# Intelligent Power Module (IPM), MOSFET, 250 V, 12 A, 1.5 kV, QFN, CIPOS Nano

![Product image](https://novapart.co/image/farnell:3577328RL/)

**URL**: https://novapart.co/products/IM111X3Q1BAUMA1/intelligent-power-module-ipm-mosfet-250-v-12-a-15
**SKU**: IM111X3Q1BAUMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Intelligent Power Modules
**Price**: €6.0500
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Ipm Series | CIPOS Nano |
| Product Range | CIPOS Nano |
| Ipm Case Style | QFN |
| Ipm Power Device | MOSFET |
| Isolation Voltage | 1.5kV |
| Current Rating (Ic / Id) | 12A |
| Voltage Rating (Vces / Vdss) | 250V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3577328RL/)

**IM111-X3Q1B** 

## **CIPOS™ Nano** 

## **IM111-X3Q1B** 

## **Description** 

IM111-X3Q1B is an H-bridge integrated power module (IPM) designed for advanced appliance motor drive applications. This advanced low profile IPM offers a combination of Infineon’s low RDS(ON) OptiMOS ™ technology and the industry benchmark high voltage, rugged driver in a small 12x10mm QFN package. 

## **Features** 

- Integrated gate drivers and bootstrap functionality 

- Overcurrent protection & fault reporting 

- Low 0.063Ω RDS(on), 250V OptiMOS™ 

- Under-voltage lockout for both channels 

- Shoot through protection 

- Matched propagation delay for all channels 

- Optimized dv/dt for loss and EMI trade offs 

- Advanced input filter 

- 3.3V input logic compatible 

- Motor power range 80-200W 

- 1500VRMS min isolation 

## **Potential Applications** 

- Linear refrigerator compressors 

- High efficiency single-phase motor drives 

- DC-AC inverters 

## **Product Validation** 

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. 

**Table 1 Part Ordering Table Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity** IM111-X3Q1B QFN 12x10mm Tape and Reel 2000 IM111-X3Q1BAUMA1 ~~TEE—~~ Final Datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.01.0 **www.infineon.com** 

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## **Table of contents** 

|**Description**|**……………………………………………………………………………………………………………..1**|
|---|---|
|**Features………………………………………………………………………………………………………………...1**||
|**Potential Applications ..................................................................................................................... 1**||
|**Product Validation .......................................................................................................................... 1**||
|**Table of contents ............................................................................................................................ 2**||
|**1**|**Internal Electrical Schematic .......................................................................................... 3**|
|**2**|**Pin Configuration ........................................................................................................... 4**|
|2.1|Pin Assignment ........................................................................................................................................ 4|
|2.2|Pin Descriptions ....................................................................................................................................... 5|
|**3**|**Absolute Maximum Rating .............................................................................................. 6**|
|3.1|Module ..................................................................................................................................................... 6|
|3.2|Inverter .................................................................................................................................................... 6|
|3.3|Control ..................................................................................................................................................... 6|
|**4**|**Thermal Characteristics ................................................................................................. 7**|
|**5**|**Recommended Operating Conditions ............................................................................... 8**|
|**6**|**Static Parameters .......................................................................................................... 9**|
|6.1|Inverter .................................................................................................................................................... 9|
|6.2|Control ..................................................................................................................................................... 9|
|**7**|**Dynamic Parameters ..................................................................................................... 10**|
|7.1|Inverter .................................................................................................................................................. 10|
|7.2|Control ................................................................................................................................................... 10|
|**8**|**Thermistor Characteristics ............................................................................................ 11**|
|**9**|**Qualification Information .............................................................................................. 12**|
|**10**|**Diagrams & Tables ........................................................................................................ 13**|
|10.1|Input-Output Logic Table ...................................................................................................................... 13|
|10.2|Switching Time Definitions ................................................................................................................... 13|
|**11**|**Application Guide ......................................................................................................... 14**|
|11.1|Typical Application Schematic ............................................................................................................. 14|
|11.2|Performance Charts .............................................................................................................................. 14|
|11.3|–Vs Immunity ......................................................................................................................................... 15|
|**12**|**Package Outline ........................................................................................................... 16**|
|**Revision History ............................................................................................................................ 18**||



