJ = 25°C, if not stated otherwise) 

## **6.1 Inverter Section** 

|**Description**|**Symbol**|**Condition**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**Min.**|**Typ. **|**Max.**||
|Collector-emitter voltage|VCE(Sat)|IC= 20 A, TJ= 25°C<br>IC= 20 A,TJ= 150°C|-<br>-|1.75<br>2.0|2.05<br>-|V|
|Collector-emitter leakage current|ICES|VCE= 600 V|-|-|1|mA|
|Diode forward voltage|VF|IF= 20 A, TJ= 25°C<br>IF= 20 A,TJ= 150°C|-<br>-|2.2<br>2.15|2.8<br>-|V|



## **6.2 Control Section** 

|**6.2**<br>**Control Section**|||||||
|---|---|---|---|---|---|---|
|**Description**|**Symbol**|**Condition**||**Value**||**Unit**|
||||**Min.**|**Typ. **|**Max.**||
|Logic "1" input voltage(LIN,HIN)|VIH||1.7|2.0|2.3|V|
|Logic "0" input voltage(LIN,HIN)|VIL||0.7|0.9|1.1|V|
|ITRIPpositivegoingthreshold|VIT,TH+||475|525|570|mV|
|ITRIP input hysteresis|VIT,HYS||45|70|-|mV|
|VDDand VBSsupply under voltage<br>positive going threshold|VDDUV+||11.5|12.4|13.1|V|
||VBSUV+||10.6|11.5|12.2||
|VDDand VBSsupply under voltage<br>negative going threshold|VDDUV-||10.6|11.5|12.3|V|
||VBSUV-||9.7|10.7|11.7||
|VDDand VBSsupply under voltage<br>lockout hysteresis|VDDUVH<br>VBSUVH||0.5|0.9|-|V|
|Quiescent VBxsupply current<br>(VBxonly)|IQBS|HIN= 0 V|-|-|300|µA|
|Quiescent VDDsupply current<br>(VDDonly)|IQDD|LIN= 0 V, HINX= 5 V|-|-|1.1|mA|
|Input bias current for LIN,HIN|IIN+|VIN= 5 V|-|1.1|1.7|mA|
|Input bias current  for ITRIP|IITRIP+|VITRIP= 5 V|-|68|185|µA|
|Input bias current for VFO|IFO|VFO= 5 V,VITRIP= 0 V|-|60|-|µA|
|VFOoutput  voltage|VFO|IFO= 10 mA,VITRIP= 1 V|-|0.35|-|V|
|Bootstrapdiode forward voltage|VF_BSD|IF= 0.3 mA|-|1.0|-|V|
|Bootstrapdiode resistance|RBSD|VF1= 4 V, VF2= 5 V|-|37|-|Ω|



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**CIPOS™ Mini IM564 IM564-X6D** 

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## **Static Parameters** 

## **6.3 PFC Section** 

|**IM564-X6D**<br>**Static Parameters**<br>**6.3**<br>**PFC Section**|||||||
|---|---|---|---|---|---|---|
|**Description**|**Symbol**|**Condition**||**Value**||**Unit**|
||||**Min.**|**Typ. **|**Max.**||
|PFC MOSFET drain-source on-<br>state resistance|RDS(on)|ID= 20 A, VGS= 15 V, TJ= 25°C<br>ID= 20 A, VGS= 15 V, TJ= 150°C|-<br>-|0.086<br>0.156|0.115<br>-|Ω|
|PFC MOSFET drain-source<br>leakage current|IDSS|VDS= 600 V, VGS= 0 V|-|-|1|mA|
|PFC diode forward voltage|VF|IF= 20 A, TJ= 25°C<br>IF= 20 A,TJ= 150°C|-<br>-|1.4<br>1.3|-<br>-|V|



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## **Dynamic Parameters** 

## **7 Dynamic Parameters** 

(VDD = 15 V, VGE = 15 V and TJ = 25°C, if not stated otherwise) 