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## **1 Internal Electrical Schematic** 

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**----- Start of picture text -----**<br>
Integrated in HVIC 6~8, 32~35  V+<br>9  VB1<br>10  VDD1<br>11  HIN1<br>12  LIN1 Half-Bridge 19~25  VS1<br>13  ITRIP1 HVIC<br>14  RFE1<br>15, 39  COM1 17~18  VR1<br>16  NTC<br>36  VB2<br>37  VDD2<br>1  HIN2<br>2  LIN2 Half-Bridge 26~28, 31  VS2<br>3  ITRIP2 HVIC<br>4  RFE2<br>5, 38  COM2<br>29~30  VR2<br>**----- End of picture text -----**<br>


**Figure 1 Internal electrical schematic.** 

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**CIPOS™ Nano IM111-X3Q1B** 

## **2 Pin Configuration** 

## **2.1 Pin Assignment** 

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**----- Start of picture text -----**<br>
12 doo00ry 1113 14 3915 16 17 18 19 (Bottom 20 21 View) 2223<br>10 24<br>9 25<br>8 26<br>7 27<br>6<br>28<br>5<br>4 38 29<br>3 30<br>2<br>1 31<br>37 36 35 34 33 32<br>a) E<br>**----- End of picture text -----**<br>


## **Figure 2 Module pinout** 

|**Pin**<br>~~|~~|**Name**<br>~~|~~|**Description**|
|---|---|---|
|1<br>~~|~~|HIN2<br>~~|J~~|Logic Input for High Side Gate Driver(Active High)|
|2|LIN2<br>~~Sy~~|Logic Input for Low Side Gate Driver(Active High)|
|3|ITRIP2<br>~~oy~~|Over Current Protection|
|4|RFE2<br>~~J~~|Fault Clear,Fault Reporting& Enable|
|5|COM2<br>~~sy~~|Logic Ground|
|6-8|V+<br>~~sy~~|DC Bus Voltage Positive|
|9|VB1|High Side FloatingSupply (BootstrapCapConnection +)|
|10|VDD1<br>~~J~~|Low Side Control Supply|
|11|HIN1<br>~~oy~~|Logic Input for High Side Gate Driver(Active High)|
|12|LIN1<br>~~sy~~|Logic Input for Low Side Gate Driver(Active High)|
|13|ITRIP1<br>~~J~~|Over Current Protection|
|14|RFE1<br>~~Sy~~|Fault Clear,Fault Reporting& Enable|
|15|COM1<br>~~sy~~|Logic Ground|
|16|NTC<br>~~J~~|Negative Temperature Coeffient Thermistor|
|17-18|VR1<br>~~J~~|Low Side Source|
|19-25|VS1<br>~~J~~|Phase Output|
|26-28|VS2<br>~~J~~|Phase Output|
|29-30|VR2<br>~~J~~|Low Side Source|
|31|VS2<br>~~J~~|Phase Output(BootstrapCapConnection -)|
|32-35|V+<br>~~sy~~|DC Bus Voltage Positive|
|36|VB2<br>~~J~~|High Side FloatingSupply (BootstrapCapConnection +)|
|37|VDD2<br>~~J~~|Low Side Control Supply|
|38|COM2<br>~~sy~~|Logic Ground|
|39|COM1<br>~~J~~|Logic Ground|



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## **2.2 Pin Descriptions** 

## **LIN and HIN (Low side and high side control pins)** 

These pins are positive logic and they are responsible for the control of the integrated OptiMOS. The Schmitt-trigger input thresholds of them are such to guarantee LSTTL and CMOS compatibility down to 3.3V controller outputs. Pulldown resistor of about 800k  is internally provided to pre-bias inputs during supply start-up and an ESD diode is provided for pin protection purposes. Input Schmitt-trigger and noise filter provide beneficial noise rejection to short input pulses. 

The noise filter suppresses control pulses which are below the filter time _t_ FILIN. The filter acts according to Figure 4. 

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**----- Start of picture text -----**<br>
CIPOS [TM]<br>Schmitt-Trigger<br>HINx INPUT NOISE<br>LINx FILTER<br> 8.0 M <br>SWITCH LEVEL<br>COM VIH; VIL<br>Figure 3 Input pin structure<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
a) t FILIN b) t FILIN<br>HIN HIN<br>LIN LIN<br>high<br>HO HO<br>LO low LO<br>Figure 4 Input filter timing diagram<br>**----- End of picture text -----**<br>


The integrated gate drive provides additionally a shoot through prevention capability which avoids the simultaneous on-state of the high-side and lowside switch of the same inverter phase. A minimum deadtime insertion of typically 300ns is also provided by driver IC, in order to reduce crossconduction of the external power switches. 

## **VDD, COM (Low side control supply and reference)** 

VDD is the control supply and it provides power both to input logic and to output power stage. Input logic is referenced to COM ground. 

The under-voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 8.9V is present. 

= 7.7V. This prevents the external power switches from critically low gate voltage levels during onstate and therefore from excessive power dissipation. 

## **VB and VS (High side supplies)** 

VB to VS is the high side supply voltage. The high side circuit can float with respect to COM following the external high side power device source voltage. 

Due to the low power consumption, the floating driver stage is supplied by integrated bootstrap circuit. 

The under-voltage detection operates with a rising supply threshold of typical VBSUV+ = 8.9V and a falling threshold of VBSUV- = 7.7V. 

VS provide a high robustness against negative voltage in respect of COM. This ensures very stable designs even under rough conditions. 

## **VR (Low side source)** 

The low side source is available for current measurements of each phase leg. It is recommended to keep the connection to pin COM as short as possible in order to avoid unnecessary inductive voltage drops. 

## **VS (High side source and low side drain)** 

This pin is motor input pin. 

## **V+ (Positive bus input voltage)** 

The high side OptiMOS devices are connected to the bus voltage. It is noted that the bus voltage does not exceed 200V. 

## **ITRIP (Over current protection)** 

Analog input for over-current shutdown. When active, ITRIP shuts down outputs and activates RFE low. 

## **RFE (Fault clear, fault reporting and enable)** 

Integrated fault reporting function, fault clear timer and external enable pin. This pin has negative logic and an open-drain output. 

The IC shuts down all the gate drivers power outputs, when the VDD supply voltage is below VDDUV- 

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## **3 Absolute Maximum Ratings** 

## **3.1 Module** 

|**3.1**<br>**Module**|**3.1**<br>**Module**|**3.1**<br>**Module**|**3.1**<br>**Module**|**3.1**<br>**Module**|
|---|---|---|---|---|
|**Table 3**|||||
|**Parameter**|**Symbol**|**Condition**||**Units**|
|Storage temperature|TSTG||-40 ~ 150|°C|
|Operatingcase temperature|TC||-40 ~ 125|°C|
|Operating junction temperature|TJ||-40 ~ 150|°C|
|Isolation voltage1|VISO|1min,RMS,f = 60Hz|1500|V|



1. Characterized, not tested at production 

## **3.2 Inverter** 

## **Table 4** 

|**Parameter**|**Symbol**|**Condition**||**Units**|
|---|---|---|---|---|
|Max. blockingvoltage|VDSS/VRRM||250|V|
|Output current based on RTH(J-C)B1|IO|TC= 25°C,DC|12|A|
|Peak output current|IOP|TC= 25°C, pulsed current|38|A|
|Output current based on RTH(J-A)|IOA|TA= 25°C,DC|4|A|
|Peakpower dissipationper MOSFET|P|TC= 25°C|150|W|



1. Limited by wire bonding current capability inside the package 

## **3.3 Control** 

|**3.3**<br>**Control**|**3.3**<br>**Control**|**3.3**<br>**Control**|**3.3**<br>**Control**|**3.3**<br>**Control**|
|---|---|---|---|---|
|**Table 5**|||||
|**Parameter**|**Symbol**|**Condition**||**Units**|
|Low side control supplyvoltage|VDD||-0.3 ~ 20|V|
|Input voltage LIN,HIN|VIN||-0.3 ~ VDD|V|
|High side floating supply voltage<br>(VBreference to VS)|VBS||-0.3 ~ 20|V|



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## **4 Thermal Characteristics** 

## **Table 6** 

|**Table 6**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Min.**|**Typ. **|**Max.**|**Units**|
|Single MOSFET thermal<br>resistance, junction-case<br>(bottom)|RTH(J-C)B|Measures either high<br>side or low side<br>device|-|0.7|-|°C/W|
|Thermal resistance,<br>junction-ambient(1)|RTH(J-A)||-|12|-|°C/W|



(1) The junction to ambient thermal resistance is simulated based on standard JESD51-5/7 using a FR4 2s2p board with device mounted and power evenly distributed to four power MOSFETs. 