## **7.1 Inverter Section** 

|**7.1**<br>**Inverter Section**|||||||
|---|---|---|---|---|---|---|
|**Description**|**Symbol**|**Condition**||**Value**||**Unit**|
||||**Min.**|**Typ. **|**Max.**||
|Turn-onpropagation delaytime|ton|VLIN, HIN= 5 V,<br>IC= 20 A,<br>VDC= 300 V|-|740|-|ns|
|Turn-on rise time|tr||-|60|-|ns|
|Turn-on switchingtime|tc(on)||-|200|-|ns|
|Reverse recoverytime|trr||-|215|-|ns|
|Turn-offpropagation delaytime|toff|VLIN, HIN= 0 V,<br>IC= 20 A,<br>VDC= 300 V|-|860|-|ns|
|Turn-off fall time|tf||-|20|-|ns|
|Turn-off switchingtime|tc(off)||-|65|-|ns|
|Short circuitpropagation delaytime|tSCP|From VIT,TH+to 10% ISC|-|1600|-|ns|
|IGBT turn-on energy (includes<br>reverse recovery of diode)|Eon|VDC= 300 V, VDD= 15 V,<br>IC= 20 A<br>TJ= 25°C<br>TJ= 150°C|-<br>-|710<br>780|-<br>-|µJ|
|IGBT turn-off energy|Eoff|VDC= 300 V, VDD= 15 V,<br>IC= 20 A<br>TJ= 25°C<br>TJ= 150°C|-<br>-|250<br>350|-<br>-|µJ|
|Diode recovery energy|Erec|VDC= 300 V, VDD= 15 V,<br>IC= 20 A<br>TJ= 25°C<br>TJ= 150°C|-<br>-|60<br>115|-<br>-|µJ|



## **7.2 Control Section** 

|**7.2**<br>**Control Section**|||||||
|---|---|---|---|---|---|---|
|**Description**|**Symbol**|**Condition**||**Value**||**Unit**|
||||**Min.**|**Typ. **|**Max.**||
|Input filter time ITRIP|tITRIP|VITRIP= 1 V|-|530|-|ns|
|Input filter time at LIN, HIN  for turn<br>on and off|tFIL,IN|VLIN, HIN= 0 V or 5 V|-|290|-|ns|
|Fault clear time after ITRIP-fault|tFLTCLR||100|280|-|µs|
|ITRIP to Fault propagation delay|tFLT|VLIN, HIN= 0 or VLIN, HIN= 5 V,<br>VITRIP= 1 V|-|680|1000|ns|
|Internal deadtime|DTIC||-|360|-|ns|
|Matching propagation delay time (On<br>and Off)all channels|MT|External dead time > 500<br>ns|-|20|-|ns|



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**CIPOS™ Mini IM564 IM564-X6D** 

**==> picture [103 x 46] intentionally omitted <==**

## **Dynamic Parameters** 

## **7.3 PFC Section** 

|**IM564-X6D**<br>**Dynamic Parameters**<br>**7.3**<br>**PFC Section**|||||||
|---|---|---|---|---|---|---|
|**Description**|**Symbol**|**Condition**||**Value**||**Unit**|
||||**min**|**typ**|**max**||
|Input capacitance|Ciss|VGS= 0 V, VDC= 400 V,<br>f = 250 kHz|-|1952|-|pF|
|Output capacitance|Coss||-|33|-||
|Effective output capacitance,<br>energy related1|Co(er)|VGS= 0 V, VDC= 0..400 V|-|62|-||
|Gate charge total|QG|VDC= 400 V, ID= 10.5 A,<br>VGS= 0 to 10 V|-|45|-|nC|
|Turn-on delay time|td(on)|VDC= 400 V, ID= 20 A,<br>RG= 5.1 Ω, CGS= 4.7 nF,<br>RGS= 10 kΩ, TJ= 25°C|-|30|-|ns|
|Turn-on rise time|tr||-|25|-|ns|
|Turn-off delay time|td(off)||-|110|-|ns|
|Turn-off fall time|tf||-|20|-|ns|
|Reverse recovery time|trr||-|45|-|ns|
|Turn-on energy|Eon|VDC= 400 V, ID= 20 A, RG= 5.1<br>Ω, CGS= 4.7 nF, RGS= 10 kΩ<br>TJ= 25°C<br>TJ= 150°C|-<br>-|310<br>390|-<br>-|µJ|
|Turn-off energy|Eoff|VDC= 400 V, ID= 20 A, RG= 5.1<br>Ω, CGS= 4.7 nF, RGS= 10 kΩ<br>TJ= 25°C<br>TJ= 150°C|-<br>-|110<br>130|-<br>-|µJ|
|Diode recovery energy|Erec|VDC= 400 V, ID= 20 A, RG= 5.1<br>Ω, CGS= 4.7 nF, RGS= 10 kΩ<br>TJ= 25°C<br>TJ= 150°C|-<br>-|90<br>140|-<br>-|µJ|



1 Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400 V. 

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**CIPOS™ Mini IM564 IM564-X6D Thermistor** 

## **8 Thermistor** 

|**8**<br>**Thermistor**|||||||
|---|---|---|---|---|---|---|
|||||**Value**|||
|**Description**|**Condition**|**Symbol**|**Min.**|**Typ. **|**Max.**|**Unit**|
|Resistance|TNTC= 25°C|RNTC|-|85|-|k|
|B-constant of NTC<br>(Negative Temperature Coefficient)||B(25/100)|-|4092|-|K|



**==> picture [500 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
3500<br>35<br>3000 TL  Min.<br>30 Typ.<br>r o Me Max.<br>25<br>2500<br>Pe 20 | resins<br>2000 ACE 15 ESC<br>10<br>1500 A ONE |  ese<br>5<br>pL POSE | ere<br>0 CEECCEECEECSSRE<br>1000 PAL) 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 7] 3680]<br>500 BAN Thermistor temperature [ ℃ ]<br>0 CEEASSELE<br>EE EEE<br>-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130<br>Thermistor temperature [ ℃ ]<br>]<br>Ω<br>Thermistor resistance [k<br>]<br>Ω<br>k<br>[<br>Thermistor resistance<br>**----- End of picture text -----**<br>


**Figure 6 Thermistor resistance – temperature curve and table (For more information, please refer to the application note ‘AN2016-10 CIPOS Mini Technical description’)** 

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**CIPOS™ Mini IM564 IM564-X6D** 

**==> picture [103 x 46] intentionally omitted <==**

## **Mechanical Characteristics and Ratings** 

## **9 Mechanical Characteristics and Ratings** 

|**Description**|**Condition**||**Value**||**Unit**|
|---|---|---|---|---|---|
|||**Min.**|**Typ. **|**Max.**||
|Comparative TrackingIndex(CTI)||600|-|-|V|
|Mountingtorque|M3 screw and washer|0.49|-|0.78|Nm|
|Backside Curvature|Refer to Figure 8|-50|-|100|µm|
|Weight||-|6.83|-|g|



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## **CIPOS™ Mini IM564 IM564-X6D Qualification Information** 

**==> picture [103 x 46] intentionally omitted <==**

## **10 Qualification Information** 

|**UL Certification**|File number: E314539||
|---|---|---|
|**RoHS Compliant**|Yes(Lead-free terminalplating)||
|**ESD**|HBM(Human BodyModel)Class|2|
||CDM(Charged Device Model)<br>Class|C3|



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**CIPOS™ Mini IM564 IM564-X6D Diagrams and Tables** 

**==> picture [235 x 38] intentionally omitted <==**

**----- Start of picture text -----**<br>
11 Diagrams and Tables<br>11.1 TC Measurement Point<br>**----- End of picture text -----**<br>


**Figure 7 TC measurement point[1]** 

**==> picture [311 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
11.2 Backside Curvature Measurment Point<br>**----- End of picture text -----**<br>


**Figure 8 Backside curvature measurement position** 

1Any measurement except for the specified point in Figure 7 is not relevant for the temperature verification and brings wrong or different information. 

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**CIPOS™ Mini IM564 IM564-X6D** 

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## **Diagrams and Tables** 

## **11.3 Switching Time Definition** 

**==> picture [432 x 394] intentionally omitted <==**

**----- Start of picture text -----**<br>
HINx 2.0V<br>LINx<br>0.9V trr<br>toff ton irm<br>iCx 10% irm<br>90% 90 %<br>tf tr<br>10%<br>10% 10% 10%<br>v CEx<br>tc(off) tc(on)<br>Switching times definition of inverter part<br>90%<br>v GS<br>10%<br>trr<br>td(off) td(on)<br>10%<br>iD<br>90%<br>90%<br>tr<br>10% 10%<br>v DS tf<br>**----- End of picture text -----**<br>


**Figure 9 Switching times definition of inverter part** 

**Figure 10 Switching times definition of PFC part** 

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**CIPOS™ Mini IM564 IM564-X6D** 

**Application Guide** 

**==> picture [103 x 46] intentionally omitted <==**

## **12 Application Guide** 

## **12.1 Typical Application Schematic** 

**==> picture [499 x 331] intentionally omitted <==**

**----- Start of picture text -----**<br>
#1<br>GX (24) RG PFC<br>gate  VDD line<br>driver<br>RGS CGS IC<br>#4 NX (23)<br>(1) VS(U)<br>(2) VB(U)<br>VB1 #7<br>#9<br>RBS1 X (22)<br>#4 HO1<br>(3) VS(V)<br>(4) VB(V) VS1<br>VB2<br>RBS2 HO2 P (21)<br>#4 (5) VS(W)<br>VS2<br>(6) VB(W)<br>VB3 ~<br>HO3 U (20)<br>RBS3 AC<br>#1 VS3<br>(7) HIN(U)<br>Micro (8) HIN(V) HIN1HIN2 LO1 #5<br>Controller (9) HIN(W) HIN3 V (19)  3-ph AC<br>(10) LIN(U) LIN1 Motor<br>(11) LIN(V)<br>LIN2 LO2<br>(12) LIN(W)<br>LIN3<br>W (18)<br>(13) VDD<br>VDD line VDD #8<br>(14) VFO VFO<br>(15) ITRIP LO3<br>ITRIP<br>5 or 3.3V line (16) VSS VSS N (17)<br>#3 #6 #7<br><Signal for protection><br>#2 Current sensing<br>Input surge voltage sensing<br><Signal for protection><br>**----- End of picture text -----**<br>