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## **5 Recommended Operating Conditions** 

**Table 7** 

|**Table 7**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Min.**|**Typ. **|**Max.**|**Units**|
|Positive DC bus input voltage|V+|-|-|200|V|
|Low side control supplyvoltage|VDD|13.5|-|16.5|V|
|High side floatingsupplyvoltage|VBS|12.5|-|17.5|V|
|Input voltage|VIN|0|-|5|V|
|PWM carrier frequency|FPWM|-|6|-|kHz|
|External dead time between HIN & LIN|DT|1|-|-|µs|
|Voltage between COM and VR|VCOMR|-5|-|5|V|
|Minimum input pulse width|PWIN(ON),<br>PWIN(OFF)|0.5|-|-|µs|



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## **6 Static Parameters** 

## **6.1 Inverter** 

(VDD-COM) = (VB - VS) = 15 V.  TC = 25°C unless otherwise specified. 

**Table 8** 

|**Table 8**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Min.**|**Typ. **|**Max.**|**Units**|
|Drain to Source ON Resistance|RDS(on)|ID= 1A|-|0.063|0.073|Ω|
|||ID= 1A,TJ= 150℃|-|0.12|-|Ω|
|Drain source leakage current|IDSS|VIN= 0V,V+ = 250V|-|15|-|µA|
|||VIN= 0V, V+ = 250V, TJ<br>= 150°C|-|40|-|µA|
|Diode forward voltage|VF|IF= 1A|-|0.71|-|V|
|||IF= 1A,TJ= 150℃|-|0.48|-|V|



## **6.2 Control** 

(VDD-COM) = (VB - VS) = 15 V.  TC = 25°C unless otherwise specified. The VIN and IIN are referenced to COM and are applicable to all six channels. The VDDUV is referenced to COM. The VBSUV is referenced to VS. 

**Table 9** 

|**Table 9**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Min.**|**Typ. **|**Max.**|**Units**|
|Logic “1” input voltage(LIN,HIN)|VIN,TH+|2.2|-|-|V|
|Logic “0” input voltage(LIN,HIN)|VIN,TH-|-|-|0.8|V|
|RFEpositivegoingthreshold|VRFE+|-|-|2.5|V|
|RFE negativegoingthreshold|VRFE-|0.8|-|-|V|
|VDD/VBSsupply undervoltage, positive going<br>threshold|VDD,UV+,<br>VBS,UV+|8|8.9|9.8|V|
|VDD/VBSsupply undervoltage, negative going<br>threshold|VDD,UV-,<br>VBS,UV-|6.9|7.7|8.5|V|
|VDD/VBSsupply undervoltage lock-out<br>hysteresis|VDDUVH,<br>VBSUVH|-|1.2|-|V|
|Quiescent VBSsupplycurrent|IQBS|-|45|70|µA|
|Quiescent VDDsupplycurrent|IQCC|1.0|1.7|3.0|mA|
|Input bias current VIN=4V for LIN,HIN|IIN+|-|5|20|µA|
|Input bias current VIN=0V for LIN,HIN|IIN-|-|-|2|µA|
|Input bias current VIN= 4V for RFE|IIN,RFE+|-|0|1|µA|
|Input bias current VIN= 4V for ITRIP|ITRIP+|-|5|20|µA|
|ITRIP positivegoingthreshold|VIT,TH+|0.475|0.500|0.525|V|
|ITRIPnegativegoingthreshold|VIT,TH-|-|0.43|-|V|
|ITRIPinput hysteresis|VIT,HYS|-|0.07|-|V|
|Bootstrapresistance|RBS|-|200|-|Ω|
|RFE low on resistance|RRFE|-|50|100|Ω|



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## **7 Dynamic Parameters** 

## **7.1 Inverter** 

(VDD-COM) = (VB - VS) = 15 V.  TC = 25°C unless otherwise specified. 