**Figure 11 Typical application circuit** 

- #1 Input circuit 

   - RC filter can be used to reduce input signal noise. (100 Ω, 1 nF) 

   - The capacitors should be located close to the IPM (to VSS terminal especially). 

- #2 Itrip circuit 

   - To prevent protection function errors, RC filter (1.5~ 2.0 µs, e.g. 68  22 nF) circuit is recommended. 

   - The capacitor should be located close to Itrip and VSS terminals. 

- #3 VFO circuit 

   - VFO pin is open drain configuration. This terminal should be pulled up to the bias voltage of the 5 V/3.3 V through a proper resistor. 

   - It is recommended that RC filter is placed close to the controller. 

- #4 VB-VS circuit 

- Capacitors for high-side floating supply voltage should be placed close to VB and VS terminals. 

- • #5 Snubber capacitor 

   - The wiring among the IPM, snubber capacitor and shunt resistors should be short as possible. 

- #6 Shunt resistor 

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**CIPOS™ Mini IM564 IM564-X6D** 

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## **Application Guide** 

   - SMD type shunt resistors are strongly recommended to minimize its internal stray inductance. 

- #7 Ground pattern 

   - Pattern overlap of power ground and signal ground should be minimized. The patterns should be connected at one end of shunt resistor only for the same potential. 

- #8 Input surge voltage protection circuit 

   - This protection circuit can be added to protect PFC MOSFET from excessive surge voltage. 

- #9 Inrush current protection circuit 

   - Proper inrush current protection circuit has to be considered. 

   - Additional components such as thermistor, relay, or bypass diode may be required depending on the system design and the operating conditions including grid fluctuation. 

## **12.2 Performance Chart** 

**==> picture [367 x 299] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br>VDC = 400 V, VDD = VBS = 15 V, SVPWM<br>TJ   150 o C, TC   125 o C, M.I. = 0.8, P.F. = 0.8<br>16<br>fSW = 5 kHz<br>12<br>fSW = 15 kHz<br>8<br>4<br>0<br>0 25 50 75 100 125 150<br>Case temperature, TC [oC]<br>]<br>RMS<br> [A<br>O<br>Maximum output current, I<br>**----- End of picture text -----**<br>


**Figure 12 Maximum operating current SOA of inverter part[1]** 

1This maximum operating current SOA is just one of example based on typical characteristics for this product. It can be changed by each user’s actual operating conditions. 

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## **CIPOS™ Mini IM564 IM564-X6D Package Outline** 

## **13 Package Outline** 

**Figure 13 IM564-X6D** 

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## **CIPOS™ Mini IM564 IM564-X6D Revision history** 

**==> picture [103 x 46] intentionally omitted <==**

## **Revision history** 

|**Document**<br>**version**|**Date of release**|**Description of changes**|
|---|---|---|
|Version 2.0|2019-08-09|Initial Release|
|Version 2.1|2019-11-05|Added remark in Table 1<br>Corrected error in Figure 9|
|Version 2.2|2020-04-24|Corrected error in Figure 12<br>Updated Figure 13 and**Error! Reference source not found.**|
|Version 2.3|2021-12-21|Updated Figure 12|
|Version 2.4|2021-01-26|Consolidated into a single package option<br>Corrected figure in Figure 8|



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## **Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2026-01-26** The information given in this document shall in no event be regarded as a guarantee of conditions or **Published by** characteristics  (“Beschaffenheitsgarantie”) . **Infineon Technologies AG** With respect to any examples, hints or any typical **81726 München, Germany** values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all **©  2026 Infineon Technologies AG.** warranties and liabilities of any kind, including without limitation warranties of non-infringement **All Rights Reserved.** of intellectual property rights of any third party. **Do you have a question about this** In addition, any information given in this document **document?** is subject to customer’s compliance with its obligations stated in this document and any **Email: erratum@infineon.com** applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in **Document reference** customer’s applications. **ifx1** The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IM564X6DXKMA1/intelligent-power-module-ipm-igbt-mosfet-600-v-20)
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