**Table 10** 

|**Table 10**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Min.**|**Typ. **|**Max.**|**Units**|
|Input to output turn-on<br>propagation delay|TON|ID= 1A, V+ = 150V|-|0.6|-|µs|
|Turn-on rise time|TR||-|11|-|ns|
|Turn-on switchingtime|TC(on)||-|42|-|ns|
|Input to output turn-off<br>propagation delay|TOFF|ID= 1A, V+ = 150V|-|0.7|-|µs|
|Turn-off fall time|TF||-|106|-|ns|
|Turn-off switchingtime|TC(off)||-|96|-|ns|
|RFE low to six switch turn-off<br>propagation delay|TEN|VIN= 0 or VIN= 5V, VEN=<br>5V|-|0.44|-|µs|
|ITRIPto six switch turn-off<br>propagation delay|TITRIP||-|920|-|ns|
|Turn-on switchingenergy|EON|ID= 1A, V+ = 150V,<br>VDD= 15V, L = 9mH|-|12|-|µJ|
|Turn-off switchingenergy|EOFF||-|5|-||
|Diode reverse recoveryenergy|EREC||-|10|-||
|Diode reverse recoverytime|TRR||-|35|-|ns|
|Turn-on switchingenergy|EON|ID= 1A, V+ = 150V,<br>VDD= 15V, L = 9mH, TJ<br>= 150°C|-|24|-|µJ|
|Turn-off switchingenergy|EOFF||-|5|-||
|Diode reverse recoveryenergy|EREC||-|13|-||
|Diode reverse recoverytime|TRR||-|55|-|ns|



## **7.2 Control** 

(VDD-COM) = (VB - VS) = 15V.  TC = 25°C unless otherwise specified. 

**Table 11** 

|**Table 11**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Min.**|**Typ. **|**Max.**|**Units**|
|Input filter time(HIN,LIN,ITRIP)|TFIL,IN|VIN= 0 or VIN= 5V|-|300|-|ns|
|Input filter time(RFE)|TFIL,EN|VRFE= 0 or VRFE= 5V|-|500|-|ns|
|ITRIP to Fault propagation<br>delay|TFLT|VIN= 0 or VIN= 5V, VITRIP<br>= 5V|-|660|-|ns|
|Internal injected dead time|TDT,GD|VIN= 0 or VIN= 5V|-|300|-|ns|
|Matching propagation delay<br>time (on and off) for same<br>phase high-side and low-side|MT|External dead time ><br>1µs|-|-|50|ns|



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## **8 Thermistor Characteristics** 

## **Table 12** 

|**Table 12**||||||
|---|---|---|---|---|---|
|**Parameter**<br>**Symbol**<br>**Co**|**nditions**|**Min.**|**Typ. **|**Max.**|**Units**|
|Resistance<br>R25<br>TC|= 25°C,±5% tolerance|44.65|47|49.35|kΩ|
|Resistance<br>R125<br>TC|= 125°C|1.27|1.39|1.51|kΩ|
|B-constant<br>(25/100)<br>B<br>±1|% tolerance|-|4006|-|K|
|Temperature<br>Range||-20|-|150|°C|



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**----- Start of picture text -----**<br>
+3.3V<br>4.0<br>REXT<br>VTH<br>3.5<br>R<br>3.0<br>2.5<br>Rmin  Rtyp  Rmax<br>2.0 max TTH [ ℃ ]  [kΩ]  [kΩ]  [kΩ]<br>typ 50  15.448  16.432  17.436<br>min<br>1.5 60  10.483  11.194  11.924<br>70  7.245  7.765  8.302<br>1.0 80  5.092  5.477  5.876<br>90  3.648  3.937  4.237<br>100  2.653  2.872  3.101<br>0.5<br>110  1.957  2.125  2.301<br>120  1.462  1.592  1.729<br>0.0 125  1.269  1.384  1.505<br>0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150<br>Thermistor Temperature TTH (°C)<br> (V)<br>TH<br>Thermistor Pin Readout Voltage V<br>**----- End of picture text -----**<br>


**Figure 5 Thermistor resistance – temperature curve, for REXT=9.76kΩ, and thermistor resistance variation with temperature.** 

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## **9 Qualification Information** 

**Table 13** 

|**Table 13**|||
|---|---|---|
|**Moisture sensitivity level**|MSL3||
|**RoHS Compliant**|Yes||
|**ESD**|CDM|±2kV,Class C3, per ANSI/ESDA/JEDEC JS-002 standard|
||HBM|±2kV,Class 2, per ANSI/ESDA/JEDEC JESD22-A114F standard|



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## **10 Diagrams & Tables** 

## **10.1 Input-Output Logic Table** 

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**----- Start of picture text -----**<br>
V+<br>HIN Ho<br>Gate<br>Driver<br>U/V/W<br>IC<br>Lo<br>LIN<br>**----- End of picture text -----**<br>


**Figure 6 Module block diagram** 

**Table 14** 

|**Table 14**|||||
|---|---|---|---|---|
|**RFE**|**ITRIP**|**HIN**|**LIN**|**U,V,W **|
|1|0|1|0|V+|
|1|0|0|1|0|
|1|0|0|0|‡|
|1|0|1|1|‡|
|1|1|x|x|‡|
|0|x|x|x|‡|



‡ Voltage depends on direction of phase current 

## **10.2 Switching Time Definitions** 

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**----- Start of picture text -----**<br>
 HIN<br>2.1V<br>LIN<br>0.9V<br>trr<br>toff ton<br>10%<br>iD<br>90% 90 %<br>tf tr<br>10%<br>10% 10% 10%<br>v DS<br>tc(off) tc(on)<br>**----- End of picture text -----**<br>


**Figure 7 Switching times definition** 

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## **11 Application Guide** 

## **11.1 Typical Application Schematic** 

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**----- Start of picture text -----**<br>
IM111-X3Q1B<br>VBUS<br>VDD1 VB1 VDD2 VB2<br>XTAL0 PWMUL LIN1 HO LIN2 HO<br>PWMUH HIN1 HIN2<br>XTAL1 PWMWL RFE1<br>PWMWH RFE2<br>ShutdownFault/ +- VS1 U NTC VS2 V<br>uP Vtemp ITRIP1 ITRIP2<br>Power AIN1<br>Supply VDD IFB+ LO LO<br>IFB- COM1 COM2<br>VDDCAP IFBO<br>VSS<br>**----- End of picture text -----**<br>


**Figure 8 Application schematic** 

## **11.2 Performance Charts** 

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**----- Start of picture text -----**<br>
7<br>V+ = 170V, VDD=VBS=15V,<br>6 TJ≤150°C, MI=0.8, PF=0.8,<br>Bipolar SPWM, RTH(J-A)=12°C/W<br>5<br>FPWM=6kHz<br>4<br>FPWM=16kHz<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150<br>PCB Ambient Temperature [ ℃ ]<br>Max Motor Current [Arms]<br>**----- End of picture text -----**<br>


**Figure 9 Max current SOA** 

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## **11.3 –Vs Immunity** 

**Figure 10 –Vs immunity** 

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12 Package Outline<br>**----- End of picture text -----**<br>


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Dimensions in mm<br>**----- End of picture text -----**<br>


Final Datasheet 

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Note: Exposed tie bars on side of the module. T1 is internally connected to pin 37 T2 is internally connected to pin 15 T3 is internally connected to pin 12 T4 is internally connected to pin 31 T5 is internally connected to pin 5 

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## **Revision History** 

## **Major changes since the last revision** 

**Page or Reference Description of change** 

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## **Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2019-12-12** 

**Published by Infineon Technologies AG 81726 München, Germany** 

**© 2019 Infineon Technologies AG. All Rights Reserved.** 

**Do you have a question about this document? Email: erratum@infineon.com Document reference** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics  (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IM111X3Q1BAUMA1/intelligent-power-module-ipm-mosfet-250-v-12-a-15)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/im111x3q1bauma1/ipm-module-250v-12a-qfn/dp/3577328RL)
---

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